JPS6213619B2 - - Google Patents
Info
- Publication number
- JPS6213619B2 JPS6213619B2 JP13841978A JP13841978A JPS6213619B2 JP S6213619 B2 JPS6213619 B2 JP S6213619B2 JP 13841978 A JP13841978 A JP 13841978A JP 13841978 A JP13841978 A JP 13841978A JP S6213619 B2 JPS6213619 B2 JP S6213619B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- oxide film
- charge trapping
- measuring
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 230000005484 gravity Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000005865 ionizing radiation Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13841978A JPS5565146A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13841978A JPS5565146A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5565146A JPS5565146A (en) | 1980-05-16 |
JPS6213619B2 true JPS6213619B2 (enrdf_load_stackoverflow) | 1987-03-27 |
Family
ID=15221516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13841978A Granted JPS5565146A (en) | 1978-11-11 | 1978-11-11 | Characteristic measuring method for charge trap center in insulator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565146A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023228338A1 (ja) * | 2022-05-25 | 2023-11-30 | 株式会社日立ハイテク | 荷電粒子線装置、計測方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102213693B (zh) * | 2011-04-08 | 2012-10-10 | 北京大学 | 无衬底引出半导体器件的栅介质层陷阱密度的测试方法 |
CN104198570B (zh) * | 2014-09-10 | 2016-08-17 | 国家电网公司 | 反向偏压下测量短路电流衰减计算陷阱参数的装置和方法 |
-
1978
- 1978-11-11 JP JP13841978A patent/JPS5565146A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023228338A1 (ja) * | 2022-05-25 | 2023-11-30 | 株式会社日立ハイテク | 荷電粒子線装置、計測方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5565146A (en) | 1980-05-16 |
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