JPS6161373B2 - - Google Patents

Description

[Detailed description of the invention]

As described in U.S. Patent Application No. 873,340 (filed January 10, 1978) and US Pat. It is well known as a stripping agent for removal from metallized inorganic supports.
Although such stripping agents effectively remove polymers,
It has a tendency to corrode metals, especially aluminum and titanium, especially when water is present. The above two US applications describe inhibitors that reduce the corrosion rate of metals for stripping agents. The system described in this US application contains fluorides, particularly hydrogen fluoride. It has been found that nitrile compounds reduce the loss of fluoride due to HF vaporization and also improve the corrosion inhibition function of the fluoride. The present invention provides improved organic stripper compositions for removing organic polymers from metalized inorganic supports. This release agent composition has the general formula R-
SO ₂ H (wherein R is alkyl containing 1 to 18 carbon atoms, monohydroxyalkyl containing 1 to 18 carbon atoms, aryl containing 6 to 10 carbon atoms, alkyl group containing 1 to 14 carbon atoms) monoalkylaryl having from 1 to 4 carbon atoms, dialkylaryl having from 1 to 4 carbon atoms, monohydroxyaryl having from 6 to 10 carbon atoms, monoalkylhydroxyaryl having from 7 to 11 carbon atoms, and from 6 to at least one organic sulfonic acid selected from the group consisting of monochlorohydroxyaryl having 10 carbon atoms, at least one organic solvent, optional phenol, and based on the total weight of the composition Approximately 5 to 300ppm
It consists of a series of inhibitors, including fluorides. In this refinement, the inhibitor system has the general formula H-R-
It contains from about 0.01 to about 5% of the total weight of the composition of a CN or NC-R-CN nitrile compound, where R is alkylene, arylene, or alkylarylene. Such nitrile compounds reduce loss of fluoride inhibitor due to HF vaporization and improve inhibition of metal corrosion by fluoride. The organic stripping agent composition of the present invention includes a material containing as a primary stripping agent one or more organic sulfonic acids capable of dissolving and dispersing an organic polymeric material from an inorganic support. Organic sulfonic acids having such properties and useful in the present invention include alkyl-, monohydroxylalkyl-, aryl,
Monoalkylaryl, dialkylaryl, monohydroxyaryl, monoalkyl, hydroxyaryl and monochloro-hydroxyaryl sulfonic acids. Examples of alkyl sulfonic acids are those containing 1 to 18 carbon atoms, preferably such as linear dodecane sulfonic acid and linear decane sulfonic acid.
A straight chain alkyl sulfonic acid containing 10, 12 or 14 carbon atoms. Examples of monohydroxyalkyl sulfonic acids are those containing 1 to 18 carbon atoms, preferably 15 to 18 carbon atoms in a straight or branched chain, such as those prepared by sulfonation of alpha-olefins. This includes: An example is a monohydroxysulfonic acid mixture prepared by sulfonation of 1-octadecene. Examples of arylsulfonic acids containing 6 to 10 carbon atoms are naphthalenesulfonic acid and preferably benzenesulfonic acid. Examples of monoalkylarylsulfonic acids are straight-chain or branched monoalkylarylsulfonic acids of 1 to 14 carbon atoms such as toluenesulfonic acid, cumene-sulfonic acid, decylbenzenesulfonic acid and dodecylbenzenesulfonic acid. It contains an alkyl group. Preferred among the monoalkylaryl sulfonic acids because of their great biodegradability are toluene sulfonic acid (usually the para isomer predominate, but either isomer may be used), linear octyl- , decyl and dodecylbenzene sulfonic acids. Examples of dialkylarylsulfonic acids are those containing two alkyl groups, each preferably straight-chain and of 1 to 4 carbon atoms, the isomers of xylene sulfonic acid and the isomers of methylethylbenzenesulfonic acid. It is a class of bodies. Preferably, isomers of xylene sulfonic acid are used alone or in mixtures. Examples of monohydroxyarylsulfonic acids are 6
Those containing ~10 carbon atoms include naphtholsulfonic acid and phenolsulfonic acid. Preferred sulfonic acids of this group are the ortho- or para-isomeric phenolsulfonic acids alone or in mixtures. Examples of monoalkyl-hydroxyarylsulfonic acids containing 7 to 11 carbon atoms are methylnaphtholsulfonic acid and cresolsulfonic acid. A preferred example is cresol sulfonic acid and all its isomers and mixtures of isomers. Examples of monochloro-hydroxyarylsulfonic acids containing 6 to 10 carbon atoms are chloronaphtholsulfonic acid and chlorophenolsulfonic acid. Preferred from this group are chlorophenolsulfonic acid and all its isomers and mixtures thereof. The compositions of the present invention contain one or more of the organic sulfonic acids described above, but in order to maximize the ability to exfoliate the polymeric organic supports of the present invention, the various R
It is preferable to use a combination of at least two or more types of organic sulfonic acids containing groups. If only one organic sulfonic acid is used, it is preferred to use linear dodecylbenzenesulfonic acid in the composition because it is an excellent stripping agent and is readily available compared to other organic sulfonic acids. This is because the cost is lower than that of acids. 2
When more than one type of organic sulfonic acid is used, it is preferred to use a linear dodecylbenzenesulfonic acid/para-toluenesulfonic acid combination, and when further phenols are used in the composition, linear Preference is given to using phenolsulfonic acid in combination with dodecylbenzenesulfonic acid. Benzenesulfonic acid is also preferred, especially for phenol- and chlorinated hydrocarbon-free compositions. The organic sulfonic acids, used alone or in mixtures, usually amount to about 20 to 80%, preferably about 30 to 60%, by weight of the composition of the invention without the presence of phenols.
present in the composition. If used in combination with a phenol, the sulfonic acid generally accounts for about 5 to 80% by weight of the composition.
Used with phenol consisting of 50wt%.
The balance is primarily solvent. In compositions containing mixtures of sulfonic acids, less than 20 wt% or no solvent is used, as the sulfonic acids comprise more than 80% and even up to 100% of the inhibitor-free composition. Solvents used in the compositions of the invention in the absence of phenols or in combination with phenols are aromatic hydrocarbons containing from 6 to 14 carbon atoms, examples being benzene and naphthalene; dodecane, with an average molecular weight of
aliphatic hydrocarbons containing 6 to 30 carbon atoms, such as mixtures of isoparaffinic hydrocarbons with a boiling point of 150° to 210° C. and 160° to 220° C. and light and heavy mineral oils obtained from the distillation of petroleum; toluene; monoalkyl-substituted aromatic hydrocarbons containing preferably 7 to 20 carbon atoms, preferably linear alkylbenzenes such as ethylbenzene, cumene, octylbenzene, decylbenzene and dodecylbenzene; such as the ortho, meta and para isomers of xylene and diethylbenzene. Dialkylbenzene is preferred 8
Dialkyl-substituted aromatic hydrocarbons containing ~20 carbon atoms; 1,2,3-, 1,2,4- and 1,3,5- of trimethyl and triethylbenzene
Trialkylbenzenes such as isomers are preferred9
Trialkyl-substituted aromatic hydrocarbons containing ~20 carbon atoms; 1-14 carbon atoms and 1-14 such as methylene chloride and tetrachloroethane
Chlorinated aliphatic hydrocarbons containing 1 to 14 chlorine atoms; preferred examples include those containing 2 to 4 carbon atoms and 3 to 4 chlorine atoms, such as trichlorethylene and perchlorethylene (tetrachlorethylene). Chlorinated olefinic hydrocarbons containing 6 to 4 carbon atoms and 1 to 4 chlorine atoms; chlorinated benzenes containing 1 to 3 chlorine atoms, such as ortho-dichlorobenzene and trichlorobenzene, are preferred examples. carbon atoms and 1 to
Chlorinated aromatic hydrocarbons containing 4 chlorine atoms; aliphatic ketones containing 3 to 10 carbon atoms, of which acetone and methyl ethyl ketone and methyl isobutyl ketone are examples; 3 to 10, of which ethoxyethanol and butoxyethanol are examples monoalkyl ethers of ethylene glycol containing 1 to 4 carbon atoms; carboxylic acids containing 1 to 4 carbon atoms, of which acetic acid, maleic acid and trichloroacetic acid are preferred examples; meta- and para-cresol are examples;
Cresols containing ~10 carbon atoms; hydroxybenzenes containing 2 to 3 hydroxy groups, examples being resorcinol and hydroquinone; Formamides; containing 3 to 10 carbon atoms, examples being dimethylformamide and dimethylacetamide. N・N-dialkylalkanolamide; N
- selected from the group consisting of 2-alkyl lactams containing 6 to 12 carbon atoms, of which methyl-pyrrolidone is an example, and cycloaliphatic sulfones containing 4 to 6 carbon atoms, of which tetramethylene sulfone is an example. It should be understood that some of these solvents may be complexed with hydrogen fluoride complexes. Preferred solvents for use in the present invention, alone or in combination, are aliphatic hydrocarbons, preferably prepared from the distillation of petroleum and a mixture of isoparaffinic hydrocarbons with an average molecular weight of 150 to 210 and a boiling point of 160°C to 220°C. light and heavy mineral oils; chlorinated olefinic hydrocarbons, preferably perchloroethylene; chlorinated aromatic hydrocarbons, preferably ortho-dichlorobenzene; monoalkyl-substituted aromatic hydrocarbons, preferably octylbenzene, decylbenzene. or dodecylbenzene; isomers or mixtures of dialkyl-substituted aromatic hydrocarbons, preferably xylene and diethylbenzene, and isomers of trialkyl-substituted aromatic hydrocarbons, preferably trimethylbenzene, or mixtures thereof. The solvent or solvent mixture used in the organic compositions of the present invention is usually present in an amount of about 20 to 90 wt%, preferably 30 to 70 wt% of the composition. For certain combinations of sulfonic acids, such as an equal mixture of dodecylbenzenesulfonic acid and benzenesulfonic acid, little or no solvent is required. The compositions of the present invention have important advantages over conventional organic compositions. That is, even after repeated use at elevated temperatures of about 20 DEG to 180 DEG C., inorganic supports such as silicon, silicon dioxide, and sapphire, particularly silicon dioxide, are substantially removed when subjected to the action of the stripping agent composition at this temperature. Contains very small amounts of fluoride ions, which have been found to prevent tarnishing and corrosion of metals, especially aluminum, without permanently etching them. The term "substantial etching" means etching inorganic, particularly silicon dioxide, wafers at an etch rate of about 0.2 Å/min or greater. As previously mentioned, the present invention includes fluoride and nitrile compound inhibitor systems. These two components are mixed with or without reacting with each other before being added to the rest of the stripping agent. Also, the fluoride and nitrile can be added separately to the stripper. Fluorides can be added in the form of various inorganic salts such as HF and ammonium bifluoride or ammonium fluoroborate. However, the fluoride will normally convert to HF in acidic stripper compositions. Typically, the fluoride is about 5 to 50% of the weight of the composition.
It is introduced into the composition in a range of 300 ppm, preferably about 100 to about 250 ppm, more preferably about 150 to 250 ppm. As mentioned above, large amounts of fluoride are likely to cause substantial etching of the inorganic support. However, for many compositions, use as a stripping agent at elevated temperatures reduces the fluoride concentration to 50 ppm and stabilizes at levels of 25, 20, 10 or 5 ppm. As discussed below, the nitriles of the present invention are effective in preventing fluoride from dropping below about 20 ppm and may maintain fluoride concentrations above 50 ppm. Nevertheless, it is desirable to combine nitrile with 10-25 ppm fluoride to prevent metal (particularly aluminum) corrosion. In the present invention, in addition to the fluoride, the inhibitor system includes a nitrile compound in an amount of about 0.01 to about 5%, preferably about 0.05 to about 1%, more preferably about 0.1 to about 0.3%, based on the total weight of the composition. Particularly in applications where the stripping agent acts on positive photoresists, levels in the lower ranges mentioned above are desirable. Therefore, for the stripping agent, the preferred nitrile level is about 0.01 to about 0.5 wt%, and the more preferred range is about 0.05 to about 0.3 wt%. Suitable nitrile compounds include the mononitriles and dinitriles described below. Suitable mononitriles are those of the general formula H-RCN, where R is alkylene (preferably 1 to 8 carbon atoms), arylene (preferably benzene) or alkylarylene (preferably 7 to 12 carbon atoms). be. R groups with more carbon atoms than defined as preferred tend to reduce solubility and leave residue on the support;
The nitrile groups contribute less relative to the weight of the added material or are otherwise less suitable than the preferred low molecular weight versions. Preferred mononitriles are acetonitrile, propionitrile and isobutyronitrile. Dinitriles are also suitable for use in the present invention. Such dinitriles have the general formula NC-R-CN, where R is alkylene (preferably 1 to 8 carbon atoms), arylene (preferably benzene) or alkylarylene (preferably 7 to 12 carbon atoms). It is what is expressed. Alkylarylene means an aryl having one or more alkyl side chains and two CN groups bonded to either the aryl and the alkyl, or two CN groups bonded to the aryl and the alkyl, one each. do. Dinitriles having larger R groups than those specified as preferred are not preferred for the reasons stated for large mononitriles. Polynitriles with more than two CN groups are not included because they are difficult to obtain or expensive. Preferred dinitriles are malonitrile (NC- _CH2 -CN), sachnonitrile (NC-CH2-CN),
−CH ₂ CH ₂ −CN), glutaronitrile (NC−
(CH ₂ ) ₃ −CN), adiponitrile (NC− (CH ₂ ) ₄ −
CN) and the following phthalonitrile.

[Formula] Nitriles corresponding to ethylenically unsaturated acids (ie, maleic acid) or oxalic acid (HOOC-COOH) are undesirable due to toxicity and stability. In all definitions of R above, the term "alkyl" or "alkylene" is used in its conventional sense and includes both straight and branched chain structures. The inhibitor systems of this invention are particularly effective when used with non-phenolic strippers of the type containing large amounts of sulfonic acids. Such a release agent is
No. 740,154 (filed November 8, 1976) and US Pat. No. 908,189 (filed May 22, 1978) by the present inventors. Examples of non-phenolic strippers containing chlorinated hydrocarbons are linear dodecylbenzenesulfonic acid, para-toluenesulfonic acid, alkylbenzenes such as dodecylbenzene, perchloroethylene and orthodichlorobenzene. Examples of ratios are 32%, 10%, 28
%, 20% and 8% of these five ingredients. Fluoride can be added to such compositions in the form of HF, for example at a fluoride ion concentration of 150 ppm by weight. A nitrile, such as acetonitrile, can then be added in an amount sufficient to provide about 0.2% acetonitrile by weight of the composition. It will be appreciated that the amounts of fluoride and acetonitrile are sufficiently small to have no appreciable effect on the concentrations of the five other components. An example of a composition that does not contain both a phenolic compound and a coronated hydrocarbon compound is about 45% by weight benzenesulfonic acid, 45% by weight
of dodecylbenzenesulfonic acid and 10% by weight of alkylbenzene, e.g. dodecylbenzene. Fluoride may be provided in such compositions, for example, at 200 ppm, and acetonitrile, for example, at 0.1% by weight. Another formulation of this type is 50-55% by weight
of dodecylbenzenesulfonic acid, 30-35% by weight of benzenesulfonic acid and 4-6% by weight of dodecylbenzene. In this composition
HF is added to give a fluoride concentration of about 200 ppm by weight, and acetonitrile, malononitrile or adiponitrile is added to give a concentration of 0.1% or 0.2% by weight. Other useful combinations of organic sulfonic acids and organic solvents in various ratios beyond those specifically mentioned above will be apparent to those skilled in the art from the aforementioned US patent applications and the prior art. The object of the present invention is not only compositions of organic stripping agents, but also methods of using the organic compositions of the invention. Typically, the compositions of the invention include a polymeric organic material,
For example, if a photoresist agent is applied to the surface of an aluminized inorganic support, this support is placed in a stripping solution for approximately
It will be used when removing by soaking at temperatures between 20°C and 180°C. usually,
The surface of the inorganic support, which may be silicon, sapphire or silicon dioxide, is coated as is customary in photoresist applications used in the semiconductor industry.
Metalized with aluminum or titanium. Examples of other common metals are molybdenum, tungsten and nickel-chromium alloys. Typically, the photoresists commonly removed by the compositions of the present invention are organic supported photoresists of the polyisoprene, polyvinyl cinnamate, and phenol-formaldehyde types as well as other types of polymers. These photoresists are applied to a support, such as silicon dioxide, silicon or aluminum, and then masked portions of the material. A typical such support is silicon with a surface coating of silicon dioxide covered with a thin layer of aluminum. The masked support is then exposed to a light, such as a 650 watt quartz lamp at 120 volts, for 1 to 15 seconds.
cm) to harden the exposed photoresist. Other exposure means can also be used for this purpose, for example an electron beam. For negative photoresists, the portions of the photoresist that are not exposed, ie, masked from light, are then removed with a mild solvent. This solvent does not dissolve the exposed photoresist, thus leaving a pattern, eg, an electrical circuit pattern, on the exposed support. In the case of positive photoresist,
It is the exposed parts that are removed with a mild solvent. The remaining photoresist is then baked to further harden, and the portions of the support not covered with photoresist are etched or otherwise treated. The cured photoresist must then be removed before further processing or use of the support. When using the stripper compositions of the present invention, the baked photoresist coated support is mixed with the stripper solution from about 20°C to about 180°C, preferably from 90°C to
Contact is made at a temperature of 120°C. The time required to peel off the photoresist is
It varies widely depending on the particular polymer used in the photoresist and the processing conditions of the photoresist. Generally, the time involved is 1 to 10 minutes, but
Some resists can be used for 15 minutes, depending on the baking temperature.
After requiring 30 minutes or 1 hour of contact with the stripper solution, the polymeric photoresist is separated from the support. The contact time depends on the degree of polymerization of the photoresist and the thickness of the polymer formed.
After the photoresist is removed, the support is washed with a suitable solvent, such as water, alcohol, or a chlorinated hydrocarbon, such as perchloroethylene, to remove traces of the composition, and then dried. The invention will be illustrated by the following examples, but the invention is not limited by these examples. Examples 1-10 51% by weight dodecylbenzenesulfonic acid (obtained from Stephan Chemical Company, approximately 18%
of C-16, 38% C-17, 33% C-18 and 10
% C-19 and contains approximately 2.0% free hydrocarbons and 0.5% free sulfuric acid), 20% by weight benzenesulfonic acid (obtained from Jim Walters Associates, approximately A non-phenolic stripper was prepared from (containing 1.0% free sulfuric acid) and 29% by weight dodecylbenzene (obtained from Continental Oil Company, same carbon distribution as dodecylbenzene sulfonic acid above). This composition was determined to contain approximately 0.75% water by weight by azeotropic distillation with xylene. HF (with water) at each level shown in Table 1.
A test tube containing the above composition was prepared with the addition of a 50:50 mixture) and/or a nitrile compound as shown in Table 1. 3 inch piece of aluminum foil x
1 inch 0.002 inch (7.62cm x 2.54cm x 0.0051
cm) was weighed on an analytical balance and placed in each test tube.
The test tube was covered and kept at 100°C for 20 hours. The foil strips were then washed, dried, and reweighed on an analytical balance. From the difference in weight, the corrosion rate of aluminum (Angstroms/min) was calculated. The results are shown in Table 1.

【table】

Table Examples 11-29 50% by weight dodecylbenzenesulfonic acid, 34% by weight benzenesulfonic acid and 12% by weight dodecylbenzene (each as in Examples 1-10) and 4% by weight toluene Sulfonic acid (obtained from Jim Walters Associates,
Examples 1-10 were repeated using a stripping agent (containing about 1.0% free sulfuric acid). Different batches contained varying amounts of water depending on the benzenesulfonic acid and toluenesulfonic acid components (determined by azeotropic extraction with xylene and shown in Table 2). HF and/or acetonitrile as in Examples 1-10 with varying levels thereof;
It was introduced to the level shown in Table 2. Examples 1 to 10
By repeating this procedure, the aluminum corrosion rates shown in Table 2 were measured.

【table】

TABLE Examples 30-35 Compositions were prepared as above, but also contained chlorinated hydrocarbon solvents: Dodecylbenzenesulfonic acid 34% by weight Dodecylbenzene 10 Toluenesulfonic acid 8 Orthodichlorobenzene 28% Chlorethylene 20 The impurity content and carbon distribution of the first three components were as in Examples 1-29. 3 inches x 0.625 inches x 0.008 inches (7.62 cm x 1.59 cm
The same procedure was repeated except that a titanium foil of 0.020 cm) was used. The levels of HF (analyzed by comparative assay using a fluoride specific ion electrode), nitrile (optionally added) and water were as shown in Table 3. The corrosion rate of titanium is
The calculated values were as shown in Table 3.

TABLE Examples 36-38 Using the chlorinated hydrocarbon-containing compositions of Examples 30-35, HF was added at 150 ppm and acetonitrile was added at 0%, 0.15% and 0.30%. The composition was then heated to 100°C for 3 hours in an open beaker.
It was held for a minute, during which time 15-20% by weight of the total composition was lost to evaporation. This simulates repeated use of a stripping agent. The levels of HF were then determined by comparative assay to be at the levels shown in Table 4, and the samples were placed in test tubes. The corrosion rate of aluminum was then measured as in Examples 1-29.

[Table] In other experiments using fluoride-containing materials,
Each of the nitriles tested reduced the amount of fluoride lost when the composition was heated to 100° C. for 3 hours 15 minutes to 3 hours 30 minutes. It has been observed that the corrosion rate of aluminum is reduced when a combination of fluoride and nitrile is present. Examples 39-56 51% by weight dodecylbenzenesulfonic acid, 33% by weight benzenesulfonic acid, 11% by weight TXA
(a product of Witco Chemical Co., Ltd., containing approximately 50% by weight toluenesulfonic acid and 50% by weight xylenesulfonic acid and trace amounts of ethylbenzenesulfonic acid) and a large batch (approximately 4 kg) of 5% by weight dodecylbenzene. Prepared. Components other than TXA were as described for Examples 1-10. The batch was vacuum heated to 110°C for 6 hours to remove excess water. A small aliquot of this batch was purified by azeotropic vacuum distillation with xylene to yield 0.27%
It was determined that the water contained in Water was added to a 1Kg portion of this batch to give a level of 0.3% water. This part was then divided into two parts and nitrile (acetonitrile = AN, malononitrile = MN)
were added to the first half of the samples as shown in Table 5 for Example 39. Fluoride (HF and water
to the second half (as a 50:50 mixture) in an amount of 20 ppm fluoride and the nitrile in Example 40~
Added as indicated for 43. Second 1Kg of water
of water to make it 0.6%, then divide it in half and add fluoride to the second half.
20 ppm and nitrile was added to both half the samples, all shown in Table 5 for Examples 44-53. Examples 54 and 55 were prepared from the remaining samples of the original 1 Kg portion and adiponitrile. Example 56 was a blend of various balances. Each sample was then placed in a test tube and 3 inches x
1 inch x 0.002 inch (7.62cm x 2.54cm x 0.0051
A strip of aluminum foil weighing 1 cm) was placed. The tube was covered and kept at 100°C for 18 hours. The flakes were then washed, dried, and weighed on an analytical balance. From the difference in weight, the corrosion rate of aluminum (Angstroms/min) was calculated.

Table: Examples 57-67 Water was added to the remainder of the large (4 Kg) batch of stripper used in Examples 39-56 to give 0.6% water. HF and/or the same three nitriles (AN, MN or ADN) were added to 10 of the 11 samples of this composition to achieve the levels shown in Table 6 for Examples 58-67. Example 57 was a similar sample except that it contained no fluoride or nitrile. Four of these compositions were made up into similar samples used in Examples 44-56, as shown in Table 6. Next, add each of these strippers in a beaker.
It was heated to 100°C and held at this temperature for 30 minutes to simulate service conditions. It should be noted that the original 4Kg sample (of which these samples are a portion) was heated to 110°C for 6 hours. If the stripping agent is not heated, its stripping efficiency may be reduced. A 2 inch (5.08 cm) diameter silicon wafer coated with phenol-formaldehyde photoresist (AZ1350J, available from Shipley Company) and baked for 40 minutes at 175°C was then assembled into a single wafer holder. The samples were immersed in each beaker at 100° C. for 5 minute intervals. The wafers were inspected periodically to determine the total peel time. The wafer was removed, washed with water, and if it was found not to be completely removed, it was returned to the beaker and the time for near complete release was measured. The total peeling time for each is
Confirmed by dipping fresh coated wafer into a beaker. The results are shown in Table 6. As can be seen, the 0.2% level of nitrile had little or no negative effect on strip time, while increasing levels of 0.5% and 1.0% nitrile had a significant negative effect. However, returning to Table 5, the combination of fluoride and nitrile is 0.1% (Examples 50, 52 and
55) and 0.2% (Examples 51 and 53) show substantial corrosion inhibition. As shown in Examples 59, 62, and 65, these lower levels of nitrile did not significantly impede strip speed.

【table】

Claims (1)

[Scope of Claims] 1 At least one of the formula R-SO ₃ H (wherein R is alkyl of 1 to 18 carbon atoms, monohydroxyalkyl of 1 to 18 carbon atoms, aryl of 6 to 10 carbon atoms) , monoalkylaryl in which the alkyl group has 1 to 14 carbon atoms, dialkylaryl in which each alkyl group has 1 to 4 carbon atoms, monohydroxyaryl in which each alkyl group has 1 to 4 carbon atoms, monohydroxyaryl having 6 to 10 carbon atoms, 7 carbon atoms
an organic sulfonic acid selected from the group consisting of ~11 monoalkyl-hydroxyaryls and monochloro-hydroxyaryls of 6 to 10 carbon atoms, optionally at least one organic solvent, and An organic stripper composition for removing polymeric organic materials from a metallized inorganic support, comprising an inhibitor system comprising from about 5 to about 300 ppm by weight of fluoride, based on the weight of the composition. The system contains from about 0.01% to about 5% by weight of the composition of formula H-
An organic stripping agent composition further comprising a nitrile compound of the formula R-CN or NC-R-CN, where R is alkylene, arylene or alkylarylene. 2. The stripping composition of claim 1 containing from about 0.05 to about 1% by weight of a nitrile compound. 3. The stripping composition of claim 1 containing from about 0.05 to about 0.3% by weight of a nitrile compound. 4. The stripping agent composition according to claim 1, wherein the nitrile compound is acetonitrile. 5. The stripping agent composition according to claim 1, wherein the nitrile compound is malononitrile. 6. The stripping agent composition according to claim 1, wherein the nitrile compound is adiponitrile. 7. Claim 1, wherein the sulfonic acid contains at least one sulfonic acid selected from benzenesulfonic acid, toluenesulfonic acid, cumenesulfonic acid, decylbenzenesulfonic acid, and dodecylbenzenesulfonic acid as a main stripping agent. The stripping agent composition described in Section 1. 8 Claims 1 to 7 refer to the polymeric organic substance.
With the release agent composition described in any of paragraphs 1 and 20° C.
A method for stripping polymeric organic substances from a metallized inorganic support, characterized in that contact is carried out at a temperature of 180°C. 9. A patent in which the polymeric organic material is a photoresist consisting of a polymer selected from the group consisting of polyisoprene, polyvinyl cinnamate and phenol-formaldehyde resin, and the inorganic support is silicon with a coating of silicon dioxide. The method according to claim 8. 10 The photoresist is a phenol-formaldehyde resin and the stripper composition is about 0.01 to
10. The method of claim 9 containing about 0.5% by weight nitrile.