JPS618980A - Light conducting element - Google Patents
Light conducting elementInfo
- Publication number
- JPS618980A JPS618980A JP59129860A JP12986084A JPS618980A JP S618980 A JPS618980 A JP S618980A JP 59129860 A JP59129860 A JP 59129860A JP 12986084 A JP12986084 A JP 12986084A JP S618980 A JPS618980 A JP S618980A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- ganx
- light
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000007 visual effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 18
- 230000003595 spectral effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- AUQMGYLQQPSCNH-UHFFFAOYSA-L NIR-2 dye Chemical compound [K+].[K+].C1=CC2=C(S([O-])(=O)=O)C=C(S([O-])(=O)=O)C=C2C(C2(C)C)=C1[N+](CC)=C2C=CC=CC=C1C(C)(C)C2=CC(C(O)=O)=CC=C2N1CCCCS([O-])(=O)=O AUQMGYLQQPSCNH-UHFFFAOYSA-L 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 101100273706 Talaromyces islandicus cctO gene Proteins 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光導電素子に関するもので２特にテレビカメラ
用撮像管ターゲットの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to photoconductive devices, and more particularly to improvements in image pickup tube targets for television cameras.
従来例の構成とその問題点
′従来、撮像管ターゲットの光導電材料として（Ｚｎ
（１−ｘ） Ｃｄｘ’ｌ’ｅ ） （丁ｎ２ Ｔｅ
３ ）’Ｊ ｙ、 用イ−Ｙ
た光導室形撮像管には、例えば白黒用のパニュービコン
”（商品名）と、カラー用として光学ストライプフィル
タを内蔵した１′ニユーコスビコン゛（商品名）等があ
る。この撮像管ターゲットは透明電極からの正孔の注入
を防ぐ目的で。Conventional structure and its problems 'Conventionally, Zn was used as the photoconductive material for the image pickup tube target
(1-x) Cdx'l'e ) (ding n2 Te
3) For example, there are two types of light guide chamber type image pickup tubes: the black-and-white ``Panubicon'' (product name), and the 1' ``Newcos Bicon'' (product name) with a built-in optical stripe filter for color images. This image pickup tube target is intended to prevent hole injection from the transparent electrode.
Ｚｎ５ｅやＺｎ Ｑ−ａ） Ｃｄａ Ｓ ｏ膜２透明電
極ト、 光導電材料（Ｚｎ（１−Ｘ） ＣｄｘＴｅ ）
（Ｉ＋ｎ２ Ｔｅ５）Ｙ１″″ｙ
との間に形成している。しかし正孔のブロッキング材料
としてＺｎ５ｅ ｆ用いたものは、光学的バンドギャッ
プが２．６７ （３０ｏＫ）ｅｖであるため４６０朋よ
シ短波長の光は吸収してしまい、（Ｚｎ （１−Ｘ）
ＣｄｘＴｅ）１−ｙ（Ｉｎ２ Ｔｅ５）’Ｉに光が入射
しなくなって青色感度が低下してしまうという欠点があ
る。またＺｎ （１−ａ） ＣｄａＳ ｆ用いたもの
は＋ ＺｎとＣｄ の係数ａの値を変化させることに
よシ分光特性全３５０ ｍｔｓから４９０順まで自由に
設定できる。この場合、ａ＝０にすると、すなわちＺｎ
（１−ａ） ＣｄａＳ ＝ ＺｎＳ になシ、青色
光はよく透過するが、抵抗が高いためＶＣ、（Ｚｎ （
１−ｘ） ＣｄｘＴｅ ） １−Ｙ （Ｉｎ ｚＴｅ、
：ｓ） ｙ 膜に電圧がかからなくなる。このような光
導電素子を撮像管ターゲットとして使用したときは、焼
付けの消える電圧が高くなシ、ターゲット電圧を高く設
定しなければならない。これは、テレビ画面に白点キズ
を多数発生させる原因となる。Zn5e or ZnQ-a) CdaSO film 2 transparent electrode, photoconductive material (Zn(1-X)CdxTe)
It is formed between (I+n2 Te5)Y1″″y. However, the material using Zn5e as a hole blocking material has an optical bandgap of 2.67 (30oK) ev, so it absorbs light with a short wavelength of 460 degrees, and (Zn (1-X)
There is a drawback that no light is incident on CdxTe)1-y(In2Te5)'I, resulting in a decrease in blue sensitivity. Further, in the case of using Zn (1-a) CdaS f, the spectral characteristics can be freely set from 350 mts to 490 mts by changing the value of the coefficient a of +Zn and Cd. In this case, if a=0, that is, Zn
(1-a) CdaS = ZnS, blue light is transmitted well, but the resistance is high, so VC, (Zn (
1-x) CdxTe) 1-Y (InzTe,
:s) y No voltage is applied to the membrane. When such a photoconductive element is used as an image pickup tube target, the target voltage must be set high because the voltage at which the image disappears is high. This causes many white spots to appear on the television screen.
また、ａ−１にしてＺｎ、（１−ａ） ＣｄａＳ ＝
ＣａＳにすると抵抗は低くなるが青色光が透過しなくな
シ、青色感度が低下してしまう。したがってａの値は透
過率と抵抗とのかねあいから最適値がＪ ある
。しかしながら、この中間膜材料の三元素には、当然な
がら蒸気圧に差があるため組成の制御が困難であり、し
たがって青感度のバラツキが多く生産の歩留シが低下し
てしまうという欠点があった。Also, a-1 is Zn, (1-a) CdaS =
If CaS is used, the resistance will be lower, but blue light will not be transmitted through it, and the blue sensitivity will be lowered. Therefore, the value of a has an optimum value based on the balance between transmittance and resistance. However, the three elements of the interlayer film material naturally have different vapor pressures, which makes it difficult to control the composition.Therefore, there is a drawback that the blue sensitivity varies widely and the production yield decreases. Ta.
発明の目的
本発明の目的は、青感度を向上させたことによシ可視光
全域にわたシ高感度な光導電素子盆再現性よく提供する
ことで塾る。OBJECTS OF THE INVENTION An object of the present invention is to provide a photoconductive element with high sensitivity over the entire visible light range with good reproducibility by improving blue sensitivity.
発明の構成
本発明は上記の目的を達するため、透明電極を有する透
光性基板上にＧ ｓ Ｎ ｘ膜を形成し、さうＫ ソノ
上Ｋ （Ｚｎ（１−ｘ） ＣｄｘＴｅ ） １− ｙ
（Ｉ ｎ ２ ′ｌｌ′ｅ３）ｙ、（ｏ≦Ｘ≦１．０
≦ｙ≦０．１）の光導電膜全形成してなる光導電素子を
構成したものである。Structure of the Invention In order to achieve the above-mentioned object, the present invention forms a GsNx film on a transparent substrate having a transparent electrode.
(I n 2 'll'e3)y, (o≦X≦1.0
y≦0.1), a photoconductive element is constructed in which all photoconductive films are formed.
実施例の説明
第１図は１本発明の光導電素子の断面図を示すものであ
る。すなわち１本発明の光導電素子は第１図に示すよう
に透明電極（２）付きの透光性基板（１）上にＧ ａ
Ｎ ｘ膜（３）ヲもうけ５次に光導電材 Ｆ料で
ある（Ｚｎ（１−ｘ） ｃｄｘ’ｒｅ）１−ｙ（Ｉｎ、
２ Ｔｅ３ ）ｙの膜（４）ｔ−形成したものである。DESCRIPTION OF EMBODIMENTS FIG. 1 shows a sectional view of a photoconductive element of the present invention. That is, 1 the photoconductive element of the present invention, as shown in FIG.
N
2Te3)y film (4)t-formed.
第２図は第１図の構造におけるエネルギーバンド図を示
すもので、第２図（ａ）は平衡状態、同図（ｂ）は撮像
動作させた場合のものである。光は透明電極からＧ ａ
Ｎ ｘ膜？透過し、（Ｚｎ（１−ｘ） ＣｄＸＴｅ ）
１−ｙ（Ｉ ｎｚ Ｔｅ ３ ） ｙ膜で吸収されて正
孔・電子対全発生する。発生した電子はトンネル効果に
よシＧａＮｘ中全通過して透明電極へ流扛、正孔は（ｚ
、−Ｘ）ＣｄｘＴｅ）１−ｙ ’（Ｉｎ２ Ｔｅ３ ’
Ｙ模膜中表面に向かって移動し、その部分の電子と中和
して表面電位を低下させ、信号電流として流れる。FIG. 2 shows an energy band diagram for the structure shown in FIG. 1, in which FIG. 2(a) shows an equilibrium state, and FIG. 2(b) shows a state of imaging operation. Light is transmitted from the transparent electrode to Ga
Nx membrane? Transmitted, (Zn(1-x)CdXTe)
1-y(InzTe3)y is absorbed by the y film and all hole/electron pairs are generated. The generated electrons pass through GaNx due to the tunnel effect and flow to the transparent electrode, and the holes are (z
, -X)CdxTe)1-y'(In2Te3'
It moves toward the surface of the Y model, neutralizes the electrons in that area, lowers the surface potential, and flows as a signal current.
Ｇａ Ｎ ｘは光学的バンドギャップが３．３９ ｅＶ
で（Ｚｎ （１−Ｘ） ＣｄｘＴｅ ） １−ｙ （
Ｉｎ’２ Ｔｅ３ ）ｙよシ大きく、したがって、３６
００よシ長波長の光を透過するととも゛に、電極からの
正孔の注入をブロッキングする。一方、電子は、Ｇ ａ
Ｎ ｘ膜中金トンネル効果によシ通過しなければなら
ず、そのためＧ ａ Ｎ ｘの膜厚は無制限に厚くでき
ず一定め最適値がある。GaN x has an optical bandgap of 3.39 eV
(Zn (1-X) CdxTe ) 1-y (
In'2 Te3 ) is larger than y, so 36
It transmits light with a wavelength longer than 0.00 nm, and blocks hole injection from the electrode. On the other hand, the electron is Ga
The gold must pass through the Nx film due to the gold tunneling effect, and therefore the thickness of the GaNx film cannot be increased without limit, but has a certain optimum value.
以下、具体的な実施例を示す。Specific examples will be shown below.
実施例 ｌ 第３図に実施例１の光導電素子の断面図を示す。Example l FIG. 3 shows a cross-sectional view of the photoconductive element of Example 1.
光学研摩したガラス基板ＩＤ上に透明電極としてＩ ｎ
２０３１１２を基板温度２５０℃、酸素分圧４Ｘ １
０ ｔｏｒｒ で１００ＯＡ真空蒸着法によシ形成
する。次にこの基板上にＱａＮｘ（１３１’ｅ形成する
。ＧａＮｘは、ＲＦスパッタリング法を用いて形成する
。ターゲットに純度６ＮのＧ ａ ｆ用い、Ａｒ ：Ｎ
２−３ ： ７の混合ガスで圧力ヲ３〜５Ｘ Ｉ Ｏ
ｔｏｒｒ 基板部５度３００°Ｃ１放電電力３０Ｗによ
シ％５００Ａの膜厚に形成する。次にこの基板全真空蒸
着装置に設定する。基板温度２００°Ｃにて（Ｚｎ０．
７ ｃｃｔＯ，３Ｔｅ）０．９５ （Ｉｎ２Ｔｅ３ ）
０．０５ （１４１ｋ Ｂ ｐ ｍ （Ｄ厚すニ形成Ｌ
−ソノｆｆｌ真空中５５０”Ｃで１５〜６０分熱処理ケ
おこなう。このようにして得られた光導電素子を撮像管
ターゲットとして撮像管に組みこんで分光特性を測定し
た。その結果を第４図の線Ｂに示す。I n as a transparent electrode on an optically polished glass substrate ID.
203112, substrate temperature 250℃, oxygen partial pressure 4X 1
It is formed by a 100OA vacuum evaporation method at 0 torr. Next, QaNx (131'e) is formed on this substrate. GaNx is formed using the RF sputtering method. Ga f with a purity of 6N is used as a target, and Ar:N
2-3: Pressure 3-5X IO with mixed gas of 7
torr substrate part 5 degrees 300 degrees C1 discharge power 30W to form a film thickness of 500A. Next, this substrate is set in a full vacuum evaporation apparatus. At a substrate temperature of 200°C (Zn0.
7 cctO,3Te)0.95 (In2Te3)
0.05 (141k B p m (D thickness)
- Heat treatment at 550"C in a vacuum for 15 to 60 minutes. The photoconductive element thus obtained was incorporated into an image pickup tube as a target and its spectral characteristics were measured. The results are shown in Figure 4. It is shown in line B of .
比較の為、従来〕Ｚ ｎ Ｓ ｅ （Ｚ ｎ （１−
ｎ）Ｃｄ Ｘ Ｔ ｅ） １ ＋＋ ｙ（Ｉｎ２ Ｔｅ
５）ｙ 構造の撮像管ターゲッドニュ−ビコン”の分光
感度時ｔｌ線Ａに示す。このように本発明の構成で用い
た撮像管ターゲットは、従来の撮像管ターゲットよシ青
感度が高くなり、可視光から近赤外光の領域にわたシ高
感度な撮像管ターゲットを得ることができる。For comparison, conventional] Z n S e (Z n (1-
n) Cd X T e) 1 ++ y(In2 Te
5) The spectral sensitivity of the image pickup tube target "Nubicon" with the y structure is shown in tl line A. In this way, the image pickup tube target used in the configuration of the present invention has higher spectral sensitivity than the conventional image pickup tube target, and the visible It is possible to obtain an imaging tube target with high sensitivity in the light to near-infrared light region.
実施例 ２
第５図に実施例２の光導電素子の断面図ケ示す。光学研
摩したガラス基板ｏＤ上に透明電極として５ｎｏ２（２
１スプレー法を用いて形成する。Example 2 FIG. 5 shows a cross-sectional view of a photoconductive element of Example 2. 5no2 (2
Formed using a one-spray method.
次にこの基板上にＧａ Ｎ ｘ（ハ）を形成する。Ｇａ
Ｎｘは１反応性クラスタビーム法を用いて形成する。Next, Ga N x (c) is formed on this substrate. Ga
Nx is formed using the one-reactive cluster beam method.
ＧａＮｘ （純度５Ｎ）の粉末’Ｔｈ０．１ｓ＋ｉψ
の噴出孔をもつるつぼに入れて１０００°Ｃで加熱する
。GaNx (purity 5N) powder 'Th0.1s+iψ
Place it in a crucible with a nozzle and heat it at 1000°C.
基板温度は４５０″Ｃでコントロールし、Ｎ２ガスｋ
５ Ｘ ｌ Ｏ−’ｔｏｒｒ 導入してＧ ａ Ｎ
ｘとＮ２ガスをイオン化させて８００Ａの膜厚に形成さ
せる。次にこの基板を真空蒸着装置に設定する。The substrate temperature was controlled at 450″C, and N2 gas
5 X l O-'torr Introduce G a N
x and N2 gas are ionized to form a film with a thickness of 800A. Next, this substrate is set in a vacuum evaporation apparatus.
ｔ 基板温度２００’Ｃにて−（Ｚｎａ 、 ７
Ｃｄ□ 、 ３ Ｔｅ ）０．９５’ （”２ Ｔ
ｅ５）ｏ、ｏ５ｃｌ！４）ｔ ８ ｐ ｍ ｔｖ厚す［
形成し、その後真空中５５０°Ｃで１５〜６０分熱処理
？おこなう。このようにして得られた光導電素子を撮像
管ターゲットとして撮像管に組みこんで分光特性を測定
した。ところ実施例１と同等の分光感度特性が得られた
。また（） ａ Ｎ ｘＯ形成方法はＲＦイオンプレー
ディング法でも形成可能であシ、ＧａＮｘ形成方法の違
いによる分光感度特性の違いはみられなかった。t At a substrate temperature of 200'C - (Zna, 7
Cd□, 3 Te)0.95'("2 T
e5) o, o5cl! 4) t 8 p m tv thickness [
Formed and then heat treated in vacuum at 550°C for 15-60 minutes? Let's do it. The thus obtained photoconductive element was incorporated into an image pickup tube as an image pickup tube target, and its spectral characteristics were measured. However, spectral sensitivity characteristics equivalent to those of Example 1 were obtained. Furthermore, ()aNxO can also be formed by the RF ion plating method, and no difference in spectral sensitivity characteristics was observed due to the difference in the GaNx formation method.
本発明の光導電素子は、透明電極を有する透光性基板上
にＧａＮｘ ｆ形成し、さらにその上に（Ｚｎ１−ｘ
Ｃｄｘ Ｔｅ）１−ｙ （Ｉｎ２ Ｔｅ３ ＞ｙの光導
電膜を形成しているが、この光導電膜を前半にＣｄＴｅ
を主成分とする膜？形成し、後半に（ＺｎＴｅ）
（Ｉｎ２Ｔｅ３ ）ｙ とする膜？形成した構１″′
ｙ
造にしても艮い。In the photoconductive element of the present invention, GaNx f is formed on a transparent substrate having a transparent electrode, and (Zn1-x
A photoconductive film with Cdx Te)1-y (In2 Te3 >y is formed, but this photoconductive film is made of CdTe in the first half.
A film whose main component is Formed and late (ZnTe)
(In2Te3)y film? Formed structure 1″′
y Even if it's made, it doesn't matter.
発明の効果
本発明は好適な正孔防止膜？形成して、青色感度を向上
させる０と′よシ可視光力゛ら近赤外 ２光の領
域にわたり高感度な光導電素子全得るも □−一
のでアシ、撮像管ターゲットとして用いた場合には他の
特性を劣化させることなく青色感度？向上させる。特に
青感度が高いのでカラー用撮像管ターゲットに適してい
る。またＧａＮｘ ｆもちいているため青感度のバラツ
キがなく再現性のよい撮像管ターゲットを得ることがで
きる。Effects of the Invention Is the present invention a suitable hole blocking film? It is possible to obtain a photoconductive element with high sensitivity over the near-infrared 2 light range from visible light power to 0 and ' to improve blue sensitivity by forming a photoconductive element. Can blue sensitivity be improved without degrading other characteristics? Improve. In particular, it has high blue sensitivity, making it suitable for color image pickup tube targets. Furthermore, since GaNx f is used, it is possible to obtain an image pickup tube target with no variation in blue sensitivity and good reproducibility.
第１図は本発明の光導電素子の基本的構成を示す断面図
、
第２図は第１図の断面図に対応した本発明の詳細な説明
するバンド図、
第３図は実施例１の断面図、
第４図は実施例■の光導電素子を撮像管ターゲットとし
て用いた場合の分光感度特性を従来のものと比較して示
すグラフ、
第５図は実施例２の断面図である。
ｒｎ−−−−一透光性基板
＋２１−−−−一透明電極
［３） −−−−−ＧａＮｘ
膜
曲線Ａ−−−実捲例１の分光感度特性
的＠Ｂ −−一従来のＺｎ５ｅを用いたニュービコンの
分光感度特性
σｎ−−−−−ガラス基板
圓−−−−−Ｉｎ２０３
（１３１−−−−−ＧａＮｘ
（１４−−−−−（Ｚ ｎｏ、７Ｃｄｏ、：ｙ、 Ｔ
ｅ ＞ ０，９５ （Ｉ ｎ ２ Ｔ ｅ ３） ０．
０５膜
（２］） −−−−−ガラス基板
（２２＋−−−−−５ｎ０２
Ｃ！３１−−−−− ＧａＮｘ
（２４１−−−−−（Ｚｎ０．７Ｃｄ０．３Ｔｅ）０．
９５ （Ｉｎ２ Ｔｅｚ）０．０５膜
特許出願人 松下電器産業株式会社
代 理 人 新 実 健 部（外１
名）
１１ａｌｌ
第２図FIG. 1 is a cross-sectional view showing the basic structure of the photoconductive element of the present invention, FIG. 2 is a band diagram explaining the present invention in detail corresponding to the cross-sectional view of FIG. 1, and FIG. 4 is a graph showing the spectral sensitivity characteristics when the photoconductive element of Example 2 is used as an image pickup tube target in comparison with a conventional one; FIG. 5 is a sectional view of Example 2. rn - - Transparent substrate + 21 - - Transparent electrode [3) - - - GaNx film curve A - - Spectral sensitivity characteristic of actual winding example 1 @B - - Conventional Zn5e Spectral sensitivity characteristic σn of Newbicon using
e > 0,95 (I n 2 T e 3) 0.
05 film (2]) ----Glass substrate (22+----5n02 C!31----- GaNx (241-----(Zn0.7Cd0.3Te)0.
95 (In2 Tez) 0.05 membrane patent applicant Matsushita Electric Industrial Co., Ltd. Agent Ken Shinmi (External 1)
name) 11all Figure 2
Claims (1)
さらにその上に（Ｚｎ＿（＿１＿−＿ｘ）ＣｄｘＴｅ）
＿１＿−＿ｙ（Ｉｍ＿２Ｔｅ＿３）＿ｙ・（０≦ｘ≦１
、０≦ｙ≦０．１）の光導電膜を形成した光導電素子。Forming a GaNx film on a transparent substrate having a transparent electrode,
Furthermore, on top of that (Zn_(_1_-_x)CdxTe)
_1_−_y(Im_2Te_3)_y・(0≦x≦1
, 0≦y≦0.1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59129860A JPS618980A (en) | 1984-06-23 | 1984-06-23 | Light conducting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59129860A JPS618980A (en) | 1984-06-23 | 1984-06-23 | Light conducting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS618980A true JPS618980A (en) | 1986-01-16 |
Family
ID=15020057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59129860A Pending JPS618980A (en) | 1984-06-23 | 1984-06-23 | Light conducting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS618980A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
| WO2000017941A1 (en) * | 1998-09-18 | 2000-03-30 | Mitsubishi Cable Industries, Ltd. | Semiconductor photodetector |
-
1984
- 1984-06-23 JP JP59129860A patent/JPS618980A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
| WO2000017941A1 (en) * | 1998-09-18 | 2000-03-30 | Mitsubishi Cable Industries, Ltd. | Semiconductor photodetector |
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