JPS617748B2 - - Google Patents
Info
- Publication number
- JPS617748B2 JPS617748B2 JP50109940A JP10994075A JPS617748B2 JP S617748 B2 JPS617748 B2 JP S617748B2 JP 50109940 A JP50109940 A JP 50109940A JP 10994075 A JP10994075 A JP 10994075A JP S617748 B2 JPS617748 B2 JP S617748B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50109940A JPS5234680A (en) | 1975-09-12 | 1975-09-12 | Integrated circuit |
| GB3759676A GB1542481A (en) | 1975-09-12 | 1976-09-10 | Integrated circuit device |
| US05/917,176 US4143391A (en) | 1975-09-12 | 1978-06-20 | Integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50109940A JPS5234680A (en) | 1975-09-12 | 1975-09-12 | Integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5234680A JPS5234680A (en) | 1977-03-16 |
| JPS617748B2 true JPS617748B2 (de) | 1986-03-08 |
Family
ID=14522956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50109940A Granted JPS5234680A (en) | 1975-09-12 | 1975-09-12 | Integrated circuit |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5234680A (de) |
| GB (1) | GB1542481A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
| JPS5618469A (en) * | 1979-07-24 | 1981-02-21 | Fujitsu Ltd | Semiconductor device |
| JPS60231356A (ja) * | 1984-04-28 | 1985-11-16 | Mitsubishi Electric Corp | 相補形金属酸化膜半導体集積回路装置 |
| EP0166386A3 (de) * | 1984-06-29 | 1987-08-05 | Siemens Aktiengesellschaft | Integrierte Schaltung in komplementärer Schaltungstechnik |
| GB2171249A (en) * | 1985-02-14 | 1986-08-20 | Siliconix Ltd | Improved monolithic integrated circuits |
-
1975
- 1975-09-12 JP JP50109940A patent/JPS5234680A/ja active Granted
-
1976
- 1976-09-10 GB GB3759676A patent/GB1542481A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5234680A (en) | 1977-03-16 |
| GB1542481A (en) | 1979-03-21 |