JPS6148211B2 - - Google Patents
Info
- Publication number
- JPS6148211B2 JPS6148211B2 JP12598779A JP12598779A JPS6148211B2 JP S6148211 B2 JPS6148211 B2 JP S6148211B2 JP 12598779 A JP12598779 A JP 12598779A JP 12598779 A JP12598779 A JP 12598779A JP S6148211 B2 JPS6148211 B2 JP S6148211B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- channel
- secondary electron
- resistor
- multiplication gain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007423 decrease Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
Landscapes
- Electron Tubes For Measurement (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Description
【発明の詳細な説明】
この発明はチヤネル型二次電子増倍装置に関
し、出力電流を大きくしたときに生じる増倍利得
の低下を改善したものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a channel type secondary electron multiplier, and is intended to improve the reduction in multiplication gain that occurs when the output current is increased.
直線状、スパイラル状、ウエーブ状、あるいは
平行平板状の各種形状からなるチヤネル型二次電
子増倍装置において、従来、二次電子の放出に寄
与するチヤネルは、その電流電圧特性が線型性を
示す二次電子放出能を有する抵抗体で構成されて
いた。この場合、単位時間当りの入射荷電粒子数
が増加して、出力電流がチヤネルに流れる素子電
流と同程度に大きくなると、増倍利得が低下する
ことはよく知られていることである。 Conventionally, in channel-type secondary electron multipliers that have various shapes such as linear, spiral, wave, or parallel plate shapes, the current-voltage characteristics of the channels that contribute to the emission of secondary electrons exhibit linearity. It was composed of a resistor that has the ability to emit secondary electrons. In this case, it is well known that when the number of incident charged particles per unit time increases and the output current becomes as large as the element current flowing through the channel, the multiplication gain decreases.
このような現象が発生する原因は次のように説
明できる。第１図は動作状態における二次電子増
倍装置に流れる各電流および電荷の流れを模式的
に示したものである。荷電粒子が入射しないと
き、チヤネルＣには素子固有の定常電流ｉdp（図
示せず）が流れる。次に、チヤネルＣの入力端１
側から粒子が入射すると二次電子放出現象が生
じ、素子電流の一部がチヤネルＣの内部に放出さ
れることになり、チヤネルＣの出力端２に近づく
ほどチヤネルＣ内の空間電流ｉs（Ｘ）が増え、
素子電流ｉd（Ｘ）が減少することになる。 The reason why such a phenomenon occurs can be explained as follows. FIG. 1 schematically shows the flow of each current and charge flowing through the secondary electron multiplier in an operating state. When no charged particles are incident, a steady current i dp (not shown) unique to the device flows through the channel C. Next, input end 1 of channel C
When particles are incident from the side, a secondary electron emission phenomenon occurs, and a part of the device current is emitted into the channel C, and the closer to the output end 2 of the channel C, the spatial current i s ( X) increases,
The element current i d (X) will decrease.
すなわち、第１図から明らかなように、次のよ
うな式が成り立つ。 That is, as is clear from FIG. 1, the following equation holds.
ｉ＋ｉi＝ｉs（Ｘ）＋ｉd（Ｘ）
ｉi≪ｉ
ｉp＝ｉs（ｌ）
ただし、
ｉ：チヤネル入力端に供給される電流
ｉi：入射粒子による電流
ｉs（Ｘ）：チヤネル内空間電流
ｉd（Ｘ）：素子電流
ｉp：出力電流
チヤネルＣの入力端をＸ＝０、チヤネルＣの出
力端をＸ＝ｌとする。 i + i i = i s (X) + i d (X) i i ≪ i i p = i s (l) where i: current supplied to the channel input end i i : current due to incident particles i s (X): Space current in channel i d (X): element current i p : output current Let the input end of channel C be X=0, and the output end of channel C be X=l.
したがつて、入射粒子数が少なくて、これに伴
なう出力電流ｉpがｉp≪ｉ〓ｉdpのときは、ｉd
（Ｏ）〓ｉd（ｌ）で、素子電流はチヤネルＣの全
長にわたつてほぼ一様である。 Therefore, when the number of incident particles is small and the accompanying output current i p satisfies i p ≪i〓i dp , i d
(O)〓i d (l), the element current is approximately uniform over the entire length of the channel C.
しかるに、入射粒子数が増大して出力電流が増
え、ｉp〓ｉになると、ｉd（Ｏ）＝ｉ、ｉd（ｌ）
＝ｉ−ｉpであるからｉd（ｌ）≪ｉd（Ｏ）とな
り、チヤネルＣの入力端付近にくらべて出力端付
近の素子電流が著るしく小さくなる。 However, when the number of incident particles increases and the output current increases and becomes i p 〓i, i d (O) = i, i d (l)
= i - i p , so i d (l) << i d (O), and the element current near the output end of channel C becomes significantly smaller than near the input end.
第２図において、破線は線型性を有する従来の
抵抗体よりなる二次電子増倍装置の電流−電位勾
配の特性を模型的に示したものである。上記した
ように、入射粒子数が増えて出力端付近のチヤネ
ルに流れる素子電流が小さくなると、従来の線型
性抵抗体よりなる二次電子増倍装置では電位勾配
も比例して小さくなり、その結果空間電荷効果に
より、増倍作用が十分に行われなくなり、増倍利
得が低下するのである。 In FIG. 2, the broken line schematically shows the current-potential gradient characteristics of a secondary electron multiplier made of a conventional linear resistor. As mentioned above, when the number of incident particles increases and the element current flowing through the channel near the output end decreases, in a conventional secondary electron multiplier made of a linear resistor, the potential gradient also decreases proportionally. Due to the space charge effect, the multiplication effect is not sufficiently performed, and the multiplication gain decreases.
したがつて、この発明は上記した従来の二次電
子増倍装置が有していた欠点を除去したもので、
チヤネル抵抗体の電流電圧特性において非線型性
をもたせることにより、出力電流を大きくしたと
きに生じる増倍利得の低下を改善したものであ
る。 Therefore, this invention eliminates the drawbacks of the conventional secondary electron multiplier described above.
By imparting nonlinearity to the current-voltage characteristics of the channel resistor, the decrease in multiplication gain that occurs when the output current is increased is improved.
このように増倍装置の電流電圧特性に非線型性
をもたせた場合、第２図の実線で示したように、
出力端付近において増倍作用が行われるために必
要な最小の電位勾配をElimitとすると、これに必
要な素子電流は従来の線型性の抵抗体ではＩLで
あるが、この発明による非線型性の抵抗体ではＩ
Lよりはるかに小さいＩNである。云い換えれば、
この発明では大きな出力電流になるまで増倍利得
の低下が起こらないと云える。 When the current-voltage characteristics of the multiplier are made nonlinear in this way, as shown by the solid line in Figure 2,
If Elimit is the minimum potential gradient required for multiplication to occur near the output terminal, the element current required for this is I L in the conventional linear resistor, but with the nonlinear resistor of this invention, the element current required for this is I L. In the resistor of I
I N is much smaller than L. In other words,
In this invention, it can be said that the multiplication gain does not decrease until the output current becomes large.
このことを確認するため、以下この発明を一実
施例に従つて説明する。 In order to confirm this, the present invention will be described below according to one embodiment.
非線型性を有する抵抗体を用いて作製したチヤ
ネル型二次電子増倍装置の電流電圧特性を第３図
において実線で示した。この増倍装置には、印加
電圧が4.5KVのとき素子電流が0.5μＡ流れるよ
うに、つまり９×109Ωの値を示す抵抗値を有す
るものを用いた。 The current-voltage characteristics of a channel-type secondary electron multiplier manufactured using a resistor having nonlinearity are shown by a solid line in FIG. This multiplier had a resistance value of 9×10 9 Ω so that an element current of 0.5 μA would flow when the applied voltage was 4.5 KV.
このような特性を有する増倍装置について、増
倍利得と出力電流の関係を測定したところ、第４
図の実線で示すような特性が得られた。第４図に
おいて、横軸は入射粒子がないときの素子固有の
電流ｉdpで規格化（ｉd／ｉdp）し、たて軸は出力
電流が十分に少ないときの増倍利得Ｇpで規格化
（Ｇ／Ｇp）した。また動作電圧は4.5KV、動作真
空度は1.6×10-6Torrに設定した。 When we measured the relationship between multiplication gain and output current for a multiplier with such characteristics, we found that the fourth
Characteristics as shown by the solid line in the figure were obtained. In Figure 4, the horizontal axis is normalized by the element-specific current i dp when there are no incident particles (i d /i dp ), and the vertical axis is the multiplication gain G p when the output current is sufficiently small. Normalized (G/G p ). The operating voltage was set to 4.5KV, and the operating vacuum level was set to 1.6×10 -6 Torr.
なお、比較参考として従来例、つまり線型性を
有する抵抗体を用いて作製したチヤネル型二次電
子増倍装置の電流電圧特性を第３図において破線
で示した。また、上記した実施例と同様に、増倍
利得と出力電流との関係を測定し、その結果を同
じく第４図において破線で示した。 As a comparative reference, the current-voltage characteristics of a conventional example, that is, a channel type secondary electron multiplier manufactured using a resistor having linearity, are shown by broken lines in FIG. Further, similarly to the above embodiment, the relationship between the multiplication gain and the output current was measured, and the results are also shown by the broken line in FIG.
第４図から明らかなように、従来のものでは出
力電流が素子電流と同程度になると、増倍利得が
急激に減少するが、この発明によれば素子電流と
同程度の出力電流ではまだ増倍利得の低下が見ら
れず、出力電流の大きいところで増倍利得が改善
されている。 As is clear from FIG. 4, in the conventional system, when the output current becomes about the same as the element current, the multiplication gain decreases rapidly, but according to the present invention, when the output current is about the same as the element current, the multiplication gain still increases. No decrease in the multiplication gain is observed, and the multiplication gain is improved at large output currents.
なお、この発明によれば増倍装置の形状はチヤ
ネル型であればよく、直線状、スパイラル状、ウ
エーブ状、あるいは平行平板状であつても、電流
電圧特性に非線型性をもたせれば同様な効果が得
られる。 According to the present invention, the shape of the multiplier may be a channel type, and the shape of the multiplier may be linear, spiral, wave, or parallel plate, as long as the current-voltage characteristics have nonlinearity. You can get the following effect.
以上のようにこの発明によれば、チヤネル型二
次電子増倍装置において、チヤネル抵抗体の電流
電圧特性を非線型性のものとすることにより、出
力電流を大きくしたときに生じる増倍利得の低下
を改善できるという効果を有しており、実用上き
わめて有用である。 As described above, according to the present invention, in a channel-type secondary electron multiplier, by making the current-voltage characteristics of the channel resistor nonlinear, the multiplication gain that occurs when the output current is increased is reduced. It has the effect of improving the decline, and is extremely useful in practice.
第１図はチヤネル型二次電子増倍装置の概略断
面図、第２図は二次電子増倍装置の電流−電位勾
配特性の模式図、第３図はこの発明にかかる二次
電子増倍装置の電流−電位勾配特性図、第４図は
同じく増倍利得−出力電流特性図である。
Fig. 1 is a schematic cross-sectional view of a channel type secondary electron multiplier, Fig. 2 is a schematic diagram of current-potential gradient characteristics of the secondary electron multiplier, and Fig. 3 is a secondary electron multiplier according to the present invention. The current-potential gradient characteristic diagram of the device, FIG. 4, is also a multiplication gain-output current characteristic diagram.
Claims (1)
ネル抵抗体の電流電圧特性が非線型性のものであ
ることを特徴とするチヤネル型二次電子増倍装
置。1. A channel-type secondary electron multiplier, characterized in that the current-voltage characteristics of a channel resistor are nonlinear.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12598779A JPS5650044A (en) | 1979-09-29 | 1979-09-29 | Channel type secondary electron amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12598779A JPS5650044A (en) | 1979-09-29 | 1979-09-29 | Channel type secondary electron amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5650044A JPS5650044A (en) | 1981-05-07 |
| JPS6148211B2 true JPS6148211B2 (en) | 1986-10-23 |
Family
ID=14923916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12598779A Granted JPS5650044A (en) | 1979-09-29 | 1979-09-29 | Channel type secondary electron amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650044A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5626234B2 (en) * | 2012-02-15 | 2014-11-19 | 株式会社オートネットワーク技術研究所 | Overcurrent protection device |
-
1979
- 1979-09-29 JP JP12598779A patent/JPS5650044A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5650044A (en) | 1981-05-07 |
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