JPS6169961A - Nozzle for apparatus for manufacturing thin film by atomization - Google Patents

Nozzle for apparatus for manufacturing thin film by atomization

Info

Publication number
JPS6169961A
JPS6169961A JP59192332A JP19233284A JPS6169961A JP S6169961 A JPS6169961 A JP S6169961A JP 59192332 A JP59192332 A JP 59192332A JP 19233284 A JP19233284 A JP 19233284A JP S6169961 A JPS6169961 A JP S6169961A
Authority
JP
Japan
Prior art keywords
nozzle
thin film
filter
substrate
mist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59192332A
Other languages
Japanese (ja)
Other versions
JPH0247540B2 (en
Inventor
Yutaka Hayashi
豊 林
Atsuo Ito
厚雄 伊藤
Hideyo Iida
英世 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Taiyo Yuden Co Ltd
Original Assignee
Agency of Industrial Science and Technology
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Taiyo Yuden Co Ltd filed Critical Agency of Industrial Science and Technology
Priority to JP59192332A priority Critical patent/JPS6169961A/en
Priority to FR8513281A priority patent/FR2569999B1/en
Priority to AU47383/85A priority patent/AU572345B2/en
Publication of JPS6169961A publication Critical patent/JPS6169961A/en
Publication of JPH0247540B2 publication Critical patent/JPH0247540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/25Oxides by deposition from the liquid phase
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1291Process of deposition of the inorganic material by heating of the substrate
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/229Non-specific enumeration
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/11Deposition methods from solutions or suspensions
    • C03C2218/112Deposition methods from solutions or suspensions by spraying
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/07Hoods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Nozzles (AREA)

Abstract

PURPOSE:To eject a uniformly atomized soln. of starting material by placing a filter having many through holes between a hole for introducing an atomized soln. of starting material and a hole for ejecting the soln. CONSTITUTION:A filter 14 for mist diffusion having many through holes is placed between a hole 13 for introducing mist of a soln. of starting material into a nozzle head 12 from a duct 11 and the ejecting hole 10 of the nozzle head 12. A spongy substance having through holes whose directions are irregular, a bundle of many slender glass pipes, finely latticed thin plates or the like is used as the filter 14. By this nozzle structure, a uniform thin film can be manufactured on the surface of a substrate.

Description

【発明の詳細な説明】 〔産業上の利用分野) この発明は、霧化した原料溶液を加熱された基板に吹き
付け、その表面に5n02.In2O3、TiO2、S
 i02等の薄膜を作製する装置において、基板に霧状
の原料溶液を吹き付けるのに使用されるノズルに関する
Detailed Description of the Invention [Industrial Application Field] This invention sprays an atomized raw material solution onto a heated substrate to form a 5n02. In2O3, TiO2, S
This invention relates to a nozzle used to spray atomized raw material solution onto a substrate in an apparatus for producing thin films such as i02.

〔従来の技術〕[Conventional technology]

この種の霧化薄膜作製装置の°構成を第5図により説明
すると9反応室1の中に表面(薄膜を作製する側の面を
いう、以下同じ)を下方へ向けて基板2.2−が設置さ
れ、これらが背面側からヒータ3によって400〜50
0℃に加熱される。図示の場合、これら基板2.2−・
−は2図中布から左側へと送られていく。基板2.2−
の下位には、霧化器4と給気器5が備えられ、霧化器4
に連結されたノズル6が基板2.2−へ向けて設置され
ている。
The configuration of this type of atomized thin film production apparatus will be explained with reference to FIG. 5. The substrate 2.2- are installed, and these are heated by heater 3 from the back side to 400 to 50
Heated to 0°C. In the case shown, these substrates 2.2-.
- is sent from the cloth to the left side in Figure 2. Substrate 2.2-
An atomizer 4 and an air supply device 5 are provided below the atomizer 4.
A nozzle 6 connected to is placed towards the substrate 2.2-.

原料溶液には、Sn、In等の塩化物溶液が使用され、
これが霧化器4において霧化され。
A chloride solution of Sn, In, etc. is used as the raw material solution,
This is atomized in the atomizer 4.

給気器5に備えたファン9によってノズル6から基板2
,2−・・の表面に緩やかに吹き付けられる。霧状の原
料溶液は、その一部が基板2,2・・−の表面付近で加
熱されることによって脱水されると共に気化され、かつ
空気中の酸素や水蒸気と反応して基板2.2−の表面に
Sn、Inの酸化物等からなる薄膜が作製される。
A fan 9 provided in the air supply device 5 removes air from the nozzle 6 to the substrate 2.
, 2-... are sprayed gently onto the surface. A part of the mist-like raw material solution is heated near the surface of the substrates 2, 2...- to be dehydrated and vaporized, and reacts with oxygen and water vapor in the air to form the substrate 2.2- A thin film made of oxides of Sn, In, etc. is formed on the surface of the substrate.

従来における霧化薄膜作製装置では、第5図で示すよう
なノズル6が使用されている。このノズル6は、霧化器
4側に連結された導管11の先端に漏斗状のノズルヘッ
ド12が連結されたもので、同ヘッド12の先端が基板
2,2・・・−より幅の広い矩形の吐出口10となって
いる。
In a conventional atomized thin film production apparatus, a nozzle 6 as shown in FIG. 5 is used. This nozzle 6 has a funnel-shaped nozzle head 12 connected to the tip of a conduit 11 connected to the atomizer 4 side, and the tip of the head 12 is wider than the substrates 2, 2... The discharge port 10 is rectangular.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところが、上記ノズル6において、導管11の流路面積
に比べて吐出口10の開口面積が広い場合は、同吐出口
10から吐出される霧の流速が導管11の延長部で特に
速くなり、これから離れるに従って次第に遅くなるとい
うように、その流れに不均一な状態が生じる。そうする
と、基板2.2−の表面に作製される薄膜にも、この流
速に対応した膜厚等の不均一が生じ、均一な状態の薄膜
が作製されにくいという問題を生じる。
However, in the nozzle 6, if the opening area of the discharge port 10 is wider than the flow path area of the conduit 11, the flow velocity of the mist discharged from the discharge port 10 will be particularly high at the extended portion of the conduit 11, and from now on The flow becomes non-uniform, as it gradually slows down as it moves away. In this case, the thin film formed on the surface of the substrate 2.2- also has non-uniformity in film thickness corresponding to this flow rate, causing a problem that it is difficult to form a uniform thin film.

この発明は、従来のノズル6における上記の問題を解消
すべくなされたものであって、ノズル6の吐出口10か
らはソ゛均一に霧が吐出されるようになし、これによっ
て基板2.2−・に均一な状態の薄膜が形成されるよう
にしたものである。
The present invention has been made to solve the above-mentioned problems with the conventional nozzle 6, and the mist is discharged from the discharge port 10 of the nozzle 6 so uniformly that the substrate 2.2-・A thin film with a uniform state is formed.

〔問題を解決するための手段〕[Means to solve the problem]

以下、この発明の構成を第1図〜第3図で示した各実施
例に基づき、説明すると、この発明は、ノズルヘソ・ド
12への導管11から霧が導入される導入口13と吐出
口10との間に、多数の通孔を有する霧拡散用のフィル
タ14を設けたものである。
Hereinafter, the configuration of the present invention will be explained based on the embodiments shown in FIGS. A mist diffusion filter 14 having a large number of holes is provided between the filter 10 and the filter 10 .

このフィルタ14としては、多数の通孔を有する多孔質
体が使用されるが、第1図では1通孔の方向が不規則な
海綿状の−ものが使用されている。これに対して、第2
図のものでは、細いガラス管を多数束ねたもの、薄い板
を細かく格子状に組んだもの、あるいはハニカム状に組
んだもの等1通孔が一定の方向性を持った多孔質体から
なっている。さらに第3図では9通孔の方向が不規則な
多孔質体と9通孔が方向性を持った多孔質体とを重ね合
わせ、後者を吐出口10側に配置したものである。
A porous body having a large number of holes is used as the filter 14, and in FIG. 1, a spongy body with one hole in an irregular direction is used. On the other hand, the second
The one shown in the figure is made of a porous material with each hole having a certain direction, such as a bundle of thin glass tubes, a fine lattice of thin plates, or a honeycomb. There is. Furthermore, in FIG. 3, a porous body with nine pores in an irregular direction and a porous body with nine pores in a directional manner are superimposed, and the latter is placed on the discharge port 10 side.

〔作 用〕[For production]

導管11からノズル6へと送られた霧は、導管11に比
べて流路断面積が広いノズルヘッド12において流速が
低下し、一旦フィルタ14の手前で停滞し、そこに充満
する。しかる後、これがフィルタ14の通孔11から吐
出口10へと流れ出るため、霧が同吐出口10から均一
な状態で緩やかに吐出される。これによって基板2.2
・−の表面にはノズルへラド12の幅方向に沿ってはり
均一な量の原料溶液が供給され、均一な厚さの薄膜が作
製される。
The mist sent from the conduit 11 to the nozzle 6 has a flow rate reduced in the nozzle head 12, which has a wider cross-sectional area than the conduit 11, and temporarily stagnates in front of the filter 14, where it is filled. Thereafter, the mist flows out from the through hole 11 of the filter 14 to the discharge port 10, so that the mist is uniformly and gently discharged from the discharge port 10. This allows the board 2.2
A uniform amount of the raw material solution is supplied to the surface of the nozzle along the width direction of the Rad 12, and a thin film of uniform thickness is produced.

なお、方向性の無い通孔を持つ第1図で示すようなフィ
ルタ14は、一般に霧の拡散作用が高い反面、霧の流量
抵抗が高く、吐出口10から吐出される霧の方向性が一
定しないという特性を持つ。これに対して1通孔が方向
性を持った第2図で示すようなフィルタ14では、一般
に霧の拡散作用が比較的低いが、逆に流量抵抗が低く。
Note that the filter 14 as shown in FIG. 1, which has holes without directionality, generally has a high mist diffusion effect, but has a high mist flow resistance, and the directionality of the mist discharged from the discharge port 10 is constant. It has the characteristic that it does not. On the other hand, a filter 14 as shown in FIG. 2 in which one hole has directionality generally has a relatively low mist diffusion effect, but conversely has a low flow resistance.

吐出される霧の方向性も揃っているという特質を有する
。さらに、これらを2層に重ね合わせた第3図で示すよ
うなフィルタ14では、これらの特質を併せ持った中間
的な性質を有し、特に後者の方向性を持った通孔を有す
る層を吐出口10側に配置した第3図のものでは、吐出
された霧の方向性が良く揃っており、均一な薄膜を作製
しやすい。
It also has the characteristic that the directionality of the ejected mist is uniform. Furthermore, a filter 14 as shown in FIG. 3 in which these two layers are superimposed has an intermediate property that combines these characteristics, and in particular, a layer having holes with the latter directionality is ejected. In the case of the one shown in FIG. 3, which is placed on the outlet 10 side, the directionality of the ejected mist is well aligned, making it easy to produce a uniform thin film.

〔実施例〕〔Example〕

次ぎにこの発明の実施例と比較例について説明する。 Next, examples and comparative examples of the present invention will be described.

(実施例1) 四塩化錫(三水塩)を25g、三酸化アンチモンIg、
塩酸5mlを純水150ccに順次溶解して原料溶液を
作り、霧化器4に入れた。
(Example 1) 25 g of tin tetrachloride (trihydrate), antimony trioxide Ig,
A raw material solution was prepared by sequentially dissolving 5 ml of hydrochloric acid in 150 cc of pure water, and the raw material solution was put into the atomizer 4.

基板2.2−は、厚さ1 、 On+ 、縦横100 
mのガラス基板を用い、これを背面側からヒータ3によ
って加熱した。このときの基板2.2−の表面温度は約
400℃であった。
The substrate 2.2- has a thickness of 1 mm, On+, and 100 mm in length and width.
A glass substrate of No. m was used and heated from the back side with a heater 3. At this time, the surface temperature of the substrate 2.2- was about 400°C.

ノズル6には1幅1201m、縦20龍の吐出口10を
有するものを使用し、このノズルヘッド12に2〜3φ
の表裏に貫通する多数の通孔を有する厚さ20m−のコ
ージライト多孔質磁器(空隙率85%)製のフィルタ1
4を設けた。
The nozzle 6 has a width of 1201 m and a length of 20 long discharge ports 10, and the nozzle head 12 has a diameter of 2 to 3 mm.
A filter 1 made of cordierite porous porcelain (porosity 85%) with a thickness of 20 m and having a large number of holes penetrating the front and back sides of the filter.
4 was established.

基板2.2−を第5図において右から左へと毎分15m
mの速度で送ると共に、霧化器4で毎分1mlの原料液
を霧化し、これを上記ノズル6から基板2,2−・・に
緩やかに吹き付け、その表面に酸化錫の薄膜を作製した
Board 2.2- from right to left in Figure 5 at 15 m/min.
At the same time, the raw material liquid was atomized at a rate of 1 ml per minute by the atomizer 4, and this was gently sprayed from the nozzle 6 onto the substrates 2, 2, etc., to form a thin film of tin oxide on the surface thereof. .

薄膜が作製された基板2.2−の内、一枚を試料lとし
、この表面の第6図においてA−Eで示した各点の膜厚
をそれぞれ測定し、その最大値と最少値の差δmaxを
別表に示した。
One of the substrates 2.2- on which the thin film was fabricated was designated as sample 1, and the film thickness at each point indicated by A-E in Fig. 6 on this surface was measured, and the maximum and minimum values were calculated. The difference δmax is shown in the attached table.

(実施例2) 上記実施例1と同じノズル6に、フィルタ14として内
径2φ、外形3φ、長さ30wnの多数のガラス管を束
ねた多孔質体を取り付け、同実施例と同様にして基板2
,2・−の表面に薄膜を作製した。
(Example 2) A porous body made by bundling a large number of glass tubes with an inner diameter of 2φ, an outer diameter of 3φ, and a length of 30wn is attached as a filter 14 to the same nozzle 6 as in Example 1, and the substrate 2 is
A thin film was fabricated on the surface of ,2.-.

そして同様に一枚の基板2を試料2とし、第6図で示す
A−Eの各点で測定した膜厚の最大と最少の差δmax
を別表に示した。
Similarly, using one substrate 2 as sample 2, the difference δmax between the maximum and minimum film thickness measured at each point A-E shown in FIG.
are shown in the separate table.

(実施例3) 上記実施例1と同じノズル6に、フィルタ14として同
実施例で使用されたものと同じコージライト多孔質磁器
に、−辺が5nの多数の規則正しい通孔を有する厚さ7
0mのハニカム構造の多孔質体を重ねたものを、後者が
吐出口1011Jになるよう取り付け、同実施例と同様
にして基板2.2−の表面に薄膜を作製した。
(Example 3) The same nozzle 6 as in Example 1 above, the same cordierite porous porcelain as that used in the same example as the filter 14, with a thickness of 7 having a large number of regular holes with a -side of 5n.
A stack of porous bodies having a honeycomb structure with a length of 0 m was attached so that the latter became the discharge port 1011J, and a thin film was produced on the surface of the substrate 2.2- in the same manner as in the same example.

そして同様に一枚の基板2を試料3とし、第6図で示す
A−Eの各点で測定した膜厚の最大と最少の差δmax
を別表に示した。
Similarly, using one substrate 2 as sample 3, the difference δmax between the maximum and minimum film thicknesses measured at each point A-E shown in FIG.
are shown in the separate table.

別表 単位(μm) (比較例) 上記実施例1と同じノズル6に、フィルタ14を取り付
けずに、同実施例と同様にして基板2゜2−の表面に薄
膜を作製した。
Appended Table Unit (μm) (Comparative Example) A thin film was produced on the surface of the substrate 2° 2- in the same manner as in Example 1 without attaching the filter 14 to the same nozzle 6 as in Example 1 above.

そして同様に一枚の基板2を比較例とし、第6図で示す
A−Hの各点で測定した膜厚の最大と最少の差δmax
を別表に示した。
Similarly, using one substrate 2 as a comparative example, the difference δmax between the maximum and minimum film thickness measured at each point A-H shown in FIG.
are shown in the separate table.

別表から明らかなように、試料1と3では。As is clear from the attached table, in samples 1 and 3.

0.003μm、試料2では0.014μmといったよ
うに、膜厚のばらつきδmaxが極めて小さいのに対し
、従来のノズルを使用した比較例では。
The film thickness variation δmax is extremely small, such as 0.003 μm and 0.014 μm for sample 2, whereas in the comparative example using a conventional nozzle.

0.180μmといったように比較的大きなばらつきδ
waxが見られた。なおこれらの試料の膜厚は0.34
〜0.38μmであった。
A relatively large variation δ such as 0.180μm
I could see wax. The film thickness of these samples is 0.34
It was ~0.38 μm.

なお、上記実施例は、何れも5n02膜を作製する場合
のものであるが、他の薄膜1例えばIn203.TiO
2、S i02等の薄膜を作製する場合も概ね同様の結
果が得られる。
Note that the above examples are all for the case of producing a 5n02 film, but other thin films 1, such as In203. TiO
2. Approximately similar results can be obtained when producing a thin film such as Si02.

〔発明の効果〕〔Effect of the invention〕

以上説明した通り、この発明によればノズル6の吐出口
10から均一に霧化された原料液を吐出させることがで
きるため、基板2.2−の表面に均一な状態の薄膜を作
製することができるようになる。
As explained above, according to the present invention, the atomized raw material liquid can be uniformly discharged from the discharge port 10 of the nozzle 6, so that a thin film in a uniform state can be produced on the surface of the substrate 2.2-. You will be able to do this.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第3図は、この発明の各実施態様を示すノズル
の一部切欠の斜視図、第4図は、ノズルの従来例を示す
一部切欠の斜視図、第5図は、霧化薄膜作製装置の概略
を示す説明図、第6図は、この発明の実施例における膜
厚測定位置を示す基板の表面図である。 2・一基板        4−霧化器5−給気器  
     6−ノズル 1〇−吐出口       11−導管12−・−ノズ
ルヘッド    13−導入口14− フィルタ 特許出願人 通商産業省工業技術院長 間   上 太陽誘電株式会社 代 理 人 弁理士 北條和由 第5図 第6[!1 x          x 第11!1 第3圀 纂21!21 IP、41!l
1 to 3 are partially cutaway perspective views of a nozzle showing each embodiment of the present invention, FIG. 4 is a partially cutaway perspective view showing a conventional example of a nozzle, and FIG. 5 is a mist FIG. 6, an explanatory diagram showing an outline of the reduced thin film production apparatus, is a surface view of a substrate showing the film thickness measurement position in an embodiment of the present invention. 2. One board 4-Atomizer 5-Air supply device
6-Nozzle 1〇-Discharge port 11-Conduit 12--Nozzle head 13-Inlet 14- Filter patent applicant Director-General of the Agency of Industrial Science and Technology, Ministry of International Trade and Industry 1 Taiyo Yuden Co., Ltd. Representative Patent attorney Kazuyoshi Hojo Figure 5 6th [! 1 x x 11th! 1st 3rd chapter 21! 21 IP, 41! l

Claims (1)

【特許請求の範囲】 1、原料溶液を霧化する霧化器と、霧状の原料溶液をノ
ズルへ送る給気器を備え、基板を表面が下方へ向くよう
設置し、同基板へ向けてその下位にノズルを設置し、基
板を加熱しながらノズルから霧化された原料溶液を同基
板の表面に緩やかに吹き付け、同表面に薄膜を作製する
装置において、霧化器から導管を通って先広がり状のノ
ズルヘッドへ霧が導入される導入口と、同ノズルヘッド
の吐出口との間に、多数の細かい通孔を有する霧拡散用
のフィルタを設けたことを特徴とする霧化薄膜作製装置
用ノズル。 2、フィルタが方向性の不規則な多数の通孔を有する多
孔質体からなる特許請求の範囲第1項記載の霧化薄膜作
製装置用ノズル。 3、フィルタが霧を吐出する方向に並んだ多数の通孔を
有する多孔質体からなる特許請求の範囲第1項記載の霧
化薄膜作製装置用ノズル。 4、フィルタが方向性の不規則な多数の通孔を有する多
孔質体と、霧を吐出する方向に並んだ多数の通孔を有す
る多孔質体との2層体からなり、後者の多孔質体がノズ
ルヘッドの吐出口側に設けられている特許請求の範囲第
1項記載の霧化薄膜作製装置用ノズル。
[Claims] 1. An atomizer that atomizes a raw material solution and an air supply device that sends the atomized raw material solution to a nozzle are provided, and a substrate is installed with its surface facing downward; A nozzle is installed below the substrate, and the atomized raw material solution is gently sprayed from the nozzle onto the surface of the substrate while heating the substrate to form a thin film on the surface. Production of an atomized thin film characterized in that a filter for mist diffusion having a large number of fine holes is provided between an inlet through which mist is introduced into a wide nozzle head and an outlet of the same nozzle head. Nozzle for equipment. 2. The nozzle for an atomized thin film production device according to claim 1, wherein the filter is made of a porous body having a large number of holes with irregular orientation. 3. The nozzle for an atomized thin film production apparatus according to claim 1, which is made of a porous body having a large number of holes arranged in the direction in which the filter discharges mist. 4. The filter consists of two layers: a porous body with a large number of pores with irregular orientation, and a porous body with a large number of pores lined up in the direction in which the mist is discharged; The nozzle for an atomized thin film production apparatus according to claim 1, wherein the body is provided on the discharge port side of the nozzle head.
JP59192332A 1984-09-13 1984-09-13 Nozzle for apparatus for manufacturing thin film by atomization Granted JPS6169961A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59192332A JPS6169961A (en) 1984-09-13 1984-09-13 Nozzle for apparatus for manufacturing thin film by atomization
FR8513281A FR2569999B1 (en) 1984-09-13 1985-09-06 NOZZLE FOR USE IN A THIN FILM FORMING DEVICE
AU47383/85A AU572345B2 (en) 1984-09-13 1985-09-11 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59192332A JPS6169961A (en) 1984-09-13 1984-09-13 Nozzle for apparatus for manufacturing thin film by atomization

Publications (2)

Publication Number Publication Date
JPS6169961A true JPS6169961A (en) 1986-04-10
JPH0247540B2 JPH0247540B2 (en) 1990-10-22

Family

ID=16289520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59192332A Granted JPS6169961A (en) 1984-09-13 1984-09-13 Nozzle for apparatus for manufacturing thin film by atomization

Country Status (3)

Country Link
JP (1) JPS6169961A (en)
AU (1) AU572345B2 (en)
FR (1) FR2569999B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316612U (en) * 1989-06-30 1991-02-19
WO2012124047A1 (en) * 2011-03-15 2012-09-20 東芝三菱電機産業システム株式会社 Film formation device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390578A (en) * 1989-08-31 1991-04-16 Taiyo Yuden Co Ltd Thin film forming device
JPH0390579A (en) * 1989-08-31 1991-04-16 Taiyo Yuden Co Ltd Thin film forming device
US6024090A (en) * 1993-01-29 2000-02-15 Aradigm Corporation Method of treating a diabetic patient by aerosolized administration of insulin lispro

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB667396A (en) * 1949-05-05 1952-02-27 Apv Co Ltd Improvements in or relating to nozzles for liquids
GB1516032A (en) * 1976-04-13 1978-06-28 Bfg Glassgroup Coating of glass
CH643469A5 (en) * 1981-12-22 1984-06-15 Siv Soc Italiana Vetro Installation for continuous drop on the surface of a substrate door high temperature, layer solid matter.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316612U (en) * 1989-06-30 1991-02-19
WO2012124047A1 (en) * 2011-03-15 2012-09-20 東芝三菱電機産業システム株式会社 Film formation device
CN103314134A (en) * 2011-03-15 2013-09-18 东芝三菱电机产业系统株式会社 Film formation device
JP5529340B2 (en) * 2011-03-15 2014-06-25 東芝三菱電機産業システム株式会社 Deposition equipment
KR101454566B1 (en) * 2011-03-15 2014-10-23 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 Film formation device
TWI466731B (en) * 2011-03-15 2015-01-01 Toshiba Mitsubishi Elec Inc Film forming device
US10121931B2 (en) 2011-03-15 2018-11-06 Toshiba Mitsubishi-Electric Industrial Systems Corporation Film formation device

Also Published As

Publication number Publication date
FR2569999B1 (en) 1988-01-08
AU572345B2 (en) 1988-05-05
JPH0247540B2 (en) 1990-10-22
FR2569999A1 (en) 1986-03-14
AU4738385A (en) 1986-03-20

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