JPS62124785A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS62124785A JPS62124785A JP60264529A JP26452985A JPS62124785A JP S62124785 A JPS62124785 A JP S62124785A JP 60264529 A JP60264529 A JP 60264529A JP 26452985 A JP26452985 A JP 26452985A JP S62124785 A JPS62124785 A JP S62124785A
- Authority
- JP
- Japan
- Prior art keywords
- film
- laser beam
- laser
- total
- reflecting mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はレーザ装置、とくに高品質レーザビームの取
出しの高効率化及び！ ミラーの熱変形防止に関するも
のである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a laser device, particularly to increasing the efficiency of extracting a high-quality laser beam and! This invention relates to preventing thermal deformation of mirrors.
第３図（ａ）（ｂ）は各々例えば特願昭５１１−６９５
３２号明細書に示された従来のレーザ装置を示す断面構
成図９及び出射レーザビームの動径方向に対する強度分
布を示す分布図でるり９図においてｔ（１）は部分反射
ミラー、α２はミラー（１１表面に形成された薄膜で９
部分反射膜である。（２）は全反射ミラー。Figures 3(a) and 3(b) are, for example, Japanese Patent Application No. 511-695.
In the cross-sectional configuration diagram 9 showing the conventional laser device shown in the specification of No. 32 and the distribution diagram showing the intensity distribution in the radial direction of the emitted laser beam, t(1) is a partial reflection mirror, and α2 is a mirror. (The thin film formed on the surface of 9
It is a partially reflective film. (2) is a total reflection mirror.
（３）はレーザ媒質で＋ＣＯ２レーザを例にとれば放電
により励起されたガスであり・ＹＡＧレーザを例にとれ
ばフラッシュラングにエリ励起されたガラスなどである
。（４）はミラー（山（２）からなる光共振器内に発生
したレーザビームＩ偽りは外部に取出された一出射レー
ザビームであり、 ＋５１ｆｌ出射レーザビーム卿の動
径方向の強度分布曲線である。（６１はレーザビーム吸
収体からなるアパーチャで、中央部に開口を有する。(3) is a laser medium, which is a gas excited by electric discharge in the case of a +CO2 laser, and glass excited by a flash run in the case of a YAG laser. (4) is a laser beam generated in an optical resonator consisting of a mirror (mountain (2)), which is a single emitted laser beam taken out to the outside, and is an intensity distribution curve in the radial direction of the +51fl emitted laser beam. (61 is an aperture made of a laser beam absorber and has an opening in the center.
次に動作について説明する。部分反射ミラー（１１と全
反射ミラー（２）とからなる光共振器間を往復するレー
ザビームｈ、レーザ媒質＋３１に：エリ増幅されレーザ
ビーム（４）となる。Next, the operation will be explained. A laser beam h that travels back and forth between an optical resonator consisting of a partial reflection mirror (11) and a total reflection mirror (2) is amplified by a laser medium +31 and becomes a laser beam (4).
７ バー ？ヤ（６）ノ外周表面に達するレーザビーム
は吸収される几めレーザビーム（４）ハ外形を規定さＡ
、その横モード（レーザビームの動径方向の強度分布）
をガウス形（正規分布型）に制限される。7 bar? The laser beam that reaches the outer circumferential surface of Y (6) is absorbed.
, its transverse mode (radial intensity distribution of the laser beam)
is restricted to Gaussian shape (normal distribution type).
ミラー（１１０表面には薄膜α２が形成され、レーザビ
ーム（４）のうち一部を出射レーザビーム０υとり、て
外部にとり出す。第３図（ｂ）に示す曲線（５）はとり
出されたレーザビームの強度分布の断面形状全示す。A thin film α2 is formed on the surface of the mirror (110), and a part of the laser beam (4) is taken out as an emitted laser beam 0υ and taken out to the outside. The entire cross-sectional shape of the laser beam intensity distribution is shown.
ガウス形レーザビームは集光性能がよく、良品質のレー
ザビームとされ、市販のレーザ装置の大部分にガウス形
レーザビームを発生する。Gaussian laser beams have good focusing performance and are considered to be high quality laser beams, and most commercially available laser devices generate Gaussian laser beams.
アパーチャ（６）の効果について説明を加える。レーザ
ビームモードのうち外形のもつとも小さいものがガウス
形であるため、ガウス形のレーザビームがぎりぎり通る
径のアパーチャ（６）を光共振器内に挿入すれば、ガウ
ス形以外のレーザビームは光共振器間を往復する間にア
パーチャ（６）に：りはし切りされ、はし切りされたレ
ーザビームはアバ−チャに吸収され大きく減衰し、結果
ガウス形のレーザビームのみが形成される。An explanation will be added regarding the effect of the aperture (6). Among the laser beam modes, the one with the smallest external shape is Gaussian, so if an aperture (6) with a diameter that allows a Gaussian laser beam to pass through is inserted into the optical resonator, laser beams other than Gaussian will be optically resonant. While reciprocating between the devices, the laser beam is cut into an aperture (6), and the cut laser beam is absorbed by the aperture and greatly attenuated, resulting in only a Gaussian laser beam being formed.
実験結果によれば上でのべたぎりぎりのアパーチャ径（
即ち開口径）φａｉ＋ ガウス形レーザビームの＠変分
部が中央の強度の１／ｅ ＶＣなる点の半径ωとφａ
＝ （３，２〜３．４）Ｘωの関係があることが知られ
ている。According to the experimental results, the aperture diameter (
That is, the aperture diameter) φai+ The radius ω and φa of the point where the variable part of the Gaussian laser beam is 1/e VC of the central intensity
It is known that there is a relationship of = (3,2-3.4)Xω.
し発明が解決しようとする問題点ｊ
従来のレーザ装置は以上の１９に、アパーチャを挿入し
てレーザビームの外形を規制し、ガウス形レーザビーム
を１尋ていた。さてレーザの発振効率を考えると、Ｖ−
ザビームとレーザ媒質とが同一の大きさをもっている時
が最高となる。即ちアパーチャを用いない時が最高とな
る。しかし。Problems to be Solved by the Invention J In the conventional laser device, an aperture is inserted in the above 19 to regulate the outer shape of the laser beam, resulting in a Gaussian laser beam. Now, considering the laser oscillation efficiency, V-
It is best when the beam and the laser medium have the same size. In other words, it is best when no aperture is used. but.
Ｃ０２レーザにもちいられる放電にエリ励起されたガス
状レーザ媒質、ＹＡＧレーザにもちいられるフラッシュ
ランプにエリ励起されたガラス状レーザ媒質をはじめと
してツー股にレーザ媒質は不均質性をふくむため・従来
例の工うにレーザビームにくらべ大きめの励起空間をつ
くり良質な部分をアパーチャによりレーザビームの大き
さを制限して均一なレーザビームをとり出すのが普通で
あった。そのためレーザの発振効率はおのずと制限され
ていた。Conventional examples include the gaseous laser medium excited by a discharge used in a C02 laser, and the glassy laser medium excited by a flash lamp used in a YAG laser. The conventional method was to create an excitation space larger than the laser beam, and then limit the size of the laser beam using an aperture in a high-quality area to extract a uniform laser beam. Therefore, the oscillation efficiency of lasers has naturally been limited.
また部分反射ミラー（１）はレーザビーム（４１ｅ 何
％か吸収するが、レーザビームが中心にパワー１）５９
４中し、でいるためν吸収されたレーザビームにより部
分反射ミラー（１）の中心が強く加熱され熱分布を生じ
、熱変形するという問題があった。In addition, the partially reflecting mirror (1) absorbs the laser beam (41e to a certain extent, but the laser beam has a power of 1 in the center) 59
4, the center of the partially reflecting mirror (1) is strongly heated by the ν-absorbed laser beam, resulting in a thermal distribution and thermal deformation.
この発明は上記のような問題点を解消するためになされ
たもので良質のレーザビームが高い発振効率をたちちつ
つ得られ！かつ部分反射ミラーの熱変形を防ぐことがで
きるレーザ装置を得るＣとを目的とする。This invention was made to solve the above-mentioned problems, and it is possible to quickly obtain a high-quality laser beam with high oscillation efficiency! Another object of the present invention is to obtain a laser device that can prevent thermal deformation of a partially reflecting mirror.
この発明に係るレーザｆｉｔは９部分反射ミラーの、全
反射ミラーと対向する面上に２表面が全反射面となるリ
ング状の金属の薄膜を設けたものである。The laser fit according to the present invention is a nine-partial reflection mirror in which a ring-shaped metal thin film is provided on the surface facing the total reflection mirror, with two surfaces serving as total reflection surfaces.
〔作用）
この発明におけるリング状の金属の薄膜は全反射ミラー
と光共振器を構成し、レーザビームの発振に寄与すると
共に−レーザビームを吸収し部分反射ミラー全体を加熱
して、ミラーに熱分布を生じにくくする。[Function] The ring-shaped metal thin film in this invention constitutes a total reflection mirror and an optical resonator, and not only contributes to the oscillation of the laser beam, but also absorbs the laser beam and heats the entire partially reflection mirror, thereby imparting heat to the mirror. Make distribution less likely to occur.
〔実施例Ｊ
以下會この発明の一実施例を図について説明する。第１
図（ａ） ｆｂ）は各々この発明の一実施例によるレー
ザ装置を示す断面構成図及び出射レーザビームの動径方
向に対する強度分布を示す分布図である。図においてり
第３囚と同一符号のものは同−又は相当部分を示す。[Embodiment J] An embodiment of the present invention will be described below with reference to the drawings. 1st
Figures (a) and (fb) are a cross-sectional configuration diagram showing a laser device according to an embodiment of the present invention, and a distribution diagram showing the intensity distribution of the emitted laser beam in the radial direction. In the figure, the same reference numerals as the third prisoner indicate the same or corresponding parts.
（６１）は部分反射ミラー（１）に設けられている部分
反射膜α２のう全反射ミラー（２）と対向する面上に設
けられ９表面が全反射面となるリング状の金属の薄膜で
、全反射ミラー（２）と上記全反射面とが共振状態とな
るように配置されている。金属の薄膜（６１）は例えば
クラスタイオンビームを用いて金を少なくとも５０１以
上の厚みで形成したものである。(61) is a ring-shaped metal thin film provided on the surface of the partial reflection film α2 provided on the partial reflection mirror (1) that faces the total reflection mirror (2), and the surface 9 becomes the total reflection surface. , the total reflection mirror (2) and the total reflection surface are arranged so as to be in a resonant state. The metal thin film (61) is made of gold formed using, for example, a cluster ion beam to a thickness of at least 50 mm or more.
次に動作について説明する。部分反射ミラー［１１と全
反射ミラー（２）との間を往復するレーザビームはレー
ザ媒質（３）にエリ増幅され−リング状の金属薄膜（６
１）により外形を制限されｔガウス形レーザビームとし
て外部に取出される。Next, the operation will be explained. The laser beam that travels back and forth between the partial reflection mirror [11 and the total reflection mirror (2) is amplified by the laser medium (3) and is emitted by the ring-shaped metal thin film (6).
1), the external shape is limited and the laser beam is extracted to the outside as a Gaussian laser beam.
薄膜（６１）にエリはし切りされたレーザビームは。The laser beam is cut into the thin film (61).
薄膜（６１）により反射され、全反射ミラー（２）との
間を往復する間にその一部が再びレーザビーム（４υと
して取出される。It is reflected by the thin film (61), and a part of it is taken out again as a laser beam (4υ) while traveling back and forth between the total reflection mirror (2) and the total reflection mirror (2).
第２図は、この発明の一実施例によるレーザ装置の発振
特性を従来のものと比較して示す特性図であり、Ｃ０２
レーザを用い、第１因に示す構成のレーザ装置（直線Ａ
）ｌ第３図に示す構成（従来例）のレーザ装置（直線Ｂ
）ｌ及び第４図に示す構成（従来例）のレーザ装置（直
、ｖｊｉｃ）における発掘特性である。なお、第４ Ｓ
（ａｌ （ｂ）は各々従来のレーザ装置を示す断面構
成図及び出射レーザビームの動径方向に対する強度分布
を示す分布図であり、アパーチャ（６）がない場合を示
している、第２図においてν横軸は放電電力、縦軸はレ
ーザ出力を示す。各別には得られたレーザビーム強度分
布も並記した。また、各別におけるレーザ媒質（３）は
放電にエリ励起された直径１７ｍｘのガス媒質であり−
そのガス組成比は０２；Ｈ２：Ｈｅ＝８：４（１）５２
である。また用いるアパーチャ（６）又は薄膜（６
１）の開口径は１２真翼である。FIG. 2 is a characteristic diagram showing the oscillation characteristics of a laser device according to an embodiment of the present invention in comparison with a conventional one.
A laser device using a laser and having the configuration shown in the first factor (straight line A
) l Laser device with the configuration (conventional example) shown in Fig. 3 (straight line B
)1 and the excavation characteristics of the laser device (direct, vjic) having the configuration (conventional example) shown in FIG. In addition, the 4th S
(al (b) is a cross-sectional configuration diagram showing a conventional laser device and a distribution diagram showing the intensity distribution in the radial direction of the emitted laser beam, respectively, and shows the case without the aperture (6). νThe horizontal axis shows the discharge power, and the vertical axis shows the laser output.The obtained laser beam intensity distribution is also shown in each case.In addition, the laser medium (3) in each case is a 17 mx diameter laser medium excited by the discharge. It is a gas medium.
The gas composition ratio is 02; H2:He=8:4(1)52
It is. Also used is the aperture (6) or thin film (6).
The opening diameter of 1) is 12 blades.
第２図からν従来例では良質のガウス形レーザビームを
得るためにアパーチャを挿入すると発振効率が著しく悪
くなることがわかる。−万、この発明によるものは曾高
い発振効率をたもったまま。From FIG. 2, it can be seen that in the ν conventional example, when an aperture is inserted to obtain a high-quality Gaussian laser beam, the oscillation efficiency deteriorates significantly. - The device according to this invention maintains extremely high oscillation efficiency.
ガウス形レーザビームに近いものが得られている。A beam close to a Gaussian laser beam was obtained.
また部分反射ミラーｆｉ＋の熱変形について考えると・
リング状の金属薄膜（６１）は数％（Ｃ０２レーザビ
ームを例にとれば１％程度）のレーザビームを吸収する
が、レーザビームが部分反射ミラー（１）の中央部を透
過することによっても数チレーザビームが吸収されるた
め２部分反射ミラー（１）全体が加熱され、熱分布が生
じにくいという効果がある。Also, considering the thermal deformation of the partially reflective mirror fi+...
The ring-shaped thin metal film (61) absorbs several percent of the laser beam (approximately 1% in the case of a C02 laser beam), but the laser beam also absorbs light when it passes through the center of the partially reflecting mirror (1). Since several laser beams are absorbed, the entire two-part reflection mirror (1) is heated, which has the effect of making it difficult for heat distribution to occur.
なおり上記実施例では金属の薄膜（６１）ｔ”部分反射
膜α２の上に形成したが、直接１部分反射ミラー（１１
上に形成してもよい。また２部分反射ミラー（１）を基
盤となる材料の透過率でそのまま適用する場合は部分反
射膜（Ｉｚが不要になることはいうまでもない。In the above embodiment, the metal thin film (61) was formed on the t'' partial reflection film α2, but it was formed directly on the partial reflection mirror (11).
It may be formed on top. Furthermore, it goes without saying that when the two-partial reflection mirror (1) is applied as is with the transmittance of the base material, the partial reflection film (Iz) is not required.
以上のようにこの発明によれば２部分反射ミラーの全反
射ミラーと対向する面上に１表面が全反射面となるリン
グ状の金属の薄膜を設けたので。As described above, according to the present invention, a ring-shaped metal thin film, one surface of which is a total reflection surface, is provided on the surface of the two-part reflection mirror that faces the total reflection mirror.
良品質のレーザビームがアパーチャを挿入する前と同等
の高い発振効率で得られると共に９部分反射ミラーの熱
変形を防ぐことができる効果がある。A high-quality laser beam can be obtained with high oscillation efficiency equivalent to that before inserting the aperture, and thermal deformation of the nine partial reflection mirrors can be prevented.
第１図（ａｌ（ｂ）は各々この発明の一実施例によるレ
ーザ装置を示す断面構成図及び出射レーザビームの動径
方向の強度分布を示す分布図、第２図はこの発明の一実
施例によるレーザ装置の発振特性を従来のものと比較し
て示す特性図を並びに第３図第４図（ａ）＋ （ｂ）は
各々従来のレーザ装置を示す断面構成図及び出射レーザ
ビームの動径方向の強度分布を示す分布図である。
（１）・・・部分反射ミラー１（２）・・・全反射ミラ
ー、 （６ｉ）・・・薄膜。
なお２図中シ同−符号は同−又は相当部分を示す。FIG. 1 (al and b) is a cross-sectional configuration diagram showing a laser device according to an embodiment of the present invention and a distribution diagram showing the intensity distribution of the emitted laser beam in the radial direction, and FIG. 2 is an embodiment of the present invention. Fig. 3 and Fig. 4 (a) + (b) are cross-sectional diagrams showing the oscillation characteristics of the conventional laser device and the radius vector of the emitted laser beam, respectively. It is a distribution diagram showing the intensity distribution in the direction. (1)... Partial reflection mirror 1 (2)... Total reflection mirror, (6i)... Thin film. Note that the same symbols in the two figures are the same. or a corresponding portion.
Claims (2)
器を用いたレーザ装置において、上記部分反射ミラーの
、上記全反射ミラーと対向する面上に、表面が全反射面
となるリング状の金属の薄膜を設けたことを特徴とする
レーザ装置。(1) In a laser device using an optical resonator consisting of a total reflection mirror and a partial reflection mirror, a ring-shaped surface whose surface is a total reflection surface is provided on the surface of the partial reflection mirror that faces the total reflection mirror. A laser device characterized by being provided with a thin metal film.
された特許請求の範囲第１項記載のレーザ装置。(2) The laser device according to claim 1, wherein the metal thin film is formed using a cluster ion beam.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264529A JPS62124785A (en) | 1985-11-25 | 1985-11-25 | Laser device |
| DE19863639580 DE3639580A1 (en) | 1985-11-20 | 1986-11-20 | LASER ARRANGEMENT |
| US07/377,774 US4942588A (en) | 1985-11-20 | 1989-07-10 | Laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60264529A JPS62124785A (en) | 1985-11-25 | 1985-11-25 | Laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62124785A true JPS62124785A (en) | 1987-06-06 |
Family
ID=17404522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60264529A Pending JPS62124785A (en) | 1985-11-20 | 1985-11-25 | Laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62124785A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256075A (en) * | 1989-05-31 | 1993-10-26 | The Furukawa Electric Co., Ltd. | Connector device |
-
1985
- 1985-11-25 JP JP60264529A patent/JPS62124785A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256075A (en) * | 1989-05-31 | 1993-10-26 | The Furukawa Electric Co., Ltd. | Connector device |
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