JPS6177694A - Preparation of single crystal having uniform composition - Google Patents

Preparation of single crystal having uniform composition

Info

Publication number
JPS6177694A
JPS6177694A JP59196549A JP19654984A JPS6177694A JP S6177694 A JPS6177694 A JP S6177694A JP 59196549 A JP59196549 A JP 59196549A JP 19654984 A JP19654984 A JP 19654984A JP S6177694 A JPS6177694 A JP S6177694A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
crucible
compsn
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59196549A
Other languages
Japanese (ja)
Inventor
Koichi Onodera
小野寺 晃一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP59196549A priority Critical patent/JPS6177694A/en
Publication of JPS6177694A publication Critical patent/JPS6177694A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)

Abstract

PURPOSE:To obtain a single crystal having uniform compsn. over its whole length of crystal growth by replenishing continuously raw materials for the solid crystal having different compsn. from the foot of the single crystal to a coagulating grown single crystal by heating a crucible filled with a seed crystal and raw material for the solid crystal. CONSTITUTION:A crucible filled with a seed crystal and materials for a solid crystal is heated while changing continuously the relative position of the crucible to a heating device. A single crystal having a long size and uniform compsn. is obtd. by replenishing the material having different compsn. to the initially filled material continuously to a single crystal coagulated from the melt in the crucible. For example, by 0-5mol% Fe2O3 is reduced and by 0-5mol% MnO2 is increased, and by 0-5mol% ZnO is reduced preferably in a compsn. for the material for solid crystal to be replenished from the compsn. of the filled material for the solid crystal in the prepn. of an Mn-Zn ferrite single crystal.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は種結晶と固体結晶原料が充填されたるつぼに固
体結晶原料を連続的に補給しながら均一な組成を有する
長尺の単結晶の製造方法に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention is a method for producing long single crystals having a uniform composition while continuously replenishing a crucible filled with seed crystals and solid crystal raw materials. Regarding the manufacturing method.

〔従来の技術〕[Conventional technology]

従来、長尺の単結晶は種結晶と固体結晶原料を加熱装置
で加熱されたるつぼ内に充填し、これらの原材料を溶融
させて所定の温度分布で加熱装置とるつぼとの相対的位
置関係が変わるように加熱しながらるつぼを下方に移動
させ、るつぼ底部に単結晶を成長させる。初期の単結晶
が成長した後、結晶の成長とともにるつぼの上方よシ粉
末状、顆粒状またはペレット状の同じ組成の固体結晶原
料を単位時間当り一定量ずつ連続的に補給しながらるつ
ぼを下方に移動させ長尺の大形単結晶を得ている。
Conventionally, long single crystals are produced by filling seed crystals and solid crystal raw materials into a crucible heated by a heating device, melting these raw materials, and adjusting the relative positional relationship between the heating device and the crucible at a predetermined temperature distribution. The crucible is moved downward while being heated at different speeds, and a single crystal is grown at the bottom of the crucible. After the initial single crystal grows, as the crystal grows, the crucible is moved upwards and downwards while continuously replenishing solid crystal raw materials of the same composition in the form of powder, granules, or pellets at a constant rate per unit time. By moving the crystal, we obtained a long and large single crystal.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来、長尺の単結晶を得るとき連続的に下方に移動中の
るつぼ内に同種の固体結晶原料を単位時間当シ一定量補
給し溶融させているが、結晶の長手方向に組成偏析を生
じ、全体にわたシ均一な組成の単結晶素材が得られず均
一部を選択するため高価となる欠点がある。
Conventionally, when obtaining a long single crystal, a fixed amount of the same type of solid crystal raw material is supplied and melted per unit time in a crucible that is continuously moving downward, but this results in compositional segregation in the longitudinal direction of the crystal. However, it is difficult to obtain a single crystal material with a uniform composition throughout, and a uniform portion must be selected, which has the disadvantage of being expensive.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は従来のかかる欠点を除き9種結晶と固体結晶原
料を充填させ加熱し下方から凝固する成長した単結晶に
連続的に組成の異る固体結晶原料を補給し、全長にわた
り均一な組成の単結晶を得る製造方法である。
The present invention eliminates such drawbacks of the conventional method by continuously supplying solid crystal raw materials of different compositions to a grown single crystal that is filled with nine seed crystals and a solid crystal raw material, heated, and solidified from below, thereby achieving a uniform composition over the entire length. This is a manufacturing method for obtaining single crystals.

〔実施例〕〔Example〕

本発明の実施例を一般に磁気ヘッドコア材として広く用
いられているMn−Znフェライト単結晶の例について
説明する。まず酸化鉄u’ezos)50.0mo1%
、酸化マンガン(MnO) 30.0mo1%、酸化亜
鉛(ZnO) 20.0mo1%の割合で組成したフェ
ライト原料を白金ロンラム製るつぼ内に投入し。
Embodiments of the present invention will be described using an example of Mn--Zn ferrite single crystal, which is generally widely used as a magnetic head core material. First, iron oxide u'ezos) 50.0mo1%
A ferrite raw material composed of 30.0 mo1% of manganese oxide (MnO) and 20.0 mo1% of zinc oxide (ZnO) was put into a platinum Ronram crucible.

加熱装置で加熱溶融し、完全に溶融した後、加熱装置に
対しるつぼを降下させ、単結晶の育成が進み、液相があ
る範囲になったとき組成比の異なる単結晶原料を補給原
料として補給する。
After heating and melting in a heating device and completely melting, the crucible is lowered to the heating device, and when the growth of the single crystal progresses and the liquid phase reaches a certain range, single crystal raw materials with different composition ratios are supplied as supplementary raw materials. do.

ここで補給される補給原料は酸化鉄u’e2o3)51
mo1%、酸化マンガン(MnO) 28.5mol%
、酸化亜鉛(ZnO) 20.5mol%の組成とする
顆粒状であり、連続的に単位時間一定量補給される。こ
の結果は第1図のように製品の長さ〔閣〕に対する各組
成の組成(mol % )は従来に比べて均一化が見ら
れ、特に初期の段階に著しい効果がある。
The supplementary raw material supplied here is iron oxide u'e2o3)51
mo1%, manganese oxide (MnO) 28.5mol%
Zinc oxide (ZnO) is in the form of granules with a composition of 20.5 mol %, and is continuously replenished in a fixed amount per unit time. As shown in FIG. 1, this result shows that the composition (mol %) of each component relative to the length of the product is more uniform than before, and this is particularly effective in the initial stage.

〔発明の効果〕〔Effect of the invention〕

以上に述べたように本発明によれば、全長にわたり組成
の均一な長尺の単結晶が得られ、一つの単結晶から得ら
れる所望の組成を有する単結晶素材の割合を高め原価の
低減をはかることができる。
As described above, according to the present invention, a long single crystal with a uniform composition over the entire length can be obtained, and the proportion of single crystal material having a desired composition obtained from one single crystal can be increased, reducing the cost. It can be measured.

【図面の簡単な説明】[Brief explanation of drawings]

Claims (1)

【特許請求の範囲】 1、種結晶と固体結晶原料が充填されたるつぼを加熱装
置との相対位置関係を連続して変化させ加熱し、前記る
つぼ内で溶融凝固した単結晶に前記固体結晶原料を連続
的に補給する単結晶製造方法において、前記充填された
固体結晶原料と補給用固体結晶原料との組成を異にする
ことを特徴とする長尺の均一な組成の単結晶製造方法。 2、前記充填された固体結晶原料の組成と前記補給用固
体結晶原料の組成との割合をFeO_3を0〜5mol
%少く、MnOを0〜5mol%多く、ZnOを0〜5
mol%少くするMn−Znフェライト単結晶に関する
特許請求の範囲第1項記載の均一な組成の単結晶製造方
法。
[Claims] 1. A crucible filled with a seed crystal and a solid crystal raw material is heated by continuously changing the relative positional relationship with a heating device, and the solid crystal raw material is melted and solidified in the single crystal in the crucible. A method for producing a long single crystal with a uniform composition, characterized in that the filled solid crystal raw material and the replenishing solid crystal raw material have different compositions. 2. The ratio of the composition of the filled solid crystal raw material and the composition of the supplementary solid crystal raw material is set to 0 to 5 mol of FeO_3.
% less, MnO more than 0-5 mol%, ZnO 0-5 mol%
A method for producing a single crystal with a uniform composition according to claim 1, which relates to a Mn-Zn ferrite single crystal whose mol% is reduced.
JP59196549A 1984-09-21 1984-09-21 Preparation of single crystal having uniform composition Pending JPS6177694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59196549A JPS6177694A (en) 1984-09-21 1984-09-21 Preparation of single crystal having uniform composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59196549A JPS6177694A (en) 1984-09-21 1984-09-21 Preparation of single crystal having uniform composition

Publications (1)

Publication Number Publication Date
JPS6177694A true JPS6177694A (en) 1986-04-21

Family

ID=16359583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59196549A Pending JPS6177694A (en) 1984-09-21 1984-09-21 Preparation of single crystal having uniform composition

Country Status (1)

Country Link
JP (1) JPS6177694A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148390A (en) * 1985-12-19 1987-07-02 Sanyo Electric Co Ltd Method for growing single crystal
US5650008A (en) * 1995-12-01 1997-07-22 Advanced Materials Processing, Llc Method for preparing homogeneous bridgman-type single crystals
JP2010143782A (en) * 2008-12-18 2010-07-01 Shinshu Univ Melt composition control unidirectional solidification crystal growth apparatus and crystal growth method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148390A (en) * 1985-12-19 1987-07-02 Sanyo Electric Co Ltd Method for growing single crystal
US5650008A (en) * 1995-12-01 1997-07-22 Advanced Materials Processing, Llc Method for preparing homogeneous bridgman-type single crystals
JP2010143782A (en) * 2008-12-18 2010-07-01 Shinshu Univ Melt composition control unidirectional solidification crystal growth apparatus and crystal growth method

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