JPS62120041U - - Google Patents
Info
- Publication number
- JPS62120041U JPS62120041U JP656586U JP656586U JPS62120041U JP S62120041 U JPS62120041 U JP S62120041U JP 656586 U JP656586 U JP 656586U JP 656586 U JP656586 U JP 656586U JP S62120041 U JPS62120041 U JP S62120041U
- Authority
- JP
- Japan
- Prior art keywords
- drive unit
- mirror
- worm
- gear
- mirror housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 101150071927 AANAT gene Proteins 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Rear-View Mirror Devices That Are Mounted On The Exterior Of The Vehicle (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP656586U JPS62120041U (en, 2012) | 1986-01-22 | 1986-01-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP656586U JPS62120041U (en, 2012) | 1986-01-22 | 1986-01-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62120041U true JPS62120041U (en, 2012) | 1987-07-30 |
Family
ID=30789200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP656586U Pending JPS62120041U (en, 2012) | 1986-01-22 | 1986-01-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62120041U (en, 2012) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
| US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
| US7291545B2 (en) | 2000-08-11 | 2007-11-06 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage |
| US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US7393765B2 (en) | 2002-06-05 | 2008-07-01 | Applied Materials, Inc. | Low temperature CVD process with selected stress of the CVD layer on CMOS devices |
-
1986
- 1986-01-22 JP JP656586U patent/JPS62120041U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US7291545B2 (en) | 2000-08-11 | 2007-11-06 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage |
| US7393765B2 (en) | 2002-06-05 | 2008-07-01 | Applied Materials, Inc. | Low temperature CVD process with selected stress of the CVD layer on CMOS devices |
| US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
| US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |