Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co LtdfiledCriticalTokyo Shibaura Electric Co Ltd
Priority to JP23282082ApriorityCriticalpatent/JPS59121190A/ja
Publication of JPS59121190ApublicationCriticalpatent/JPS59121190A/ja
Publication of JPS618040B2publicationCriticalpatent/JPS618040B2/ja
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
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Chemical & Material Sciences
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Engineering & Computer Science
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Crystallography & Structural Chemistry
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Materials Engineering
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Metallurgy
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Organic Chemistry
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Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
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