JPS6142868B2 - - Google Patents
Info
- Publication number
- JPS6142868B2 JPS6142868B2 JP54033738A JP3373879A JPS6142868B2 JP S6142868 B2 JPS6142868 B2 JP S6142868B2 JP 54033738 A JP54033738 A JP 54033738A JP 3373879 A JP3373879 A JP 3373879A JP S6142868 B2 JPS6142868 B2 JP S6142868B2
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- word line
- charge storage
- storage region
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 39
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3373879A JPS55125665A (en) | 1979-03-22 | 1979-03-22 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3373879A JPS55125665A (en) | 1979-03-22 | 1979-03-22 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55125665A JPS55125665A (en) | 1980-09-27 |
JPS6142868B2 true JPS6142868B2 (US06229276-20010508-P00022.png) | 1986-09-24 |
Family
ID=12394740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3373879A Granted JPS55125665A (en) | 1979-03-22 | 1979-03-22 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55125665A (US06229276-20010508-P00022.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0270463U (US06229276-20010508-P00022.png) * | 1988-11-16 | 1990-05-29 |
-
1979
- 1979-03-22 JP JP3373879A patent/JPS55125665A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0270463U (US06229276-20010508-P00022.png) * | 1988-11-16 | 1990-05-29 |
Also Published As
Publication number | Publication date |
---|---|
JPS55125665A (en) | 1980-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4298962A (en) | Memory | |
KR100466559B1 (ko) | 반도체 메모리 장치 | |
JP4053738B2 (ja) | 半導体メモリ装置 | |
US7982252B2 (en) | Dual-gate non-volatile ferroelectric memory | |
US8139418B2 (en) | Techniques for controlling a direct injection semiconductor memory device | |
JP4064607B2 (ja) | 半導体メモリ装置 | |
US3387286A (en) | Field-effect transistor memory | |
US5363325A (en) | Dynamic semiconductor memory device having high integration density | |
TW477068B (en) | Semiconductor memory device and semiconductor memory apparatus | |
US20150155285A1 (en) | Techniques for providing a semiconductor memory device | |
US3986180A (en) | Depletion mode field effect transistor memory system | |
US20070257313A1 (en) | Semiconductor memory device including an SOI substrate | |
US5850091A (en) | Semiconductor memory device and method of reading a data therefrom | |
US4999811A (en) | Trench DRAM cell with dynamic gain | |
JP3467510B2 (ja) | Dramセル及びその製造方法 | |
US3827034A (en) | Semiconductor information storage devices | |
US4151610A (en) | High density semiconductor memory device formed in a well and having more than one capacitor | |
US8982633B2 (en) | Techniques for providing a direct injection semiconductor memory device | |
JPS59143360A (ja) | ワンデバイス・メモリ・セル | |
JPS6142868B2 (US06229276-20010508-P00022.png) | ||
JP2000090674A (ja) | 半導体記憶装置並びにその書き込み方法及び読み出し方法 | |
US20200251498A1 (en) | Simplified memory cells based on fully-depleted silicon-on-insulator transistors | |
EP0436073A2 (en) | Trench-capacitor-one-transistor storage cell and array for dynamic random access memories | |
US4652898A (en) | High speed merged charge memory | |
JPH1092954A (ja) | 半導体記憶装置 |