JPS62105124A - Optical switch and information memory - Google Patents
Optical switch and information memoryInfo
- Publication number
- JPS62105124A JPS62105124A JP61249786A JP24978686A JPS62105124A JP S62105124 A JPS62105124 A JP S62105124A JP 61249786 A JP61249786 A JP 61249786A JP 24978686 A JP24978686 A JP 24978686A JP S62105124 A JPS62105124 A JP S62105124A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- laser
- optical switch
- information storage
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24328—Carbon
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Optical Head (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、ニトロシル青酸塩・単結晶と、当該単結晶の
照射されるべき或いは照射された位置の読み取りとポン
ピング（Ｐｕｍｐｅｎ）のための輻射線の発生用光源と
、単結晶の位置の解かれた照射のための輻射線の伝達用
装置と、並びに単結晶の位置から出る光子の計測用の光
検波器とから成る光スイッチ乃至情報記憶装置に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a nitrosyl cyanide single crystal, a light source for generating radiation for reading and pumping the position of the single crystal to be irradiated or irradiated, The present invention relates to an optical switch or an information storage device consisting of a device for transmitting radiation for position-resolved irradiation of a single crystal and a photodetector for measuring photons emanating from the position of the single crystal.
いわゆる「光コンピュータ」は、現在研究と開発の対象
である。しかしながら従来、光コンフィジカル・レビュ
ー・レターズ（ＰｈｙｓｉｃａｌＲｅｖｉｅｗ Ｌｅｔ
ｔｅｒｓ） ５３巻ナンバー１８ （１９８４年ｌθ月
２９日）から、温度が１６０°Ｋ以下で波長が４００〜
５４０ｎｒａの輻射線によって、Ｎａ、／Ｐｅ（ＣＮ）
・２ＨｚＯ−単結晶が長時間準安定の状態に置かれる
ことが知られている。温度が１６０°Ｋより高く赤い光
の照射によって準安定の状態は再び減少する。So-called "optical computers" are currently the subject of research and development. However, conventionally, optical physical review letters (Physical Review Let
ters) Volume 53 Number 18 (Lθ Month 29, 1984), when the temperature is below 160°K and the wavelength is 400 ~
By radiation of 540nra, Na,/Pe(CN)
-2HzO- It is known that single crystals remain in a metastable state for a long time. When the temperature is higher than 160°K and irradiation with red light, the metastable state is reduced again.
本発明の課題は、１６０°Ｋより高温の際装入可能な単
結晶を有し、少なくとも技術の部分領域において適用し
うる光スイッチ乃至情報記憶装置の創出にある。The object of the invention is to create an optical switch or information storage device which has a single crystal that can be loaded at temperatures above 160° K and which can be applied at least in some areas of technology.
本発明の基礎をなす課題は、特許請求の範囲第１項の特
徴部分に記載の構成を有した光スイッチ乃至情報記憶装
置によって解決される。The problem underlying the present invention is solved by an optical switch or an information storage device having the configuration described in the characterizing part of claim 1.
意外にも記載のように、Ｂａ／Ｐｅ（ＣＮ）ｓＮＯ／ｎ
ＨｔＯ−単結晶にあって、これを位置解きして準安定の
状態に変えるのに、２００°Ｋまで冷却すれば部分であ
る。Surprisingly, as described, Ba/Pe(CN)sNO/n
In order to resolve the position of an HtO single crystal and change it to a metastable state, it is only necessary to cool it to 200°K.
準安定の状態への単結晶の「ポンピング」乃至変化は、
選択的に特許請求の範囲第１項に示された波長によって
なされる。本来の状態−状態Ｏ−への戻り変化乃至消滅
は、選択的に示された波長の赤い光によってなされる。“Pumping” or changing a single crystal to a metastable state is
Alternatively, the wavelengths indicated in claim 1 are used. The change back to the original state - state O - or extinction is effected by red light of a selectively indicated wavelength.
両方の状態（状態Ｏと状態１）の間の変化は可逆的に及
び任意にしばしば繰り返され、その際プロセスの速さは
恐ら＜１０″−１２秒のオーダ（核振動）である。The change between both states (state O and state 1) is reversibly and optionally repeated frequently, with the speed of the process possibly being on the order of <10''-12 seconds (nuclear oscillations).
照射され、状態Ｉになった一単結晶の位置は、用いられ
た輻射に対してもっと少ない透過を、本来の状態、即ち
状態Ｏにおいて行う。これは、透過する、或いは反射す
る光子の数により、位置の解かれる状態を認めることが
できる。The position of a single crystal that has been irradiated and is in state I will transmit much less of the radiation used in its original state, ie in state O. This allows the position to be resolved depending on the number of photons that are transmitted or reflected.
本発明の装置は、事情に応じて、蓄積された情報がコン
ピュータ制御され、蓄積後直ちに、或いはしばらくして
から読み取られるとしても、選択により高速スイッチと
して、或いは任意の蓄積時間を宵した情報記憶装置とし
て装入される。Depending on the circumstances, the device according to the invention can optionally be used as a fast switch or as an information storage device for any storage time, even if the stored information is computer-controlled and read immediately after storage or after some time. It is loaded as a device.
変化と戻り変化のプロセスは、単結晶の規格化には依存
しない。しかしながら単結晶に光検波器が後続する場合
には、単結晶は厚さが約０゜０５〜０．２５ｍｍの薄い
円盤の形状を有していることが有効である。The process of change and back change does not depend on single crystal normalization. However, if the single crystal is followed by a photodetector, it is advantageous for the single crystal to have the shape of a thin disk with a thickness of about 0.05 to 0.25 mm.
このような単結晶の使用の場合、輻射線の透過、即ちそ
の場で単結晶を離れる光子の数により、単結晶の状態を
その場で、単結晶に後続する光検波器によって測定する
ことが可能である。In the case of the use of such single crystals, the state of the single crystal can be measured in situ by the transmission of radiation, i.e. the number of photons leaving the single crystal in situ, by means of a photodetector following the single crystal. It is possible.
本発明のスイッチ乃至情報記憶装置の有効な実施様式は
、光源が数ＩＩＷの出力を有した二つのレーザから成る
ところにある。波長λ、である輻射線を輻射する一方の
レーザは、単結晶の位置解きをするポンピングに用いら
れ、波長λ。An advantageous implementation of the switch or information storage device according to the invention is that the light source consists of two lasers with a power of several IIW. One laser, which emits radiation at wavelength λ, is used for pumping the position of the single crystal, and has a wavelength λ.
である輻射線を輻射する他方のレーザは、単結晶の位置
解きをする読み取りのために装入される。その際更に、
レーザをパルスレーザとして形成することが有効である
。準安定の状態１への変化は、一つのパルスによってな
され、その間に光検波器が遮断される。対応して読み取
りも同様に一つのパルスによってなされる。The other laser, which emits radiation of , is charged for reading to resolve the position of the single crystal. In addition, at that time,
It is advantageous to design the laser as a pulsed laser. The change to metastable state 1 is made by one pulse, during which the photodetector is turned off. Correspondingly, reading is also done with one pulse.
当該装置の実施様式を図面に概略的に示し、以下に詳細
に説明する。The implementation of the device is shown schematically in the drawing and is explained in more detail below.
スイッチ乃至情報記憶装置は、レーザＩとレーザ■との
輻射がそれぞれ数ｍＷの出力でレーザ鏡２と３とを介し
て向けられているＢａ／Ｆｅ（ＣＮ） ５Ｎ Ｏ／ｎＨ
ｔｏ−単結晶ｌから成っている。The switch or information storage device is made of Ba/Fe(CN) 5N O/nH, in which the radiation of laser I and laser II is directed through laser mirrors 2 and 3 with an output of several mW, respectively.
to- consists of a single crystal l.
図面には示されていないコンピュータ制御装置を用いて
レーザ鏡２と３とか動かされ、輻射が単結晶の表面に、
予め与えられたプログラムに従って到達する。レーザＩ
の振動輻射の波長はλ１である。それによって単結晶ｌ
のパルスの当る各々の位置において、準安定の状態１が
生ずる。光検波器或いは単結晶の各々当る位置に応じた
ダイオードはパルスの間じゅう、有効に遮断される。Laser mirrors 2 and 3 are moved using a computer control device not shown in the drawing, and radiation hits the surface of the single crystal.
Reach according to a pre-given program. Laser I
The wavelength of the vibrational radiation is λ1. Thereby single crystall
At each position hit by a pulse of , a metastable state 1 occurs. The photodetector or the diode depending on the position of the single crystal, respectively, is effectively blocked during the pulse.
レーザパルスの強度に従いそれぞれこのように情報が単
結晶中に蓄積される。Information is thus stored in the single crystal depending on the intensity of the laser pulse.
情報の読み取りのため、或いは指令のために波長λ、の
レーザ■のパルスは、同様にコンピュータ制御されて動
くレーザ鏡３を介して単結晶の位置に向けられる。その
際、当該位置の状態に応じてレンズ系４を介して光子輻
射が光検波器５の対応するダイオードに向けられる。こ
の場合、同時に準安定の状態Ｉが状態Ｏに変換される。For reading information or issuing commands, pulses of a laser beam of wavelength λ are directed to the position of the single crystal via a laser mirror 3 which is also moved under computer control. The photon radiation is then directed via the lens system 4 to the corresponding diode of the photodetector 5 depending on the state of the position in question. In this case, the metastable state I is transformed into state O at the same time.
光検波器５によって保持される信号は、信号の再処理（
データ処理、情報の図表現等）用の装置（図示せず）に
伝達される。The signal held by the photodetector 5 is processed by signal reprocessing (
data processing, graphical representation of information, etc.) to a device (not shown).
図面は本発明の一実施例の概略図である。 The drawing is a schematic diagram of an embodiment of the invention.
Claims (1)
された位置の読み取りとポンピングのための輻射線の発
生用光源と、 単結晶の位置の解かれた照射のための輻射線の伝達用装
置と、 並びに単結晶の位置から出る光子の計測用の光検波器と
から成る光スイッチ乃至情報記憶装置において、 −単結晶がＢａ／Ｆｅ（ＣＮ）＿５ＮＯ／ｎＨ＿２Ｏ・
単結晶（１）であること、 −光源がポンピングのために４３０〜５１０ｎｍの波長
λ＿１を生ずること、 −光源が読み取りのために６００〜６６０ｎｍの波長λ
＿２を生ずること、 −単結晶の冷却のための装置が２００°Ｋの領域の温度
を備えていること、 を特徴とする光スイッチ乃至情報記憶装置。 ２）単結晶（１）の厚さが０．０５〜０．２５ｍｍであ
ることを特徴とする特許請求の範囲第１項記載の光スイ
ッチ乃至情報記憶装置。 ３）光源が二個のレーザ（レーザ I とレーザII）から
成り、輻射線の調整用装置としてレーザ鏡（２と３）が
備えられていることを特徴とする特許請求の範囲第１項
又は第２項記載の光スイッチ乃至情報記憶装置。 ４）レーザ（レーザ I とレーザII）がパルスレーザで
あることを特徴とする特許請求の範囲第３項記載の光ス
イッチ乃至情報記憶装置。[Claims] 1) A single crystal, a light source for generating radiation for reading and pumping the position of the single crystal to be irradiated or irradiated, and a light source for generating radiation for reading and pumping the position of the single crystal; In an optical switch or information storage device consisting of a device for transmitting radiation for the purpose of operation, and a photodetector for measuring photons emitted from the position of the single crystal, - the single crystal is Ba/Fe(CN)_5NO/nH_2O.
being single crystal (1); - the light source produces a wavelength λ_1 of 430-510 nm for pumping; - the light source produces a wavelength λ_1 of 600-660 nm for reading.
An optical switch or information storage device, characterized in that: - the device for cooling the single crystal has a temperature in the range of 200°K. 2) The optical switch or information storage device according to claim 1, wherein the single crystal (1) has a thickness of 0.05 to 0.25 mm. 3) Claim 1 or 3, characterized in that the light source consists of two lasers (Laser I and Laser II), and a laser mirror (2 and 3) is provided as a radiation adjusting device. The optical switch or information storage device according to item 2. 4) The optical switch or information storage device according to claim 3, wherein the lasers (Laser I and Laser II) are pulsed lasers.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3538424.7 | 1985-10-29 | ||
| DE19853538424 DE3538424A1 (en) | 1985-10-29 | 1985-10-29 | AS OPTICAL SWITCH OR INFORMATION STORE USED DEVICE |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62105124A true JPS62105124A (en) | 1987-05-15 |
Family
ID=6284724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61249786A Pending JPS62105124A (en) | 1985-10-29 | 1986-10-22 | Optical switch and information memory |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS62105124A (en) |
| DE (1) | DE3538424A1 (en) |
| FR (1) | FR2589256A1 (en) |
| GB (1) | GB2182455A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008198550A (en) * | 2007-02-15 | 2008-08-28 | Shin Kobe Electric Mach Co Ltd | Packaging box for battery |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63272092A (en) * | 1987-04-30 | 1988-11-09 | Yoshiaki Arata | Forming method for superpowered composite laser beam |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4166254A (en) * | 1977-10-03 | 1979-08-28 | Bell Telephone Laboratories, Incorporated | Switched diffraction grating |
| JPS60247841A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Disk for optical memory |
-
1985
- 1985-10-29 DE DE19853538424 patent/DE3538424A1/en not_active Withdrawn
-
1986
- 1986-10-03 FR FR8613805A patent/FR2589256A1/en active Pending
- 1986-10-22 JP JP61249786A patent/JPS62105124A/en active Pending
- 1986-10-28 GB GB08625767A patent/GB2182455A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008198550A (en) * | 2007-02-15 | 2008-08-28 | Shin Kobe Electric Mach Co Ltd | Packaging box for battery |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8625767D0 (en) | 1986-12-03 |
| FR2589256A1 (en) | 1987-04-30 |
| DE3538424A1 (en) | 1987-04-30 |
| GB2182455A (en) | 1987-05-13 |
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