JPS6146028B2 - - Google Patents

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Publication number
JPS6146028B2
JPS6146028B2 JP56052684A JP5268481A JPS6146028B2 JP S6146028 B2 JPS6146028 B2 JP S6146028B2 JP 56052684 A JP56052684 A JP 56052684A JP 5268481 A JP5268481 A JP 5268481A JP S6146028 B2 JPS6146028 B2 JP S6146028B2
Authority
JP
Japan
Prior art keywords
phosphor
film
fluorescent film
luminance
luminescent composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56052684A
Other languages
Japanese (ja)
Other versions
JPS57167381A (en
Inventor
Akyuki Kagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kasei Optonix Ltd
Original Assignee
Kasei Optonix Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kasei Optonix Ltd filed Critical Kasei Optonix Ltd
Priority to JP5268481A priority Critical patent/JPS57167381A/en
Publication of JPS57167381A publication Critical patent/JPS57167381A/en
Publication of JPS6146028B2 publication Critical patent/JPS6146028B2/ja
Granted legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]

Landscapes

  • Luminescent Compositions (AREA)

Abstract

PURPOSE:A luminescent composition emitting red light with high luminance with a low-speed electron beam excitation, which is prepd. by mixing a silver- activated zinc cadmium sulfide fluorescent material with indium oxide. CONSTITUTION:A luminescent composition prepd. by mixing a silver-activated zinc cadmium sulfide fluorescent material, (Zn1-x, Cdx)S:AG, composed of a mother substance consisting of zinc cadmium sulfide, (Zn1-x, Cdx)S (wherein 0.65<=x<=1.0), and contg. as an activator 2X10<-4>-10<-2>g silver per g of said mother substance with indium oxide in a wt. ratio of 7:3-99:1. Said Ag-activated zinc cadmium sulfide fluorescent material which is more highly activated with Ag than the conventional one is enhanced in luminance by baking according to screen printing, and further markedly enhanced by adding an adequate amt. of In2O3.

Description

【発明の詳細な説明】 本発明は低速電子線励起下で高輝度の赤色発光
を示す発光組成物に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a luminescent composition that exhibits high-intensity red light emission under slow electron beam excitation.

従来、加速電圧が100V以下の低速電子線の励
起によつて高揮度に発光する螢光体として亜鉛付
活酸化亜鉛螢光体(ZnO:Zn)がよく知られてい
る。このZnO:Zn螢光体は低速電子線で励起した
場合高輝度の緑白色発光を示し、低速電子線励起
螢光表示管の螢光膜として実用されている。
Conventionally, zinc-activated zinc oxide phosphor (ZnO:Zn) is well known as a phosphor that emits light with high volatility when excited by a slow electron beam with an accelerating voltage of 100 V or less. This ZnO:Zn phosphor emits high-intensity green-white light when excited by a slow electron beam, and is used as a fluorescent film for fluorescent display tubes excited by slow electron beams.

低速電子線励起螢光表示管(以下「螢光表示
管」と略称する)は基本的には片面に螢光膜を有
する陽極プレートと、上記螢光膜に対向するよう
に設けられた陰極とを、その内部が真空で容器内
に封入したものであり、陰極から放射される低速
電子線(一般に加速電圧が100V以下の低速電子
線)によつて陽極プレート上の螢光膜を励起して
発光せしめるものである。上記ZnO:Zn螢光体か
らなる螢光膜を有する螢光表示管は卓上電子計算
器、各種計測機器等の表示素子として広く利用さ
れている。
A low-speed electron beam-excited fluorescent display tube (hereinafter abbreviated as a "fluorescent display tube") basically consists of an anode plate having a fluorescent film on one side, and a cathode opposite the fluorescent film. is sealed in a container with a vacuum inside, and the fluorescent film on the anode plate is excited by a slow electron beam (generally a slow electron beam with an accelerating voltage of 100V or less) emitted from the cathode. It causes light to emit light. Fluorescent display tubes having a fluorescent film made of the ZnO:Zn phosphor described above are widely used as display elements in desktop electronic calculators, various measuring instruments, and the like.

近年、螢光表示管の利用分野が拡大されるにつ
れて螢光表示管の発光色の多様化が望まれるよう
になり、低速電子線励起下で緑色以外の発光を螢
光体の開発が盛んに進められてきた。その結果、
低速電子線励起下で緑色以外の高輝度の発光を示
す螢光体がいくつか見出されたが、それら螢光体
のうちの1種にその組成式が (Zn1-x,Cdx)S:Ag (但し、xは0.65≦x≦1なる条件を満たす数
である。以下同様である。) で表わされる銀付活硫化亜鉛カドミウム螢光体が
ある。
In recent years, as the field of use of fluorescent display tubes has expanded, it has become desirable to diversify the emission colors of fluorescent display tubes, and the development of fluorescent materials that emit light other than green under slow electron beam excitation has become active. It has been progressing. the result,
Several phosphors have been found that emit high-brightness colors other than green under excitation with slow electron beams, and one of these phosphors has the composition formula (Zn 1-x , Cd x ). There is a silver-activated zinc sulfide cadmium phosphor represented by S:Ag (where x is a number satisfying the condition 0.65≦x≦1. The same applies hereinafter).

特開昭53−132489号に開示されているように、
上記(Zn1-x,Cdx)S:Ag螢光体は低速電子線
励起下で赤色発光を示し、Ag付活量が(Zn1-x
Cdx)S母体1gに対して8×10-5乃至3×10-4
gである時特に高輝度の発光を示す。そしてAg
付活量が上記範囲内にある(Zn1-x,Cdx)S:
Ag螢光体からなる螢光膜を有する赤色発光螢光
表示管は表元素子として実用されている。
As disclosed in Japanese Patent Application Laid-Open No. 53-132489,
The above (Zn 1-x , Cd x )S:Ag phosphor emits red light under slow electron beam excitation, and the Ag activation amount is
Cd x ) 8×10 -5 to 3×10 -4 for 1 g of S matrix
g, it emits particularly high brightness. and Ag
(Zn 1-x , Cd x ) S whose activation amount is within the above range:
A red-emitting fluorescent display tube having a fluorescent film made of Ag phosphor has been put to practical use as a display element.

ところで螢光表示管の製造に際して陽極プレー
ト上に螢光膜を形成するのに、従来は螢光体を水
中に分散させた懸濁液中に陽極プレートを置き、
螢光体の自重によつて螢光体を陽極プレート上に
沈降させた後水を除去して塗膜を乾燥させる、い
わゆる沈降塗布法が採用されている。上記従来実
用の赤色発光螢光表示管の製造においても、陽極
プレート上に(Zn1-x,Cdx)S:Ag螢光体から
なる螢光膜を形成するのにこの沈降塗布法が用い
られている。沈降塗布法による(Zn1-x,Cdx
S:Ag螢光体からなる螢光膜の形成については
上記特開昭53−132489号に詳細に説明されてい
る。
By the way, in order to form a fluorescent film on an anode plate during the production of fluorescent display tubes, conventionally the anode plate was placed in a suspension of phosphor dispersed in water.
A so-called sedimentation coating method is used, in which the phosphor is allowed to settle on the anode plate by its own weight, and then the water is removed and the coating is dried. In the production of the conventional red-emitting fluorescent display tube mentioned above, this precipitation coating method is also used to form a phosphor film made of (Zn 1-x , Cd x )S:Ag phosphor on the anode plate. It is being By sedimentation coating method (Zn 1-x , Cd x )
The formation of a fluorescent film made of S:Ag phosphor is described in detail in the above-mentioned Japanese Patent Laid-Open No. 132489/1989.

最近、螢光表示管の製造に際して陽極プレート
上に螢光膜を形成するのに、製造が容易である等
の理由から上記沈降塗布法に代わつてスクリーン
印刷法が採用されるようになつた。このスクリー
ン印刷法は螢光体を適当な有機バインダーと混合
して螢光体インクを調製し、この螢光体インクを
謄写版刷りの方法で陽極プレート上に印刷した
後、得られた塗膜を400乃至500℃の温度でベーキ
ングし有機バインダーを除去して螢光膜を形成す
る方法である。しかしながら、従来沈降塗布法に
よつて螢光膜とされていたAg付活量が(Zn1-x
Cdx)S母体1gに対して8×10-5乃至3×10-4
gである(Zn1-x,Cdx)S:Ag螢光体はスクリ
ーン印刷法によつて螢光膜とされる場合、ベーキ
ングによつてその発光揮度が著しく低下すること
が判明した。従つて低速電子線励起下で高輝度の
発光を示すと同時に、スクリーン印刷法によつて
螢光膜とする場合ベーキングによつて発光輝度が
低下しないような(Zn1-x,Cdx)S:Ag螢光体
が強く望まれている。
Recently, screen printing has come to be used in place of the precipitation coating method to form a fluorescent film on an anode plate in the production of fluorescent display tubes due to ease of production. This screen printing method involves preparing a phosphor ink by mixing a phosphor with a suitable organic binder, printing the phosphor ink on an anode plate by mimeographing, and then printing the resulting coating. This method involves baking at a temperature of 400 to 500°C to remove the organic binder and form a fluorescent film. However, the Ag activation amount (Zn 1-x ,
Cd x ) 8×10 -5 to 3×10 -4 for 1 g of S matrix
It has been found that when a (Zn 1-x , Cd x )S:Ag phosphor is formed into a phosphor film by screen printing, its luminous volatility is significantly reduced by baking. Therefore, (Zn 1-x , Cd :Ag phosphor is strongly desired.

本発明は上述のような状況に鑑みてなされたも
のであり、低速電子線励起下で高輝度の発光を示
し、またスクリーン印刷法によつて螢光表示管の
螢光膜とする場合、ベーキングによつて発光輝度
が低下しないような(Zn1-x,Cdx)S:Ag螢光
体を提供することを目的とするものである。
The present invention has been made in view of the above-mentioned circumstances, and exhibits high-intensity light emission under low-speed electron beam excitation. The object of the present invention is to provide a (Zn 1-x , Cd x )S:Ag phosphor whose emission brightness does not decrease due to oxidation.

本発明者は上記目的を達成するため(Zn1-x
Cdx)S:Ag螢光体について種々の研究を行なつ
た。その結果、従来赤色発光螢光表示管の螢光膜
として実用されているAg付活量が(Zn1-x
Cdx)S母体1gに対して8×10-5乃至3×10-4
gである(Zn1-x,Cdx)S:Ag螢光体よりもAg
付活濃度が高い(Zn1-x,Cdx)S:Ag螢光体は
意外なことにスクリーン印刷法におけるベーキン
グによつて発光輝度が低下するどころかむしろ向
上することを見出し、またこのAg付活濃度の高
い(Zn1-x,Cdx)S:Ag螢光体に適当量の酸化
インジウム(In2O3)を添加混合する場合にはベー
キングによつて該螢光体の発光輝度がさらに向上
することを見出し、これらの発見に基づいて本発
明を完成させるに至つた。
In order to achieve the above object, the present inventor (Zn 1-x ,
We conducted various studies on Cd x ) S:Ag phosphors. As a result, the amount of Ag activation that has been used in the fluorescent film of conventional red-emitting fluorescent display tubes has been reduced to (Zn 1-x ,
Cd x ) 8×10 -5 to 3×10 -4 for 1 g of S matrix
(Zn 1-x , Cd x )S: Ag than Ag phosphor
Surprisingly, we found that the luminance of S:Ag phosphors with high activation concentrations (Zn 1-x , Cd x ) increases rather than decreases when baked in the screen printing process. When adding and mixing an appropriate amount of indium oxide (In 2 O 3 ) to a (Zn 1-x , Cd x ) S:Ag phosphor with a high active concentration, baking increases the luminance of the phosphor. They have found that there can be further improvements, and have completed the present invention based on these discoveries.

本発明の発光組成物は(Zn1-x,Cdx)S母体
1gに対して3×10-4乃至5×10-3gのAgが付
活された(Zn1-x,Cdx)S:Ag螢光体とIn2O3
を7:3乃至99:1の重量比で混合したことを特
徴とするものである。
In the luminescent composition of the present invention, 3×10 −4 to 5×10 −3 g of Ag was activated with respect to 1 g of the (Zn 1-x , Cd x )S matrix (Zn 1-x , Cd x ). S:Ag phosphor and In 2 O 3 are mixed at a weight ratio of 7:3 to 99:1.

本発明の発光組成物の一方の構成成分である
(Zn1-x,Cdx)S:Ag螢光体は一般に以下に述べ
るような方法によつて製造される。すなわち硫化
亜鉛(ZnS)生粉と硫化カドミウム(CdS)生粉
とを、CdS生粉xモルに対してZnS生粉が(1−
x)モルとなる割合(但し0.65≦x≦1である)
で混合してなる混合硫化物生粉に塩化銀
(AgCl)、硝酸銀(AgNO3)等の銀化合物を所定
量混合し、場合によつてはさらに塩化ナトリウム
(NaCl)等の融剤を適当量添加し、硫化水素雰囲
気、硫黄零囲気等の硫化性雰囲気中で800乃至
1200℃の温度で1乃至5時間焼成することによつ
て得られる。この(Zn1-x,Cdx)S:Ag螢光体
の付活剤Ag量は母体(Zn1-x,Cdx)S1gに対し
て3×10-4乃至5×10-3gである。なお、xの値
が0.65より小さい(Zn1-x,Cdx)S:Ag螢光体
は低速電子線励起下での発光輝度が著しく低く、
また発光色が赤色でないので本発明の発光組成物
の構成成分としては好ましくない。なお、付活剤
であるAgの原料としてハロゲン化銀(例えば
AgCl)を使用する場合、あるいは融剤としてハ
ロゲン化物(例えばNaCl)を使用する場合はハ
ロゲンの一部が螢光体中に残存する。
The (Zn 1-x , Cd x )S:Ag phosphor, which is one of the components of the luminescent composition of the present invention, is generally produced by the method described below. That is, when zinc sulfide (ZnS) raw powder and cadmium sulfide (CdS) raw powder are mixed, ZnS raw powder is (1-
x) Proportion of moles (0.65≦x≦1)
A predetermined amount of silver compounds such as silver chloride (AgCl) and silver nitrate (AgNO 3 ) are mixed into the raw mixed sulfide powder, and in some cases, an appropriate amount of a fluxing agent such as sodium chloride (NaCl) is added. 800 to 800 in a sulfidic atmosphere such as a hydrogen sulfide atmosphere or a sulfur-free atmosphere.
It is obtained by firing at a temperature of 1200°C for 1 to 5 hours. The amount of activator Ag in this (Zn 1-x , Cd x )S:Ag phosphor is 3 x 10 -4 to 5 x 10 -3 g per 1 g of matrix (Zn 1-x , Cd x )S. be. Note that the S:Ag phosphor with an x value smaller than 0.65 (Zn 1-x , Cd x ) has extremely low emission brightness under slow electron beam excitation;
Furthermore, since the luminescent color is not red, it is not preferable as a component of the luminescent composition of the present invention. Note that silver halide (e.g.
When using a phosphor (AgCl) or a halide (eg, NaCl) as a fluxing agent, some of the halogen remains in the phosphor.

本発明の発光組成物のもう一方の構成成分であ
るIn2O3としては一般試薬のIn2O3、あるいは一般
試薬のIn2O3もしくは硫酸塩、硝酸塩、塩化物等
の高温で容易にIn2O3に変わりうるインジウム化
合物を空気中、中性雰囲気中、あるいは弱還元性
雰囲気中で1500℃以下の温度で焼成して得た焼成
In2O3が用いられる。In2O3は平均粒子径が2乃至
10μのものを用いるのが好ましく、篩などによつ
て粒子径をそろえたものを用いるのがより好まし
い。
In 2 O 3 , which is the other component of the luminescent composition of the present invention, may be In 2 O 3 , a general reagent, or In 2 O 3 , a general reagent, or a sulfate, nitrate, chloride, etc. that can be easily oxidized at high temperatures. Calcination obtained by firing an indium compound that can be converted to In 2 O 3 at a temperature of 1500℃ or less in air, a neutral atmosphere, or a weakly reducing atmosphere.
In 2 O 3 is used. In 2 O 3 has an average particle size of 2 to 2
It is preferable to use particles with a particle diameter of 10 μm, and it is more preferable to use particles with a uniform particle size using a sieve or the like.

本発明の発光組成物は上述の(Zn1-x,Cdx
S:Ag螢光体とIn2O3とをボールミル、ミキサ−
ミル等によつて充分混合することによつて得るこ
とができる。両者は(Zn1-x,Cdx)S:Ag/
In2O3の値が7/3乃至99/1の範囲となる重量比で混
合される。(Zn1-x,Cdx)S:Ag/In2O3の値が
7/3より小さい場合には発光組成物中の不発光成
分であるIn2O3による(Zn1-x,Cdx)S:Ag螢光
体の発光の吸収が大きくなるため発光輝度が低下
し、一方(Zn1-x,Cdx)S:Ag/In2O3の値が9
9/1より大きい場合には発光組成物は(Zn1-x
Cdx)S:Ag螢光体に近いものとなつてIn2O3
混合したことによる発光輝度の向上が見られなく
なる。発光輝度の点から(Zn1-x,Cdx)S:
Ag/In2O3の値は特に17/3乃至19/1の範囲にある
のが好ましい。
The luminescent composition of the present invention has the above-mentioned (Zn 1-x , Cd x )
S: Ag phosphor and In 2 O 3 are mixed in a ball mill and mixer.
It can be obtained by thorough mixing using a mill or the like. Both are (Zn 1-x , Cd x )S:Ag/
The weight ratio of In 2 O 3 is in the range of 7/3 to 99/1. (Zn 1-x , Cd x ) S: Ag/In 2 O 3 value is
If it is smaller than 7/3, the absorption of the light emitted by the (Zn 1-x , Cd x )S:Ag phosphor by In 2 O 3 , which is a non-luminescent component in the luminescent composition, increases and the luminance decreases. However, on the other hand, the value of (Zn 1-x , Cd x )S:Ag/In 2 O 3 is 9
If it is larger than 9/1, the luminescent composition is (Zn 1-x ,
Cd x )S: It becomes close to an Ag phosphor, and no improvement in luminance due to the addition of In 2 O 3 is observed. From the point of view of luminance (Zn 1-x , Cd x )S:
The value of Ag/In 2 O 3 is particularly preferably in the range 17/3 to 19/1.

図面は(Zn0.2,Cd0.8)S:Ag螢光体を使用し
た螢光膜を有する螢光表示管における(Zn0.2
Cd0.8)S:Ag螢光体のAg付活量と螢光膜の発光
輝度との関係を示すグラフであり、曲線a,bお
よびcはそれぞれ螢光膜が(Zn0.2,Cd0.8)S:
Ag螢光体のみからなり、該螢光膜が沈降塗布法
によつて形成された場合、螢光膜が(Zn0.2
Cd0.8)S:Ag螢光体のみからなり該螢光膜がス
クリーン印刷法によつて形成された場合(ベーキ
ング温度は500℃)、および螢光膜が(Zn0.2
Cd0.8)S:Ag螢光体とIn2O3とを9:1の重量
比で混合した発光組成物からなり該螢光膜がスク
リーン印刷法によつて形成された場合(ベーキン
グ温度は500℃)である。なお図面において発光
輝度(縦軸)は相対値で表わされており、またい
ずれの螢光膜も加速電圧が50Vの低速電子線で励
起された。
The drawing shows (Zn 0.2 , Cd 0.8 ) in a fluorescent display tube with a phosphor film using S : Ag phosphor.
Cd 0 . 8 ) S: This is a graph showing the relationship between the Ag activation amount of the Ag phosphor and the luminescence brightness of the phosphor film. Curves a, b and c indicate that the phosphor film is Cd 0.8 )S :
When the phosphor film is composed of only Ag phosphor and is formed by a precipitation coating method, the phosphor film consists of (Zn 0 . 2 ,
Cd 0 . 8 ) S: When the phosphor film is made of only Ag phosphor and is formed by screen printing method (baking temperature is 500°C), and when the phosphor film is made of (Zn 0 . 2 ,
Cd 0.8 ) S:Ag phosphor and In 2 O 3 are mixed in a weight ratio of 9:1, and the phosphor film is formed by a screen printing method (baking temperature is 500℃). In the drawings, the emission brightness (vertical axis) is expressed as a relative value, and each fluorescent film was excited by a slow electron beam with an accelerating voltage of 50V.

曲線aから明らかなように、(Zn0.2,Cd0.8
S:Ag螢光体は沈降塗布法によつて螢光膜とさ
れる場合、すなわちベーキングが施されない場
合、Ag付活量が(Zn0.2,Cd0.8)S母体1gに対
して8×10-5乃至3×10-4gである時高輝度の発
光を示し、特にAg付活量が(Zn0.2,Cd0.8)S母
体1gに対して約1.5×10-4gである時最大発光
輝度を示す。先に説明したように、Ag付活量が
(Zn0.2,Cd0.8)S母体1gに対して8×10-5乃至
3×10-4gである(Zn0.2,Cd0.8)S:Ag螢光体
は従来赤色発光螢光表示管の螢光膜として実用さ
れている。しかしながら曲線bから明らかなよう
に、上記従来実用の(Zn0.2,Cd0.8)S:Ag螢光
体はスクリーン印刷法によつて螢光膜とされる場
合、すなわちベーキングが施される場合、発光輝
度が低下する。ところが曲線bから明らかなよう
に、上記従来実用の(Zn0.2,Cd0.8)S:Ag螢光
体よりもAg付活濃度が高い(Zn0.2,Cd0.8)S:
Ag螢光体(発光輝度が低いために従来実用され
ていなかつた)は意外にもスクリーン印刷法によ
つて螢光膜とされる場合、すなわちベーキングが
施される場合、発光輝度が低下するどころかむし
ろ著しく向上する。そしてAg付活量が(Zn0.2
Cd0.8)S母体1gに対して8×10-4乃至5×
10-3gである(Zn0.2,Cd0.8)S:Ag螢光体はス
クリーン印刷法によつて螢光膜とされる場合、上
記従来実用の(Zn0.2,Cd0.8)S:Ag螢光体の最
大発光輝度と同等もしくはそれ以上の発光輝度を
示す。
As is clear from curve a, (Zn 0 . 2 , Cd 0 . 8 )
S: When the Ag phosphor is made into a phosphor film by the precipitation coating method, that is, when baking is not performed, the Ag activation amount is (Zn 0. 2 , Cd 0. 8 ) per 1 g of S matrix. When the concentration is 8×10 -5 to 3×10 -4 g, high luminance is exhibited, and in particular, the Ag activation amount is approximately 1.5× 10 - per 1 g of S matrix (Zn 0.2 , Cd 0.8 ). Maximum luminance is achieved at 4 g. As explained earlier, the Ag activation amount is 8×10 -5 to 3× 10 -4 g per 1 g of ( Zn 0.2 , Cd 0.8 )S matrix . 0.8 ) S:Ag phosphor has conventionally been put to practical use as a phosphor film for red-emitting fluorescent display tubes. However, as is clear from curve b, when the conventional practical (Zn 0.2 , Cd 0.8 ) S:Ag phosphor is made into a phosphor film by screen printing, that is, it is not subjected to baking . In this case, the luminance of the emitted light decreases. However , as is clear from curve b, the Ag activation concentration is higher than that of the conventional practical (Zn 0.2 , Cd 0.8 ) S: Ag phosphor . :
Surprisingly, when Ag phosphors (which have not been put to practical use due to their low luminance) are made into a phosphor film by screen printing, that is, when they are baked, their luminance does not decrease; In fact, it improves significantly. And the Ag activation amount is (Zn 0.2 ,
Cd 0.8 ) 8×10 -4 to 5× per 1 g of S matrix
When the (Zn 0.2 , Cd 0.8 ) S:Ag phosphor with 10 -3 g is made into a phosphor film by screen printing, the conventional practical (Zn 0.2 , Cd 0.8) .8 ) S: Shows luminance equal to or higher than the maximum luminance of Ag phosphor.

このように従来実用の(Zn0.2,Cd0.8)S:Ag
螢光体よりもAg付活濃度が高い(Zn0.2,Cd0.8
S:Ag螢光体の発光輝度はスクリーン印刷法に
おけるベーキングによつて向上するが、この発光
輝度の向上は該螢光体にIn2O3を適当量混合する
ことによつて助長される。その様子は曲線cによ
つて示される。
In this way , conventionally practical (Zn 0.2 , Cd 0.8 ) S:Ag
Ag activation concentration is higher than that of phosphor (Zn 0.2 , Cd 0.8 )
The luminance of the S:Ag phosphor is improved by baking in the screen printing process, and this improvement in luminance is facilitated by mixing an appropriate amount of In 2 O 3 into the phosphor. This situation is shown by curve c.

なお曲線aと曲線bの比較から明らかなよう
に、Ag付活量が(Zn0.2,Cd0.8)S母体1gに対
して2×10-4乃至3×10-4gである(Zn0.2
Cd0.8)S:Ag螢光体はスクリーン印刷法によつ
て螢光膜とされる場合、発光輝度が低下する。し
かしながら曲線cから明らかなように、Ag付活
量が上記範囲にある(Zn0.2,Cd0.8)S:Ag螢光
体にIn2O3を混合することによる該螢光体の発光
輝度の向上はスクリーン印刷法によつて螢光膜と
されることによる発光輝度の低下よりも大きなも
のであり、従つてAg付活量が上記範囲にある
(Zn0.2,Cd0.8)S:Ag螢光体にIn2O3を混合した
発光組成物はスクリーン印刷法によつて螢光膜さ
れる場合、ベーキングが施されていないAg付活
量が同じである(Zn0.2,Cd0.8)S:Ag螢光体
(曲線a)よりも高輝度の発光を示す。そして曲
線cと曲線aから明らかなように、Ag付活量が
(Zn0.2,Cd0.8)S1gに対して3×10-4乃至5×
10-3gである(Zn0.2,Cd0.8)S:Ag螢光体と
In2O3とを混合した発光組成物はスクリーン印刷
法によつて螢光膜とされる場合、上記従来実用の
(Zn0.2,Cd0.8)S:Ag螢光体の最大発光輝度以
上の発光輝度を示す。本発明の発光組成物に用い
られる(Zn1-x,Cdx)S:Ag螢光体のAg付活量
が(Zn1-x,Cdx)S母体1gに対して3×10-4
至5×10-3gと限定されるのはこのような知見に
基づいてである。
As is clear from the comparison between curve a and curve b, the Ag activation amount is 2× 10 -4 to 3×10 -4 g per 1 g of (Zn 0.2 , Cd 0.8 )S matrix. (Zn 0.2 ,
Cd 0 . 8 ) When the S:Ag phosphor is formed into a phosphor film by screen printing, the luminance of the light emission decreases. However, as is clear from curve c, the S:Ag phosphor whose Ag activation amount is in the above range (Zn 0.2 , Cd 0.8 ) can be mixed with In 2 O 3 to The improvement in luminance is greater than the decrease in luminance due to the formation of a fluorescent film by screen printing, and therefore the Ag activation amount is within the above range (Zn 0.2 , Cd 0 . 8 ) When a luminescent composition containing S:Ag phosphor mixed with In 2 O 3 is formed into a phosphor film by screen printing, the activation amount of Ag without baking is the same (Zn 0 .2 , Cd 0.8 ) S: Shows higher luminance than the Ag phosphor (curve a). As is clear from curves c and a, the Ag activation amount (Zn 0 . 2 , Cd 0 . 8 ) is 3×10 -4 to 5× with respect to S1g.
10 -3 g (Zn 0.2 , Cd 0.8 ) S:Ag phosphor and
When the luminescent composition mixed with In 2 O 3 is made into a fluorescent film by screen printing, the maximum luminescence of the conventional practical (Zn 0.2 , Cd 0.8 )S:Ag phosphor mentioned above Indicates luminescence brightness that is higher than luminance. The Ag activation amount of the (Zn 1-x , Cd x )S:Ag phosphor used in the luminescent composition of the present invention is 3×10 -4 with respect to 1 g of the (Zn 1-x , Cd x )S matrix. It is based on this knowledge that the amount is limited to 5×10 -3 g.

なお、(Zn1-x,Cdx)S:Ag螢光体にIn2O3
適当量混合することによつて(Zn1-x,Cdx
S:Ag螢光体の低速電子線励起下における発光
輝度が向上するのは、(Zn1-x,Cdx)S:Ag螢光
体に比較して導電性の高いIn2O3を混合すること
によつて(Zn1-x,Cdx)S:Ag螢光体の導電性
が向上し、このために低速電子線で励起する場合
(Zn1-x,Cdx)S:Ag螢光体がチヤージアツプ現
象を示さなくなり、(Zn1-x,Cdx)S:Ag螢光体
の励起効率が向上するためであると考えられる。
In addition, by mixing an appropriate amount of In 2 O 3 into the (Zn 1-x , Cd x )S:Ag phosphor, (Zn 1-x , Cd x )
The emission brightness of the S:Ag phosphor under slow electron beam excitation is improved by mixing In 2 O 3 , which has higher conductivity than the (Zn 1-x , Cd x )S:Ag phosphor. The conductivity of the (Zn 1 -x , Cd x )S:Ag phosphor is improved by This is thought to be because the phosphor no longer exhibits a charge-up phenomenon and the excitation efficiency of the (Zn 1-x , Cd x )S:Ag phosphor is improved.

以上(Zn0.2,Cd0.8)S:Ag螢光体および
(Zn0.2,Cd0.8)S:Ag/In2O3の値が9/1である
発光組成物について詳述したが、xが0.8以外の
(Zn1-x,Cdx)S:Ag螢光体およびxが0.8以外
の(Zn1-x,Cdx)S:Ag螢光体とIn2O3との混合
物からなる発光組成物についても、(Zn1-x
Cdx)S:Ag螢光体のAg付活量と、ベーキング
の前後における低速電子線励起下での相対発光輝
度との関係は(Zn0.2,Cd0.8)S:Ag螢光体およ
び(Zn0.2,Cd0.8)S:Ag/In2O3の値が9/1であ
る発光組成物の場合と同様の傾向にあり、また
(Zn0.2,Cd0.8)S:Ag/In2O3の値が7/3乃至99/
1の範囲内で変化しても(Zn1-x,Cdx)S:Ag螢
光体のAg付活量と発光輝度との関係はほとんど
変化しないことが確認された。
Regarding the above (Zn 0.2 , Cd 0.8 ) S : Ag phosphor and the (Zn 0.2 , Cd 0.8 ) S:Ag/In 2 O 3 value of 9/1, the luminescent composition As described in detail, (Zn 1-x , Cd x ) S:Ag phosphor with x other than 0.8 and (Zn 1-x , Cd x ) S:Ag phosphor with x other than 0.8 and In 2 O Regarding the luminescent composition consisting of a mixture with (Zn 1-x ,
The relationship between the Ag activation amount of Cd (Zn 0.2 , Cd 0.8 ) S:Ag / In 2 O 3 of 9/1 . .8 ) S: Ag/In 2 O 3 value is 7/3 to 99/
It was confirmed that even if (Zn 1-x , Cd x ) was changed within the range of 1, the relationship between the Ag activation amount and luminance of the S:Ag phosphor did not change much.

以上説明したように、本発明はスクリーン印刷
法によつて螢光表示管の螢光膜とされる場合高輝
度の発光を螢光膜を与える発光組成物を提供する
ものである。本発明の発光組成物は従来赤色発光
螢光表示管の螢光膜として実用されていた
(Zn1-x,Cdx)S:Ag螢光体に代わるものとして
その工業的利用価値は大きなものである。
As explained above, the present invention provides a luminescent composition which, when formed into a fluorescent film for a fluorescent display tube by screen printing, provides a fluorescent film that emits high-intensity light. The luminescent composition of the present invention has great industrial utility value as a substitute for the (Zn 1-x , Cd x )S:Ag phosphor that has been used as a fluorescent film for conventional red-emitting fluorescent display tubes. It is.

次に実施例によつて本発明を説明する。 Next, the present invention will be explained with reference to Examples.

実施例 1 Ag付活量が(Zn0.2,Cd0.8)S母体1gに対し
て10-3gである(Zn0.2,Cd0.8)S:Ag螢光体9
重量部と、平均粒子径3μのIn2O3粉末(守隨彦
太郎商店製試薬)1重量部とを、ボールミルで充
分混合して(Zn0.2,Cd0.8)S:Ag/In2O3の混
合重量比が9/1である発光組成物を得た。
Example 1 (Zn 0.2 , Cd 0.8 )S : Ag phosphor 9 with Ag activation amount of 10 −3 g per 1 g of ( Zn 0.2 , Cd 0.8 )S matrix
parts by weight and 1 part by weight of In 2 O 3 powder with an average particle size of 3 μm (reagent manufactured by Hikotaro Moritake Shoten) were sufficiently mixed in a ball mill to obtain (Zn 0.2 , Cd 0.8 ) S:Ag/In . A luminescent composition having a mixing weight ratio of 2 O 3 of 9/1 was obtained.

このようにして得た発光組成物20gをジアセト
ンアルコール10gとニトロセルロース0.1gから
なるバインダーと共にボールミルで充分に混練し
て発光組成物インクを調製した。次に300メツシ
ユのテトロン製網状スクリーンを用いて2cm平方
のアルミニウム製陽極プレートの片側全面にベー
キング後の塗布密度が約3mg/cm2となるように上
記発光組成物インクを印刷した後、塗膜を500℃
の温度に保つた電気炉中で30分間ベーキングして
バインダーを分解除去し、螢光膜(以下螢光膜A
という)を形成した。
A luminescent composition ink was prepared by thoroughly kneading 20 g of the luminescent composition thus obtained with a binder consisting of 10 g of diacetone alcohol and 0.1 g of nitrocellulose in a ball mill. Next, the luminescent composition ink was printed on one side of a 2 cm square aluminum anode plate using a 300 mesh Tetron mesh screen so that the coating density after baking was about 3 mg/cm 2 , and then the coating film was applied. 500℃
The binder was decomposed and removed by baking for 30 minutes in an electric furnace kept at a temperature of
) was formed.

これとは別に比較のため、Ag付活量が
(Zn0.2,Cd0.8)S母体1gに対して1.5×10-4
である(Zn0.2,Cd0.8)S:Ag螢光体100mgを
0.01%の水ガラスを含む蒸留水100c.c.中に分散さ
せた懸濁液を用いて、沈降塗布法によつて2cm平
方のアルミニウム製陽極プレートの片側全面に乾
燥後の塗布密度が約3mg/cm2となるように上記
(Zn0.2,Cd0.8)S:Ag螢光体を沈降塗布した
後、これを100℃で30分間乾燥して螢光膜(以
下、螢光膜Rという)を形成した。
Separately, for comparison, the Ag activation amount was 1.5×10 -4 g per 1 g of (Zn 0.2 , Cd 0.8 ) S matrix .
(Zn 0.2 , Cd 0.8 ) S:Ag phosphor 100mg
Using a suspension dispersed in 100 c.c. of distilled water containing 0.01% water glass, a coating density of approximately 3 mg after drying was applied to one side of a 2 cm square aluminum anode plate by the sedimentation coating method. After coating the above (Zn 0 . 2 , Cd 0 . R) was formed.

上述のようにして得た螢光膜Aおよび螢光膜R
を50Vの低速電子線で励起した時、螢光膜Aは螢
光膜Rの約1.7倍の発光輝度を示した。
Fluorescent film A and fluorescent film R obtained as described above
When excited with a slow electron beam of 50V, fluorescent film A exhibited luminance approximately 1.7 times that of fluorescent film R.

実施例 2 Ag付活量が(Zn0.2,Cd0.8)S母体1gに対し
て5×10-3gである(Zn0.2,Cd0.8)S:Ag螢光
体を使用し、実施例1と同様にして得た
(Zn0.2,Cd0.8)S:Ag/In2O3の混合重量比が9/
1である発光組成物を用いること以外は実施例1
と同様にして2cm平方のアルミニウム製陽極プレ
ートの片側全面にスクリーン印刷法により螢光膜
(以下、螢光膜Bという)を形成した。
Example 2 (Zn 0.2 , Cd 0.8 )S : Ag phosphor with Ag activation amount of 5×10 −3 g per 1 g of ( Zn 0.2 , Cd 0.8 )S matrix (Zn 0 . 2 , Cd 0 . 8 ) obtained in the same manner as in Example 1 using
Example 1 except that the luminescent composition of Example 1 was used.
In the same manner as above, a fluorescent film (hereinafter referred to as fluorescent film B) was formed on one entire surface of a 2 cm square aluminum anode plate by screen printing.

上述のようにして得た螢光膜Bと実施例1で沈
降塗布法によつて形成した螢光膜Rとを50Vの低
速電子線で励起した時、螢光膜Bは螢光膜Rの約
1.3倍の発光輝度を示した。
When the fluorescent film B obtained as described above and the fluorescent film R formed by the precipitation coating method in Example 1 were excited with a 50V slow electron beam, the fluorescent film B was different from that of the fluorescent film R. about
It showed 1.3 times the luminescence brightness.

実施例 3 Ag付活量が(Zn0.2,Cd0.8)S母体1gに対し
て3×10-4gである(Zn0.2,Cd0.8)S:Ag螢光
体を使用し、実施例1と同様にして得た
(Zn0.2,Cd0.8)S:Ag/In2O3の混合重量比が9/
1である発光組成物を用いること以外は実施例1
と同様にして2cm平方のアルミニウム製陽極プレ
ートの片側全面にスクリーン印刷法により螢光膜
(以下螢光膜Cという)を形成した。
Example 3 (Zn 0.2 , Cd 0.8 )S : Ag phosphor with Ag activation amount of 3×10 -4 g per 1 g of ( Zn 0.2 , Cd 0.8 ) S matrix (Zn 0 . 2 , Cd 0 . 8 ) obtained in the same manner as in Example 1 using
Example 1 except that the luminescent composition of Example 1 was used.
In the same manner as above, a fluorescent film (hereinafter referred to as fluorescent film C) was formed on one entire surface of a 2 cm square aluminum anode plate by screen printing.

上述のようにして得た螢光膜Cと実施例1で沈
降塗布法によつて形成した螢光膜Rとを50Vの低
速電子線で励起した時、螢光膜Cは螢光膜Rの約
1.2倍の発光輝度を示した。
When the fluorescent film C obtained as described above and the fluorescent film R formed by the sedimentation coating method in Example 1 were excited with a 50V slow electron beam, the fluorescent film C was different from that of the fluorescent film R. about
The luminescence brightness was 1.2 times higher.

実施例 4 Ag付活量が(Zn0.25,Cd0.75)S母体1gに対
して8×10-4gである(Zn0.25,Cd0.75)S:Ag
螢光体17重量部と、In2O3試薬(守隨彦太郎商店
製)を空気中で1400℃の温度で1時間焼成後篩に
かけて粒子径をそろえて得た平均粒子径5μの焼
成In2O33重量部とを使用し、実施例1と同様にし
て得た(Zn0.25,Cd0.75)S:Ag/In2O3の混合
重量比が17/3である発光組成物を用いること以外
は実施例1と同様にして2cm平方のアルミニウム
製陽極プレートの片側全面にスクリーン印刷法に
より螢光膜(以下螢光膜Dという)を形成した。
Example 4 (Zn 0.25 , Cd 0.75 )S: Ag with Ag activation amount of 8×10 -4 g per 1 g of (Zn 0.25 , Cd 0.75 ) S matrix
Calcined In 2 with an average particle size of 5μ was obtained by baking 17 parts by weight of the phosphor and In 2 O 3 reagent (manufactured by Morizuki Hikotaro Shoten) in air at a temperature of 1400°C for 1 hour, and then sieving to make the particle size uniform. (Zn 0.25 , Cd 0.75 ) obtained in the same manner as in Example 1 using 3 parts by weight of O 3 and a luminescent composition in which the mixing weight ratio of (Zn 0.25 , Cd 0.75 ):Ag/In 2 O 3 was 17/3. A fluorescent film (hereinafter referred to as fluorescent film D) was formed on one entire surface of a 2 cm square aluminum anode plate by screen printing in the same manner as in Example 1 except that a fluorescent film was used.

これとは別に比較のため、Ag付活量が
(Zn0.25,Cd0.75)S母体1gに対して1.5×10-4
である(Zn0.25,Cd0.75)S:Ag螢光体を使用す
ること以外は実施例1の螢光膜形成法と同様にし
て2cm平方のアルミニウム製陽極プレートの片側
全面に沈降塗布法によつて螢光膜(以下螢光膜S
という)を形成した。
Separately, for comparison, the Ag activation amount was 1.5× 10 -4 g for 1 g of (Zn 0.25 , Cd 0.75 ) S matrix .
(Zn 0.25 , Cd 0.75 )S:Ag phosphor was used in the same manner as in Example 1, except that the phosphor was deposited on one side of a 2 cm square aluminum anode plate. Fluorescent film (hereinafter referred to as fluorescent film S)
) was formed.

上述のようにして得た螢光膜Dおよび螢光膜S
を50Vの低速電子線で励起した時、螢光膜Dは螢
光膜Sの約1.6倍の発光輝度を示した。
Fluorescent film D and fluorescent film S obtained as described above
When excited with a slow electron beam of 50V, the fluorescent film D exhibited luminance about 1.6 times that of the fluorescent film S.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は(Zn1-x,Cdx)S:Ag螢光体を使用し
た螢光膜を有する螢光表示管における(Zn1-x
Cdx)S:Ag螢光体のAg付活量と螢光膜の発光
輝度との関係を例示するグラフであり、曲線a,
bおよびcはそれぞれ螢光膜が(Zn1-x,Cdx
S:Ag螢光体のみからなり該螢光膜が沈降塗布
法によつて形成された場合、螢光膜が(Zn1-x
Cdx)S:Ag螢光体のみからなり該螢光膜がスク
リーン印刷法によつて形成された場合、および螢
光膜が(Zn1-x,Cdx)S:Ag螢光体とIn2O3とを
混合した発光組成物からなり該螢光膜がスクリー
ン印刷法によつて形成された場合である。
The drawing shows (Zn 1-x , Cd x ) in a fluorescent display tube with a fluorescent film using S:Ag phosphor.
Cd
b and c are fluorescent films (Zn 1-x , Cd x ), respectively.
S: When the phosphor film is made of only Ag phosphor and is formed by the precipitation coating method, the phosphor film consists of (Zn 1-x ,
Cd x )S:Ag phosphor and the phosphor film formed by screen printing, This is a case where the fluorescent film is made of a luminescent composition mixed with 2 O 3 and is formed by a screen printing method.

Claims (1)

【特許請求の範囲】 1 組成式が (Zn1-x,Cdx)S (但し、xは0.65≦x≦1.0なる条件を満たす
数である) で表わされる硫化亜鉛カドミウムを母体とし、こ
の母体1gに対して3×10-4乃至5×10-3gの銀
を付活剤として含む銀付活硫化亜鉛カドミウム蛍
光体[(Zn1-x,Cdx)S:Ag]と、酸化インジ
ウム(In2O3)とを、7:3乃至99:1の重量比で
混合してなる発光組成物。 2 上記銀付活硫化亜鉛カドミウム蛍光体と上記
酸化インジウムとの混合重量比が17:3乃至19:
1であることを特徴とする特許請求の範囲第1項
記載の発光組成物。
[Claims] 1. Zinc cadmium sulfide having the compositional formula (Zn 1-x , Cdx)S (where x is a number satisfying the condition 0.65≦x≦1.0) is used as a matrix, and 1 g of this matrix is Silver-activated zinc sulfide cadmium phosphor [(Zn 1-x , Cdx)S:Ag] containing 3×10 -4 to 5×10 -3 g of silver as an activator and indium oxide (In 2 O 3 ) in a weight ratio of 7:3 to 99:1. 2 The mixing weight ratio of the silver-activated zinc sulfide cadmium phosphor and the indium oxide is 17:3 to 19:
1. The luminescent composition according to claim 1, characterized in that:
JP5268481A 1981-04-08 1981-04-08 Luminescent composition Granted JPS57167381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5268481A JPS57167381A (en) 1981-04-08 1981-04-08 Luminescent composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5268481A JPS57167381A (en) 1981-04-08 1981-04-08 Luminescent composition

Publications (2)

Publication Number Publication Date
JPS57167381A JPS57167381A (en) 1982-10-15
JPS6146028B2 true JPS6146028B2 (en) 1986-10-11

Family

ID=12921707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5268481A Granted JPS57167381A (en) 1981-04-08 1981-04-08 Luminescent composition

Country Status (1)

Country Link
JP (1) JPS57167381A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0178976B1 (en) * 1990-07-24 1999-04-01 손욱 Red phosphor for low speed electron beam and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132489A (en) * 1977-04-26 1978-11-18 Dainippon Toryo Co Ltd Fluorescent display tube excited by low speed electron beams
JPS5523104A (en) * 1978-02-20 1980-02-19 Kasei Optonix Co Ltd Luminescent composition and low speed electron beam-exciting fluorescent display tube
JPS5592788A (en) * 1979-01-05 1980-07-14 Nec Corp Light-emitting material
JPS5599990A (en) * 1979-01-23 1980-07-30 Futaba Corp Fluorescent material and fluorescent display using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132489A (en) * 1977-04-26 1978-11-18 Dainippon Toryo Co Ltd Fluorescent display tube excited by low speed electron beams
JPS5523104A (en) * 1978-02-20 1980-02-19 Kasei Optonix Co Ltd Luminescent composition and low speed electron beam-exciting fluorescent display tube
JPS5592788A (en) * 1979-01-05 1980-07-14 Nec Corp Light-emitting material
JPS5599990A (en) * 1979-01-23 1980-07-30 Futaba Corp Fluorescent material and fluorescent display using the same

Also Published As

Publication number Publication date
JPS57167381A (en) 1982-10-15

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