JPS62138846A - Optical information recording medium - Google Patents

Optical information recording medium

Info

Publication number
JPS62138846A
JPS62138846A JP60279933A JP27993385A JPS62138846A JP S62138846 A JPS62138846 A JP S62138846A JP 60279933 A JP60279933 A JP 60279933A JP 27993385 A JP27993385 A JP 27993385A JP S62138846 A JPS62138846 A JP S62138846A
Authority
JP
Japan
Prior art keywords
information recording
transfer complex
recording medium
maximum absorption
optical information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60279933A
Other languages
Japanese (ja)
Inventor
Harumasa Yamazaki
山崎 晴正
Yuichi Ueda
雄一 上田
Kenji Morikawa
森川 健治
Takashi Matsuse
松瀬 高志
Hiroshi Shibano
博史 柴野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Priority to JP60279933A priority Critical patent/JPS62138846A/en
Publication of JPS62138846A publication Critical patent/JPS62138846A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • G11B7/247Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes methine or polymethine dyes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

PURPOSE:To obtain an optical information recording medium having the superior stability for a long period by forming an information recording layer contg. a charge-transfer complex. CONSTITUTION:An information recording layer contg. a charge-transfer complex is formed. The maximum absorption wavelength of the charge-transfer complex is preferably within the range of 700-900nm. The fact that the maximum absorption wavelength of a charge-transfer complex shifts generally to the longer wavelength side of the maximum absorption wavelengths of an electron donative compound and an electron accepting compound used is known. Accordingly, when the maximum absorption wavelength of the charge-transfer complex is within the range of 700-900nm, the maximum absorption wavelength of a used charge donative compound is preferably within the range of 500-800nm.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はレーザ光によって情報を記録・再生することの
できる光学的情報記録媒体に関するものであり、更に詳
しくは、レーザ光の波長域に吸収を有する電荷移動錯体
を記録層として用いる光学的情報記録媒体に関するもの
である。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an optical information recording medium on which information can be recorded and reproduced using laser light. The present invention relates to an optical information recording medium using a charge transfer complex having the following as a recording layer.

〔従来の技術及びその問題点] 従来、基盤、高分子バインダ一層及び情報記録層を有す
る光学的情報記録媒体の情報記録層には、例えば、Te
合金、Te酸化物などの無機化合物或いは有機色素など
が用いられている。これらのうちで有機色素は、一般に
レーザ光に対して高感度であり、又、公害を引き起こす
可能性が小さく、安価であるために、種々の化合物が検
討され、情報記録層に適用することが試みられている。
[Prior Art and its Problems] Conventionally, the information recording layer of an optical information recording medium having a base, a polymer binder layer, and an information recording layer contains, for example, Te.
Alloys, inorganic compounds such as Te oxide, or organic dyes are used. Among these, organic dyes are generally highly sensitive to laser light, have a low possibility of causing pollution, and are inexpensive, so various compounds have been studied and are suitable for use in information recording layers. is being attempted.

例えば、これまでにフタロシアニン染料、シアニン色素
、メロシアニン色素、ナフトキノン色素などを情報記録
層として用いる試みが提案されている(特開昭55−9
7033号、特開昭58412790号、特開昭58−
83344号公報など)しかしながら、これらの有機色
素を用いた光学的情報記録媒体は、無機化合物を情報記
録層として用いた光学的情報記録媒体に較べて、情報記
録層の安定性に劣るという欠点を有している。例えば、
シアニン色素、アズレン誘導体などを情報記録層として
用いた光学的情報記録媒体は、レーザ光によって情報を
書き込んだ後にレーザ光による情報の読み出しを50回
程度繰り返すと、読み出しの精度が実用の範囲以下にな
ってしまい、実用的な情報記録媒体とは言い難いもので
ある。
For example, attempts to use phthalocyanine dyes, cyanine dyes, merocyanine dyes, naphthoquinone dyes, etc. as information recording layers have been proposed (Japanese Patent Laid-Open No. 55-9
No. 7033, JP 58412790, JP 58-
However, optical information recording media using these organic dyes have the disadvantage that the stability of the information recording layer is inferior to optical information recording media using inorganic compounds as the information recording layer. have. for example,
For optical information recording media that use cyanine dyes, azulene derivatives, etc. as the information recording layer, if information is written using laser light and then read out using laser light about 50 times, the readout accuracy may fall below the practical range. Therefore, it is difficult to call it a practical information recording medium.

このため情報記録層の安定性を改良すべく種々の検討が
なされているが、高感度で安定性の良い有機化合物系の
光学的情報記録媒体は未だ開発−されていない状況であ
る。
For this reason, various studies have been made to improve the stability of the information recording layer, but an organic compound-based optical information recording medium with high sensitivity and good stability has not yet been developed.

本発明の目的は、前述したような従来技術のもつ欠点を
改良して、長期安定性に優れた光学的情報記録媒体を提
供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to improve the drawbacks of the prior art as described above and to provide an optical information recording medium with excellent long-term stability.

〔問題点を解決するための手段〕[Means for solving problems]

本発明者らは、上記の問題点を解決するために鋭意検討
を行った結果、電子供与性の化合物と電子受容性の化合
物とからなる電荷移動錯体を情報記録層に用いた光学的
情報記録媒体が、レーザ光に高感度に応答し、しかも情
報の読み出しに関して長期にわたって安定性を示すこと
を見出し本発明に到った。
As a result of intensive studies to solve the above problems, the present inventors have discovered an optical information recording layer using a charge transfer complex consisting of an electron-donating compound and an electron-accepting compound in the information recording layer. The inventors have discovered that the medium responds to laser light with high sensitivity and exhibits long-term stability in reading information, leading to the present invention.

即ち、本発明は、基盤上に情報記録層を設けてなる光学
的情報記録媒体において、該情報記録層が電荷移動錯体
を含有することを特徴とする光学的情報記録媒体を提供
するものである。
That is, the present invention provides an optical information recording medium comprising an information recording layer provided on a substrate, wherein the information recording layer contains a charge transfer complex. .

本発明において用いる電荷移動錯体としては、最大吸収
波長が700〜900 nmの範囲にあるものが好まし
い。−最に、電荷移動錯体の最大吸収波長は、電子供与
性化合物及び電子受容性化合物のそれぞれ単独の最大吸
収波長より長波長側にシフトすることが知られているの
で、電荷移動錯体の最大吸収波長が700〜900 n
mの範囲内であるためには、電子供与性化合物の最大吸
収波長が5(10〜800 nmの範囲内にあることが
好ましい。
The charge transfer complex used in the present invention preferably has a maximum absorption wavelength in the range of 700 to 900 nm. -Finally, it is known that the maximum absorption wavelength of a charge transfer complex is shifted to a longer wavelength side than the maximum absorption wavelength of an electron donating compound and an electron accepting compound, so the maximum absorption wavelength of a charge transfer complex is Wavelength is 700-900n
In order to fall within the range of m, the maximum absorption wavelength of the electron donating compound is preferably within the range of 5 (10 to 800 nm).

本発明において好ましく用いられる、500〜800 
nmの範囲内に最大吸収波長を有する電子供与性化合物
としては例えば、次の(1)〜(3)で表される化合物
を挙げることができる。
500 to 800, preferably used in the present invention
Examples of the electron-donating compound having a maximum absorption wavelength within the nm range include compounds represented by the following (1) to (3).

化合物(1):フエナレン誘導体 但し、(I)、(II)、(III)におけるR0〜R
16は水素原子、ハロゲン原子又は1価の有機残基を表
し、R1〜R1++は同じ置換基又は異なった置換基で
あっても良い。nは0〜2を示す。
Compound (1): Phenalene derivative However, R0 to R in (I), (II), and (III)
16 represents a hydrogen atom, a halogen atom, or a monovalent organic residue, and R1 to R1++ may be the same substituent or different substituents. n represents 0 to 2.

化合物(2):チオピラン誘導体 但し、(TV)、(V)におけるR1〜RZ4は水素原
子、ハロゲン原子又は1価の有機残基を表し、R1−R
24は同じ置換基又は異なった置換基であっても良い。
Compound (2): Thiopyran derivative However, R1 to RZ4 in (TV) and (V) represent a hydrogen atom, a halogen atom, or a monovalent organic residue, and R1-R
24 may be the same substituent or different substituents.

nはO〜2を示す。n represents O~2.

化合物(3):ベンゾジチオール誘導体但し、(VI)
、(■)におけるR、−wReは水素原子、ハロゲン原
子又は1価の有機残基を表し、R1−R8は同じ置換基
又は異なった置換基であっても良い。nはO〜2を示す
Compound (3): benzodithiol derivative provided that (VI)
, (■) R and -wRe represent a hydrogen atom, a halogen atom, or a monovalent organic residue, and R1 to R8 may be the same substituent or different substituents. n represents O~2.

化合物(1)の具体的な例として、ビス(フェナレン−
1−イリデン)エタン、ビス(2−メチルフェナレン−
1−イリデン)エタン、ビス(5−メチルフェナレン−
1−イリデン)エタン、ビス(フェナレン−1−イリデ
ン)エタン、ビス(2,5−ジメチルフェナレン−1−
イリデン)エタン、ビス(5−フェニルフェナレン−1
−イリデン)エタン、ペンタレノ (L2,3−cd 
; 4,5.6−c’d’ )ジフェナレン、ペンタレ
ノ (1,2,3−cd ; 4,5.6−c’d’ 
) ジメチルフェナレン等を挙げることができる。
As a specific example of compound (1), bis(phenalene-
1-ylidene)ethane, bis(2-methylphenalene-
1-ylidene)ethane, bis(5-methylphenalene-
1-ylidene)ethane, bis(phenalene-1-ylidene)ethane, bis(2,5-dimethylphenalene-1-
ylidene) ethane, bis(5-phenylphenalene-1
-ylidene) ethane, pentaleno (L2,3-cd
; 4,5.6-c'd') diphenalene, pentaleno (1,2,3-cd; 4,5.6-c'd'
) Dimethylphenalene, etc. can be mentioned.

化合物(2)の具体的な例としては、1.2−ビス(4
H−チオピラン−4−イリデン)エタン、1.2−ビス
(2,6−ジフェニル−4H−チオピラン−4−イリデ
ン)エタン、1,2−ビス(3,5−ジメチル−2,6
−ジフェニル−4H−チオピラン−4−イリデン)エタ
ン、1゜2−ビス(チオダンテン−9−イリデン)エタ
ン、1.2−ビス(2,8−ジメチルチオサンテン−9
−イリデン)エタン等を挙げることができる。
A specific example of compound (2) is 1,2-bis(4
H-thiopyran-4-ylidene)ethane, 1,2-bis(2,6-diphenyl-4H-thiopyran-4-ylidene)ethane, 1,2-bis(3,5-dimethyl-2,6
-diphenyl-4H-thiopyran-4-ylidene)ethane, 1゜2-bis(thiodanthene-9-ylidene)ethane, 1,2-bis(2,8-dimethylthiosanthene-9)
-ylidene) ethane, etc.

化合物(3)の具体的な例としては、シクロヘキサ−2
,5−ジエン−1,4−ジイリデンビスー1,3−ベン
ゾジチオーレ、シクロヘキサ−2,5−ジエン−1,4
−ジイリデンビスー1,3−メチルヘンゾジチオーレ等
を挙げることができる。
Specific examples of compound (3) include cyclohexa-2
,5-diene-1,4-diylidene-1,3-benzodithiole, cyclohexa-2,5-diene-1,4
-diylidenebis-1,3-methylhenzodithiole and the like.

これらの(11〜(3)の化合物は、いずれも本発明に
おいて好ましく用いることができる。
All of these compounds (11 to (3)) can be preferably used in the present invention.

本発明において用いられる電子受容性化合物としては、
例えば、トリニトロベンゼンクロラニル、テトラシアノ
エチレン、テトラシアンキノジメタン、テトラクロロ無
水フタル酸、2,3−ジクロロ−5,6−ジシアノニル
−ベンゾキノン、トリニトロフルオレノン、テトラブロ
ム−p−ベンゾキノン、テトラクロロ−p−ベンゾキノ
ン、ジエチルテトラシアノキノジメタン、ジブロムテト
ラシアノキノジメタン等を挙げることができ、これらの
うちではトリニトロベンゼンクロラニル、テトラシアノ
エタン、テトラシアンキノジメタン、テトラクロロ無水
フタル酸、2,3−ジクロロ−5,6−ジシアノ −p
−ベンゾキノン、トリニトロフルオレノンが好ましいも
のである。
As the electron-accepting compound used in the present invention,
For example, trinitrobenzene chloranil, tetracyanoethylene, tetracyanoquinodimethane, tetrachlorophthalic anhydride, 2,3-dichloro-5,6-dicyanonyl-benzoquinone, trinitrofluorenone, tetrabromo-p-benzoquinone, tetrachloro-p -benzoquinone, diethyltetracyanoquinodimethane, dibromotetracyanoquinodimethane, etc.; among these, trinitrobenzenechloranil, tetracyanoethane, tetracyanoquinodimethane, tetrachlorophthalic anhydride, 2, 3-dichloro-5,6-dicyano-p
-benzoquinone and trinitrofluorenone are preferred.

上記の電子供与性化合物及び電子受容性化合物から電荷
移動錯体を形成させるについては、通常、電子供与性化
合物と電子受容性化合物とを適当な溶媒中で混合して製
造するが、その好ましい混合割合はモル比で、供与体/
受容体−5/1〜115の範囲である。
In order to form a charge transfer complex from the above-mentioned electron donating compound and electron accepting compound, the electron donating compound and the electron accepting compound are usually mixed in a suitable solvent, and the preferable mixing ratio is as follows. is the molar ratio, donor/
Receptor ranges from 5/1 to 115.

本発明で好ましく用いることができる、700〜900
 nmの範囲の最大吸収波長を有する電荷移動錯体は、
104程度以上のモル比吸光係数εを示し、これを光学
的情報記録媒体の記録層に使用することは非常に好まし
い。
700 to 900, which can be preferably used in the present invention
A charge transfer complex with a maximum absorption wavelength in the nm range is
It exhibits a molar specific absorption coefficient ε of about 104 or more, and it is very preferable to use it in the recording layer of an optical information recording medium.

上記の電荷移動錯体は、真空葎着法、スパッタリング法
、ドクターブレード法、キャスト法、スピナー法、浸漬
法などの一般的な薄膜形成法で成膜して基盤上に設置す
ることができるが、高分子樹脂バインダー中に電荷移動
錯体を分散させたものを基盤上に成膜せしめる方法が、
製法上及び情報記録層の安定性の面から好ましい。
The charge transfer complex described above can be formed and installed on a substrate by a general thin film forming method such as a vacuum deposition method, a sputtering method, a doctor blade method, a casting method, a spinner method, or a dipping method. A method in which a charge transfer complex is dispersed in a polymeric resin binder is deposited on a substrate.
This is preferable from the viewpoint of the manufacturing method and the stability of the information recording layer.

この際に使用することのできる高分子樹脂バインダーと
しては、例えば、ゼラチン、セルロース誘導体、デキス
トラン、ロジンなどの天然高分子化合物、ポリエチレン
、ポリプロピレン、ポリスチレン、ポリ (メタ)アク
リル酸エステル、ポリエステル、ポリウレタン、塩化ビ
ニル重合体などの熱可塑性樹脂を挙げることができる。
Examples of polymeric resin binders that can be used in this case include natural polymeric compounds such as gelatin, cellulose derivatives, dextran, and rosin, polyethylene, polypropylene, polystyrene, poly(meth)acrylate, polyester, polyurethane, Mention may be made of thermoplastic resins such as vinyl chloride polymers.

本発明に係る情報記録層中の電荷移動錯体と高分子樹脂
バインダーとの配合割合は重量比で80 : 20〜2
0 : 80が好ましく、更に好ましくは70 : 3
0〜30 : 70である。
The mixing ratio of the charge transfer complex and the polymer resin binder in the information recording layer according to the present invention is 80:20 to 2 by weight.
0:80 is preferable, more preferably 70:3
0-30:70.

又、基盤としては、例えば、ガラス、プラスチ・7りな
どを挙げることができ、代表的なプラスチックとして、
塩化ビニル樹脂、アクリル樹脂、エポキシ樹脂、ビニル
エステル樹脂、ポリカーボネイト樹脂、ポリオレフィン
樹脂などを例示することができる。
In addition, examples of the base include glass, plasti, etc. Typical plastics include:
Examples include vinyl chloride resin, acrylic resin, epoxy resin, vinyl ester resin, polycarbonate resin, and polyolefin resin.

基盤上に、高分子樹脂をバインダーとして電荷移動錯体
を塗布する際の膜厚は特に限定されないが、レーザ光に
対する感度などの点からして、0.1〜5fm、好まし
くは0.5〜2−の範囲である。
The film thickness when applying the charge transfer complex onto the substrate using a polymer resin as a binder is not particularly limited, but from the viewpoint of sensitivity to laser light, etc., it is 0.1 to 5 fm, preferably 0.5 to 2 fm. - is in the range.

又、更に、情報記録層の上に更に保護層を設けたり、基
盤と情報記録層の間に反射層を設けることもできる。保
護層を設ける場合には、レーザ光に対して透明であり、
機械的強度が大きく、記録層と反応しに<<、成膜性の
良い材料を用いるのが好ましく、例えば、無機化合物と
してはAlzOl 、Sin、、SiO、MgO、Zn
O、MgF、、CuFzなどが挙げられ、有機化合物と
しては、ポリスチレン、ポリエステル、ポリカーボネイ
ト、ポリキシレン、ポリ塩化ビニル、ポリアクリロニト
リル1.ポリアクリロニトリル、ポリ (メタ)アクリ
ル酸エステル、ポリ酢酸ビニル、ポリエチレン、ポリプ
ロピレン、ポリアミドなどの有機高分子化合物が挙げら
れる。
Furthermore, a protective layer may be further provided on the information recording layer, or a reflective layer may be provided between the base and the information recording layer. If a protective layer is provided, it should be transparent to laser light;
It is preferable to use a material that has high mechanical strength, reacts with the recording layer, and has good film-forming properties. Examples of inorganic compounds include AlzOl, Sin, SiO, MgO, and Zn.
Examples of organic compounds include polystyrene, polyester, polycarbonate, polyxylene, polyvinyl chloride, and polyacrylonitrile. Examples include organic polymer compounds such as polyacrylonitrile, poly(meth)acrylate, polyvinyl acetate, polyethylene, polypropylene, and polyamide.

反射層を設ける場合には、反射率の高い物質を用いるの
が好ましく、例えばAI、Ag、 Pb、 Cu。
When providing a reflective layer, it is preferable to use a substance with high reflectance, such as AI, Ag, Pb, or Cu.

Na、、 Crなどの金属薄膜を用いることができる。A metal thin film such as Na, Cr, etc. can be used.

〔実施例〕〔Example〕

以下に実施例を示して本発明を具体的に説明するが、本
発明はこれらの実施例のみに限定されるbのではない。
The present invention will be specifically explained below with reference to Examples, but the present invention is not limited only to these Examples.

実施例I J、Amer、Chem、Soc、、 104.143
2(1982) 、CheIII。
Example I J, Amer, Chem, Soc, 104.143
2 (1982), CheIII.

Le t ters 、 969 (1982)に記載
されている方法に従って合成したビス(フェナレン−1
−イリデン)エテノ(融点138℃、最大吸収波長72
0 nm、logε=3.86)とトリニトロフルオレ
ノンとをテトラヒドロフラン中でモル比1:2で混合し
て電荷移動錯体を形成せしめた。このものの最大吸収波
長は760開であり、logε=4.05であった。こ
の電荷移動錯体溶液にニトロセルロースを溶解させ50
%溶液とし、このものをポリエチレンテレフタレートフ
ィルム上に固形分が1.0 g/lriとなるように塗
布して、光学的情報記録媒体を得た。
Bis(phenalene-1) synthesized according to the method described in Letters, 969 (1982).
-ylidene) etheno (melting point 138℃, maximum absorption wavelength 72
0 nm, log ε = 3.86) and trinitrofluorenone in a 1:2 molar ratio in tetrahydrofuran to form a charge transfer complex. The maximum absorption wavelength of this material was 760 degrees, and logε=4.05. Dissolve nitrocellulose in this charge transfer complex solution and
% solution and coated on a polyethylene terephthalate film so that the solid content was 1.0 g/lri to obtain an optical information recording medium.

この記録媒体に薄膜面から半導体レーザ光(GaAs接
合レーザ)を2.0−のビーム径で照射面での照射パワ
ーを5m訂こして照射した。記録媒体を910 tri
 / s e cで移動させながら記録を行った結果、
記録感度は3nJ/ビツトであり、電子顕微鏡で観察し
た結果、極めて鮮明な溝が形成されていた。
This recording medium was irradiated with semiconductor laser light (GaAs bonded laser) from the thin film surface with a beam diameter of 2.0- and the irradiation power at the irradiation surface was reduced by 5 m. 910 tri recording medium
As a result of recording while moving with /sec,
The recording sensitivity was 3 nJ/bit, and as a result of observation with an electron microscope, extremely clear grooves were formed.

同一のレーザ光による記録後、読み出しを繰り返し行い
、記録層の安定性について評価したところ、本発明の光
学的情報記録媒体は50回の記録読み出しの繰り返しの
後も正常な記録読み出しを行うことができた。
After recording with the same laser beam, reading was repeated and the stability of the recording layer was evaluated, and it was found that the optical information recording medium of the present invention could perform normal recording and reading even after 50 repetitions of recording and reading. did it.

尚、記録層の安定性は、半導体レーザ(0,7M1lz
)を読み出し光とし、基盤を通して反射光を検出して、
スペクトラム・アナライザーにてバンド幅30に■2で
、C/N比(信号対雑音比)を測定することによって評
価した。
Note that the stability of the recording layer is determined by the semiconductor laser (0.7M1lz
) as the readout light and detect the reflected light through the board.
Evaluation was made by measuring the C/N ratio (signal-to-noise ratio) using a spectrum analyzer with a bandwidth of 30 and 2.

実施例2 J、Chem、 Soc、Chem、Comm、 、 
1143 (1981)に記載されている方法に従って
合成した1、2−ビス(2,6−ジフェニル−4H−チ
オピラン−4−イリデン)エテノ(融点211〜212
°C1最大吸収波長553 nm、log ε=4.9
9)と2.3−ジクロロ−5,6−ジシアツー叶ベンゾ
キノンとをトルエン中でモル比3:4で混合して電荷移
動錯体を形成せしめた。このものの最大吸収波長は80
6 nmであり、logε−4,09であった。この電
荷移動錯体溶液に酢酸セルロースを溶解せしめて50%
溶液とし、このものをガラス基盤上に固形分が1.0 
g/mとなるように塗布して、光学的情報記録媒体を得
た。
Example 2 J, Chem, Soc, Chem, Comm, ,
1,2-bis(2,6-diphenyl-4H-thiopyran-4-ylidene)etheno (melting point 211-212
°C1 maximum absorption wavelength 553 nm, log ε=4.9
9) and 2,3-dichloro-5,6-dicyazolebenzoquinone were mixed in toluene at a molar ratio of 3:4 to form a charge transfer complex. The maximum absorption wavelength of this substance is 80
6 nm and log ε-4.09. Dissolve cellulose acetate in this charge transfer complex solution to 50%
Make a solution and place this on a glass substrate with a solid content of 1.0.
An optical information recording medium was obtained by coating the film at a concentration of g/m.

以下、実施例1と同様にして半導体レーザで記録した。Thereafter, recording was performed using a semiconductor laser in the same manner as in Example 1.

記録感度は1nJ/ビツトであり、極めて鮮明な溝が形
成されていることが確認された。
The recording sensitivity was 1 nJ/bit, and it was confirmed that extremely clear grooves were formed.

実施例1と同様にレーザ光による情報の記録後、読み出
しを繰り返し行なったが、50回の記録読み出しの繰り
返しの後も正常に記録読み出しを牟桑り返すことができ
た。
As in Example 1, after information was recorded with a laser beam, reading was repeated, and even after repeating recording and reading 50 times, the recording and reading could be successfully repeated.

実施例3 J、Chem、Soc、Chem、Comm、 、 7
17 (1981)に記載されている方法に従って合成
した1、2−ビス(チオサンテン−9−イリデン)エテ
ノ(融点233°C1最大吸収波長550 nm、lo
gε−4,70)とテトラシアノキノジメタンとをメチ
ルエチルケトン中でモル比1:2で混合して電荷移動錯
体を形成せしめた。このものの最大吸収波長は790 
nmであり、logε=4.10であった。この電荷移
動錯体溶液に塩化ポリエチレンを溶解せしめて50%溶
液とし、このものをエポキシ樹脂基盤上に固形分が1.
0 g/n(となるように塗布して、光学的情報記録媒
体を得た。
Example 3 J, Chem, Soc, Chem, Comm, , 7
17 (1981), 1,2-bis(thiosanthen-9-ylidene)etheno (melting point 233 °C, maximum absorption wavelength 550 nm, lo
gε-4,70) and tetracyanoquinodimethane were mixed in a molar ratio of 1:2 in methyl ethyl ketone to form a charge transfer complex. The maximum absorption wavelength of this substance is 790
nm, and logε=4.10. Chlorinated polyethylene was dissolved in this charge transfer complex solution to make a 50% solution, and this solution was placed on an epoxy resin base with a solid content of 1.5%.
0 g/n (to obtain an optical information recording medium.

以下、実施例1と同様にして半導体レーザで記録した。Thereafter, recording was performed using a semiconductor laser in the same manner as in Example 1.

記録感度は1.8 nJ/ビットであり、極めて鮮明な
溝が形成されていることが確認された。
The recording sensitivity was 1.8 nJ/bit, and it was confirmed that extremely clear grooves were formed.

実施例1と同様にレーザ光による情報の記録後、読み出
しを繰り返し行なったが、50回の記録読み出しの繰り
返しの後も正常に記録読み出しを繰り返すことができた
As in Example 1, after information was recorded with a laser beam, reading was repeatedly performed, and even after repeating recording and reading 50 times, recording and reading could be repeated normally.

実施例4 J、Chem、Soc、Chem、Comm、 + 7
4 (1978)に記載されている方法に従って合成し
たシクロヘキサ−2,5−ジエン−1,4−ジイリデン
ビスー1.3−メチルベンゾジチオーレ(融点170〜
172°C以上、最大吸収波長580 nm、  lo
g t =4.83)と2,3−ジクロロ−5,6−ジ
シアツー叶ヘンゾキノンとをトルエン中でモル比1:2
で混合して電荷移動錯体を形成せしめた。このものの最
大吸収波長は762nmであり、logε−4,15で
あった。この電荷移動錯体溶液に酢酸セルロースを溶解
せしめて50%溶液とし、このものをガラス基盤上に固
形分が1,0g7mとなるように塗布して、光学的情報
記録媒体を得た。
Example 4 J, Chem, Soc, Chem, Comm, +7
4 (1978), cyclohexa-2,5-diene-1,4-diylidenebis-1,3-methylbenzodithiole (melting point 170~
172°C or higher, maximum absorption wavelength 580 nm, lo
g t =4.83) and 2,3-dichloro-5,6-dicya2-henzoquinone in a molar ratio of 1:2 in toluene.
to form a charge transfer complex. The maximum absorption wavelength of this material was 762 nm, which was log ε-4.15. Cellulose acetate was dissolved in this charge transfer complex solution to make a 50% solution, and this solution was coated on a glass substrate so that the solid content was 1.0 g and 7 m to obtain an optical information recording medium.

以下、実施例1と同様にして半導体レーザで記録した。Thereafter, recording was performed using a semiconductor laser in the same manner as in Example 1.

記録感度は1.2’nJ/ビツトであり、鮮明な溝が形
成されていることが確認された。
The recording sensitivity was 1.2'nJ/bit, and it was confirmed that clear grooves were formed.

実施例1と同様にレーザ光による情報の記録後、読み出
しを繰り返し行なったが、50回の記録読み出しの繰り
返しの後も正常に記録読み出しを繰り返すことができた
As in Example 1, after information was recorded with a laser beam, reading was repeatedly performed, and even after repeating recording and reading 50 times, recording and reading could be repeated normally.

実施例5 J、Amer、Chem、Soc、、  105.51
36(1983)  に記載されている方法に従って合
成した、ペンタレノ(1,2,3−cd ; 4,5.
6−c’d’ 〕ジフェナレン(融点155〜157°
C1最大吸収波長666 nm、  log e −5
、13)とテトラシアノエチレンとをテトラヒドロフラ
ン中でモル比l:2で混合して電荷移動錯体を形成せし
めた。このものの最大吸収波長は795 nn+であり
、logε=4.5であった。この電荷移動錯体溶液に
ニトロセルロースを溶解せしめて50%溶液とし、この
ものをビニルエステル樹脂基盤上に固形分がo、a g
/mとなるように塗布して、光学的情報記録媒体を得た
Example 5 J, Amer, Chem, Soc, 105.51
36 (1983), pentaleno (1,2,3-cd; 4,5.
6-c'd' ] Diphenalene (melting point 155-157°
C1 maximum absorption wavelength 666 nm, log e -5
, 13) and tetracyanoethylene were mixed in a molar ratio of 1:2 in tetrahydrofuran to form a charge transfer complex. The maximum absorption wavelength of this material was 795 nn+, and logε=4.5. Nitrocellulose was dissolved in this charge transfer complex solution to make a 50% solution, and this was deposited on a vinyl ester resin base with a solid content of o, a g.
/m to obtain an optical information recording medium.

以下、実施例1と同様にして半導体レーザで記録した。Thereafter, recording was performed using a semiconductor laser in the same manner as in Example 1.

記録感度は1.0 nJ/ビットであり、極めて鮮明な
溝が形成されていることが確認された。
The recording sensitivity was 1.0 nJ/bit, and it was confirmed that extremely clear grooves were formed.

実施例1と同様にレーザ光による情報の記録後、読み出
しを繰り返し行なったが、50回の記録読み出しの繰り
返しの後も正常に記録読み出しを繰り返すことができた
As in Example 1, after information was recorded with a laser beam, reading was repeatedly performed, and even after repeating recording and reading 50 times, recording and reading could be repeated normally.

実施例6 実施例5で用いたペンタレノ (1,2,3−cd ;
 4゜5、6−c’ d’ 〕ジフェナレンと2.3−
ジクロロ−5,6−ジシアツヘンゾキノンとをトルエン
中でモル比3:4で混合して電荷移動錯体を形成せしめ
た。
Example 6 Pentaleno (1,2,3-cd;
4゜5,6-c'd' ] diphenalene and 2.3-
Dichloro-5,6-dicyazhenzoquinone was mixed in toluene in a molar ratio of 3:4 to form a charge transfer complex.

このものの最大吸収波長は825 nmであり、log
ε=5.01であった。この電荷移動錯体溶液に酢酸セ
ルロースを溶解せしめて50%溶液とし、このものをガ
ラス基盤上に固形分が1.0g/mとなるように塗布し
て、光学的情報記録媒体を得た。
The maximum absorption wavelength of this substance is 825 nm, and log
ε=5.01. Cellulose acetate was dissolved in this charge transfer complex solution to make a 50% solution, and this solution was coated on a glass substrate so that the solid content was 1.0 g/m to obtain an optical information recording medium.

以下、実施例1と同様にして半導体レーザで記録した。Thereafter, recording was performed using a semiconductor laser in the same manner as in Example 1.

記録感度は1nJ/ビツトであり、極めて鮮明な溝が形
成されていることが確認された。
The recording sensitivity was 1 nJ/bit, and it was confirmed that extremely clear grooves were formed.

実施例1と同様にレーザ光による情報の記録後、読み出
しを繰り返し行なったが、50回の記録読み出しの繰り
返しの後も正常に記録読み出しを繰り返すことができた
As in Example 1, after information was recorded with a laser beam, reading was repeatedly performed, and even after repeating recording and reading 50 times, recording and reading could be repeated normally.

比較例1 特開昭58−83344号公報の実施例4に従って、1
.3−ビス〔3−エチルベンズチアゾニリイデン−(2
)−メチル〕−フェナレニウムテトラフルオロボレート
を合成した後、実施例1と同様にして光学的情報記録媒
体を得た。
Comparative Example 1 According to Example 4 of JP-A-58-83344, 1
.. 3-bis[3-ethylbenzthiazonylidene-(2
)-Methyl]-phenalenium tetrafluoroborate was synthesized, an optical information recording medium was obtained in the same manner as in Example 1.

以下、実施例1と同様の方法でこれに信号を記録した結
果、記録感度は1.6 nJ/ビットであり、極めて鮮
明な溝が形成されていることが確認された。
Thereafter, signals were recorded on this in the same manner as in Example 1, and as a result, the recording sensitivity was 1.6 nJ/bit, and it was confirmed that extremely clear grooves were formed.

実施例1と同様にレーザ光による情報の記録後、読み出
しの繰り返しを行い記録層の安定性について評価したと
ころ、50回の記録読み出しの繰り返しの後では読み出
し感度が著しく低下していた。
As in Example 1, after recording information with a laser beam, reading was repeated and the stability of the recording layer was evaluated. After 50 repetitions of recording and reading, the read sensitivity was significantly lowered.

〔発明の効果〕〔Effect of the invention〕

実施例においても具体的に示したように、本発明の光学
的情報記録媒体は、情報の記録に際して高感度を有して
おり、更には記録の読み出しに関しても長期的な安定性
を有している。即ち、本発明は、実用的レベルの光学的
情報記録媒体を提供するものであり、この分野に於ける
強い要望に応え得るものである。
As specifically shown in the examples, the optical information recording medium of the present invention has high sensitivity when recording information, and furthermore, has long-term stability when reading the recorded information. There is. That is, the present invention provides an optical information recording medium of a practical level, and can meet strong demands in this field.

Claims (1)

【特許請求の範囲】 1、基盤上に情報記録層を設けてなる光学的情報記録媒
体において、該情報記録層が電荷移動錯体を含有するこ
とを特徴とする光学的情報記録媒体。 2、情報記録層が、高分子樹脂バインダーに電荷移動錯
体を分散せしめた層である特許請求の範囲第1項記載の
光学的情報記録媒体。 3、電荷移動錯体が、700〜900nmの範囲に最大
吸収波長を有するものである特許請求の範囲第1項記載
の光学的情報記録媒体。 4、電荷移動錯体が、(a)500〜800nmの範囲
の最大吸収波長を有する電子供与性化合物と、(b)電
子受容性化合物とからなるものである特許請求の範囲第
1項記載の光学的情報記録媒体。 5、電子供与性化合物が、フェナレン誘導体、チオピラ
ン誘導体、ベンゾジチオール誘導体からなる群より選ば
れたものであり、電子受容性化合物が、トリニトロベン
ゼンクロラニル、テトラシアノエチレン、テトラシアン
キノジメタン、テトラクロロ無水フタル酸、2,3−ジ
クロロ−5,6−ジシアノ−p−ベンゾキノン、トリニ
トロフルオレノンからなる群より選ばれたものである特
許請求の範囲第4項記載の光学的情報記録媒体。
[Scope of Claims] 1. An optical information recording medium comprising an information recording layer provided on a substrate, wherein the information recording layer contains a charge transfer complex. 2. The optical information recording medium according to claim 1, wherein the information recording layer is a layer in which a charge transfer complex is dispersed in a polymeric resin binder. 3. The optical information recording medium according to claim 1, wherein the charge transfer complex has a maximum absorption wavelength in the range of 700 to 900 nm. 4. The optical system according to claim 1, wherein the charge transfer complex comprises (a) an electron-donating compound having a maximum absorption wavelength in the range of 500 to 800 nm, and (b) an electron-accepting compound. information recording medium. 5. The electron-donating compound is selected from the group consisting of phenalene derivatives, thiopyran derivatives, and benzodithiol derivatives, and the electron-accepting compound is trinitrobenzenechloranyl, tetracyanoethylene, tetracyanquinodimethane, and tetrachloro. The optical information recording medium according to claim 4, which is selected from the group consisting of phthalic anhydride, 2,3-dichloro-5,6-dicyano-p-benzoquinone, and trinitrofluorenone.
JP60279933A 1985-12-12 1985-12-12 Optical information recording medium Pending JPS62138846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60279933A JPS62138846A (en) 1985-12-12 1985-12-12 Optical information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60279933A JPS62138846A (en) 1985-12-12 1985-12-12 Optical information recording medium

Publications (1)

Publication Number Publication Date
JPS62138846A true JPS62138846A (en) 1987-06-22

Family

ID=17617935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60279933A Pending JPS62138846A (en) 1985-12-12 1985-12-12 Optical information recording medium

Country Status (1)

Country Link
JP (1) JPS62138846A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007077091A (en) * 2005-09-15 2007-03-29 Osaka Univ Two-photon absorbing material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007077091A (en) * 2005-09-15 2007-03-29 Osaka Univ Two-photon absorbing material

Similar Documents

Publication Publication Date Title
EP0232427B1 (en) Optical recording medium
US4798781A (en) Fabrication process of optical recording medium
EP0153736B1 (en) Optical recording element
US4814256A (en) Optical recording material
JPS60163245A (en) Optical information recording medium
EP0203826B1 (en) Optical recording medium and method of recording thereon
KR960010332B1 (en) Optical recording medium
JPH0791482B2 (en) Naphtolactam dye and optical recording medium containing the same
EP0896327A1 (en) Optical information recording medium and method of producing the same
US4908294A (en) Optical information recording medium
JPH0574159B2 (en)
JPS62138846A (en) Optical information recording medium
JP2605116B2 (en) Optical information recording medium
EP0131032B1 (en) Recording medium for optical data storage
JPS60254037A (en) Optical information recording medium
JPS62207686A (en) Optical information-recording medium
JP2849725B2 (en) Optical information recording medium
JPS6299192A (en) Optical information recording medium
JPS62201289A (en) Light information recording medium
JP2697770B2 (en) Optical recording and reproduction method
JPS60252345A (en) Optical information recording medium
JPS62233288A (en) Optical information recording medium
JP2740851B2 (en) Optical information recording medium
JP2585459B2 (en) Optical information recording medium
JPH0729490B2 (en) Optical information recording medium