JPS62117248A - Ion implantation system - Google Patents

Abstract

PURPOSE:To enable an ion implantation system to be operated at the optimum value in a short time by adjusting the present first, second and third integral values to be approximately the first, second and third integral values for the optimum control condition. CONSTITUTION:An arithmetic unit 35 has an integrating means which calculates the first integral value of the initial rise part of a beam current waveform corresponding to the wafer, the second integral value of the control fall part of the above waveform and of the rise part of the next waveform and the third integral value of the back fall part on the basis of the beam current measured by a measuring device 32. The first, second and third integral values for the work condition during the operation of the ion implantation device under the optimum control condition are stored in a memory. During the rise of the ion implantation device, the first, second and third integral values for the optimum control condition under a work condition similar to the work condition of rising the ion implantation device are read out from the memory and the calculated present first, second and third integral values are adjusted to be approximately the first, second and third integral values for the optimum control condition in order to optimize the waveform of the beam current.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an ion implantation system, and in particular, to an ion implantation system.
The present invention relates to an ion implantation system having an automatic start-up function that improves precision during start-up and shortens start-up time.

[Prior art] An ion implantation device that accelerates impurity ions generated in an ion source using a high electric field and implants them into a semiconductor substrate.
For example, there is an ion implantation device having a hot cathode type ion source, typically a Freeman type. This is widely used as an ion 1-person device for semi-nine-body shading devices because it generates ions in a stable state and is easy to maintain.

Fig. 5(a) shows an example of such a conventional Freeman-type ion 1-person device, and Fig. 5(l)
is an explanatory diagram of the ion source.

1 is an ion source (ion source), and positive ions are extracted from the ion source 1 with a constant energy by an extraction electrode 2 as a pre-stage acceleration part for ion extraction.
? Quality as Ht1 analysis department! It is conventionally analyzed by U analyzer 3. Then, the desired ions completely separated by the slit 4 are accelerated to the final energy by the acceleration tube 5.

Next, the ion beam is transmitted through a quadrupole lens 6 as a lens system.
The beam is converged to have a convergence point on the substrate surface 12, and J'I; controlled by the deflection electrode 9,
Mask 10 as a target part. faraday cup 1
1 to the substrate 12.

Here, the Faraday cup 11 is provided to detect whether the ion beam is controlled according to the 11 standards, and includes a corner Faraday cup, a fixed Faraday cup, a variable Faraday cup, etc.
When primary ions collide with the end plate and wall of the Faraday cup 11, secondary electrons and secondary f ions are generated, and by measuring these, the beam current is measured. In order to improve this accuracy, a mask IO is provided in front of the Faraday cup 11 to limit the incident angle of the -.order ions to a constant value. These act as detectors, and the ion beam currents detected by these detectors are displayed on the oscilloscope 7 and used as reference data when the operator makes adjustments.

By the way, the dose that controls the doping concentration is defined as follows.

Here, 1 is beam/U current [μA], t is time [s],
A is the scanning area [cIT11 pieces].

On the other hand, as shown in Fig. 5(b), the ions are ionized in the ion source chamber 22, which has been evacuated by 1°L and has reached a level of r [severe] of about lXl0-7 torr, and is placed there. The ion beam is extracted as an ion beam in a direction perpendicular to the rod-shaped filament 21.

In addition, 20 is an ion source housing, and 23.2
3 is an electromagnet, 24 is a ground electrode, 25 is a slit, 26 is a gas introduction ITI, and 27 is an ion beam.

Now, as for the usual setup and setting value changes of such an ion implanter, the Bellator observes the waveform of the oscilloscope and adjusts the values to the appropriate values. This is done by first performing a scan in the X and Y directions to find the minimum value of the beam current, storing this value, and approximating it to that data during actual operation. It will be done.

[Problem to be Solved] Generally, the minimum value of the beam current is determined by moving the beam little by little to obtain a quadratic curve, and then finding the value at the minimum point. However, such a method has the problem that there is no guarantee that the beam spacing will be as unique as when performing beam spacing during actual operation, and that an accuracy of l·min can not be ensured.

In addition, this approximation operation to find the minimum value of the beam current requires the operation of a skilled operator, and since this operation is so-called oven loop control, if there are any changes in the conditions of the equipment, cannot be determined, and there is no guarantee that it is set to the optimal value.
That's a problem.

In addition, every time the Ion 11 device is turned on and off or the set values are changed, the operator must observe the waveform on the oscilloscope and make adjustments to the appropriate value, which takes a long time. Currently, it takes approximately 10 minutes to open the bottle, making it difficult to control variations and accuracy.

[1-1 of the invention] This invention solves the problems of the prior art described in [1f], and also performs automatic \'/, l-geing of the 11-person ion equipment, which had conventionally been manually adjusted. It is an object of the present invention to provide an ion system that can reduce the number of adjustments and reduce the variation in ridges and improve its accuracy.

[Means for Solving the Problems] The first stage of the ion implantation system of the present invention to achieve the above objective 1 includes a storage device, a measuring means for measuring the beam current in the target portion, and arithmetic processing. a device;
The arithmetic processing unit calculates a first integral value of the first rl, -L, edge portion of the beam current waveform corresponding to the wafer based on the current value obtained from the measuring means. and the falling part in the center and the next waveform\7. It has an integral value means for calculating the second integral value of the l-shaped portion and the third integral value of the rear rising portion, and is optimal when operating the ion 11-person device. The first, second and third integral values in the control state are stored in the storage device in accordance with the working conditions at that time, and the iono-t
-1E When the machine is q-1-ejected, )'f', - is the first in the optimal control state under similar working conditions to those when ejected. The second and third integral values are read out from the storage device, and the second and third integral values are calculated by the first stage of integral value calculation. The waveform of the beam current is controlled so as to be close to or at the second and third integral values, so that the waveform of the beam current becomes optimal.

[Operations] By configuring in this way, it becomes easy to make fine adjustments to the optimum value, and it is possible to operate at the optimum value in a short time. Judgment function is greatly improved.

Furthermore, it is possible to eliminate the non-uniformity of the dose characteristics and improve the yield.
− can be achieved.

As a result, work efficiency can be improved.

[Embodiments] Examples of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a block diagram of an ion implantation system to which the present invention is applied, and FIG. 2 shows that the input γ1 is d5 of the process.
FIG. 3 is an explanatory diagram of a search table necessary for the processing, and FIG. 4 is an explanatory diagram of &JJ/ll11 waveform.

As shown in FIG. 1, this ion implantation system 100 includes an ion implanter 30, an automatic/γ1 control device 31, a control data measurement circuit 32. ,! :I/O control circuit 33
The ion 1-person device 30 is a device corresponding to FIG. 5(a), and in FIG. 1, the internal configuration is shown as a small block.

Here, the 11-person ion device 30 includes an ion source 41, an ion extraction front-stage acceleration section 42, and these ion sources 4.
1 and an ion source control unit 43 that controls the ion extraction pre-stage acceleration unit/12, and controls the selection of specified gas, gas flow m control, filament current, source magnet current, arc current, etc. According to section 43,
selected or controlled, the quality of the ion beam of a predetermined jit]I
1 is sent to the analysis section 44. Then, this ion beam is controlled by the analyzer magnet and the controller 45, so that only two ions are deflected by 90 degrees and extracted.

Next, the selected ions out of the ion beam are not sent to the post-acceleration stage 46, but are accelerated under the control of the energy control section 47, for example, at about 10 kV to 200 kV, and are then accelerated through the lens. In the system 48, the lens control unit 4
The focus is controlled by the control at 9, and the beam enters the beam deflection section 50. In the beam deflection section 50, the beam is scanned in the X direction and Y direction by the X-Y scan offset and alignment section 51, and the I) C offset and G voltages are adjusted to remove the neutralized beam. It will be done.

By the way, the X-Y scanning of the beam and the removal of the neutralized beam 2 depend on the ion species and beam energy.

Since it is affected by the beam current value, etc., the set value is selected to be appropriate and centering is performed with respect to the wafer in the target portion. In addition, the X and Y scan voltages are adjusted to prevent excessive overscanning.

The ion beam controlled in this way is irradiated onto the target section 52, but the target control section 53 that controls the target section 52 converts the current value measured by the main Faraday into X or Y. The onroscope observed waveforms as shown in FIG. 4 are displayed on the display 36 of the control unit 31 through the processing unit 35 of the control unit 31.

Note that the target system 011 section 53 includes a main Faraday control section 53a and an end stage bin control ffi<53b that controls the end station for switching the sample of sea urchin/\.

In addition, the dose processor 54 increases the ion beam current hitting the wafer by a total of 11 tll L, continues ion implantation until a preset dose of 1 is reached (normally, a value that ends at about 10 times). When the integral value of the beam current reaches the target dose, the wafers are switched via the end station control section 35b.

The lu control data measurement circuit 32 is connected to the ion source control unit 4
3. Analyzer magnet control section 45, beam energy control section 47, lens control RB49, X-Y scan offset control section 51, main Faraday side control RH53a
Then, the end station control unit 53b detects or measures the current control value, and outputs each detected value or measurement (+
+'( is sent via the input/output control circuit 31 to the arithmetic processing unit 35 of the automatic \γ1.gage control unit 31.

Here, the detected values or measured values include filament current value, arc current value, source magnet current value, analyzer current value, lens adjustment value, and XY scan as shown in column 62 of control data table 60 shown in FIG. These include a voltage value, an offset value (OFFSET value), a beam current value (maximum value), and determination values A, B, and C for the IIJ side waveform.

In the automatic \γ raising control device 31, a human output control circuit 33 is connected to an arithmetic processing unit 35 via a lotus 34, and this arithmetic processing unit 35 has an ion source control unit 43, an analyzer magnet control ffl<45, Beam energy control section 47, lens control section 49, X-Y scan offset, control column section 51, main Faraday 1111 column section 53
a1 and the end station control unit 531) to obtain each control (a'I) corresponding to the current operating state from the input/output control circuit 33 via the control data measurement circuit 32. 1 of 30 [heavy chain, open/close status of each opening/closing door, etc. to confirm the airtight status (i:j ``J' + other ion tl' device 30
Various status information regarding the ion implantation device 30 is obtained from the ion implantation device 30 via the human output control circuit 33. The optimal control values are then sent to each of the aforementioned control sections of the ion implantation device 30 via the human output control circuit 33.

The input/output control circuit 33 includes a 1]/A conversion/relay switching control circuit, etc., and the A/I) conversion circuit converts control analog data such as voltage values and current values obtained from each control unit into digital values. and then transferred to the arithmetic processing unit 35. Similarly, the D/A conversion circuit includes three processing units 35 and 35.
It converts the digital control value sent from the side into an analog value and sends it to each control section.

Further, the relay switching circuit is for sending a control signal for selectively switching the ion species to the ion source control unit 43 based on a command from the arithmetic processing unit 35.

Now, the arithmetic processing unit 35 of the automatic \r11 control device 31
The system is equipped with a microprocessor and a memory, and is realized by each program stored in the memory, and consists of the following one stage. That is, the arithmetic processing device 3
5 is a control value judgment-1 stage 35a and a control value output 1 stage 35.
b, control data search means 35c, observation data generation means 35d, operating state monitoring r stage 35e, trial optimum control data storage means 35f, and working condition calculation and determination means 35g.
, optimal waveform control means 35h, and beam current integral value calculation means 35i.

Then, the observation data generating means 35d synthesizes observation display data based on the detection data obtained from the target control unit 53, sends it to the display 36, and performs control to graphically display the observed waveform n shown by the dotted line in FIG. At the same time, the control data retrieval means 35c searches for a disk (hardware I) as an external storage device according to the work name entered manually from the keyboard 37
) K) 38 and search the column 61 of the control data table 60 (see FIG. 4) and search the pin name (work name) to see if there is a match. If there is an identical work name, use the flag in column 62 to determine whether it has been tried before or not, and if it has been tried before, the created name corresponds to the work name. Take out the control data table 60 and perform Act 3? The data is read into the memory of the processing unit 35.

Next, the work conditions in column 63 and various control values in column 64 are obtained, and the ion source control section 43, analyzer magnet control section 45, beam energy control section 47, lens control section 49, and X-Y scan offset control section are obtained. 51, read out each control value for the main Faraday control section 53a1 and the end station control section 531) in a predetermined order,
It is sent to the control value determining means 35a.

Here, the working conditions include the driving energy [kV], as shown in the column 63 corresponding to the name of the control data table 60, as shown in FIG.

Beam current [/ZA, dose 1-Jl: number of c ions/cn? This is the ionic species [B, P, As”!;

Further, as various control values as control parameters for the ion implanter 30, as shown in column 62 of the control data table 60, filament current value, arc current value,
Source magnet current value.

Judgment value A for analyzer current value, lens adjustment value, XY scan electrification value, offset value (OFFSET value), beam current value (maximum value), view/1tlI waveform.

B, C, etc. Note that A is the integral value of the beam current in the first vertical part of the observed waveform shown in Fig. 4, and B is the -r7 part of the 10th-order waveform in the q-dot part in the center. C is the integral value of the beam current in the rear rising part of the next waveform. Here, these row values are calculated by the beam current integral value calculating means 35i based on the data from the observation data generating stage r 35d.

-. On the other hand, the control value determination means 35a sequentially retrieves these control values (excluding determination values A, B, and C) corresponding to each control unit from the control data search means 35c, 1
The measured control data from each control unit obtained from the input/output control circuit 33 is compared with the [1 standard value, and the X
The control data corresponding to the values are sequentially sent to the row control A11[] to the control value output child actor 35b.

The first control value output stage 35b sends control data sent from the first control value determination stage 35a and the optimal waveform control means 351 (to be described later) to the human output control circuit 33, and sequentially outputs the control data to the ion source control section 43 and the analyzer magnet control section. 45, beam energy control section 47, lens control section 49, X-Y scan offset control section 51, main Faraday control section 53
a, and sends it to the end staining control 8 (<53b) to perform control so that the control value indicated by the work name is reached.

Further, the work condition calculation/judgment stage 35g obtains data measured from each control section of the ion implanter 30 from the input/output control circuit 33, and calculates the implant energy [k, V] and beat, which are the work conditions, from the input/output control circuit 33. Current Cu A, dose 1
The number of ions/c J is calculated, and each of these calculated values is calculated as the +■ indentation energy t' [kV] in the column 63 of the control data table 60 in FIG. 4 obtained from the first stage of control data search 35C. , Beano, current [llAko, dose i
For each value of 1 ([ion h / c + t/'], determine whether it matches a predetermined control range or i (7), and Once the control is within the capacity range, the optimal control is generated and this is tested.
It is sent to the J optimum control data storage stage 35f.

In the trial optimum control data storage means 35f, the optimum:I
Based on the AND condition of the ii control signal 4 and the optimal control signal from the optimal waveform control means 35h, which will be described later, the control data table 60 is created corresponding to the work condition (target control value) inputted with the specific 4'E business name. Each control value when optimally adjusted to (
The filament current value, arc current value, source magnet current value, analyzer current value, lens adjustment value, XY bias voltage value, offset value (OFFSET value), and beam current value (maximum value) are obtained from the human output control circuit 33 and are Then, judgment values (A, B, C, etc.) for the observed waveforms are obtained from the beam current integral value calculating means 35i and stored in the column 64 of the control data table 60 corresponding to the work name.

Further, the optimum waveform control means 351] sends a control signal to the first control value output stage 351) to determine the filament current value, arc current value, and source magnet current value.

The human output control circuit 3 performs fine adjustment control of the analyzer current value.
The peak value of the beam current 4111 is detected from the constant value of the beam current 4111 obtained from the control data measurement circuit 32 via the control circuit 35i, and the current determination values A, B, and C are obtained from the beam current integral value calculation stage 35i, and the current judgment values A, B, and C are obtained from the beam current integral value calculation stage 35i. The determination values A, B, and C of the control data table 60 obtained from the data search means 35c are compared to determine whether they match (or whether they fall within a predetermined tolerance range). As a result of this determination, a control signal corresponding to the difference between these determination values is sent to the control value output means 351) for fine adjustment control. Also, the result of this judgment is a match (or 111
(within the control range), the optimum control signal is sent to the trial optimum control data storage means 35f.

Further, the optimum waveform control means 3511 controls the waveform m corresponding to the beam current value and the 1-1 target determination values A, B, and C.
(See FIG. 4) is sent to the display 36 to be displayed in the form of a figure, and the peak value or maximum value is also sent to the working condition calculation and determination means 35g and stored in the control data table 60. The system determines whether the value matches the specified value (or whether it falls within a predetermined control range).

By the way, in this embodiment, the accuracy is improved and the 171-time is shortened by two-stage control.
In the first stage, the optimal waveform control means 35h performs
Only one side of X and Y is scanned alternately, and control is performed by finding the optimum value in the sharp part of the waveform. In the second stage, the trial optimum control data storage means 35f stores the adjusted value after execution in recipe 891, and uses it as the next start-up data.

Next, the overall processing of such automatic stand-up control will be explained with reference to FIG.

In step (2), the ion implantation device 30 and the automatic rise control device 31 are powered on, and in step (2), the input name (work name) is entered from the keyboard 37, and the arithmetic processing unit 35 follows the input name manually. The control data table 60 shown in FIG. 4 with the corresponding memory name is transferred from the disk 38 to the memory.

In the next step (2), the current 71 control values of each control section of the AEON 71 person device 30 are obtained via the control data measurement circuit 32,
In addition, 1°L empty value, state ffg of door open/closed state, etc. 4.
, >;' is obtained from the input/output control circuit 33, its operating mode is confirmed, and a fixed value for turning on the device is set.゛Fixed values in this case include selection of control ion species, cent of the gas flowmeter, beam energy to increase the beam by 1'/l, and control values for the lens control unit.

This is a predetermined value such as a control value for the offset control section.

Then, in the next step (2), the bee 11 is increased by S'Z, -1-, and in step (2) it is determined whether or not there is past trial control data. This determination is made with reference to the flag in the column 62 of the trial data f1°jiiE of the control data table 60. As a result of this judgment, the flag indicating that there is trial data is set to \γ
If so, in step ①, select the control ion species as standard control, gas flow; , beam energy for passing the ion beam 1., lens control unit 49. The corresponding control values are first set in the offset control unit 51, and the filament current value, arc current value, and source magnet current value are further set in the control data table 60 according to the reduced control data.

1-yr slowly while monitoring the analyzer current value.
4 and control each of these control values to match the data shown in the column 64 of the control data table 60, or to set them as 11 target values so that they fall within a predetermined control range. Then, the peak value of the beam current is detected. In addition,
This detection is a value determined in advance depending on the ion species, and is initially controlled to be set to a smaller value, and each control value is adjusted so that the beam reaches its maximum value while raising the temperature. Ru.

Next, in step (2), fine adjustment and checking are performed.

The details of the fine adjustment are as follows: ■Offset fine adjustment In general, 1t is required only in the X direction, and the observed waveform in Figure 4 is null.
i! 2, i11゛(ni4-fset i, ow anyasu)・, adjust the off HIGH anyasuto.

■ Lens fine adjustment Scans only one side of X and Y, and controls by finding the optimum value for the sharp part of the waveform.
Lens TRIM for both X scan and Y scan
(lens trimmer), lens balance, lens LOW adjustment, and lens HIGH adjustment to i[1] and waveform A in Fig. 4.

B, Cff1 < minute beam current integral value is set to the minimum value.

■Overscan fine adjustment Adjust the X and Y scans by 1 for both the X scan and Y scan to a value that makes the waveform in Figure 4 15% of the total.

■Check Judgment value data A, B, C in the data tried last time
Based on the lens adjustment value (A.

B, C) Judgment of lIlin and J! T? J2,a
It is determined whether ffi< is within 20% of the total.

Then, in the next step (2), the trial data is stored in the recording device.

This storage is carried out by a trial optimum control data storage r single stage 35f, and the data resulting from the fine adjustment in step 1 is stored in the form of a control table 60 shown in FIG. 3 as a manual recipe name table. Note that when there is already stored control data, it is updated and the latest control data is stored.

Here, the control data stored is as follows.

a) Filament current value, b) Arc current value.

C) Source magnet current value, d) Analyzer magnet current value, e) Lens adjustment value (lens TRIM, lens balance, lens LOW adjustment.

Lens HIGH adjustment), f) Offcent adjustment value (
offset, N, OW adjustment, off HIGH adjustment), g) X-Y scan voltage value, h) beam current value,
i) 't' fixed value (A, B, C). Note that A, B, and C are each the minimum value (min).

In this way, the J8 integer value after real <r' is stored in the / pin name middle position, and the next \7. Let Ll be data. Once such control data is stored, in the next step [phase], the dose processor 54 is activated to start ion implantation into the wafer.

- On the other hand, if there is no test 11 data as determined in the previous step (2), the acceleration voltage is controlled in step (a) so that the beam energy becomes the specified [keV] value. The monitoring data at this time is used only to determine whether the acceleration voltage has reached the set value. In this way, the beam energy is set.

Next, in step ①a, values corresponding to the ion species and accelerating voltage are determined in advance, and the offset LOW azimuth]
・Set the value and off-HIGH adjustment value. Then, start scanning for both X and Y, and perform offset adjustment by adjusting the offset LOW adjustment and off HIGH adjustment to the value that minimizes the current flowing in May/Friday.

In the next step
Find the value corresponding to the lens and TRIM the lens.

Lens balance, lens LOW azimuth l-, lens H
Set the IGH adjustment row value. Mo,
At the 11th scan for both Y and Y, the lens balance is adjusted to a value that minimizes the current flowing through the main Faraday, and the lens system is adjusted.

In the next step, step (a), the [1 mark current value] is calculated when X and Y scans are stopped and overscan is performed.

[1 standard value=beam value

Then, perform overscanner adjustment by adjusting the X and Y scans so that the beam value is 1 target.

In the next step [phase] a, the dose level is set to 1 in the dose processor 54, and in step a, the beam current is set by controlling the arc current for 7 hours so that the beam current becomes the specified value. The process for determining the optimum control value begins after step (■).

Incidentally, step ■a and step ■a are processing routines for changing the work name, and the process proceeds to step ■.

By the way, the offroscope beer l,′
When observing the upstream waveform, a small observed waveform n is shown in Figure 4.
(The dotted line indicates that the accent in Table 71<) was undeterminable+1). Therefore, there was a portion where the dose amount was non-uniform in the circular edge portion 66 of the wafer 65. In addition, 67
is the wafer outer periphery, and 68 is a wafer installation stand (susceptor).

However, as in the present invention, by calculating the integral values of A, B, and C and increasing the vertical value so that they become [1 standard value ([]I waveform m: solid line display), the observed waveform n can be calculated. However, as shown in the judgment values A-A', B-B, and C-C', minute changes in the beam current are amplified and appear in the integral value, so it is easier than a human to judge the waveform. The judgment function is improved considerably.

Therefore, by making the fine adjustment as described above, the accuracy can be improved, and since each control value can be set at an appropriate value in advance, the time required to reach the appropriate value can be shortened.

Furthermore, the non-uniformity and irregularity of the dose 7H can be eliminated, and the yield can be improved.

As described above, in the embodiment, the filament current value, arc current value, source magnet current value, analyzer current value, lens adjustment value, and XY scan voltage are set as variable setting values according to the small data in the control data table. Although the lens adjustment value 3 is listed as the value and offset value,
Control values do not have to be applied to all of these, and
The working conditions are implantation energy, beam current value, and dose amount.

Some of the ion species etc. may be included in the control value.

[Effects of the Invention] As can be understood from the following explanation, the present invention includes a storage device, a measurement stage for measuring the beam current in the target section, an arithmetic processing device, and an ion 21-person device. The arithmetic processing unit calculates the beat l, which corresponds to the wafer, based on the beat t and current values obtained from the two-stage measurement 'tlF.
The first integral value of the first ＼rF of the thin skin shape, the first integral value of the ＼γ dot part in the center, and the second integral value of the second ＼Ｚｲ part of the next waveform and the rear part) It has integral value means for calculating the third integral value of the γ dot portion, and the first integral value in the optimum control state when the ion implantation apparatus is operated. Second
and the third integral value are stored in the storage device corresponding to the working conditions at that time, and the 21-person ion device is stored in the same way for the working conditions at t'41 and ~γl-. 1st in the optimal control state under the working conditions. The second and third integral values are read from the storage device and the integral value 3? jt+
The current 1st. The second and third integral values are 11; The waveform of the 11:i beam current is adjusted to the optimum value by controlling the beam current so that it approaches or reaches the second and third integral values, so fine adjustment is made to the optimum value. It is easy to do this, and it is possible to operate at optimum values in a short period of time. The judgment function is greatly improved. In addition, dose 1
11. It is possible to eliminate the non-uniformity of the process and improve the yield.

As a result, work efficiency will be improved 1. can be done.

[Brief explanation of drawings]

Fig. 1 is a diagram of the ion l soil insertion system to which this invention is applied, Fig. 2 is a flow chart of its \γ1-age processing, and Fig. 3 is a diagram of the search table necessary for the processing. An explanatory diagram, Fig. 4 is an explanatory diagram of observed waveforms, and Fig. 5 (a) is a diagram of a conventional ion 21-person device. FIG. 5(b) is an explanatory diagram of the ion source. 30... Ion implantation device, 31... Automatic point injection control device, 32... Control data measurement circuit. 33...Person output control circuit, 34...Bus, 35...
- Arithmetic processing unit, 35a... Control value determination means, 35b
... Control value output means, 35c... Operating data search means, 35d... Observation data generation means, 35e... Operating state monitoring means, 35f... Trial optimum control data storage means, 35g... Working condition calculation judgment means, 35h...
- Optimal waveform control means, 35i... Beam current integral value calculation means, 36... Display, 37... Keyboard, 38... Disk, 41... Ion source, 4
2... Ion extraction front stage acceleration section, 43... Ion source control section, 44... Quality analysis section, 45... Analyzer magnet, control train section, 46... Back stage acceleration section, 47 ...Beer, Energy Control Department, 48
... Lens system, 49... Lens control section, 50...
Beam deflection unit, 100... Ion l main input system. Patent Applicant: Tokyo Electron Co., Ltd. Agent: Patent Attorney: Kajiyama Tsuyoshi;
Dzui J)'Iυ Fourth illustration

Claims (3)

[Claims] (1) A storage device, a measuring means for measuring a beam current in a target portion, an arithmetic processing device, and an ion implantation device, and the arithmetic processing device performs a wafer measurement process based on a beam current value obtained from the measuring means. The first integral value of the first rising part of the beam current waveform corresponding to , the second integral value of the central rising part and the next rising part of the waveform, and the third integral value of the rear falling part. It has integral value means for calculating, and stores first, second and third integral values in the optimum control state when the ion implantation apparatus is operated in the storage device in correspondence with the working conditions at that time. When starting up the ion implantation apparatus, first, second, and third integral values in the optimum control state under work conditions similar to those at the time of start-up are read from the storage device. target control so that the current first, second, and third integral values calculated by the integral value calculating means approach or become the first, second, and third integral values in the optimal control state. The ion implantation system is characterized in that the beam current is started up so that the waveform of the beam current is optimized. (2) The storage device stores at least control values corresponding to variable setting values in the ion implantation apparatus related to control of beam current, etc. in accordance with working conditions, and the measuring means stores control values corresponding to variable setting values in the ion implantation apparatus related to control of beam current, etc. The beam current is measured, and the arithmetic processing unit obtains the optimum control value when the ion implantation apparatus is operated through the measurement means, and sets the first and second control values corresponding to the working conditions at that time. , are stored in the storage device together with the third integral value, and when starting up the ion implantation apparatus, the optimum control value and the first and second , the third integral value is read from the storage device and the ion implantation device is controlled based on the optimum control value to start up the beam current so that the waveform becomes optimum. The ion implantation system according to item 1. (3) The control values are filament current value, arc current value,
A patent claim characterized in that the source magnet current value, analyzer current value, lens adjustment value, XY scan voltage value, and offset value are included, and the working conditions include implantation energy, beam current value, dose amount, and ion species. The ion implantation system according to item 2.