JPS6182468A - Color image sensor - Google Patents
Color image sensorInfo
- Publication number
- JPS6182468A JPS6182468A JP59204889A JP20488984A JPS6182468A JP S6182468 A JPS6182468 A JP S6182468A JP 59204889 A JP59204889 A JP 59204889A JP 20488984 A JP20488984 A JP 20488984A JP S6182468 A JPS6182468 A JP S6182468A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion element
- element array
- semiconductor film
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims description 86
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 26
- 238000000926 separation method Methods 0.000 abstract description 6
- 230000001788 irregular Effects 0.000 abstract 1
- 238000003491 array Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14667—Colour imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はカラーイメージセンサ、特にアモルファス半
°導体膜を用いて長尺化した場合に適した構造のカラー
イメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a color image sensor, and particularly to a color image sensor having a structure suitable for use in a long length using an amorphous semiconductor film.
原稿上の画像を読取るためのデバイスとして、大面積化
が容易なアモルファスシリコン膜を使用した密着型イメ
ージセンサと呼ばれる長尺イメージセンサの開発が盛ん
である。このようなイメージセンサの代表的な構造は、
基板上に素子毎に分割された個別電極としてのQr等に
よる金属電極。2. Description of the Related Art As a device for reading images on a document, a long image sensor called a contact image sensor using an amorphous silicon film, which can easily be made into a large area, is being actively developed. The typical structure of such an image sensor is
Metal electrodes such as Qr as individual electrodes divided for each element on the substrate.
水素化アモルファスシリコン躾、共通電極としてのIT
O膜等による透明電極を順次積層形成して、光電変換素
子列(フォトダイオードアレイ)を形成したものであり
、透明電極側から光を入射し、金fi電極を通して光電
流を取出す構成となっている。Hydrogenated amorphous silicon, IT as a common electrode
A photoelectric conversion element array (photodiode array) is formed by sequentially laminating transparent electrodes made of O films, etc., and the structure is such that light enters from the transparent electrode side and photocurrent is extracted through the gold fi electrode. There is.
このような構造のイメージセンサは単色雨傘を読取るに
は適しているが、カラー画像を読取ろうとすると、少な
くとも3倍の画素を必要とするため、解8度が低下する
という問題があった。この問題を解決するには色分離を
主走査方向(光電変換素子列の配列方向)でなく、これ
と直交する方向、すなわち副走査方向に行なえばよい。An image sensor with such a structure is suitable for reading a monochromatic umbrella, but when trying to read a color image, it requires at least three times as many pixels, resulting in a problem that the resolution is reduced by 8 degrees. To solve this problem, color separation should be performed not in the main scanning direction (the direction in which the photoelectric conversion element rows are arranged) but in a direction perpendicular to this direction, that is, in the sub-scanning direction.
ところが、副走査方向に色分離を行なうには少なくとも
3列の光電変換素子列を近接させて形成する必要がある
ため、前記金属電極からの引出し配線の配列凸度が増大
してイメージセンサの製造が困難となり、歩留りの低下
が避けられなくなる。また、内側の光電変換素子列にお
いては、隣接する素子と素子との間に外側の光電変換素
子列のための引出し配線を通す必要がある関係で、電極
面積、すなわち感光面積が外側の光電変換素子列のそれ
より低下するという問題が生じる。However, in order to perform color separation in the sub-scanning direction, it is necessary to form at least three photoelectric conversion element rows close to each other, which increases the convexity of the arrangement of the lead wiring from the metal electrode, making it difficult to manufacture the image sensor. becomes difficult, and a decrease in yield becomes unavoidable. In addition, in the inner photoelectric conversion element array, it is necessary to pass lead wiring for the outer photoelectric conversion element array between adjacent elements, so that the electrode area, that is, the photosensitive area, is smaller than that of the outer photoelectric conversion element array. A problem arises in that it is lower than that of the element array.
本発明の目的は解像度が高く、また基板上の配線密度の
増大や、感光面積の不均一のないカラーイメージセンサ
を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a color image sensor that has high resolution and is free from increased wiring density on a substrate and non-uniformity in photosensitive area.
本発明に係るカラーイメージセンサは、透明基板の第1
の面上に所定の色光に感応する少なくとも1列の光電変
換素子列を形成し、第2の面上に′第1の面上の光電変
換素子列が感応する色光と異なる色光にそれぞれ感応す
る少なくとも2列の光電変換素子列を第1の面上の光電
変換素子列に隣接させて形成してなり、第1および第2
の面のいずれか一方の側を光入射面とすることを特徴と
している。The color image sensor according to the present invention has a transparent substrate.
At least one row of photoelectric conversion elements sensitive to a predetermined color light is formed on the second surface, and each row of photoelectric conversion elements sensitive to color light different from the color light to which the photoelectric conversion element rows on the first surface are sensitive is formed on the second surface. At least two rows of photoelectric conversion elements are formed adjacent to the row of photoelectric conversion elements on the first surface, and the first and second rows are formed adjacent to the photoelectric conversion element row on the first surface.
It is characterized in that either one of the surfaces is used as a light entrance surface.
ここで、光電変換素子列は例えばアモルファス半導体膜
を金属電極と透明電極とで挟んで構成される。この場合
、第1および第2の面上のアモルファス半導体膜を少な
くとも光入射面側と反対側の面上の光電変換素子列領域
に対応した位置で重なるように形成し、かつ光入射面側
のアモルファス半導体膜の禁制帯幅を光入射面と反対側
のアモルファス半導体膜の禁制帯幅より大きくして、光
入射面側のアモルファス半導体膜を透過した波長の光を
光入射面側と反対側のアモルファス半導体膜によって吸
収する構成とすれば、第1の面上の光電変換素子列が感
応する色光と第2の光電変換素子列が感応する色光とを
分離することができる。Here, the photoelectric conversion element array is constructed by sandwiching, for example, an amorphous semiconductor film between a metal electrode and a transparent electrode. In this case, the amorphous semiconductor films on the first and second surfaces are formed so as to overlap at least at a position corresponding to the photoelectric conversion element array region on the surface opposite to the light incidence surface, and By making the forbidden band width of the amorphous semiconductor film larger than the forbidden band width of the amorphous semiconductor film on the side opposite to the light incidence surface, the light of the wavelength transmitted through the amorphous semiconductor film on the side of the light incidence surface is transferred to the side opposite to the light incidence surface. If the amorphous semiconductor film absorbs the light, it is possible to separate the colored light to which the photoelectric conversion element array on the first surface is sensitive and the colored light to which the second photoelectric conversion element array is sensitive.
従って、カラーフィルタとして第2の面上の少なくとも
2列の光電変換素子列が感応する色光を分離するカラー
フィルタを付加することにより、カラー画像の読取りの
ための少な(とも3色の色分離を行なうことが可能であ
る。Therefore, by adding a color filter that separates the colored light to which at least two rows of photoelectric conversion element rows on the second surface are sensitive, it is possible to separate the color light (both three colors) for reading a color image. It is possible to do so.
本発明によれば、透明基板の両面を利用して各色光に感
応する少なくとも3列の光電変換素子列を形成するため
、従来のような不都合を伴わずにカラー画像の読取りを
行なうことができる。According to the present invention, since at least three rows of photoelectric conversion elements sensitive to each color light are formed using both sides of a transparent substrate, color images can be read without the inconveniences of the conventional method. .
すなわち、本発明では各色光に感応する光電変換素子列
が平行に並んだ形となるため、色分離は光電変換素子列
の配列方向と直交する方向においてなされることになり
、解像度は単色画像を読取る場合と変わらない。また、
基板の第1および第2の面のいずれにおいても光電変換
素子列は1列または2列でよいため、光電変換素子列の
素子毎に分割された個別電極からの引出し配線の密度は
特に増加しない。さらに、個別電極からの引出し配線を
光電変換素子列の素子と素子の間を通す必要もないので
、個別電極の電極面積、すなわち実質的な感光面積の均
一化を図ることができ、結果的に画像読取り出力から原
画像について可視記録等を行なった場合、色再現性の良
好なカラー画像を得ることが可能となる。That is, in the present invention, since the photoelectric conversion element arrays sensitive to each color light are arranged in parallel, color separation is performed in a direction perpendicular to the arrangement direction of the photoelectric conversion element arrays, and the resolution is higher than that of a monochromatic image. It's no different than when reading. Also,
Since there may be one or two rows of photoelectric conversion element rows on both the first and second surfaces of the substrate, the density of lead wiring from individual electrodes divided for each element of the photoelectric conversion element row does not particularly increase. . Furthermore, since there is no need to run the lead wiring from the individual electrodes between the elements of the photoelectric conversion element array, it is possible to equalize the electrode area of the individual electrodes, that is, the substantial photosensitive area, and as a result, When visual recording or the like is performed on the original image from the image reading output, it is possible to obtain a color image with good color reproducibility.
第1図は本発明の第1の実施例のカラーイメージセンサ
の構成を示すもので、(”a )は平面図、(b)はA
−A断面図である。FIG. 1 shows the configuration of a color image sensor according to the first embodiment of the present invention, in which (a) is a plan view and (b) is a plan view.
-A sectional view.
図において、透明基板10は例えばガラス基板であり、
その第1の面10a上に第1の光電変換素子列11が形
成され、第2の面10b上に第2および第3の光電変換
素子列12.13が形成されている。In the figure, the transparent substrate 10 is, for example, a glass substrate,
A first photoelectric conversion element array 11 is formed on the first surface 10a, and second and third photoelectric conversion element arrays 12, 13 are formed on the second surface 10b.
第1の光電変換素子列11は、透明基板10の第1の面
10a上に形成され各素子毎に主走査方向に分割形成さ
れた個別電極としてのCr等からなる金R電極14と、
その上に第1〜第3の光電変換素子列11〜13の領域
に対応する位置に一様に形成された水素化アモルファス
シリコン膜15と、このアモルファスシリコン膜15上
の第1の光電変換素子列11の領域に対応する位置に帯
状に選択形成された共通電極としてのITO等による透
明電極16とからなっている。The first photoelectric conversion element array 11 includes gold R electrodes 14 made of Cr or the like as individual electrodes formed on the first surface 10a of the transparent substrate 10 and divided in the main scanning direction for each element;
Thereon, a hydrogenated amorphous silicon film 15 is uniformly formed at positions corresponding to the regions of the first to third photoelectric conversion element rows 11 to 13, and a first photoelectric conversion element on this amorphous silicon film 15 is formed. It consists of a transparent electrode 16 made of ITO or the like as a common electrode selectively formed in a band shape at a position corresponding to the area of the row 11.
なお、アモルファスシリコン膜14上にはさらに透明電
極16の両側に隣接して、すなわち第2および第3の光
電変換素子列12.13の領域に対応する位置に、帯状
のカラーフィルタ17.18が形成されている。Furthermore, on the amorphous silicon film 14, strip-shaped color filters 17.18 are further disposed adjacent to both sides of the transparent electrode 16, that is, at positions corresponding to the areas of the second and third photoelectric conversion element rows 12.13. It is formed.
一方、第2および第3の光電変換素子列12゜13は、
それぞれ透明基板10の第2の面10b上に第1の光電
変換素子列11における金属電極14の両側に位置して
、各素子毎に主走査方向に分割形成された個別電極とし
てのITO等による透明電極19.20と、その上に形
成されたアモルファスシリコン膜21と、このアモルフ
ァスシリコン[121上の第1および第2の光電変換素
子列12.13の領域に対応した位置に帯状に選択形成
された共通電極としてのCr等による金属電極22.2
3からなっている。On the other hand, the second and third photoelectric conversion element arrays 12°13 are
ITO or the like is used as individual electrodes that are located on both sides of the metal electrodes 14 in the first photoelectric conversion element array 11 on the second surface 10b of the transparent substrate 10 and are formed separately in the main scanning direction for each element. The transparent electrode 19.20, the amorphous silicon film 21 formed thereon, and the amorphous silicon film 121 are selectively formed in a band shape at positions corresponding to the regions of the first and second photoelectric conversion element rows 12.13. Metal electrode 22.2 made of Cr or the like as a common electrode
It consists of 3.
ここで、透明基板1oの第1の面10aが原稿面からの
反射光等の光の入射側であり、この光入射面側にあるア
モルファスシリコン膜15は例えばCが混入されてa−
8i:C:Hliとなっており、一方、光入射面と反対
側のアモルファスシリコン11!21は例えばGeが混
入されることによってa−8i :Ge :)−1膜と
なっている。この場合、a−8i:C:H膜15および
a−8i:Ge:H膜21の禁制帯幅はそれぞれ第2図
(a)(b)に示すようになり、前者の方が大きくなる
。すなわち、第3図(a)に示す入射光αからa−3i
:C: Hllll 5で比較的高エネルギーのフォト
ン、すなわち第3図(b)に示すように短波長側の光(
青色光)βを吸収し、その透過光Yをa−8(:Ge
: HII21で吸収するようにする。但し光入射側に
おいては、第213よび第3の光電変換素子列12.1
3の領域に対応した位置にカラーフィルタ17.18が
設けられているため、a−5i:Ge:H1121は実
際にはa−3i:Q:)l膜15の透過光γのうち、第
3図(C)に示すようにカラーフィルタ17.18で分
離された緑色光δ。Here, the first surface 10a of the transparent substrate 1o is the incident side of light such as reflected light from the document surface, and the amorphous silicon film 15 on this light incident surface side is made of a-
8i:C:Hli, and on the other hand, the amorphous silicon 11!21 on the opposite side to the light incident surface becomes an a-8i:Ge:)-1 film by mixing Ge, for example. In this case, the forbidden band widths of the a-8i:C:H film 15 and the a-8i:Ge:H film 21 become as shown in FIGS. 2(a) and 2(b), respectively, with the former being larger. That is, from the incident light α shown in FIG. 3(a) to a-3i
:C: Hllll 5 is a relatively high energy photon, that is, light on the short wavelength side (as shown in Figure 3(b)).
absorbs blue light) β and transmits the transmitted light Y to a-8 (:Ge
: Make it absorb with HII21. However, on the light incidence side, the 213rd and third photoelectric conversion element arrays 12.1
Since the color filters 17 and 18 are provided at positions corresponding to the regions 3 and 3, the a-5i:Ge:H 1121 is actually the third region of the transmitted light γ of the a-3i:Q:)l film 15. Green light δ separated by color filters 17 and 18 as shown in Figure (C).
赤色光εを吸収することになる。It will absorb red light ε.
このようにして、第1の光電変換素子列11によって青
色光に対応した画像出力を、第2の光電変換素子列12
によって緑色光に対応した画像出力を、また第3の光電
変換素子列13によって赤色光に対応した画像出力をそ
れぞれ得ることができる。なお、これらの画像出力はそ
れぞれ金属電極14.透明電極19.20から引出し配
置14a (14b)、19a、20aを介して取出さ
れる。In this way, the image output corresponding to blue light is transmitted by the first photoelectric conversion element array 11 to the second photoelectric conversion element array 12.
By this, an image output corresponding to green light can be obtained, and by the third photoelectric conversion element array 13, an image output corresponding to red light can be obtained. Note that these image outputs are produced by the metal electrode 14. It is taken out from the transparent electrode 19.20 via the drawer arrangement 14a (14b), 19a, 20a.
この実施例によれば、図から明らかなように第1の光電
変換素子列11における個別電極である金jI電極14
.第2および第3の光電変換素子列12.13における
個別電極である透明電極19゜2oのいずれも、電極の
配列密度は個別電極を一列配列した単色画像の読取りの
場合と同様でよいので、解像度の劣化はない。また、引
出し配線14a、14b、19a、20aの密度も単色
画像の読取りの場合と同程度であり、個別電極が高密度
になっても製造上の問題は特にない。さらに、各電極1
4,19.20の面積を等しくすることができるので、
色バランスの良い画1m !5!取り出力が得られる。According to this embodiment, as is clear from the figure, the gold jI electrodes 14, which are the individual electrodes in the first photoelectric conversion element array 11,
.. For both of the transparent electrodes 19°2o, which are individual electrodes in the second and third photoelectric conversion element rows 12.13, the arrangement density of the electrodes may be the same as in the case of reading a monochromatic image in which individual electrodes are arranged in one row. There is no deterioration in resolution. Furthermore, the density of the lead wires 14a, 14b, 19a, and 20a is also about the same as in the case of reading a monochrome image, and there is no particular problem in manufacturing even if the density of the individual electrodes is increased. Furthermore, each electrode 1
Since the areas of 4, 19.20 can be made equal,
1m picture with good color balance! 5! output is obtained.
上記実施例では、光入射面側のアモルファスシリコン1
115が第1〜第3の光電変換素子列11〜13の全領
域をカバーする範囲に設けられているが、第1の光電変
換素子列11の領域に対応する位置、すなわち図で透明
電極16の直下のみに形成されていてもよい。しかし、
一般的に光入射面側のアモルファスシリコン膜15で必
要十分な光の吸収を行なえば、このアモルファスシリコ
ンff1l15が光照射面と反対側のアモルファスシリ
コン1II21へ入射する光の遮蔽となることはないの
で、アモルファスシリコン[115は第1図に示した通
りに形成されていても問題はない。In the above embodiment, the amorphous silicon 1 on the light incident surface side
115 is provided in a range that covers the entire area of the first to third photoelectric conversion element arrays 11 to 13, but the transparent electrode 16 is provided at a position corresponding to the area of the first photoelectric conversion element array 11, that is, in the figure. It may be formed only directly below. but,
Generally, if the amorphous silicon film 15 on the light incident surface side absorbs the necessary and sufficient amount of light, this amorphous silicon ff1l15 will not block the light that enters the amorphous silicon 1II21 on the opposite side to the light irradiation surface. , amorphous silicon [115] may be formed as shown in FIG. 1 without any problem.
第4図は本発明の第2の実施例を示すもので、第1図に
おける透明電極16の上にカラーフィルタ41(前述の
説明に従えば青色光透過フィルタを用いる)を形成して
色分離をより確実に行なうようにしたものである。また
、この実施例では第1図における金3電極22.23を
共通にしてアモルファスシリコン膜21上のほぼ全面に
Cr等による金属電極42を形成している。FIG. 4 shows a second embodiment of the present invention, in which a color filter 41 (according to the above explanation, a blue light transmitting filter is used) is formed on the transparent electrode 16 in FIG. 1 for color separation. This is done more reliably. Further, in this embodiment, the three gold electrodes 22 and 23 in FIG. 1 are used in common, and a metal electrode 42 made of Cr or the like is formed almost entirely on the amorphous silicon film 21.
第5図に示す第3の実施例は、透明基板10のうち2つ
の光電変換素子列12.13が形成された方の面である
第2の面10b側を光入射面としたものである。すなわ
ち、透明基板10の第1の面10a上に形成される第1
の光電変換素子列11における個別電極をITO等によ
る透明電極51とし、アモルファスシリコン膜52を第
1の実施例における第2および第3の光電変換素子列1
2.13で用いられていたのと同様の吸収特性を有する
例えばa−8i :Qe :)l膜とし、また共通電極
をCr等による金属電極53としている。In the third embodiment shown in FIG. 5, the second surface 10b side, which is the surface on which the two photoelectric conversion element rows 12 and 13 of the transparent substrate 10 are formed, is used as the light incident surface. . That is, the first layer formed on the first surface 10a of the transparent substrate 10
The individual electrodes in the photoelectric conversion element rows 11 are made of transparent electrodes 51 made of ITO or the like, and the amorphous silicon film 52 is used as the individual electrodes in the second and third photoelectric conversion element rows 1 in the first embodiment.
For example, an a-8i :Qe :)l film having absorption characteristics similar to those used in 2.13 is used, and the common electrode is a metal electrode 53 made of Cr or the like.
一方、第2の面10b上に形成される第2および第3の
光電変換素子列12.13においてはアモルファスシリ
コン膜54を第1図の実施例における第1の光電変換素
子列11で用いられていたと同様な吸収特性を有する例
えばa−3i:C:H膜とし、このアモルファスシリコ
ン膜54上のほぼ全面に共通電極としてのITO等によ
る透明電極55を形成している。そして、この透明電極
55上の第2および第3の光電変換素子列12゜13の
領域に対応した位置にカラーフィルタ56゜57を形成
し、さらに好ましくは色分離をより確実にするため第1
の光電変換素子列11.の領域にと同様の効果が得られ
ることは明らかである。On the other hand, in the second and third photoelectric conversion element arrays 12.13 formed on the second surface 10b, the amorphous silicon film 54 is used in the first photoelectric conversion element array 11 in the embodiment of FIG. A transparent electrode 55 made of ITO or the like is formed as a common electrode on almost the entire surface of this amorphous silicon film 54. Then, color filters 56 and 57 are formed on the transparent electrode 55 at positions corresponding to the areas of the second and third photoelectric conversion element rows 12 and 13, and more preferably, in order to ensure color separation,
Photoelectric conversion element array 11. It is clear that similar effects can be obtained in the area of
なお、第5図におけるアモルファスシリコン膜52のう
ち第2および第3の光電変換素子列12゜13の領域に
対応した位置、すなわちカラーフィルタ56.57の下
側の部分はなくともよい。Note that the amorphous silicon film 52 in FIG. 5 does not need to have a position corresponding to the area of the second and third photoelectric conversion element rows 12.degree. 13, that is, a portion below the color filters 56 and 57.
第6図に示す第4の実施例は、透明基板10の第2の面
10b上に形成される透明電極61を共通電極とし、ま
た金属電極62.63を個別電極としたものである。な
お、透明電極61は図では第2および第3の光電変換素
子列12.13で共通であるが、両者間で分離されてい
ても構わない。In the fourth embodiment shown in FIG. 6, a transparent electrode 61 formed on the second surface 10b of a transparent substrate 10 is used as a common electrode, and metal electrodes 62 and 63 are used as individual electrodes. Note that although the transparent electrode 61 is common to the second and third photoelectric conversion element arrays 12 and 13 in the figure, it may be separated between them.
また、アモルファスシリコン膜21も第1の光電変換素
子11の領域に対応する部分が除去されていてもよい。Furthermore, a portion of the amorphous silicon film 21 corresponding to the region of the first photoelectric conversion element 11 may be removed.
これらの実施例によっても先と同様の効果が得られる。These embodiments also provide the same effects as described above.
以上、本発明の実施例をいくつか説明したが、本発明は
これらに限定されるものではなく、透明基板の両面にそ
れぞれ異なる色光に感応する光電変換素子列を少なくと
も合計で3列近接させて形成する、という本発明の要旨
を逸脱しない範囲で種々変形実施することができる。例
えば3つの色光に感応する光電変換素子列に加えて白色
光に感応する光電変換素子列を追加し、透明基板の両面
に2列ずつ、計4列の光電変換素子列を形成してもよい
。Although several embodiments of the present invention have been described above, the present invention is not limited thereto, and includes a total of at least three rows of photoelectric conversion elements each sensitive to different colored light arranged close to each other on both sides of a transparent substrate. Various modifications can be made without departing from the gist of the present invention. For example, in addition to the photoelectric conversion element arrays sensitive to three colored lights, a photoelectric conversion element array sensitive to white light may be added to form a total of four photoelectric conversion element arrays, two rows on each side of the transparent substrate. .
また、実施例ではアモルファスシリコン膜の感光不可領
域(例えば引出し配線に対向する領域)を遮光する手段
(シャドウマスク)が省略されているが、これらは適宜
設けることができる。なお、光入射面側に形成される光
電変換素子列におけるCr等による金属電極の引出し配
線の形状を工夫して、例えば光入射面と反対側に形成さ
れる光電変換素子列における個別電極の引出し配線と重
なるように形成したり、あるいは他の感光不可領域に対
向した位置に形成することによって、シャドウマスク形
成工程を省略あるいは簡略化することもできる。Further, in the embodiment, a means (shadow mask) for shielding the non-photosensitive region of the amorphous silicon film (for example, a region facing the lead wiring) from light is omitted, but these can be provided as appropriate. In addition, by devising the shape of the lead wiring of the metal electrode made of Cr or the like in the photoelectric conversion element array formed on the light incidence surface side, for example, the individual electrodes in the photoelectric conversion element array formed on the opposite side to the light incidence surface can be drawn out. The step of forming a shadow mask can be omitted or simplified by forming it so as to overlap with the wiring or by forming it at a position facing another area that cannot be exposed to light.
第1図(a)(b)は本発明の第1の実施例に係るカラ
ーイメージセンサの平面図およびA−A断面図、第2図
(a)(b)は同実施例における光入射側およびそれと
反対側の面上のアモルファスシリコン膜の禁制帯幅の関
係を示す図、第3図(a)〜(C)は同実施例における
アモルファスシリコン膜およびカラーフィルタの分光特
性を説明するための図、第4図(a)(b)は本発明の
第2の実施例に係るカラーイメージセンサの平面図およ
び8−8断面図、第5図および第6図は本発明の第3お
よび第4の実施例に係るカラーイメージセンサの断面図
である。
10・・・透明基板、10a、10b・・・第1.第2
の面、11〜13・・・第1〜第3の光電変換素子列、
14.22.23.42.53.62.63・・・金a
電極、15.21.52.54・・・アモルファスシリ
コン膜、16.19,20.52.55.61・・・透
明電極、17.18.41.56.57゜58・・・カ
ラーフィルり。
出願人代理人 弁理士 鈴江武彦
第2図
(α)(b)
第3!″
第4図FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along line A-A of a color image sensor according to a first embodiment of the present invention, and FIGS. 2(a) and 2(b) are light incident sides of the same embodiment. FIGS. 3(a) to 3(C) are diagrams showing the relationship between the forbidden band width of the amorphous silicon film on the opposite surface and the relationship between the forbidden band width of the amorphous silicon film on the opposite surface. 4(a) and 4(b) are a plan view and a sectional view taken along line 8-8 of a color image sensor according to a second embodiment of the present invention, and FIGS. 4 is a cross-sectional view of a color image sensor according to Example 4. FIG. 10...Transparent substrate, 10a, 10b...1st. Second
11 to 13...first to third photoelectric conversion element rows,
14.22.23.42.53.62.63... Gold a
Electrode, 15.21.52.54...Amorphous silicon film, 16.19,20.52.55.61...Transparent electrode, 17.18.41.56.57゜58...Color filler . Applicant's agent Patent attorney Takehiko Suzue Figure 2 (α) (b) 3rd! ″ Figure 4
Claims (9)
なくとも1列の光電変換素子列を形成し、第2の面上に
第1の面上の光電変換素子列が感応する色光と異なる色
光にそれぞれ感応する少なくとも2列の光電変換素子列
を第1の面上の光電変換素子列に隣接させて形成してな
り、第1および第2の面のいずれか一方の側を光入射面
とすることを特徴とするカラーイメージセンサ。(1) At least one row of photoelectric conversion elements sensitive to predetermined colored light is formed on the first surface of the transparent substrate, and colored light to which the photoelectric conversion element rows on the first surface are sensitive is formed on the second surface. At least two rows of photoelectric conversion elements each sensitive to light of a different color are formed adjacent to the row of photoelectric conversion elements on the first surface, and either one of the first and second surfaces is exposed to light. A color image sensor characterized by having an incident surface.
極と透明電極とで挟んで構成されたものであることを特
徴とする特許請求の範囲第1項記載のカラーイメージセ
ンサ。(2) The color image sensor according to claim 1, wherein the photoelectric conversion element array is constructed by sandwiching an amorphous semiconductor film between a metal electrode and a transparent electrode.
少なくとも光入射面側と反対側の面上の光電変換素子列
領域に対応した位置で重なるように形成し、かつ光入射
面側のアモルファス半導体膜の禁制帯幅を光入射面と反
対側のアモルファス半導体膜の禁制帯幅より大きくする
ことにより、光入射面側のアモルファス半導体膜を透過
した波長の光を光入射面と反対側のアモルファス半導体
膜によって吸収するようにしたことを特徴とする特許請
求の範囲第2項記載のカラーイメージセンサ。(3) The amorphous semiconductor films on the first and second surfaces are formed so as to overlap at least at a position corresponding to the photoelectric conversion element array region on the surface opposite to the light incidence surface side, and By making the forbidden band width of the amorphous semiconductor film larger than the forbidden band width of the amorphous semiconductor film on the side opposite to the light incidence surface, the light of the wavelength that has passed through the amorphous semiconductor film on the side of the light incidence surface can be transferred to the side opposite to the light incidence surface. 3. The color image sensor according to claim 2, wherein the color image sensor absorbs the light through an amorphous semiconductor film.
域に対応した位置に選択形成された金属電極、第1およ
び第2の面上の光電変換素子列領域に対応した位置に形
成されたアモルファス半導体膜、該アモルファス半導体
膜の第1の面上の光電変換素子列領域に対応した位置に
選択形成された透明電極および第2の面上の光電変換素
子領域に対応する位置にそれぞれ選択形成され互いに異
なる色光を透過させるカラーフィルタを順次積層し、第
2の面上に、該第2の面上の光電変換素子列領域に対応
した位置に選択形成された透明電極、少なくとも第2の
面上の光電変換素子列領域に対応した位置に形成された
アモルファス半導体膜、少なくとも第1および第2の面
上の光電変換素子列領域に対応した位置に形成された金
属電極を順次積層し、第1の面側を光入射面とすること
を特徴とする特許請求の範囲第1項、第2項または第3
項記載のカラーイメージセンサ。(4) A metal electrode selectively formed on the first surface at a position corresponding to the photoelectric conversion element array area on the first surface, corresponding to the photoelectric conversion element array area on the first and second surfaces. an amorphous semiconductor film formed at a position corresponding to the photoelectric conversion element array area on the first surface of the amorphous semiconductor film, a transparent electrode selectively formed at a position corresponding to the photoelectric conversion element array area on the first surface of the amorphous semiconductor film, and a transparent electrode corresponding to the photoelectric conversion element array area on the second surface of the amorphous semiconductor film. color filters that are selectively formed at the respective positions and transmit mutually different color light are sequentially laminated, and transparent electrodes are selectively formed on the second surface at positions corresponding to the photoelectric conversion element array areas on the second surface. , an amorphous semiconductor film formed at a position corresponding to the photoelectric conversion element array region on at least the second surface, and a metal electrode formed at a position corresponding to the photoelectric conversion element array region on at least the first and second surfaces. Claims 1, 2, or 3 are characterized in that they are sequentially laminated, and the first surface side is the light incident surface.
Color image sensor described in section.
面上のアモルファス半導体膜上に形成されたカラーフィ
ルタが透過させる色光と異なる色光を透過させるカラー
フィルタを形成したことを特徴とする特許請求の範囲第
4項記載のカラーイメージセンサ。(5) A color filter is formed on the transparent electrode formed on the first surface to transmit a color light different from that transmitted by the color filter formed on the amorphous semiconductor film on the first surface. A color image sensor according to claim 4, characterized in that:
域に対応した位置に選択形成された透明電極、少なくと
も第1の面上の光電変換素子列領域に対応した位置に形
成されたアモルファス半導体膜、第1の面上の光電変換
素子列領域に対応した位置に選択形成された金属電極を
順次積層し、第2の面上に、該第2の面上の光電変換素
子列領域に対応する位置に選択形成された金属電極、第
1および第2の面上の光電変換素子列領域に対応する位
置に形成されたアモルファス半導体膜、該アモルファス
半導体膜の少なくとも第2の面上の光電変換素子列領域
に対応した位置にそれぞれ形成されそれぞれ異なる色光
を透過させるカラーフィルタを順次積層し、第2の面側
を光入射面とすることを特徴とする特許請求の範囲第1
項、第2項または第3項記載のカラーイメージセンサ。(6) A transparent electrode selectively formed on the first surface at a position corresponding to the photoelectric conversion element array area on the first surface, at least a position corresponding to the photoelectric conversion element array area on the first surface. The amorphous semiconductor film formed on the first surface is sequentially laminated with metal electrodes selectively formed at positions corresponding to the photoelectric conversion element array region on the first surface, and the photoelectric conversion element array region on the second surface is sequentially laminated. a metal electrode selectively formed at a position corresponding to the conversion element array region; an amorphous semiconductor film formed at a position corresponding to the photoelectric conversion element array region on the first and second surfaces; and at least a second semiconductor film of the amorphous semiconductor film. Claims characterized in that color filters formed at positions corresponding to the photoelectric conversion element row regions on the surface and transmitting different colored light are sequentially stacked, and the second surface side is the light incident surface. 1st
2. The color image sensor according to item 2, item 3, or item 3.
域に対応した位置に選択形成された金属電極、第1およ
び第2の面上の光電変換素子列領域に対応した位置に形
成されたアモルファス半導体膜、該アモルファス半導体
膜の第1の面上の光電変換素子列領域に対応した位置に
選択形成された透明電極および第2の面上の光電変換素
子領域に対応する位置にそれぞれ選択形成され互いに異
なる色光を透過させるカラーフィルタを順次積層し、第
2の面上に、少なくとも第2の面上の光電変換素子列領
域に対応した位置に形成された透明電極、少なくとも第
2の面上の光電変換素子列領域に対応した位置に形成さ
れたアモルファス半導体膜、第2の面上の光電変換素子
列領域に対応した位置に選択形成された金属電極を順次
積層し、第1の面側を光入射面とすることを特徴とする
特許請求の範囲第1項、第2項または第3項記載のカラ
ーイメージセンサ。(7) A metal electrode selectively formed on the first surface at a position corresponding to the photoelectric conversion element array area on the first surface, corresponding to the photoelectric conversion element array area on the first and second surfaces. an amorphous semiconductor film formed at a position corresponding to the photoelectric conversion element array area on the first surface of the amorphous semiconductor film, a transparent electrode selectively formed at a position corresponding to the photoelectric conversion element array area on the first surface of the amorphous semiconductor film, and a transparent electrode corresponding to the photoelectric conversion element array area on the second surface of the amorphous semiconductor film. a transparent electrode formed on the second surface at least at a position corresponding to the photoelectric conversion element array area on the second surface; An amorphous semiconductor film formed at a position corresponding to the photoelectric conversion element array region on at least the second surface and a metal electrode selectively formed at a position corresponding to the photoelectric conversion element array region on the second surface are sequentially laminated. The color image sensor according to claim 1, 2 or 3, wherein the first surface side is a light incident surface.
ルファス半導体膜上に形成されたカラーフィルタが透過
させる色光と異なる色光を透過させるカラーフィルタを
形成したことを特徴とする特許請求の範囲第7項記載の
カラーイメージセンサ。(8) A color filter is formed on the transparent electrode on the first surface to transmit a color light different from that transmitted by the color filter formed on the amorphous semiconductor film on the first surface. A color image sensor according to claim 7.
形成された金属電極の引出し配線を、光入射側と反対側
の面上に形成されたアモルファス半導体膜の感光不可領
域を遮光するように形成したことを特徴とする特許請求
の範囲第2項、第3項、第4項、第5項、第6項、第7
項または第8項記載のカラーイメージセンサ。(9) The lead wiring of the metal electrode formed on the light incident side of the first and second surfaces cannot be exposed to the amorphous semiconductor film formed on the surface opposite to the light incident side. Claims 2, 3, 4, 5, 6, and 7 are characterized in that the area is formed to block light.
9. The color image sensor according to item 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59204889A JPS6182468A (en) | 1984-09-29 | 1984-09-29 | Color image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59204889A JPS6182468A (en) | 1984-09-29 | 1984-09-29 | Color image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6182468A true JPS6182468A (en) | 1986-04-26 |
JPH0374037B2 JPH0374037B2 (en) | 1991-11-25 |
Family
ID=16498072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59204889A Granted JPS6182468A (en) | 1984-09-29 | 1984-09-29 | Color image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6182468A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63283158A (en) * | 1987-05-15 | 1988-11-21 | Nec Corp | Contact type image sensor for colour |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58225667A (en) * | 1982-06-23 | 1983-12-27 | Hitachi Ltd | Optoelectric converter |
-
1984
- 1984-09-29 JP JP59204889A patent/JPS6182468A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58225667A (en) * | 1982-06-23 | 1983-12-27 | Hitachi Ltd | Optoelectric converter |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63283158A (en) * | 1987-05-15 | 1988-11-21 | Nec Corp | Contact type image sensor for colour |
Also Published As
Publication number | Publication date |
---|---|
JPH0374037B2 (en) | 1991-11-25 |
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