JPS6196736A - 半導体薄膜の分解装置 - Google Patents

半導体薄膜の分解装置

Info

Publication number
JPS6196736A
JPS6196736A JP21810184A JP21810184A JPS6196736A JP S6196736 A JPS6196736 A JP S6196736A JP 21810184 A JP21810184 A JP 21810184A JP 21810184 A JP21810184 A JP 21810184A JP S6196736 A JPS6196736 A JP S6196736A
Authority
JP
Japan
Prior art keywords
hydrofluoric acid
semiconductor thin
thin film
decomposition
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21810184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330981B2 (enExample
Inventor
Ayako Shimazaki
嶋崎　綾子
Rie Yamayoshi
山吉　理恵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP21810184A priority Critical patent/JPS6196736A/ja
Publication of JPS6196736A publication Critical patent/JPS6196736A/ja
Publication of JPH0330981B2 publication Critical patent/JPH0330981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP21810184A 1984-10-17 1984-10-17 半導体薄膜の分解装置 Granted JPS6196736A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21810184A JPS6196736A (ja) 1984-10-17 1984-10-17 半導体薄膜の分解装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21810184A JPS6196736A (ja) 1984-10-17 1984-10-17 半導体薄膜の分解装置

Publications (2)

Publication Number Publication Date
JPS6196736A true JPS6196736A (ja) 1986-05-15
JPH0330981B2 JPH0330981B2 (enExample) 1991-05-01

Family

ID=16714646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21810184A Granted JPS6196736A (ja) 1984-10-17 1984-10-17 半導体薄膜の分解装置

Country Status (1)

Country Link
JP (1) JPS6196736A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02192750A (ja) * 1989-01-20 1990-07-30 Toshiba Corp 半導体基板表面の不純物回収方法及び装置
JP2006059926A (ja) * 2004-08-18 2006-03-02 Komatsu Electronic Metals Co Ltd 処理装置
JP2006058081A (ja) * 2004-08-18 2006-03-02 Komatsu Electronic Metals Co Ltd 処理装置
JP2006059925A (ja) * 2004-08-18 2006-03-02 Komatsu Electronic Metals Co Ltd 処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02192750A (ja) * 1989-01-20 1990-07-30 Toshiba Corp 半導体基板表面の不純物回収方法及び装置
JP2006059926A (ja) * 2004-08-18 2006-03-02 Komatsu Electronic Metals Co Ltd 処理装置
JP2006058081A (ja) * 2004-08-18 2006-03-02 Komatsu Electronic Metals Co Ltd 処理装置
JP2006059925A (ja) * 2004-08-18 2006-03-02 Komatsu Electronic Metals Co Ltd 処理装置

Also Published As

Publication number Publication date
JPH0330981B2 (enExample) 1991-05-01

Similar Documents

Publication Publication Date Title
Oishi et al. Self‐diffusion of oxygen in single crystal and polycrystalline aluminum oxide
Below Jr et al. Kinetics of the formation of the ferric thiocyanate complex
Noakes et al. Chemical and counting advances in liquid scintillation age dating
Antonio et al. Design of spectroelectrochemical cell for in situ X-ray absorption fine structure measurements of bulk solution species
Farhi Continuous duty tonometer system
JPS6196736A (ja) 半導体薄膜の分解装置
KR102185321B1 (ko) 방사성탄소 연대측정 시료를 위한 aba법에 의한 전자동 화학전처리 장치
Appelman et al. Observation of astatine compounds by time-of-flight mass spectrometry
CN111426520B (zh) 碱金属取样装置
Burch et al. Absorption of hydrogen by palladium+ boron and palladium+ silver+ boron alloys
Wu et al. Critical small-angle X-ray scattering of the liquid sodium-lithium system
CN113856586B (zh) 一种用于碘的气液转化及气液两相在线取样的装置
US2969294A (en) Method of impregnating uranium in graphite
McLean et al. Surface complexes between O2, H2O and lithium
US3722872A (en) Combined specimen removal and vacuum distillation apparatus
Warrick et al. The Reactions of Iodine in Solution with Elementary Mercury
Nitsch et al. Liquid/liquid-mass transfer at swarms of droplets: kinetics of mass transfer in the system uranylnitrate, nitric acid, tributylphosphate
Glavicic Development and application of techniques for the microstructural characterization of hydrogen permeability in zirconium oxides
US3531388A (en) Method for promoting a chemical reaction with radioactive gas
James Techniques of gas analysis in metals
Savage et al. Engineering tests of the metal transfer process for extraction of rare-earth fission products from a molten-salt breeder reactor fuel salt
JPS60164330A (ja) 半導体薄膜の分解装置
JPH0543289B2 (enExample)
Djigailo et al. Comparative Analysis of the Results Obtained by Different Methods of Studying the Composition of Lithium-Containing Films on Diagnostic Targets in the T-11M Tokamak Chamber
CN118698619A (zh) 一种防潮控温避光的定量加药装置