JPS6177360A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6177360A JPS6177360A JP59198812A JP19881284A JPS6177360A JP S6177360 A JPS6177360 A JP S6177360A JP 59198812 A JP59198812 A JP 59198812A JP 19881284 A JP19881284 A JP 19881284A JP S6177360 A JPS6177360 A JP S6177360A
- Authority
- JP
- Japan
- Prior art keywords
- diodes
- diode
- substrate
- ccd11
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 238000001444 catalytic combustion detection Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に係り、特にダイオードアレイと電
荷結合素子（Ｃｈａｒｇｅ Ｃｏｕｐｐｌｅｄ Ｄｅｖ
ｉｃｅ。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a diode array and a charge coupled device.
ice.
以下ＣＣＤと記す）からなるハイブリッド型赤外線検出
器のブルーミングを防止するようにした半導体装置に関
する。The present invention relates to a semiconductor device that prevents blooming of a hybrid infrared detector (hereinafter referred to as CCD).
近年、光照射によって生じたＰＮ結合付近の小数キャリ
アがＰＮ接合部を横切って光電流を生ずるダイオードは
広く利用され、特に■−■属化金化合物いた発光ダイオ
ードや半導体レーザが実用化され近赤外域あるいは赤外
域に高い感度を持つ光検出器が期待されている。In recent years, diodes in which minority carriers near the PN junction generated by light irradiation cross the PN junction and generate a photocurrent have been widely used, and in particular, light-emitting diodes and semiconductor lasers with ■-■ metal compounds have been put into practical use, and near-infrared Photodetectors with high sensitivity in the outer or infrared region are expected.
一方、シリコン基板上に絶縁層を設けて該絶縁層上に伝
導性の電極を一列に並べて２相または３和動作するよう
にしたＳｉ −ＣＣＤも撮像計算機メモリ等に多く利用
されている。On the other hand, Si-CCDs in which an insulating layer is provided on a silicon substrate and conductive electrodes are arranged in a line on the insulating layer to perform two-phase or ternary operation are also widely used in imaging computer memories and the like.
本発明では赤外線検出装置を構成するダイオードアレイ
とＳｔ −ＣＣＤをハイブリッド化してダイオードアレ
イで入力光量に比例した量の電子を発生させＳｔ −Ｃ
ＯＤマルチプレクサのポテンシャル井戸内に電荷を蓄積
するようにした半導体装置を提供するにある。In the present invention, a diode array constituting an infrared detection device and a St-CCD are hybridized, and the diode array generates an amount of electrons proportional to the amount of input light.
An object of the present invention is to provide a semiconductor device in which charge is accumulated in a potential well of an OD multiplexer.
上述の如きハイブリッド化されたダイオードアレイとＳ
ｉ −ＣＣＤからなる半導体装置の従来の一実施例を第
４図について説明する。Hybridized diode array as described above and S
A conventional example of a semiconductor device comprising an i-CCD will be described with reference to FIG.
第４図において、１は通常のＰＮ接合よりなるダイオー
ドで赤外線検出器を構成していて実際には基板上にダイ
オードアレイの型で形成されている。２は上記基板とは
異なるＳｉ基板上に形成されたＣＯＤであり、入出力部
３．４感光体にたとえばΦ１．Φ２．φ３の３相クロツ
クの与えられるクロック電極５を有する。６はＣＯＤの
出力端子であり赤外線検出器１はＣＯＤからバイアスさ
れている。上記構成において赤外線検出器１に入射した
光をＣＣＤ２のポテンシャル井戸内に蓄積して行く場合
に赤外線検出器を構成しているダイオードに多量の過剰
光が照射されると、該ダイオードで発生した多量の電荷
がＣ０Ｄ２の入力に与えられ、ブルーミングが発生して
出力端子６に連なる撮像系の特性を著しく阻害する欠点
がある。In FIG. 4, reference numeral 1 denotes a diode made of an ordinary PN junction, which constitutes an infrared detector, and is actually formed in the form of a diode array on a substrate. 2 is a COD formed on a Si substrate different from the above substrate, and the input/output section 3.4 has a photoreceptor, for example, Φ1. Φ2. It has a clock electrode 5 to which a three-phase clock of φ3 is applied. 6 is an output terminal of the COD, and the infrared detector 1 is biased from the COD. In the above configuration, when the light incident on the infrared detector 1 is accumulated in the potential well of the CCD 2, if a large amount of excess light is irradiated to the diode making up the infrared detector, a large amount of light generated in the diode charge is applied to the input of C0D2, causing blooming, which has the drawback of significantly impairing the characteristics of the imaging system connected to the output terminal 6.
〔発明が解決しようとする問題点）
このような欠点を除くために従来では図示しないがＣＧ
’Ｄ内に過剰電荷を捨て去るためのブルーミング防止回
路を付加することが行われていた。[Problems to be solved by the invention] In order to eliminate such drawbacks, although not shown in the conventional art, CG
A blooming prevention circuit was added to the 'D to discard excess charge.
しかしＣＣＤ２内に一体化してこれら回路を形成するた
めのスペースは極めて小さく、その形成が極めて困難で
ある欠点を有する。However, the space for forming these circuits integrally within the CCD 2 is extremely small, and the disadvantage is that it is extremely difficult to form them.
本発明は上記問題点を解消した半導体装置を提供するも
ので、その手段は、第１の基板に形成されたダイオード
群と、第２の基板に形成されたマルチプレクサ電荷結合
素子とをハイブリッド化した赤外線検出装置において、
上記ダイオード群は検出しようとする波長のバンドギャ
ップを有する第１のダイオードと該第１のダイオードの
バンドギャップより広いバンドギャップの第２のダイオ
ードを直列接続した４、Ｍのエピタキシャル層からなる
ことを特徴とする半導体装置によってなされる。The present invention provides a semiconductor device that solves the above-mentioned problems, and its means include hybridizing a group of diodes formed on a first substrate and a multiplexer charge-coupled device formed on a second substrate. In an infrared detection device,
The above diode group consists of 4.M epitaxial layers in which a first diode having a bandgap of the wavelength to be detected and a second diode having a bandgap wider than the first diode are connected in series. This is achieved using a semiconductor device having the following characteristics.
上記第１および第２のダイオードの直列接続はＣＯＤに
より逆バイアスを受け、上記第１のダイオードに蓄積さ
れたキャリアによって第１および第２に掛っている逆バ
イアス電圧を弱める光バイアス電圧を発生させるように
したものである。The series connection of the first and second diodes is reverse biased by the COD, and the carriers accumulated in the first diode generate an optical bias voltage that weakens the reverse bias voltage applied to the first and second diodes. This is how it was done.
以下１図面を参照して本発明の実施例を詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to one drawing.
第１図は本発明の模式的構成を示す図であり。FIG. 1 is a diagram showing a schematic configuration of the present invention.
７は赤外光で８は赤外光７を透過する基板で、該基板の
下面にインジウム・燐（ＩｎＰ）からなるＰＮ接合の第
２のダイオード９，９．・・・をエピタキシャル成長さ
せ該第２のダイオード９上に第１のダイオード１０をエ
ピタキシャル成長させる。Reference numeral 7 denotes a substrate that transmits infrared light, and 8 a substrate that transmits the infrared light 7. On the bottom surface of the substrate are second diodes 9, 9 . ... is epitaxially grown, and the first diode 10 is epitaxially grown on the second diode 9.
すなわち第１のダイオードはインジウム・ガリウム・ヒ
素・燐（ＴｎＧａＡｓＰ）からなるＰＮ接合を形成する
。これらＩｎＰおよびＩｎＧａＡｓＰからなる直列ダイ
オードを基板８にアレイ状に複数配設する。That is, the first diode forms a PN junction made of indium-gallium-arsenic-phosphorus (TnGaAsP). A plurality of series diodes made of InP and InGaAsP are arranged in an array on the substrate 8.
１１は５ｉ−ＣＣＤマルチプレクサでダイオードからの
電子を並列〜直列変換するものであり、該ＣｃＤ１１の
Ｎ“領域１２，１２． ・・・に第１のダイオード１
０のＮ領域を接続し、第２のダイオード９．９・・・の
Ｐ領域を共通接続しＣＣＤ１１のＰ−領域１３と接続し
てヘテロ構成よりなるＮ−Ｐ−Ｎ−ＰダイオードはＣＣ
Ｄ１１の入力５一
部より逆バイアスを受けている。11 is a 5i-CCD multiplexer that converts electrons from diodes from parallel to series, and a first diode 1 is connected to the N'' region 12, 12, . . . of the CcD 11.
0, the P regions of the second diodes 9, 9... are commonly connected, and the P-region 13 of the CCD 11 is connected to form a heterostructure N-P-N-P diode.
It receives a reverse bias from part of the input 5 of D11.
上記構成における動作を第２図のＰ−Ｎ−Ｐ。The operation in the above configuration is shown in PNP of FIG.
Ｎ接合の、エネルギー帯図によって説明する。This will be explained using an energy band diagram of an N junction.
第２図で１４は伝導帯、１５は禁制帯、１６は価電子帯
、１７ａ、１７ｂ、１７ｃはそれぞれ空乏層を示し、
ＩｎＰのＰＮ接合でエピタキシャル成長された第２の
ダイオード９のバンドギャップはＩｎＧａＡｓＰのＰＮ
接合でエピタキシャル成長した第１のダイオードよりも
広いために基板８を通過した赤外光７は第２のダイオー
ド９部分を通過して赤外線領域の波長のバンドギャップ
に設計されたＩｎＧａＡｓＰのＰ−Ｎ接合で吸収され、
電子１８はＰ−Ｎ接合を介しＣＣＤ１１へ流入するが正
孔１９はＰ −ＩｎＡｓＰ ｉｉｔ内に蓄積される。こ
れは、Ｐ−ＩｎＧａＡｓＰ ｉｉの両側に形成された空
乏Ｆｉ＃１７ａ。In FIG. 2, 14 is a conduction band, 15 is a forbidden band, 16 is a valence band, and 17a, 17b, and 17c are depletion layers, respectively.
The band gap of the second diode 9 epitaxially grown with the PN junction of InP is that of the PN junction of InGaAsP.
Since the junction is wider than the first diode that is epitaxially grown, the infrared light 7 that passes through the substrate 8 passes through the second diode 9, and the InGaAsP P-N junction is designed to have a bandgap of wavelength in the infrared region. is absorbed by
Electrons 18 flow into the CCD 11 via the PN junction, but holes 19 are accumulated in the P-InAsP iit. This is a depletion Fi#17a formed on both sides of P-InGaAsP ii.
１７ｂによってポテンシャルの井戸が形成されているた
めに正孔は蓄積される。この正孔はＣＣＤ１１の逆方向
バイアスをキャンセルするような順バイアスする方向に
動作する。すなわち赤外光が過剰に入射されるとその分
圧孔がＰ −ＩｎＧａＡｓＰ眉６一
に多く蓄積されて順バイアス値を高めて逆方向バイアス
を弱めることになる。Since a potential well is formed by 17b, holes are accumulated. These holes operate in a forward bias direction that cancels the reverse bias of the CCD 11. In other words, when an excessive amount of infrared light is incident, a large amount of the partial pressure hole is accumulated in the P-InGaAsP eyebrow 61, increasing the forward bias value and weakening the reverse bias.
第３図は上記した動作の効果を説明するためのＰＮ接合
の電流−電圧特性を示すものであり２曲線２３はたとえ
ば赤外光が通常の光量で第１のダイオードに照射された
場合の電流−電圧特性曲線で２０で示す点をバイアス点
とする。いま、赤外検出器の第１のダイオード１０に入
射される赤外光が過剰になって上記第１のダイオードで
検出される電子が多くなってＣＣＤ内にあふれるような
光電流の増加２１があると、電流−電圧特性は曲線２４
で示す如くなるが、符号２２で示す分だけ自己バイアス
によって電流が減少しバイアス点は見掛は上２５位置に
来ることになる。FIG. 3 shows the current-voltage characteristics of the PN junction to explain the effect of the above-mentioned operation, and curve 23 shows the current when the first diode is irradiated with a normal amount of infrared light, for example. - The point indicated by 20 on the voltage characteristic curve is the bias point. Now, the infrared light incident on the first diode 10 of the infrared detector becomes excessive, and the number of electrons detected by the first diode increases, causing an increase in photocurrent 21 that overflows into the CCD. If there is, the current-voltage characteristic will be curve 24
As shown, the current decreases due to the self-bias by an amount indicated by 22, and the bias point appears to be at the upper 25 position.
上記実施例では光電変換装置の赤外線検出器をＰ−Ｎ−
Ｐ−Ｎ接合で構成したＩｎＰとＩｎＧａＡｓＰでエピタ
キシャル成長させたがＰｂ、 Ｓｎｘ Ｔｅ、 ｌ１ｇ
＋−ｘＣｄｘＴｅ等で形成してＸ値を変化させてバンド
構造をコントロールするようにしてもよい。In the above embodiment, the infrared detector of the photoelectric conversion device is
Epitaxial growth was performed using InP and InGaAsP composed of P-N junctions, but Pb, Snx Te, l1g
It may be formed of +-xCdxTe, etc., and the band structure may be controlled by changing the X value.
本発明は上述の如く構成し、かつ動作するので過剰な光
電流を抑えることができるのでプルーミングの発生を防
止でき、光電流の増減に応じて順方向バイアスを自動的
に制御できる。またブルーミング防止回路をＣＯＤに設
ける必要がないためにＣＯＤの回路パターンを簡略化で
きる効果を有する。Since the present invention is constructed and operated as described above, excessive photocurrent can be suppressed, thereby preventing the occurrence of pluming, and forward bias can be automatically controlled in accordance with increases and decreases in photocurrent. Further, since there is no need to provide a blooming prevention circuit in the COD, there is an effect that the circuit pattern of the COD can be simplified.
第１図は本発明の半導体装置の模式図、第２図は本発明
の半導体装置の原理を説明するためのエネルギー帯図、
第３図は本発明の半導体装置の効果を説明するための電
流−電圧特性図、第４図は従来の半導体装置の路線的構
成図である。
１・・・ＰＮ接合ダイオード等の赤外線検出器。
２．１１・・・ＣＣＤ、 ３・・・入力部。
４・・・出力部、 ５・・・クロック電極。
７・・・赤外光、 ８・・・基板、 ９゜
１０・・・第２及び第１のダイオード。
１２・・・ｎ＋領領域 １３・・・Ｐ＋領域。
１４・・・伝導帯、 １５・・・禁制帯。
１６・・・価電子帯、 １７ａ、１７ｂ。
１７Ｃ・・・空乏層、 １８・・・電子。
１９・・・正孔。FIG. 1 is a schematic diagram of the semiconductor device of the present invention, and FIG. 2 is an energy band diagram for explaining the principle of the semiconductor device of the present invention.
FIG. 3 is a current-voltage characteristic diagram for explaining the effects of the semiconductor device of the present invention, and FIG. 4 is a schematic diagram of the conventional semiconductor device. 1...Infrared detector such as PN junction diode. 2.11...CCD, 3...Input section. 4... Output part, 5... Clock electrode. 7... Infrared light, 8... Substrate, 9°10... Second and first diodes. 12...n+ area 13...P+ area. 14... Conduction band, 15... Forbidden band. 16...Valence band, 17a, 17b. 17C...depletion layer, 18...electron. 19...hole.
Claims (1)
に形成されたマルチプレクサ電荷結合素子とをハイブリ
ッド化した赤外線検出装置において、上記ダイオード群
は検出しようとする波長のバンドギャップを有する第１
のダイオードと該第１のダイオードのバンドギャップよ
り広いバンドギャップの第２のダイオードを直列接続し
た４層のエピタキシャル層からなることを特徴とする半
導体装置。In an infrared detection device that is a hybrid of a group of diodes formed on a first substrate and a multiplexer charge-coupled device formed on a second substrate, the group of diodes has a bandgap of a wavelength to be detected.
1. A semiconductor device comprising four epitaxial layers in which a diode and a second diode having a bandgap wider than that of the first diode are connected in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198812A JPS6177360A (en) | 1984-09-21 | 1984-09-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198812A JPS6177360A (en) | 1984-09-21 | 1984-09-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6177360A true JPS6177360A (en) | 1986-04-19 |
Family
ID=16397317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59198812A Pending JPS6177360A (en) | 1984-09-21 | 1984-09-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177360A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0353665A2 (en) * | 1988-07-30 | 1990-02-07 | Sony Corporation | CCD imager |
| JPH11354762A (en) * | 1998-06-03 | 1999-12-24 | Nippon Telegr & Teleph Corp <Ntt> | Image sensor |
-
1984
- 1984-09-21 JP JP59198812A patent/JPS6177360A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0353665A2 (en) * | 1988-07-30 | 1990-02-07 | Sony Corporation | CCD imager |
| JPH11354762A (en) * | 1998-06-03 | 1999-12-24 | Nippon Telegr & Teleph Corp <Ntt> | Image sensor |
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