JPS62131455U - - Google Patents

Info

Publication number
JPS62131455U
JPS62131455U JP1850386U JP1850386U JPS62131455U JP S62131455 U JPS62131455 U JP S62131455U JP 1850386 U JP1850386 U JP 1850386U JP 1850386 U JP1850386 U JP 1850386U JP S62131455 U JPS62131455 U JP S62131455U
Authority
JP
Japan
Prior art keywords
diffusion layer
semiconductor substrate
conductivity type
variable capacitance
diode device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1850386U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0710499Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986018503U priority Critical patent/JPH0710499Y2/ja
Publication of JPS62131455U publication Critical patent/JPS62131455U/ja
Application granted granted Critical
Publication of JPH0710499Y2 publication Critical patent/JPH0710499Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
JP1986018503U 1986-02-12 1986-02-12 可変容量ダイオ−ド装置 Expired - Lifetime JPH0710499Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986018503U JPH0710499Y2 (ja) 1986-02-12 1986-02-12 可変容量ダイオ−ド装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986018503U JPH0710499Y2 (ja) 1986-02-12 1986-02-12 可変容量ダイオ−ド装置

Publications (2)

Publication Number Publication Date
JPS62131455U true JPS62131455U (US07534539-20090519-C00280.png) 1987-08-19
JPH0710499Y2 JPH0710499Y2 (ja) 1995-03-08

Family

ID=30812230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986018503U Expired - Lifetime JPH0710499Y2 (ja) 1986-02-12 1986-02-12 可変容量ダイオ−ド装置

Country Status (1)

Country Link
JP (1) JPH0710499Y2 (US07534539-20090519-C00280.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390970B2 (en) 1997-11-26 2016-07-12 Applied Materials, Inc. Method for depositing a diffusion barrier layer and a metal conductive layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136964U (US07534539-20090519-C00280.png) * 1978-03-16 1979-09-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136964U (US07534539-20090519-C00280.png) * 1978-03-16 1979-09-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390970B2 (en) 1997-11-26 2016-07-12 Applied Materials, Inc. Method for depositing a diffusion barrier layer and a metal conductive layer

Also Published As

Publication number Publication date
JPH0710499Y2 (ja) 1995-03-08

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