JPS6141266Y2 - - Google Patents

Info

Publication number
JPS6141266Y2
JPS6141266Y2 JP6294481U JP6294481U JPS6141266Y2 JP S6141266 Y2 JPS6141266 Y2 JP S6141266Y2 JP 6294481 U JP6294481 U JP 6294481U JP 6294481 U JP6294481 U JP 6294481U JP S6141266 Y2 JPS6141266 Y2 JP S6141266Y2
Authority
JP
Japan
Prior art keywords
lines
line
solar cell
light irradiation
straight line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6294481U
Other languages
Japanese (ja)
Other versions
JPS57175449U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6294481U priority Critical patent/JPS6141266Y2/ja
Publication of JPS57175449U publication Critical patent/JPS57175449U/ja
Application granted granted Critical
Publication of JPS6141266Y2 publication Critical patent/JPS6141266Y2/ja
Expired legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Description

【考案の詳細な説明】 本考案はシリコン等による半導体ウエハを用
い、その光照射面には表面電極を、裏面には裏面
電極を付着して構成される太陽電池に関し、特に
上記表面電極の形状に係るものである。
[Detailed description of the invention] The present invention relates to a solar cell constructed by using a semiconductor wafer made of silicon or the like, and having a front electrode attached to the light irradiation surface and a back electrode attached to the back surface, in particular the shape of the surface electrode. This is related to.

従来この種の表面電極としては、例えば第1図
のようにリード線取出部aを設けた中心電極ライ
ンbから、多数の補助細線ラインc,c……を同
心円状に分岐させたものがあり、当該細線ライン
c,c……としては同心円状だけでなく矩形等の
角状としたり、また中心電極ラインbから放射状
に同ラインc,c……を延出して形成したものな
ど多種のパターンが既に知られている。
Conventionally, this type of surface electrode includes one in which a large number of auxiliary thin wire lines c, c, etc. are concentrically branched from a central electrode line b provided with a lead wire outlet a, as shown in FIG. 1, for example. , the thin lines c, c... may be formed not only in concentric circles but also in angular shapes such as rectangles, or in various patterns such as lines c, c... extending radially from the center electrode line b. is already known.

ところが上記パターンにあつては、何れも半導
体ウエハdにおける光照射面eの全面にわたつて
直線状とか、図示の如くスター形状等の中心電極
ラインbを形成し、当該ラインbの全長にわたつ
て補助細線ラインc,c……を分岐的に分岐引出
する構成となつているため、第1図のようなパタ
ーンの場合中心電極ラインbのリード線取出部a
から離れている補助細線ラインc′に収集された光
照射による電流は、当該ラインc′を経て中心電極
ラインbの端末に合流した後、同ラインbを流れ
てリード線取出部aに達することになるので、こ
れによるキヤリヤーの損失が大きく、この結果太
陽電池の特性として重要な短絡電流、フイルフア
クタ(fillfacfor)の点で満足すべきものとなつて
いないと共に、変換効率としても11.5%程度とな
つている。
However, in the above-mentioned patterns, a center electrode line b is formed in a straight line or in a star shape as shown in the figure over the entire surface of the light irradiation surface e of the semiconductor wafer d, and the center electrode line b is formed over the entire length of the line b. Since the structure is such that the auxiliary thin wire lines c, c... are branched out in a branching manner, in the case of the pattern shown in Fig. 1, the lead wire extraction portion a of the center electrode line b is
The current due to light irradiation collected on the auxiliary thin wire line c' that is distant from the line c' passes through the line c' and joins the end of the center electrode line b, and then flows through the same line b and reaches the lead wire extraction part a. Therefore, the carrier loss caused by this is large, and as a result, the short circuit current and fill factor, which are important characteristics of solar cells, are not satisfactory, and the conversion efficiency is only about 11.5%. There is.

本考案は上記の点に鑑み、適切な表面電極パタ
ーンを形成することにより太陽電池の特性を向上
させようとするもので、これを図示の実施例によ
つて詳記すれば、半導体ウエハ1の光照射面2に
形成する表面電極として、本考案では当該光照射
面2の一側端寄りに広幅としたリード線取出部3
を所要短寸だけ形成するのであり、さらにこのリ
ード線取出部3の先端部3′および左右の側縁部
から、円形とした半導体ウエハ1の周縁に向けて
放射状に形成した所望複数本の中幅直線ライン
4,4……を、互いに離間して引出するのであ
り、図示の中幅直線ライン4,4……はリード線
取出部3から同上ウエハ1の周縁に向けて先細り
としたテーパ状に形成されている。
In view of the above points, the present invention attempts to improve the characteristics of solar cells by forming an appropriate surface electrode pattern. In the present invention, as a surface electrode formed on the light irradiation surface 2, a lead wire extraction portion 3 with a wide width is provided near one side end of the light irradiation surface 2.
In addition, a desired plurality of wires are formed radially from the tip 3' and left and right side edges of the lead wire take-out portion 3 toward the periphery of the circular semiconductor wafer 1. The width straight lines 4, 4, . . . are pulled out at a distance from each other, and the medium width straight lines 4, 4, . is formed.

さらに上記中幅直線ライン4,4……はリード
線取出部3よりも細幅に形成されていると共に、
同ライン4,4……の左右両側からは同ライン
4,4……よりも、さらに細成した補助細線ライ
ン5,5……が側方に引き出されており、同ライ
ン5,5……として図示した実施例では、その交
差角αが約45゜で互いに交差することなく直線状
に引出されているが、本考案ではもちろん図示の
ように直線状でなくともその目的を達成すること
ができる。
Furthermore, the medium-width straight lines 4, 4... are formed narrower than the lead wire extraction portion 3, and
From the left and right sides of the lines 4, 4..., auxiliary thin lines 5, 5..., which are even thinner than the lines 4, 4..., are pulled out laterally, and the lines 5, 5... In the illustrated example, the intersection angle α is approximately 45°, and the lines are drawn out in a straight line without intersecting each other. However, in the present invention, it is of course possible to achieve the purpose even if the lines are not in a straight line as shown in the figure. can.

本考案では上記実施例によつて具現される通
り、表面電極が、光照射面2の一側端寄りに形成
した広幅のリード線取付部3と、同取付部3から
相互に離間して放射状に引出形成した所望複数本
の中幅直線ライン4,4……と、同ライン4,4
……から分岐して形成した多数本の補助細線ライ
ン5,5……とにより構成されているから、中幅
直線ライン4,4……は直線リード線取付部3に
集約的状態で接続されていることゝなり、このた
め第2図のように光起電力による電流の通路が、
端末部分からリード線取出部3に向け直線的に形
成されているため、最短距離に近似した形成とな
り、このため、キヤリヤーのロスが少なくなる。
In the present invention, as embodied in the above-mentioned embodiment, the surface electrode has a wide lead wire attachment part 3 formed near one end of the light irradiation surface 2, and a radial shape spaced apart from the attachment part 3. A desired plurality of medium-width straight lines 4, 4... drawn out and formed on the same line 4, 4.
Since it is composed of a large number of auxiliary thin wire lines 5, 5... branched from ..., the medium-width straight lines 4, 4... are connected to the straight lead wire attachment part 3 in a concentrated manner. Therefore, as shown in Figure 2, the path of current caused by photovoltaic force is
Since it is formed linearly from the terminal portion toward the lead wire take-out portion 3, it is formed to approximate the shortest distance, thereby reducing carrier loss.

しかも本考案では上記の通り中幅直線ライン
4,4……の基根部が第3図に示す如く一点Aの
集中する構成をとらず、所定短寸のリード線取付
部3から左右へ離間して引出すようにしたので、
上記基根部相互間に適度の離間スペースが形成さ
れることにより、従つて表面電極を形成する際、
当該電極形成部分以外をマスキングして同電極を
蒸着等の手段により形成する際、当該マスキング
のためのマスクシートに、第3図の場合の如く極
細成箇所ができず、このため極細成箇所による作
業性の劣化や、表面電極の不正蒸着といつた問題
を発生させることなく前記ロスを大巾に低減する
ことができる。
Moreover, in this invention, the base portions of the medium width straight lines 4, 4 ... are not concentrated at one point A as shown in Figure 3, but are drawn out from the lead wire attachment portion 3 of a predetermined short length at a distance to the left and right.
Since an appropriate space is formed between the base portions, when forming the surface electrodes,
When the electrode is formed by vapor deposition or other means while masking areas other than the electrode formation area, extremely thin portions are not formed in the mask sheet used for masking as in the case of Figure 3. As a result, problems such as deterioration of workability due to extremely thin portions and improper vapor deposition of the surface electrode do not occur, and the loss can be significantly reduced.

しかも中幅直線ライン4,4……は放射状の直
線ラインに形成されているから、第4図のイに示
す円弧状ラインBやロの如き角状曲成のライン
B′に比し、同図ハのような直線ラインB″によつ
て構成されていることになり、従つてこれらライ
ンの端点X,Xを結ぶライン長としてはB″が最
短となり、それだけキヤリヤーのロスが少なくな
ると共に、光照射面中に占める表面電極の面積比
率もB′の場合が最小となるから、それだけ受光面
の面積比率が大となる。
Moreover, since the medium-width straight lines 4, 4, .
Compared to B', it is composed of a straight line B'' as shown in C in the same figure. Therefore, B'' is the shortest line connecting the end points X and X of these lines, and the carrier is correspondingly shorter. Since the loss in B' is reduced, and the area ratio of the surface electrode occupying the light irradiation surface is also minimized in case B', the area ratio of the light receiving surface is increased accordingly.

こゝで本考案による直径3インチセルにつき、
従来の太陽電池とその特性を比較したところ、短
絡電流では10%の増加、フイルフアクターでは5
〜6%増、交換効率では11.5%の従来製品に比し
13.0%を確認することができた。
Here, for a 3-inch diameter cell according to the present invention,
Comparing its characteristics with conventional solar cells, it was found that the short circuit current increased by 10%, and the film factor increased by 5%.
~6% increase, compared to the conventional product with exchange efficiency of 11.5%
We were able to confirm 13.0%.

尚上記実験結果からして、3インチセルより
も、さらに大形の太陽電池であれば、一層の効果
増が期待可能となる。
In addition, from the above experimental results, it is possible to expect a further increase in the effect if the solar cell is larger than the 3-inch cell.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の太陽電池における表面電極の1
パターンを示す平面図、第2図は本考案に係る表
面電極パターンの一実施例を示した太陽電池の平
面図、第3図は本案パターンの効果説明上例示し
た仮想表面電極パターンの平面説明図、第4図の
イ,ロ,ハは同効果説明用の電極ライン例を示し
た平面図である。 1……半導体ウエハ、2……光照射面、3……
リード線取出部、4……中幅直線ライン、5……
補助細線ライン。
Figure 1 shows one of the surface electrodes in a conventional solar cell.
FIG. 2 is a plan view of a solar cell showing an example of the surface electrode pattern according to the present invention; FIG. 3 is a plan view of a virtual surface electrode pattern exemplified to explain the effect of the pattern of the present invention. , A, B, and C of FIG. 4 are plan views showing examples of electrode lines for explaining the same effect. 1... Semiconductor wafer, 2... Light irradiation surface, 3...
Lead wire outlet, 4... Medium width straight line, 5...
Auxiliary thin line.

Claims (1)

【実用新案登録請求の範囲】 (1) 半導体ウエハの光照射面に表面電極を形成し
た太陽電池において、当該表面電極を、光照射
面の一側端寄りに形成した広幅のリード線取出
部と、当該取出部から相互に離間して放射状に
引出形成した所望複数本の中幅直線ラインと、
同直線ラインから分岐して形成した多数の補助
細線ラインとにより構成してなる太陽電池の表
面電極パターン。 (2) 補助細線ラインが中幅直線ラインに対して略
45゜の角度で直線状に分岐引出されている実用
新案登録請求の範囲第1項記載の太陽電池の電
極パターン。
[Scope of Claim for Utility Model Registration] (1) In a solar cell in which a surface electrode is formed on the light irradiation surface of a semiconductor wafer, the surface electrode is formed with a wide lead wire extraction portion formed near one end of the light irradiation surface. , a desired plurality of medium-width straight lines drawn radially apart from each other from the extraction portion;
A surface electrode pattern of a solar cell consisting of a large number of auxiliary thin lines branched from the same straight line. (2) The auxiliary thin line is abbreviated to the medium-width straight line.
The electrode pattern of a solar cell according to claim 1 of the utility model registration, which is branched and drawn out in a straight line at an angle of 45 degrees.
JP6294481U 1981-04-30 1981-04-30 Expired JPS6141266Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6294481U JPS6141266Y2 (en) 1981-04-30 1981-04-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6294481U JPS6141266Y2 (en) 1981-04-30 1981-04-30

Publications (2)

Publication Number Publication Date
JPS57175449U JPS57175449U (en) 1982-11-05
JPS6141266Y2 true JPS6141266Y2 (en) 1986-11-25

Family

ID=29859088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6294481U Expired JPS6141266Y2 (en) 1981-04-30 1981-04-30

Country Status (1)

Country Link
JP (1) JPS6141266Y2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0543489Y2 (en) * 1987-07-28 1993-11-02
JP4528082B2 (en) * 2004-10-04 2010-08-18 新日本石油株式会社 Electrode substrate having conductive pattern and solar cell
US7804022B2 (en) * 2007-03-16 2010-09-28 Sunpower Corporation Solar cell contact fingers and solder pad arrangement for enhanced efficiency

Also Published As

Publication number Publication date
JPS57175449U (en) 1982-11-05

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