JPS62123067A - Manufacture of silicon carbide base honeycomb structure - Google Patents

Manufacture of silicon carbide base honeycomb structure

Info

Publication number
JPS62123067A
JPS62123067A JP60261443A JP26144385A JPS62123067A JP S62123067 A JPS62123067 A JP S62123067A JP 60261443 A JP60261443 A JP 60261443A JP 26144385 A JP26144385 A JP 26144385A JP S62123067 A JPS62123067 A JP S62123067A
Authority
JP
Japan
Prior art keywords
silicon
silicon carbide
honeycomb
honeycomb structure
molded body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60261443A
Other languages
Japanese (ja)
Inventor
康彦 遠藤
克義 鈴木
沼田 秀二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP60261443A priority Critical patent/JPS62123067A/en
Publication of JPS62123067A publication Critical patent/JPS62123067A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 「技術分野」 本発明は、例えば熱交換器、加熱炉等の1耐熱性を要求
される分野で利用される炭化珪素質ハニカム構造体の製
造法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for manufacturing a silicon carbide honeycomb structure used in fields where heat resistance is required, such as heat exchangers and heating furnaces.

「従来技術およびその問題点」 従来、この種のハニカム構造体の製造法としては、4.
¥開閉49−16711号−に示されたものがある。こ
の製造法は、有機質の薄11り材料を積層して所望の形
状寸法のハニカム状に成形し、これを中性または還元性
の雰囲気炉内で炭素化するまで焼成した後、さらに同様
の雰囲気のドで珪素ガス雰囲気中で1600℃ないし2
400℃の高温で加熱して、この炭素質構造体を珪素と
反応させる、いわゆる反応焼結法によって炭化珪素化さ
せてハニカム状の炭化珪素質構造体を得るというもので
ある。
"Prior art and its problems" Conventionally, as a manufacturing method of this type of honeycomb structure, 4.
There is one shown in ¥ Open and Close No. 49-16711-. This manufacturing method involves laminating thin layers of organic material to form a honeycomb shape of desired shape and size, firing this in a neutral or reducing atmosphere furnace until carbonized, and then heating it in a similar atmosphere. 1600℃ to 2℃ in a silicon gas atmosphere
The carbonaceous structure is heated at a high temperature of 400° C. and reacted with silicon to form silicon carbide by a so-called reaction sintering method to obtain a honeycomb-shaped silicon carbide structure.

また特開昭60−58847号には、炭素を含有する偏
重1シートおよび炭素を含有する波板シートを屯ね合せ
て〃いに結合硬化し、ついでコークス化し、ついで溶融
珪素浴に侵してなる炭化珪素質ハニカム構造体の製造法
が示されている。
Furthermore, in JP-A No. 60-58847, a carbon-containing unbalanced sheet and a carbon-containing corrugated sheet are combined together and hardened, then coked, and then immersed in a molten silicon bath. A method of manufacturing a silicon carbide honeycomb structure is shown.

しかしながら、1−記製造υ、では、ハニカム状成形体
がその通気路の向きを特定しないでicにカス雰囲気中
に置かれたり溶融珪素浴に浸されたりして反応焼結され
た場合、その古き方によっては焼怠−1117に成形体
の1部が自毛で曲ったり、傾いて菱形などにゆがんだり
、また、通気路として中空であるべき部分に珪素分など
が残留し、中空部が狭くなったり閉塞したりするととも
に珪素コ;(のロスも大きいといった問題点が生じてい
る。
However, in 1-Production υ, if the honeycomb shaped body is placed in an IC dust atmosphere or immersed in a molten silicon bath and subjected to reaction sintering without specifying the direction of its ventilation passages, Depending on the old method, part of the molded product may be bent due to its own hair or distorted into a rhombus shape due to its own hair, or silicon content may remain in the part that should be hollow as a ventilation passage, causing the hollow part to become distorted. Problems such as narrowing and blockage and large loss of silicon have arisen.

r発シ1の目的」 未発明の目的は、炭素源を含有するハニカム成形体を溶
融珪素もしくは珪素蒸気に接触させてなる炭化珪素質ハ
ニカム構造体の製造法において、珪素化焼成時の歪みを
抑え、さらには残留珪素による中空部の閉塞傾向を防止
して、熱伝導率および耐熱性の高いハニカム構造体を得
ることのできる炭化珪素質ハニカム構造体の製造法を提
供することにある。
The object of the invention is to reduce distortion during siliconization firing in a method for manufacturing a silicon carbide honeycomb structure in which a honeycomb formed body containing a carbon source is brought into contact with molten silicon or silicon vapor. It is an object of the present invention to provide a method for manufacturing a silicon carbide honeycomb structure, which can suppress the tendency of hollow portions to be blocked by residual silicon and obtain a honeycomb structure with high thermal conductivity and heat resistance.

r発明の概要」 本発明は、炭素源を含有するハニカ1、成形体を溶融珪
素もしくは珪素蒸気に接触させてなる炭化珪素質ハニカ
ム構造体の製造V、において、前記ハニカム成形体をそ
の通気−が1−ド力向になるようにして前記溶融珪素も
しくは珪素然気に接触させることを4¥徴とする。
``Summary of the Invention'' The present invention relates to the production of a honeycomb structure containing a carbon source 1 and a silicon carbide honeycomb structure by bringing the formed body into contact with molten silicon or silicon vapor. 4. The molten silicon or silicon gas is brought into contact with the molten silicon or silicon gas in such a manner that the molten silicon is oriented in the direction of the 1-degree force.

この方法によれば、炭素源を含有するハニカム成形体を
、溶融珪素もしくは珪素蒸気に接触させることにより、
反応焼結させてハニカム成形体を炭化珪素化させる。そ
の際1通気路を、最も圧縮強度の大きいにf力向とする
ことでハニカム成形体の歪みは最小となり、かつ余分な
珪素はlニド方向とされた通気路壁を伝ってFノ」に滴
下、流ドするので、ハニカム成形体を構成する薄板の接
合部分や谷部に余分な珪素は溜らず1 したがって、珪
素のロスを最小限に押えることができ1通気路の狭小化
、閉塞傾向も防IL=できる。このようにして得られた
ハニカム構造体は、熱伝導率が高く、高温I6#熱性を
有し、熱交換器や加熱炉などの分野において利用価値の
高いものである。
According to this method, by bringing a honeycomb formed body containing a carbon source into contact with molten silicon or silicon vapor,
The honeycomb formed body is converted into silicon carbide by reaction sintering. At this time, the distortion of the honeycomb molded body is minimized by setting the first air passage in the f force direction, which has the highest compressive strength, and the excess silicon flows through the air passage wall, which is set in the l nide direction, to the F force direction. Since it drips and flows, excess silicon does not accumulate in the joints and valleys of the thin plates that make up the honeycomb molded body.1 Therefore, silicon loss can be minimized, and the air passages tend to become narrower and clogged. Defense IL = possible. The honeycomb structure thus obtained has high thermal conductivity and high temperature I6# thermal properties, and has high utility value in fields such as heat exchangers and heating furnaces.

本発明でいラハニカム成形体に含有される)M素X(は
炭素であることが好ましいが、4i jj!J、炭!化
合物、無aIR素化合物あるいはこれらと炭素との混合
物であってもよい。また得られるハニカム構造体は主と
して炭化珪素からなるが、これと金属珪素およびまたは
炭素分が併存するものであってもよい。
The M element X (contained in the lahoneycomb molded body of the present invention) is preferably carbon, but may be a 4i jj! J, carbon! compound, a non-aIR element compound, or a mixture of these and carbon. Although the obtained honeycomb structure mainly consists of silicon carbide, it may also contain metal silicon and/or carbon.

「発明の実施例」 以ドに、本発明を実施例によってさらに詳細に説明する
"Embodiments of the Invention" The present invention will now be described in more detail with reference to Examples.

(実施例1) 第1図に示すように、フェノール樹脂などの熱硬化性で
残炭率の大きい有機バインダーを含浸したPAN系の炭
素繊維シートをサインカーブ断面を有する波板11およ
び平板12に所定ζゴー法で成形し硬化する。このよう
な波板11と平板12を所定枚散文〃に積層して接合し
、ハニカム成形体を得る。
(Example 1) As shown in FIG. 1, a PAN-based carbon fiber sheet impregnated with a thermosetting organic binder with a large residual carbon content such as phenol resin is formed into a corrugated plate 11 and a flat plate 12 having a sine curve cross section. It is molded and cured using a prescribed ζ go method. Such corrugated plates 11 and flat plates 12 are laminated and bonded in a predetermined manner to obtain a honeycomb molded body.

接合には例えば炭化珪素粉末とフェノール樹脂を混ぜた
ペーストが使用できる。
For example, a paste containing a mixture of silicon carbide powder and phenol resin can be used for bonding.

また、あらかじめ波板11および平板12に所要の挿通
孔を設けておき、得られたハニカム。成形体に波板11
および平板12をいずれも貫通するように本または二本
以にのパイプを挿通してなるハニカム成形体であっても
よい。この場合、パイプと積層体とは必要に応じて同様
のペーストで接合してもよい。使用するパイプとしては
未焼成または焼成済みの反応焼、I、I、炭化珪素賀の
パイプなとが望ましい。
Further, a honeycomb obtained by providing required insertion holes in the corrugated plate 11 and the flat plate 12 in advance. Corrugated plate 11 on the molded body
Alternatively, a honeycomb formed body may be formed by inserting a book or two or more pipes so as to pass through the flat plate 12. In this case, the pipe and the laminate may be joined using the same paste as necessary. The pipe to be used is preferably an unfired or fired reaction-fired, I, I, or silicon carbide pipe.

また、ハニカム成形体は、第2図に示すように’IK 
zE粉末と炭化珪素粉末の混合物にメチルセルロースと
フェノール樹脂などの有機パインターヲ混練したものを
押出成形することによって得られるものでもよい。
In addition, the honeycomb molded body is made of 'IK' as shown in FIG.
It may also be obtained by extrusion molding a mixture of zE powder and silicon carbide powder, kneaded with methylcellulose and organic paint such as phenol resin.

これらのハニカム成形体にあっては、形成された通気路
13はすべて相互に平行に走行してなっている。得られ
たハニカム成形体を非酸化性雰囲気中で所定温度で仮焼
すると、有機バインダーが熱分解されて多孔質化し、一
部は炭素化する。
In these honeycomb molded bodies, all of the formed air passages 13 run parallel to each other. When the obtained honeycomb molded body is calcined at a predetermined temperature in a non-oxidizing atmosphere, the organic binder is thermally decomposed and becomes porous, and a portion thereof is carbonized.

次に、このようなハニカム成形体を、図に示すように通
気路13が1:F方向に向くようにして、そのF部の・
部を1500〜IB00℃に加熱された溶融金属珪素と
接触させる。この場合、ハニカ1、成形体のF部を直接
に溶融金属珪素浴に浸i1t してもよいが、好ましく
は、多孔質の炭化珪素製の支41と台のしにハニカム成
形体を載置し、この支+1の下部を溶融金属fll温浴
浸漬する。
Next, as shown in the figure, such a honeycomb molded body is made so that the ventilation passages 13 face in the 1:F direction, and the
The part is brought into contact with molten metal silicon heated to 1500-IB00°C. In this case, the honeycomb 1 and the F part of the molded body may be directly immersed in the molten metal silicon bath, but preferably the honeycomb molded body is placed on supports 41 made of porous silicon carbide and a stand. Then, the lower part of this support +1 is immersed in a molten metal bath.

金属珪素は、多孔質の支ヰ1やハニカム成形体の中をL
肩11)1現象によりylっていき炭素分を珪素化する
と同11′、、に多孔質のハニカム成形体の仝休に含浸
される。珪素は冷却して液相から固相にかわる■j1に
体積が1膨張するので固化に際して余った金属珪素は構
造体の表面から浸み出してくるが、通気路が上下方向に
なっているので波板11とW板12との接合部分あるい
は交差壁14に滞留することなく通気路13内壁を伝わ
って下方に流れる。
Metallic silicon is inserted into the porous support 1 or the honeycomb molded body.
When the carbon content is silicided by the phenomenon 11)1, it is impregnated into the rest of the porous honeycomb molded body at 11'. When silicon cools, it changes from a liquid phase to a solid phase.The volume expands by 1 in 1 time, so the excess metal silicon oozes out from the surface of the structure during solidification, but since the air passages are in the vertical direction, It flows downward along the inner wall of the ventilation passage 13 without being retained at the joint between the corrugated plate 11 and the W plate 12 or at the cross wall 14.

ハニカム構造体の下部に滞留する溶融珪素、は台1−に
空間を設けたり、台に穴をあけ流ドする通路を設けてお
くことにより滴下減少せしめることができるほか、得ら
れたノ\ニカム構造体を反応焼結炉から取り出した後、
下部閉塞部を切断して除くこともできる。こうして溶融
金属珪素と接触することにより、ハニカム成形体の)シ
、モ分のほとんどは反応して炭化珪素に変化する。また
ペーストをつけた接合部分も金属珪素により充填されて
、炭素分が炭化珪素に変化し1強固に固着される。こう
して所望の炭化珪素化した、かつ、気孔部には金属1素
が充填されたハニカム構造体がほとんど歪みな(得られ
る。
The molten silicon that stays at the bottom of the honeycomb structure can be reduced by creating a space in the base 1- or by making a hole in the base and providing a passage for it to flow. After removing the structure from the reaction sintering furnace,
The lower occlusion can also be removed by cutting. By contacting the molten metal silicon in this way, most of the carbon and mole components of the honeycomb formed body react and change into silicon carbide. Further, the joint portions to which the paste is applied are also filled with metal silicon, and the carbon content is changed to silicon carbide, which is firmly fixed. In this way, a honeycomb structure having the desired silicon carbide structure and whose pores are filled with one metal element is obtained with almost no distortion.

(実施例2) ′実施例1と同様にして得られた炭素化したl\ニ力L
、成形体を、同じく通気路13をトド方向に向くように
して、1700〜2400℃の珪素蒸気雰囲気中に置く
。これにより、焼成時の歪みもほとんどなくハニカム成
形体のIN 部分の多くは反応焼結され、この後溶融珪
素中に浸漬することにより実施例1と同様な所望の炭化
珪素化したハニカム構造体が得られる。
(Example 2) 'Carbonized L\NiL obtained in the same manner as Example 1
Similarly, the molded body is placed in a silicon vapor atmosphere at 1700 to 2400° C. with the air passage 13 facing toward the sea. As a result, most of the IN part of the honeycomb molded body is reacted and sintered with almost no distortion during firing, and after that, by immersing it in molten silicon, a desired silicon carbide honeycomb structure similar to that of Example 1 is obtained. can get.

「発明の効果」 以I−説明したように、本発明の方法によれば。"Effect of the invention" According to the method of the present invention, as described below.

jR素源を含有するハニカム成形体をその通気路が[−
ド方向に向くようにして溶融珪素あるいは珪素蒸気雰囲
気に接触させ、珪素をハニカム成形体の炭、)9分の多
くと反応焼結させるようにしたので、得られるハニカム
構造体にゆがみがほとんどなく、また積層による場合の
接合部分あるいは押出成形による場合の交差壁に固化時
の浸出珪素の余分な滞留がなくなり、珪素ロスを最小限
に押えることができ1通気路中空部の狭小化を防ぐこと
ができる。また、成形体のほとんどの炭素分が炭化珪素
化し、さらには気孔も珪素で充填されて、熱伝導率が高
く耐熱性にすぐれた/\ニカム構造体を得ることができ
る。
The honeycomb molded body containing the jR element source is
The honeycomb structure is brought into contact with molten silicon or a silicon vapor atmosphere with the honeycomb structure facing in the direction, and the silicon is reacted and sintered with most of the charcoal of the honeycomb formed body, so there is almost no distortion in the resulting honeycomb structure. In addition, there is no excess retention of leached silicon during solidification in the joints when laminated or on the cross walls when extruded, minimizing silicon loss and preventing narrowing of the hollow part of the air passage. I can do it. In addition, most of the carbon content in the molded body is converted to silicon carbide, and the pores are also filled with silicon, making it possible to obtain a nicomb structure with high thermal conductivity and excellent heat resistance.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の製造法に適用される/Sニカム成形体
の一8様を示す斜視図、第2図は本発明製造法に適用さ
れる/\ニカム成形体の別の態様を示す斜視図である。 11・・・波板、12・・・モ板、13・・・通気路 
】4・・・交差壁転 誓 一丁羞売有11正書(方式) %式% 2、発明の名称 炭化珪素質ハニカム構造体の製造法 3、補正をする名 ・1ν件との関係  特許出願人 住 所  東京都千代m区丸の内二丁111番2弓名称
 (004)旭硝f株式会社 6、補正により増加する発明の数   なし7、補正の
対象 図面 8、補正の内容
Fig. 1 is a perspective view showing one embodiment of the /S nicum molded product applied to the manufacturing method of the present invention, and Fig. 2 shows another embodiment of the /S nicum molded product applied to the manufacturing method of the present invention. FIG. 11... Corrugated plate, 12... Mo board, 13... Ventilation path
】4...Cross wall subtraction 1-cho sale available 11 Official book (method) % formula % 2. Name of the invention Method for manufacturing a silicon carbide honeycomb structure 3. Name to be amended 1. Relationship with the patent Applicant address: 2-111-2 Marunouchi, Chiyoma-ku, Tokyo Name (004) Asahi Glass Co., Ltd. 6 Number of inventions to be increased by amendment None 7 Drawings subject to amendment 8 Contents of amendment

Claims (1)

【特許請求の範囲】[Claims]  炭素源を含有するハニカム成形体を溶融珪素もしくは
珪素蒸気に接触させてなる炭化珪素質ハニカム構造体の
製造法において、前記ハニカム成形体をその通気路が上
下方向になるようにして前記溶融珪素もしくは珪素蒸気
に接触させることを特徴とする炭化珪素質ハニカム構造
体の製造法。
In a method for producing a silicon carbide honeycomb structure in which a honeycomb formed body containing a carbon source is brought into contact with molten silicon or silicon vapor, the honeycomb formed body is placed in such a way that its ventilation passages are in the vertical direction, and the molten silicon or A method for producing a silicon carbide honeycomb structure, which comprises bringing it into contact with silicon vapor.
JP60261443A 1985-11-22 1985-11-22 Manufacture of silicon carbide base honeycomb structure Pending JPS62123067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60261443A JPS62123067A (en) 1985-11-22 1985-11-22 Manufacture of silicon carbide base honeycomb structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60261443A JPS62123067A (en) 1985-11-22 1985-11-22 Manufacture of silicon carbide base honeycomb structure

Publications (1)

Publication Number Publication Date
JPS62123067A true JPS62123067A (en) 1987-06-04

Family

ID=17361963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60261443A Pending JPS62123067A (en) 1985-11-22 1985-11-22 Manufacture of silicon carbide base honeycomb structure

Country Status (1)

Country Link
JP (1) JPS62123067A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004011388A1 (en) * 2002-07-26 2004-02-05 National Institute Of Advanced Industrial Science And Technology Silicon carbide thermostable porous structural material and process for producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004011388A1 (en) * 2002-07-26 2004-02-05 National Institute Of Advanced Industrial Science And Technology Silicon carbide thermostable porous structural material and process for producing the same

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