JPS62110615A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS62110615A JPS62110615A JP25130685A JP25130685A JPS62110615A JP S62110615 A JPS62110615 A JP S62110615A JP 25130685 A JP25130685 A JP 25130685A JP 25130685 A JP25130685 A JP 25130685A JP S62110615 A JPS62110615 A JP S62110615A
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- magnetic field
- thin film
- magnetic
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気記録媒体に記録された信号磁界の再生に用
いる磁気抵抗効果型の薄膜磁気ヘッドに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a magnetoresistive thin film magnetic head used for reproducing a signal magnetic field recorded on a magnetic recording medium.
従来の技術
近年、磁気記録装置においてトラック密度の向上に伴う
トラック幅の短縮と、磁気テープ走行速度の低速化など
から再生ヘッドとして磁気抵抗素子を利用した磁気抵抗
効果型薄膜ヘッドが広く利用されつつある。2. Description of the Related Art In recent years, magnetoresistive thin-film heads that use magnetoresistive elements have been widely used as playback heads due to the shortening of track widths in magnetic recording devices due to improved track densities and the slowing down of magnetic tape running speeds. be.
第4図に従来の磁気抵抗効果型薄膜ヘッドの一例を示す
(例えば[マグネトレジステイブ ヘノズj (Mag
natoresistive Heads ) IIC
EETrans Mag 17 2884頁)。第4図
において41は強磁性基板、42は強磁性基板41上に
強磁性基板41と電気的に絶縁されて形成された第1の
導体薄膜、43は第1の導体薄膜42上に第1の導体薄
膜42と電気的に絶縁されて形成された磁気抵抗素子、
44′a−は下端が記録媒体46と、上端が磁気抵抗素
子43と磁気的に結合した軟磁性薄膜からなる前部ヨー
ク、44bは下端が磁気抵抗素子43と、上端が強磁性
基板41と磁気的に結合した軟磁性薄膜からなる後部ヨ
ーク、45&4sbは磁気抵抗素子43にセンス電流を
流すための第2の導体薄膜、46は記録用媒体、47は
記録媒体46の進行方向である。FIG. 4 shows an example of a conventional magnetoresistive thin film head (for example, [Magnetoresistive head).
Natoresistive Heads) IIC
EETrans Mag 17 2884 pages). In FIG. 4, 41 is a ferromagnetic substrate, 42 is a first conductive thin film formed on the ferromagnetic substrate 41 and electrically insulated from the ferromagnetic substrate 41, and 43 is a first conductive thin film formed on the first conductive thin film 42. a magnetoresistive element formed electrically insulated from the conductor thin film 42;
44'a- is a front yoke made of a soft magnetic thin film magnetically coupled to the recording medium 46 at the lower end and the magnetoresistive element 43 at the upper end; A rear yoke made of a magnetically coupled soft magnetic thin film, 45 & 4sb are second conductor thin films for flowing a sense current to the magnetoresistive element 43, 46 is a recording medium, and 47 is the traveling direction of the recording medium 46.
次に動作について説明する。Next, the operation will be explained.
第1の導体薄膜42には磁気抵抗素子43にバイアス磁
界を印加するだめの電流が流れている。A current for applying a bias magnetic field to the magnetoresistive element 43 flows through the first conductive thin film 42 .
記録媒体46からの信号磁界は前部ヨーク44a1磁気
抵抗素子43、後部ヨーク462Lへと流れる。The signal magnetic field from the recording medium 46 flows to the front yoke 44a1, the magnetoresistive element 43, and the rear yoke 462L.
このとき、磁気抵抗素子43には第2の導体薄膜45a
、45bによりセンス電流が流されており、信号磁界に
応じて磁気抵抗素子43の抵抗値が変化し、この抵抗変
化を電圧変化に変換することにより記録媒体4θ上の信
号を再生することができる。At this time, the magnetoresistive element 43 is covered with a second conductor thin film 45a.
, 45b, the resistance value of the magnetoresistive element 43 changes according to the signal magnetic field, and by converting this resistance change into a voltage change, the signal on the recording medium 4θ can be reproduced. .
一般に磁気抵抗素子43の抵抗変化ΔRはセンス電流の
向きと磁気抵抗素子43の磁化の向きとがなす角をθ、
最大抵抗変化を△RI!12Lxとするとき
ΔR=ΔRmlLxCO82θ ・・・・・
・(1)という関係がある。また、磁気抵抗素子43を
流れる信号磁束密度を85ig 、磁気抵抗素子43の
飽和磁束密度をBSとしたとき近似的にが成立し、(1
)式、(2)式より
となる。すなわち、理論的には磁気抵抗素子43は磁界
変化に対して第6図に示すような抵抗変化を示す。そし
て磁気抵抗素子43の抵抗変化による出力を高感度化お
よび直線応答化する目的で磁気平衡点を第6図の点50
に位置するため、第1の導体薄膜42を用いてバイアス
磁界を印加する。Generally, the resistance change ΔR of the magnetoresistive element 43 is determined by the angle between the direction of the sense current and the direction of magnetization of the magnetoresistive element 43.
△RI for maximum resistance change! When 12Lx, ΔR=ΔRmlLxCO82θ...
・There is the relationship (1). Further, when the signal magnetic flux density flowing through the magnetoresistive element 43 is 85ig, and the saturation magnetic flux density of the magnetoresistive element 43 is BS, approximately holds true, and (1
) and (2). That is, theoretically, the magnetoresistive element 43 exhibits a resistance change as shown in FIG. 6 in response to a change in the magnetic field. Then, in order to increase the sensitivity and linear response of the output due to the resistance change of the magnetoresistive element 43, the magnetic equilibrium point was set at point 50 in FIG.
Therefore, a bias magnetic field is applied using the first conductive thin film 42.
発明が解決しようとする問題点
しかし、高記録密度化に従って磁気抵抗素子が微少パタ
ーン化されると、不連続な磁壁移動によるバルクハウゼ
ンノイズがヘッド出力中に生ずるという問題があった。Problems to be Solved by the Invention However, when magnetoresistive elements are formed into minute patterns as recording density increases, there is a problem in that Barkhausen noise due to discontinuous domain wall movement occurs during head output.
つまり、消磁状態での磁気抵抗素子は多数の磁区を有し
ており、記録媒体からの信号磁界が磁気抵抗素子に作用
し、上記の磁区が不連続な移動を行なった時に第6図に
示すようなバルクハウゼンノイズを発生することになる
。In other words, the magnetoresistive element in the demagnetized state has many magnetic domains, and when the signal magnetic field from the recording medium acts on the magnetoresistive element and the above-mentioned magnetic domains move discontinuously, as shown in Figure 6. This will generate Barkhausen noise.
その結果、良好な信号再生を実現できないという問題点
を有していた。As a result, there was a problem in that good signal reproduction could not be achieved.
問題点を解決するための手段
上記問題点を解決するために本発明の薄膜磁気ヘッドは
、強磁性金属材料で構成された磁気抵抗素子と、磁気記
録媒体からの信号磁界を前記磁気抵抗素子へ導くための
ヨークと、前記磁気抵抗素子の比抵抗の変化を検知する
少なくとも2本の電極と、前記磁気抵抗素子を中心とし
て巻回したコイルから構成されている。Means for Solving the Problems In order to solve the above problems, the thin film magnetic head of the present invention includes a magnetoresistive element made of a ferromagnetic metal material and a signal magnetic field from a magnetic recording medium to the magnetoresistive element. It consists of a yoke for guiding, at least two electrodes for detecting changes in resistivity of the magnetoresistive element, and a coil wound around the magnetoresistive element.
作用
本発明は上記のように構成したことにより、磁気抵抗素
子を中心として巻回したコイルに直流電流を流し、コイ
ルから発生する直流磁界が前記磁気抵抗素子に印加され
る。この直流磁界は前記磁気抵抗素子を単磁区構造とす
るように作用するため、不連続移動に起因するバルクハ
ウゼンノイズの発生を防ぎ、良好な信号再生が実現でき
る。Operation With the present invention configured as described above, a direct current is passed through a coil wound around a magnetoresistive element, and a direct current magnetic field generated from the coil is applied to the magnetoresistive element. Since this DC magnetic field acts to make the magnetoresistive element have a single magnetic domain structure, it is possible to prevent Barkhausen noise caused by discontinuous movement and achieve good signal reproduction.
実施例
以下、本発明の一実施例について図面を参照しながら説
明する。第1図(a)は本発明の第1の実施例における
薄膜ヘッドの概略構成を示す平面図を示すものである。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 1(a) is a plan view showing a schematic configuration of a thin film head in a first embodiment of the present invention.
第1図(a)において11は磁気抵抗素子、12aは下
端が記録媒体(図示せず)と、上端が磁気抵抗素子11
と磁気的に結合した軟磁性薄膜からなる前部ヨーク、1
2bは下端が磁気抵抗素子11と、上端が強磁性基板1
5と磁気的に結合した後部ヨーク、13a、13bは磁
気抵抗素子11にセンス電流を流すための導体薄膜、1
4は磁気抵抗素子11を中心として巻回し、磁気抵抗素
子11に直流磁界を印加するだめの導体薄膜からなるコ
イルである。第1図(b)は本実施例における薄膜ヘッ
ドのコイル14での断面図である。第1図(b)におい
て、第1図(a)と同一のものについては同一番号を付
し説明を省略する。15は強磁性基板である。In FIG. 1(a), 11 is a magnetoresistive element, 12a has a recording medium (not shown) at its lower end, and a magnetoresistive element 11 at its upper end.
a front yoke made of a soft magnetic thin film magnetically coupled with
2b has the magnetoresistive element 11 at the lower end and the ferromagnetic substrate 1 at the upper end.
The rear yoke 13a and 13b are magnetically coupled to the conductive thin film 1 for passing a sense current to the magnetoresistive element 11.
Reference numeral 4 denotes a coil made of a thin conductive film wound around the magnetoresistive element 11 and used to apply a direct current magnetic field to the magnetoresistive element 11. FIG. 1(b) is a sectional view of the coil 14 of the thin film head in this embodiment. In FIG. 1(b), the same parts as in FIG. 1(a) are given the same numbers and their explanations will be omitted. 15 is a ferromagnetic substrate.
次に動作について説明する。Next, the operation will be explained.
磁気抵抗素子11にはバイアス磁界が従来例と同様な方
法で印加されている。(バイアス磁界印加の手段につい
ては図示せず)記録媒体からの信号磁界は前部ヨーク1
21L、磁気抵抗素子11、後部ヨーク12bと流れる
。また、磁気抵抗素子11には導体薄膜131L、13
bによりセンス電流が流されており、信号磁界に応じて
磁気抵抗素子11の抵抗値が変化し、この抵抗変化を電
圧変化に変換することにより記録媒体上の信号を再生す
ることができる。A bias magnetic field is applied to the magnetoresistive element 11 in the same manner as in the conventional example. (Means for applying a bias magnetic field are not shown) The signal magnetic field from the recording medium is applied to the front yoke 1.
21L, the magnetoresistive element 11, and the rear yoke 12b. Further, the magnetoresistive element 11 includes conductor thin films 131L, 13
A sense current is caused to flow through the magnetoresistive element 11, and the resistance value of the magnetoresistive element 11 changes in accordance with the signal magnetic field, and by converting this resistance change into a voltage change, the signal on the recording medium can be reproduced.
このとき、磁気抵抗素子11を中心にしたコイルには直
流電流が流れており、この電流により、磁気抵抗素子1
1の長手方向に直流磁界が印加される。この磁界は磁気
抵抗素子11を単磁区にするため、磁壁の不連続な移動
に起因するバルクハウゼンノイズの発生を防ぐことがで
きる。At this time, a direct current is flowing through the coil centered around the magnetoresistive element 11, and this current causes the magnetoresistive element 1 to
A DC magnetic field is applied in the longitudinal direction of 1. Since this magnetic field makes the magnetoresistive element 11 a single magnetic domain, it is possible to prevent Barkhausen noise caused by discontinuous movement of the domain wall.
第2図(&)、 (1))は本発明の第2の実施例を示
す薄膜磁気ヘッドの平面図および断面図である。同図に
おいて第1図と同様に構成されたものには同一番号を付
す。第1の実施例の構成と異なるのはコイル24の一部
を磁気抵抗素子11と電気的に結合させた点である。そ
して、導体薄膜13a。2(&), (1)) are a plan view and a sectional view of a thin film magnetic head showing a second embodiment of the present invention. In this figure, parts having the same structure as in FIG. 1 are given the same numbers. The difference from the configuration of the first embodiment is that a part of the coil 24 is electrically coupled to the magnetoresistive element 11. And a conductor thin film 13a.
13bを負電位にコイル24を正電位とし、センス電流
はコイル24より磁気抵抗素子11、導体薄膜131L
、13bへと流れる。また、コイル24には、第1の実
施例と同様、磁気抵抗電子11を単磁区にするために必
要な電流が流れているのは言うまでもない。13b is set to a negative potential and the coil 24 is set to a positive potential, and the sense current is passed from the coil 24 to the magnetoresistive element 11 and the conductor thin film 131L.
, 13b. Further, it goes without saying that, as in the first embodiment, a current necessary to make the magnetoresistive electrons 11 into a single magnetic domain flows through the coil 24.
第2の実施例の動作については基本的には第1の実施例
と同様であるので省略する。The operation of the second embodiment is basically the same as that of the first embodiment, so a description thereof will be omitted.
さて、第2の実施例において、第1の実施例と同様にバ
イアス磁界を外部から印加して信号磁界を再生すること
も可能であるが、第2の実施例においては、自己バイア
ス磁界を用いることによりさらにS/N比のよい信号再
生を行なうことができる。これについて第3図を参照し
ながら説明する。第3図において、第2図と同じ構成の
ものには同一番号を付した。318Lは第1の磁気抵抗
素子部、31bは第2の磁気抵抗素子部、32aは第1
の磁気抵抗素子部318Lを流れるセンス電流、32b
は第2の磁気抵抗素子部312Lを流れるセンス電流、
332Lは第1の磁気抵抗素子部312Lを流れるセン
ス電流32aの作る自己バイアス磁界、33bは第2の
磁気抵抗素子部31bを流れるセンス電流32bの作る
自己バイアス磁界、34はコイル24を流れる電流、3
6は第1の磁気抵抗素子部31aの再生信号と、第2の
磁気抵抗素子部31bの再生信号を差動増幅するアンプ
部36&、36bは抵抗である。Now, in the second embodiment, it is also possible to regenerate the signal magnetic field by applying a bias magnetic field from the outside as in the first embodiment, but in the second embodiment, a self-bias magnetic field is used. This allows signal reproduction with even better S/N ratio. This will be explained with reference to FIG. In FIG. 3, the same components as in FIG. 2 are given the same numbers. 318L is a first magnetoresistive element section, 31b is a second magnetoresistive element section, and 32a is a first magnetoresistive element section.
The sense current flowing through the magnetoresistive element portion 318L, 32b
is the sense current flowing through the second magnetoresistive element section 312L,
332L is a self-bias magnetic field created by the sense current 32a flowing through the first magnetoresistive element section 312L, 33b is a self-bias magnetic field created by the sense current 32b flowing through the second magnetoresistive element section 31b, 34 is the current flowing through the coil 24, 3
Reference numeral 6 denotes an amplifier section 36&, 36b which differentially amplifies the reproduction signal of the first magnetoresistive element section 31a and the reproduction signal of the second magnetoresistive element section 31b, which are resistors.
第3図(1))は磁気抵抗素子に印加される磁界(横軸
)と磁気抵抗素子の抵抗(縦軸)の関係を示した特性図
である。次に動作について説明する。コイル24を流れ
る電流34とセンス電流32J32bは、磁気抵抗素子
の形状(素子幅、素子部)とコイル25の形状(膜厚1
幅)を考慮することにより適当な値で流すことができる
。特にセンス電流3211,32bについては、自己バ
イアス磁界を印加できる電流値を設定することができる
。FIG. 3(1)) is a characteristic diagram showing the relationship between the magnetic field applied to the magnetoresistive element (horizontal axis) and the resistance of the magnetoresistive element (vertical axis). Next, the operation will be explained. The current 34 flowing through the coil 24 and the sense current 32J32b are determined by the shape of the magnetoresistive element (element width, element part) and the shape of the coil 25 (film thickness 1
By considering the width), it is possible to flow at an appropriate value. In particular, for the sense currents 3211 and 32b, it is possible to set a current value at which a self-bias magnetic field can be applied.
センス電流32a、 32bは互いに逆方向に流れてい
るため、自己バイアス磁界も互いに逆方向となり、自己
バイアス磁界は第3図(b)のB、、B2となる。その
結果、信号磁界36による第1の磁気抵抗素子部31a
と第2の磁気抵抗素子部31bは出力37a、37bを
出し、これらの出力は逆位相となっている。このため、
後続のアンプ35に上り差動増幅が可能となり、S/N
比のよい再生信号が得られる。コイル26に流れる電流
34の作る磁界により磁気抵抗素子11が単磁区となり
、バルクハウゼンノイズの発生を防ぐことは言うまでも
ない。Since the sense currents 32a and 32b are flowing in opposite directions, the self-bias magnetic fields are also in opposite directions, and the self-bias magnetic fields become B, . . . B2 in FIG. 3(b). As a result, the first magnetoresistive element portion 31a due to the signal magnetic field 36
The second magnetoresistive element section 31b outputs outputs 37a and 37b, and these outputs have opposite phases. For this reason,
Differential amplification is possible at the subsequent amplifier 35, and the S/N
A reproduced signal with a good ratio can be obtained. Needless to say, the magnetic field created by the current 34 flowing through the coil 26 causes the magnetoresistive element 11 to become a single magnetic domain, thereby preventing Barkhausen noise from occurring.
なお、第1の実施例でコイル14ば1ターンとしたが2
タ一ン以上であっても同様な結果が得られる。In addition, in the first embodiment, the coil 14 has one turn, but it has two turns.
Similar results can be obtained even at tangents or higher.
また、第2の実施例で、コイル24は1ターンとしたが
2タ一ン以上であっても同様な結果が得られる。ただし
、磁気抵抗素子と電気的に結合するのは1ケ所だけでな
ければならない。Further, in the second embodiment, the coil 24 has one turn, but the same result can be obtained even if the coil 24 has two turns or more. However, only one location must be electrically coupled to the magnetoresistive element.
発明の効果
以上のように本発明は、磁気抵抗素子を中心として巻回
するコイルを設けることにより、バルクハウゼンノイズ
の発生を防ぎ、S/N比のよい再生信号を得ることがで
きる。Effects of the Invention As described above, according to the present invention, by providing a coil wound around a magnetoresistive element, generation of Barkhausen noise can be prevented and a reproduced signal with a good S/N ratio can be obtained.
第1図(a)は本発明の第1の実施例における薄膜磁気
ヘッドの平面図、第1図fb)は同断面図、第2図(?
L)は本発明の第2の実施例における薄膜磁気ヘッドの
平面図、第2図(b)は同断面図、第3図(a)は本発
明の第2の実施例における平面図、第3図(b)は同磁
気抵抗素子の特性図、第4図は従来の薄膜磁気ヘッドの
斜視図、第6図は磁気抵抗素子の特性図、第6図はバル
クハウゼンノイズを発生した場合の磁気抵抗素子の特性
図である。
11・・・・・磁気抵抗素子、12a、12b・・・・
・・ヨーク、13L、13b・川・・導体薄膜、14・
川・・コイノペ15・・・・・・強磁性基板。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名If
−−−摸気抵抗素子
/、3 b /4 /4第
2 図
第 3 図
第4図
箒 5 図
イ辣に夕(お乳婁乞衆子1;卯処さiしる予盗糺ケト第
6 図
Nl−斗−−−バルクハクセラノイズ
不庄気求qた亀子1;印加プン魅ぞη強さ手続補正書(
方式)
%式%
1事件の表示
昭和60年特許願願下51306 号2発明の名称
薄膜磁気ヘッド
3補正をする者
事件との関係 特 許 出 願
大佐 所 大阪府門真市大字門真1006番地名 称
(582)松下電器産業株式会社代表者 谷
井 昭 雄
4代理1人 〒571
住 所 大阪府門真市大字門真1006番地松下電器産
業株式会社内FIG. 1(a) is a plan view of a thin film magnetic head according to the first embodiment of the present invention, FIG. 1fb) is a cross-sectional view of the same, and FIG.
L) is a plan view of a thin film magnetic head according to a second embodiment of the present invention, FIG. 2(b) is a sectional view thereof, and FIG. Figure 3(b) is a characteristic diagram of the magnetoresistive element, Figure 4 is a perspective view of a conventional thin film magnetic head, Figure 6 is a characteristic diagram of the magnetoresistive element, and Figure 6 is a diagram of the characteristics when Barkhausen noise is generated. FIG. 3 is a characteristic diagram of a magnetoresistive element. 11... Magnetoresistive element, 12a, 12b...
・Yoke, 13L, 13b・River・Conductor thin film, 14・
River... Koinope 15... Ferromagnetic substrate. Name of agent: Patent attorney Toshio Nakao and one other person If
---Resistance element /, 3 b /4 /4 Fig. 2 Fig. 3 Fig. 4 Fig. 5 Fig. Figure Nl-Doo---Bulk Hakusera Noise Unsho Qi Qta Kameko 1; Application Punmizo η Strength Procedure Amendment (
Method) % formula % 1 Indication of the case 1985 Patent Application No. 51306 2 Name of the invention Thin film magnetic head 3 Relationship with the person who corrects the case Patent application
Colonel Tokoro 1006 Oaza Kadoma, Kadoma City, Osaka Name (582) Matsushita Electric Industrial Co., Ltd. Representative Tani
Akio I 4 representatives 1 person Address: 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (1)
媒体からの信号磁界を前記磁気抵抗素子へ導びくための
ヨークと、前記磁気抵抗素子の抵抗変化を検知する少な
くとも2本の電極と、前記磁気抵抗素子を中心として巻
回されたコイルを有することを特徴とする薄膜磁気ヘッ
ド。a magnetoresistive element made of a ferromagnetic metal material, a yoke for guiding a signal magnetic field from a magnetic recording medium to the magnetoresistive element, and at least two electrodes for detecting a change in resistance of the magnetoresistive element; A thin film magnetic head comprising a coil wound around the magnetoresistive element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60251306A JP2563255B2 (en) | 1985-11-08 | 1985-11-08 | Thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60251306A JP2563255B2 (en) | 1985-11-08 | 1985-11-08 | Thin film magnetic head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62110615A true JPS62110615A (en) | 1987-05-21 |
JP2563255B2 JP2563255B2 (en) | 1996-12-11 |
Family
ID=17220844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60251306A Expired - Lifetime JP2563255B2 (en) | 1985-11-08 | 1985-11-08 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2563255B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4922360A (en) * | 1987-09-24 | 1990-05-01 | Hitachi, Ltd. | Magnetic head |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121616A (en) * | 1982-12-28 | 1984-07-13 | Fujitsu Ltd | Magnetic head |
-
1985
- 1985-11-08 JP JP60251306A patent/JP2563255B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121616A (en) * | 1982-12-28 | 1984-07-13 | Fujitsu Ltd | Magnetic head |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4922360A (en) * | 1987-09-24 | 1990-05-01 | Hitachi, Ltd. | Magnetic head |
Also Published As
Publication number | Publication date |
---|---|
JP2563255B2 (en) | 1996-12-11 |
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