JPS6160913B2 - - Google Patents
Info
- Publication number
- JPS6160913B2 JPS6160913B2 JP57017512A JP1751282A JPS6160913B2 JP S6160913 B2 JPS6160913 B2 JP S6160913B2 JP 57017512 A JP57017512 A JP 57017512A JP 1751282 A JP1751282 A JP 1751282A JP S6160913 B2 JPS6160913 B2 JP S6160913B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- metal
- plasma
- arc
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000007740 vapor deposition Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 239000000945 filler Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 18
- 238000003466 welding Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、蒸着する金属に大電流を流してアー
クを発生させて蒸気化し、蒸着を行う蒸着方法及
び蒸着装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor deposition method and a vapor deposition apparatus in which metal to be vapor deposited is vaporized by passing a large current through the metal to generate an arc.
蒸着技術は、半導体工業やセラミツク工業等に
おいて広く利用されており、重要性を増してい
る。例えば、金属とセラミツクとを接合する場合
に、セラミツクに金属を蒸着し、金属とセラミツ
クとの接合を容易にしている。そして、従来一般
に用いられている蒸着方法は、真空蒸着法であ
る。
Vapor deposition technology is widely used in the semiconductor industry, ceramic industry, etc., and is becoming increasingly important. For example, when joining metal and ceramic, the metal is deposited on the ceramic to facilitate the joining. The vapor deposition method commonly used in the past is the vacuum vapor deposition method.
その概要を第１図に従つて説明する。真空チヤ
ンバ１０内は、10-4〜10-5Torrに減圧してあり、
蒸気化する金属である蒸着物質１２を入れたるつ
ぼ１４を内設している。そして、電子ビーム又は
加熱ヒータ１６等により蒸着物質１２は、加熱さ
れて金属蒸気１８となり、金属蒸気１８が試料２
０に凝着する。 The outline will be explained according to FIG. The pressure inside the vacuum chamber 10 is reduced to 10 -4 to 10 -5 Torr.
A crucible 14 containing a vapor deposition substance 12, which is a metal to be vaporized, is provided inside. Then, the vapor deposition substance 12 is heated by an electron beam, a heater 16, etc. and becomes metal vapor 18, and the metal vapor 18 is heated to the sample 2.
It sticks to 0.
他方、被溶接物と溶加材との間にアークを発生
させて溶加材を溶かして溶接する。いわゆるMIG
溶接方法においては、溶接電流密度が大きくなる
と、溶加材の溶滴が微細化する現象が知られてい
る。即ち、MIG溶接法においては、溶接電流が小
さいときは、第２図ａに示すように溶加材である
ワイヤ２２からの溶滴２４は非常に大きく、わず
かの金属微粒子２６を伴つて被溶接物２８上に溶
着する。そして、ワイヤ２２が直径1.2mmの鋼で
ある場合に、溶接電流が270A前後において第２
図ｂに示すように溶滴２４の直径がワイヤ径の約
1/2以下となつていわゆるスプレー移行し、溶接
に適した状態となる。また、さらに溶接電流が大
きくなると、第２図ｃに示すように溶滴は一層微
細化するが、被溶接物２８への溶着量が増大して
制御が困難となるため、溶接用として実用化され
ていない。 On the other hand, an arc is generated between the workpiece and the filler metal to melt the filler metal and perform welding. So-called MIG
In welding methods, it is known that as the welding current density increases, filler metal droplets become finer. That is, in the MIG welding method, when the welding current is small, as shown in FIG. Weld onto object 28. When the wire 22 is made of steel with a diameter of 1.2 mm, the second welding current is approximately 270 A.
As shown in Figure b, the diameter of the droplet 24 is approximately the diameter of the wire.
When it becomes less than 1/2, it undergoes so-called spray transfer and becomes suitable for welding. In addition, as the welding current increases further, the droplets become even finer as shown in Figure 2c, but the amount of welding on the workpiece 28 increases and becomes difficult to control, so it is not practical for welding. It has not been.
また、特公昭56―509号公報と特開昭56―35768
号公報とには、充電したコンデンサを放電させて
電極に衝撃電流を流し、高温プラズマと金属蒸気
とを発生させ、この金属蒸気を母材に蒸着させる
技術が開示してある。 Also, Japanese Patent Publication No. 56-509 and Japanese Patent Application Publication No. 56-35768
The publication discloses a technique in which a charged capacitor is discharged and an impact current is passed through the electrodes to generate high-temperature plasma and metal vapor, and the metal vapor is deposited on a base material.
しかし、第１図に示した真空蒸着法は、蒸着物
質の融点が高いと高温に加熱されたるつぼ１４か
ら蒸着物質１２中に不純物が溶出する等のため、
蒸着物質１２が比較的融点のものに限られてい
る。また、真空チヤンバ１０内は高真空に保持す
る必要があるため、蒸着に適した真空度にするた
めにかなりの時間がかかつて能率的でなく、装置
も非常に高価なものとなつている。
However, in the vacuum evaporation method shown in FIG. 1, if the melting point of the evaporation material is high, impurities will be eluted into the evaporation material 12 from the crucible 14 heated to a high temperature.
The deposition material 12 is limited to those having a relatively melting point. Furthermore, since the inside of the vacuum chamber 10 must be maintained at a high vacuum, it takes a considerable amount of time to achieve a vacuum level suitable for vapor deposition, which is not efficient and requires very expensive equipment.
一方特公昭56―509号公報に記載のものは、被
覆材よりなる電極間の放電により発生した高温プ
ラズマと金属蒸気により、金属蒸気を母材に被着
させるようにしてあるため、金属蒸気が周囲に飛
散し、大変に効率が悪い。また、特開昭56―
35768号公報に記載のものは、蒸着材のワイヤの
一側に蒸着しようとする被処理体、他側に磁界発
生コイルとを配置し、ワイヤが蒸発して生じた金
属蒸気を、磁界発生コイルが発生した磁界により
被処理体に移動させるようにしているが、磁力が
拡散して金属蒸気も拡散するため、蒸着効率を充
分に上げることができない。 On the other hand, in the method described in Japanese Patent Publication No. 56-509, the metal vapor is deposited on the base material by the high temperature plasma and metal vapor generated by the discharge between the electrodes made of the coating material. It scatters around and is very inefficient. Also, Unexamined Japanese Patent Publication No. 1986-
In the method described in Publication No. 35768, the object to be evaporated is placed on one side of a wire of evaporation material, and a magnetic field generation coil is placed on the other side, and the metal vapor generated by the evaporation of the wire is transferred to the magnetic field generation coil. However, since the magnetic force diffuses and the metal vapor also diffuses, the deposition efficiency cannot be sufficiently increased.
本発明は、前記従来技術の欠点を解消するため
になされたもので、安価に効率よく蒸着すること
ができる蒸着方法と、この蒸着方法のための蒸着
装置とを提供することを目的とする。 The present invention has been made in order to eliminate the drawbacks of the prior art, and aims to provide a vapor deposition method that allows efficient vapor deposition at low cost, and a vapor deposition apparatus for this vapor deposition method.
本発明は、前記したアーク電流の電流密度を高
めると、溶滴が微細化する現象に着目してなされ
たもので、本発明の第１図は、金属を蒸気化して
被蒸着物に凝着させる蒸着方法において、前記金
属に大電流を流してアークを発生させて前記金属
を蒸気化し、この発生した金属蒸気をプラズマ気
流により前記被蒸着物に吹き付けることを特徴と
する蒸着方法である。
The present invention was made by focusing on the phenomenon that when the current density of the arc current is increased, the droplets become finer. This vapor deposition method is characterized in that a large current is passed through the metal to generate an arc to vaporize the metal, and the generated metal vapor is sprayed onto the object to be vaporized using a plasma stream.
また、本発明の第２は、上記第１の発明を実施
するための、金属を蒸気化して被蒸着物に凝着さ
せる蒸着装置において、前記金属により構成した
一対の電極を有し、この電極間に大電流を流して
アークを発生させることにより前記金属を蒸気化
するアーク発生装置と、前記金属の蒸気を前記被
蒸着物に吹き付けるプラズマを発生させるプラズ
マ発生装置と、前記アーク発生装置のアーク電流
を検出する第１の検出器と、前記プラズマ発生装
置のプラズマ電流を検出する第２の検出器と、前
記第１の検出器と前記第２の検出器との検出信号
により前記アーク電流と前記プラズマ電流とを制
御する制御装置とからなることを特徴とする蒸着
装置である。 A second aspect of the present invention is a vapor deposition apparatus for carrying out the first aspect of the present invention, which vaporizes a metal and deposits it on an object to be vaporized, which includes a pair of electrodes made of the metal. an arc generator that vaporizes the metal by passing a large current between the two to generate an arc; a plasma generator that generates plasma that sprays the vapor of the metal onto the object; and an arc of the arc generator. A first detector detects the current, a second detector detects the plasma current of the plasma generator, and detects the arc current by the detection signals of the first detector and the second detector. The vapor deposition apparatus is characterized by comprising: a control device for controlling the plasma current; and a control device for controlling the plasma current.
上記の如く構成した本発明においては、蒸気化
した蒸着金属をプラズマ気流によつて被蒸着物に
吹き付けるため、金属蒸気の飛散や拡散を防ぐこ
とができ、安価に効率よく蒸着をすることができ
る。
In the present invention configured as described above, since the vaporized metal to be deposited is sprayed onto the object to be deposited using a plasma stream, it is possible to prevent scattering and diffusion of the metal vapor, and it is possible to perform the deposition efficiently at low cost. .
本発明に係る蒸着方法及び蒸着装置の好ましい
実施例を添付図面に従つて詳説する。
Preferred embodiments of the vapor deposition method and vapor deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
第３図は、本発明に係る蒸着方法及び蒸着装置
の一実施例の説明図であり、第４図は本実施例に
おけるアークパルス電流及びプラズマ電流を模式
的に示した図である。 FIG. 3 is an explanatory diagram of one embodiment of the vapor deposition method and vapor deposition apparatus according to the present invention, and FIG. 4 is a diagram schematically showing the arc pulse current and plasma current in this embodiment.
第３図において、略漏斗状に形成されたノズル
３０は、下端が開口し、仕切部３２によつて中央
部ガス流路３４と周縁部ガス流路３６が形成され
た略二重管構造をなす。そして、ガス流路３４，
３６の上端には、それぞれ入口ノズル３８，４０
が取り付けられている。また、ノズル３０は、中
央上端部に挿入したタングステン等の非消耗性の
電極４２を絶縁物４４を介して保持している。さ
らに、周縁部ガス流路３６には、一対の接触子４
６，４８が挿入され、これら接触子４６，４８
は、それぞれ絶縁物４４によりノズル３０と絶縁
されていると共に、アーク発生用の電極となる蒸
着金属である溶加棒５０，５２を挿通させてい
る。そして、溶加棒５０，５２は、アーク用電源
に接続され、溶加棒５０，５２間に発生するアー
クにより蒸気化する。また、電極４２とノズル３
０とはプラズマ用電極であつて、プラズマ用電源
に接続されてプラズマを発生し、前記溶加棒５
０，５２が蒸気化して生じた金属蒸気を、被蒸着
物である母材５４に吹き付ける。 In FIG. 3, the nozzle 30 formed in a substantially funnel shape has a substantially double-pipe structure in which the lower end is open and a central gas flow path 34 and a peripheral gas flow path 36 are formed by a partition portion 32. Eggplant. And the gas flow path 34,
36 have inlet nozzles 38 and 40, respectively.
is installed. Further, the nozzle 30 holds a non-consumable electrode 42 made of tungsten or the like inserted into the upper center portion of the nozzle 30 via an insulator 44 . Furthermore, a pair of contacts 4 are provided in the peripheral gas flow path 36.
6, 48 are inserted, and these contacts 46, 48
are insulated from the nozzle 30 by an insulator 44, and have filler rods 50 and 52 made of vapor-deposited metal that serve as electrodes for arc generation inserted therethrough. The filler rods 50 and 52 are then connected to an arc power source and vaporized by the arc generated between the filler rods 50 and 52. In addition, the electrode 42 and the nozzle 3
0 is a plasma electrode, which is connected to a plasma power source to generate plasma, and is connected to the filler rod 5.
The metal vapor generated by vaporizing 0,52 is sprayed onto the base material 54, which is the object to be vaporized.
即ち、母材５４を所定の位置にセツトし、入口
ノズル３８，４０よりガス流路３４，３６にアル
ゴンガス等の不活性ガスを導き、制御装置５６に
蒸着指令を与えると、制御装置５６は、所定の初
期プラズマ電流を供給するように設定してある初
期プラズマ用ポテンシオメータ５８のアナログス
イツチ６０をONにすると共に、TIG溶接等に用
いられている一般的構造を有するスタータ用高周
波発振器６２のスイツチ６４をONにし、初期プ
ラズマ電流を発生させる。アナログスイツチ６０
がONすると、ポテンシオメータ５８からの電流
は、プラズマ電流を検出する第２の検出器である
電流検出CT６６を介してノズル３０に達し、ま
た、差動増幅器６８を介してトランジスタ７０を
作動し、図示しない電源からの整流された電流を
電極４２とノズル３０との間に供給し、プラズマ
ガス７２を発生させる。そして、プラズマ電流
は、電流検出CT６６により検出され、差動増幅
器６８において設定値と比較増幅される。制御装
置５６は、その偏差信号により、アナログスイツ
チ６０を介して、トランジスタ７０が所定のプラ
ズマ電流を供給するように制御する。 That is, when the base material 54 is set at a predetermined position, an inert gas such as argon gas is introduced into the gas channels 34 and 36 from the inlet nozzles 38 and 40, and a vapor deposition command is given to the control device 56, the control device 56 At the same time, the analog switch 60 of the initial plasma potentiometer 58, which is set to supply a predetermined initial plasma current, is turned on, and the starter high-frequency oscillator 62, which has a general structure used in TIG welding, is turned on. Switch 64 is turned on to generate an initial plasma current. analog switch 60
When ON, the current from the potentiometer 58 reaches the nozzle 30 via the current detection CT 66, which is a second detector for detecting the plasma current, and also operates the transistor 70 via the differential amplifier 68. A rectified current from a power source (not shown) is supplied between the electrode 42 and the nozzle 30 to generate plasma gas 72. Then, the plasma current is detected by a current detection CT 66, and is compared and amplified with a set value in a differential amplifier 68. Based on the deviation signal, the control device 56 controls the transistor 70 to supply a predetermined plasma current via the analog switch 60.
制御装置５６は、第４図に示すように所定の初
期プラズマ電流により、プラズマガス７２が発生
したことを確認すると、モータ７４，７６を介し
て溶加棒５０，５２間の放電距離Ｌを所定の値に
制御する。即ち、電極４２と接触子４６とは、定
電圧電源７８、電流検出CT８０及び抵抗８２を
介して電気的に接続されているので、モータ７４
によつて溶加棒５０が送り出され、先端がプラズ
マガス７２に近づくに従い、抵抗８２に電流がな
がれる。この抵抗８２は、1A以下の微弱な電流
を流すための制限抵抗であつて、この抵抗８２を
流れる電流が電流検出CT８０により検出され、
制御装置５６に入力される。そして、制御装置５
６は、抵抗８２を流れる電流が予め定めた所定の
値となるように、モータ７４により溶加棒５０を
送給し、溶加棒５０の先端が一定位置になるよう
にする。溶加棒５２は、定電圧電源８４から抵抗
８６に流れる電流を、電流検出CT８８において
検出し、制御装置５６に入力することにより、前
記と同様に制御される。 When the control device 56 confirms that plasma gas 72 is generated by a predetermined initial plasma current as shown in FIG. control to the value of That is, since the electrode 42 and the contactor 46 are electrically connected via the constant voltage power supply 78, the current detection CT 80, and the resistor 82, the motor 74
The filler rod 50 is sent out, and as the tip approaches the plasma gas 72, a current flows through the resistor 82. This resistor 82 is a limiting resistor for flowing a weak current of 1A or less, and the current flowing through this resistor 82 is detected by the current detection CT 80,
It is input to the control device 56. And the control device 5
6 feeds the filler rod 50 by the motor 74 so that the current flowing through the resistor 82 becomes a predetermined value, so that the tip of the filler rod 50 is at a constant position. The filler rod 52 is controlled in the same manner as described above by detecting the current flowing from the constant voltage power source 84 to the resistor 86 in the current detection CT 88 and inputting it to the control device 56.
上記の如くして蒸着膜を安定して得るのに重要
な因子となる溶加棒５０，５２間のアーク放電距
離Ｌが所定の値に設定されると、制御装置５６
は、パルスプラズマ電流設定用ポテンシオメータ
９０のアナログスイツチ９２をONにし、第４図
に示すように、初期プラズマ電流にパルスプラズ
マ電流を加算する。それと同時に、制御装置５６
は、第４図に示すように溶加棒５０，５２間にパ
ルスアーク電流を供給する。このアーク電流は、
図示しない電源から変圧器９４の二次側に誘導さ
れ、ゲート信号発生器９６の信号により、整流器
９８において常時周期的に整流されており、制御
装置５６がGTO１００をONにすることにより、
溶加棒５０，５２間に供給され、また、第１の検
出器である電流検出CT１０２により検出されて
制御装置５６に入力され、電流密度が制御され
る。溶加棒５０，５２間にアーク電流が供給され
ると、溶加棒５０，５２間にプラズマガス７２が
存在しているため、自動的にアーク放電が発生
し、溶加棒５０，５２は蒸気化する。溶加棒５
０，５２が蒸気化した金属蒸気は、ガス通路３
４，３６を流れる不活性ガスの流れに乗つたプラ
ズマガス７２により、母材５４上に吹き付けられ
凝着する。そして、制御装置５６は、予め設定し
た所定時間溶加棒５０，５２間に１パルスのアー
ク電流を供給して放電を行うと、GTO１００及
びアナログスイツチ９２をOFFにし、蒸着を終
了する。 When the arc discharge distance L between the filler rods 50 and 52, which is an important factor for stably obtaining a deposited film as described above, is set to a predetermined value, the control device 56
Then, the analog switch 92 of the pulsed plasma current setting potentiometer 90 is turned on, and the pulsed plasma current is added to the initial plasma current as shown in FIG. At the same time, the control device 56
supplies a pulsed arc current between filler rods 50 and 52 as shown in FIG. This arc current is
It is guided to the secondary side of the transformer 94 from a power supply (not shown), and is constantly periodically rectified in the rectifier 98 by a signal from the gate signal generator 96, and when the control device 56 turns on the GTO 100,
The current is supplied between the filler rods 50 and 52, is detected by the current detection CT 102, which is the first detector, and is input to the control device 56, so that the current density is controlled. When an arc current is supplied between the filler rods 50 and 52, since plasma gas 72 exists between the filler rods 50 and 52, arc discharge automatically occurs, and the filler rods 50 and 52 vaporize. Filler rod 5
The metal vapor obtained by vaporizing 0 and 52 is passed through the gas passage 3.
The plasma gas 72 riding on the flow of inert gas flowing through the base material 4 and 36 is blown onto the base material 54 and adheres thereto. Then, the control device 56 supplies one pulse of arc current between the filler rods 50 and 52 for a predetermined period of time to cause discharge, and then turns off the GTO 100 and the analog switch 92 to end the vapor deposition.
上記のように、不活性ガスの雰囲気中において
蒸着を行うことにより、真空装置を必要とせず安
価に蒸着をすることができる。しかも、金属蒸気
は、プラズマガス７２に乗つて母材５４に吹き付
けられるため、飛散したり拡散したりすることが
少なく、効率よく凝着され、均一な蒸着膜を形成
する。また、アーク電流がパルスであるため、こ
のパルス幅を変えることにより、蒸着量を適正な
値に自由に制御することができる。さらに、プラ
ズマガス７２は、プラズマ電流のパルス幅を任意
にとることにより、母材５４の予熱あるいは後熱
作用をし、より強固な蒸着膜を得ることが可能と
なる。 As described above, by performing vapor deposition in an inert gas atmosphere, vapor deposition can be performed at low cost without requiring a vacuum device. Moreover, since the metal vapor is carried by the plasma gas 72 and blown onto the base material 54, it is less likely to scatter or diffuse, and is efficiently deposited to form a uniform vapor deposited film. Further, since the arc current is a pulse, the amount of vapor deposition can be freely controlled to an appropriate value by changing the pulse width. Further, by setting the pulse width of the plasma current to an arbitrary value, the plasma gas 72 can preheat or postheat the base material 54, making it possible to obtain a stronger deposited film.
次に、上記実施例により実施した蒸着の一例を
示す。母材は、Al2O3系セラミツクを用い、溶加
棒には直径１mmのMoを使用した。蒸着条件は、
パルスアーク電流がピーク値15000A、パルス幅
0.5msec、パルスプラズマ電流がピーク値300A、
パルス幅20msec、アルゴンガスの流量が1000
／minである。これらの蒸着条件において、１
パルスのアーク放電において蒸着した結果、1600
mm2の被蒸着物に20μｍの蒸着膜を得ることができ
た。しかも、顕微鏡観察の結果、蒸着膜は緻密で
あつて、非常に強固に母材に密着していることが
明らかになつた。これは、アークまたはプラズマ
ガスにより、母材が加熱されるため、Al2C3の酸
素とMoの金属蒸気との化合を促進させることが
できるためである。 Next, an example of vapor deposition carried out according to the above embodiment will be shown. The base material was Al 2 O 3 ceramic, and the filler rod was Mo with a diameter of 1 mm. The deposition conditions are
Pulse arc current peak value 15000A, pulse width
0.5msec, pulse plasma current peak value 300A,
Pulse width 20msec, argon gas flow rate 1000
/min. Under these deposition conditions, 1
As a result of deposition in a pulsed arc discharge, 1600
It was possible to obtain a 20 μm deposited film on a mm 2 object. Furthermore, microscopic observation revealed that the deposited film was dense and adhered very firmly to the base material. This is because the arc or plasma gas heats the base material, which can promote the combination of the oxygen of Al 2 C 3 and the metal vapor of Mo.
第５図は、本発明に係る他の実施例を示すもの
である。本実施例は、母材が金属である場合に適
しており、母材５４自体がプラズマ用電極となつ
ていて、プラズマガス７２が電極４２と母材５４
との間において発生する。そのため、溶加棒５
０，５２の金属蒸気は、一部が母材と合金化して
強固な蒸着膜を得ることができる。なお、母材５
４を負極にて電極４２を正極にすると、アルゴン
イオンが母材の酸化膜を破壊し、クリーニングす
るためより効果的である。 FIG. 5 shows another embodiment according to the present invention. This embodiment is suitable when the base material is metal, and the base material 54 itself serves as a plasma electrode, and the plasma gas 72 is connected to the electrode 42 and the base material 54.
Occurs between. Therefore, the filler rod 5
A part of the metal vapor of 0.52 is alloyed with the base material and a strong deposited film can be obtained. In addition, the base material 5
It is more effective to use 4 as a negative electrode and electrode 42 as a positive electrode because the argon ions destroy the oxide film of the base material and perform cleaning.
以上説明したように本発明によれば、蒸着金属
を大電流アーク放電によつて蒸気化し、プラズマ
気流により被蒸着物に吹き付けることにより、安
価に効率よく蒸着を行うことができる。
As explained above, according to the present invention, the vaporized metal is vaporized by large current arc discharge, and the vaporized metal is sprayed onto the object to be vaporized using a plasma stream, thereby making it possible to perform vapor deposition efficiently at low cost.
第１図は真空蒸着法の概要の説明図、第２図
ａ，ｂ，ｃはMIG溶接におけるアーク電流と溶加
材の溶滴との関係を示す説明図、第３図は本発明
に係る蒸着方法及び蒸着装置の実施例の説明図、
第４図は第３図の実施例におけるアーク電流とプ
ラズマ電流の一実施例を模式的に示した図、第５
図は本発明に係る他の実施例の説明図である。
３０…ノズル、４２…電極、５０，５２…溶加
棒、５４…母材、５６…制御装置、５８，９０…
ポテンシオメータ、６２…スタータ用高周波発振
器、６６，８０，８８，１０２…電流検出CT、
７２…プラズマガス、７４，７６…モータ、９４
…変圧器、９８…整流器。
Fig. 1 is an explanatory diagram of the outline of the vacuum evaporation method, Fig. 2 a, b, and c are explanatory diagrams showing the relationship between arc current and filler metal droplets in MIG welding, and Fig. 3 is an explanatory diagram showing the relationship between arc current and filler metal droplets in MIG welding. An explanatory diagram of an example of a vapor deposition method and a vapor deposition apparatus,
Figure 4 is a diagram schematically showing an example of the arc current and plasma current in the example of Figure 3;
The figure is an explanatory diagram of another embodiment according to the present invention. 30... Nozzle, 42... Electrode, 50, 52... Filler rod, 54... Base material, 56... Control device, 58, 90...
Potentiometer, 62... High frequency oscillator for starter, 66, 80, 88, 102... Current detection CT,
72...Plasma gas, 74, 76...Motor, 94
...Transformer, 98...Rectifier.
Claims (1)
方法において、前記金属に大電流を流してアーク
を発生させて前記金属を蒸気化し、この発生した
金属蒸気をプラズマ気流により前記被蒸着物に吹
き付けることを特徴とする蒸着方法。 ２ 前記金属に流す大電流が１ピークパルス電流
であり、前記被蒸着物がプラズマの発生電極であ
ることを特徴とする前記特許請求の範囲第１項記
載の蒸着方法。 ３ 金属を蒸気化して被蒸着物に凝着させる蒸着
装置において、前記金属により構成した一対の電
極を有し、この電極間に大電流を流してアークを
発生させることにより前記金属を蒸気化するアー
ク発生装置と、前記金属の蒸気を前記被蒸着物に
吹き付けるプラズマを発生させるプラズマ発生装
置と、前記アーク発生装置のアーク電流を検出す
る第１の検出器と、前記プラズマ発生装置のプラ
ズマ電流を検出する第２の検出器と、前記第１の
検出器と、前記第２の検出器との検出信号により
前記アーク電流と前記プラズマ電流とを制御する
制御装置とからなることを特徴とする蒸着装置。 ４ 前記アーク発生装置が前記電極と前記プラズ
マ発生装置のプラズマ電極とに電気的に接続した
定電圧電源と、前記電極と前記プラズマ電極との
間に流れる電流を検出する電流検出器と、この電
流検出器の検出信号を介して前記制御装置により
制御され、前記一対の電極間隔を一定にするよう
前記金属を送る駆動装置を有し、前記アーク電流
が１ピークパルス電流であることを特徴とする前
記特許請求の範囲第３項記載の蒸着装置。[Scope of Claims] 1. In a vapor deposition method in which a metal is vaporized and deposited on an object to be vaporized, a large current is passed through the metal to generate an arc to vaporize the metal, and the generated metal vapor is transferred to a plasma stream. A vapor deposition method characterized by spraying onto the object to be vapor-deposited. 2. The vapor deposition method according to claim 1, wherein the large current flowing through the metal is a one-peak pulse current, and the object to be vaporized is a plasma generating electrode. 3. A vapor deposition apparatus that vaporizes a metal and deposits it on an object to be vaporized, which has a pair of electrodes made of the metal, and vaporizes the metal by passing a large current between the electrodes and generating an arc. an arc generator, a plasma generator that generates plasma that sprays the vapor of the metal onto the object to be deposited, a first detector that detects the arc current of the arc generator, and a first detector that detects the arc current of the plasma generator; A vapor deposition device comprising: a second detector for detection; and a control device for controlling the arc current and the plasma current based on detection signals from the first detector and the second detector. Device. 4. A constant voltage power supply electrically connected to the electrode of the arc generator and the plasma electrode of the plasma generator, a current detector that detects the current flowing between the electrode and the plasma electrode, and a current detector that detects the current flowing between the electrode and the plasma electrode. It is characterized in that it has a drive device that is controlled by the control device via a detection signal from a detector and sends the metal so as to keep the distance between the pair of electrodes constant, and the arc current is a one-peak pulse current. A vapor deposition apparatus according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1751282A JPS58136775A (en) | 1982-02-08 | 1982-02-08 | Method and device for vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1751282A JPS58136775A (en) | 1982-02-08 | 1982-02-08 | Method and device for vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58136775A JPS58136775A (en) | 1983-08-13 |
| JPS6160913B2 true JPS6160913B2 (en) | 1986-12-23 |
Family
ID=11946014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1751282A Granted JPS58136775A (en) | 1982-02-08 | 1982-02-08 | Method and device for vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58136775A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL74360A (en) * | 1984-05-25 | 1989-01-31 | Wedtech Corp | Method of coating ceramics and quartz crucibles with material electrically transformed into a vapor phase |
| KR910009841B1 (en) * | 1985-09-30 | 1991-11-30 | 유니온 카바이드 코포레이션 | Apparatus and process for arc vapor depositing a coating in an evacuated chamber |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56509A (en) * | 1979-06-12 | 1981-01-07 | Nippon Soken Inc | Purifier for carbon fine particle |
| JPS5635768A (en) * | 1979-08-30 | 1981-04-08 | Inoue Japax Res Inc | Vapor depositing apparatus |
-
1982
- 1982-02-08 JP JP1751282A patent/JPS58136775A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56509A (en) * | 1979-06-12 | 1981-01-07 | Nippon Soken Inc | Purifier for carbon fine particle |
| JPS5635768A (en) * | 1979-08-30 | 1981-04-08 | Inoue Japax Res Inc | Vapor depositing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58136775A (en) | 1983-08-13 |
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