JPS6135550B2 - - Google Patents
Info
- Publication number
- JPS6135550B2 JPS6135550B2 JP51087233A JP8723376A JPS6135550B2 JP S6135550 B2 JPS6135550 B2 JP S6135550B2 JP 51087233 A JP51087233 A JP 51087233A JP 8723376 A JP8723376 A JP 8723376A JP S6135550 B2 JPS6135550 B2 JP S6135550B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- photoreceptor
- selenium
- substrate
- over time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011669 selenium Substances 0.000 claims description 19
- 229910052711 selenium Inorganic materials 0.000 claims description 19
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 18
- 229910018131 Al-Mn Inorganic materials 0.000 claims description 4
- 229910018461 Al—Mn Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- -1 Aluminum-manganese Chemical compound 0.000 description 6
- 229910018134 Al-Mg Inorganic materials 0.000 description 3
- 229910018467 Al—Mg Inorganic materials 0.000 description 3
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Description
本発明は、電子写真用セレン感光体に係り、詳
しくは感光体としての諸特性の良好な経時的変化
を保つよう基板の材質を選択したセレン系感光体
に関するものである。
従来、電子写真用セレン感光体は導電性基板上
にセレン材料を蒸着等の方法により形成すること
により得られている。
このセレン層は、まずある電荷量をあたえら
れ、その後光のパターンをあたえられることによ
り、電気潜像を形成する。この過程においては、
セレン層と導電性基板との間にキヤリアの移動を
生じ、そのため感光体としての特性は、セレン層
と基板との境界面の状態および基板の材質によつ
て大きな影響を受けることになる。
このセレン系感光体の基板としては、従来、ア
ルミニウム、SUS等が一般的に使用されており、
中でもアルミニウム基板が経済性、取扱いの容易
性から最も多く用いられている。
一般にアルミニウム材質といつても、その使用
日的によつて主要添加物の種類が異なり、つぎの
7系統に大別される。
(1) 純アルミニウム系
(2) アルミニウム−マンガン系
(3) アルミニウム−銅系
(4) アルミニウム−けい素系
(5) アルミニウム−マグネシウム系
(6) アルミニウム−マグネシウム−けい素系
(7) アルミニウム−亜鉛系
電子写真用セレン感光体の基板としては、上記
のうち、どの種のものが最も適しているかが問題
である。そこで、発明者等は主として感光体とし
ての静電特性を調べることにより、セレン感光体
の基板として最適のものを選択した。静電特性に
ついては初期特性のみではなく、経時的な変化に
注目して測定を行なつた。
電子写真用セレン感光体のアルミニウム基板と
して、感光体の初期特性のみに注目した場合は、
上記アルミニウム材の種類による差はほとんど認
められなかつた。ところが経時的な変化に関して
は、アルミニウム材の種類によつて差異が認めら
れた。電子写真用感光体としては、初期特性が良
いことはもちろんであるが、複写機における連続
コピー時においても、その初期品質を維持するこ
とが不可欠である。このため感光体としては特性
の経時的な劣化があつてはならない。
かかる観点を主眼として試験を行なつたのであ
〓〓〓〓〓
るが、前記アルミニウムの7系統の代表的合金の
主要用途は次表に示す如くまとめることができ
る。
The present invention relates to a selenium photoreceptor for electrophotography, and more particularly to a selenium-based photoreceptor in which the material of the substrate is selected so as to maintain favorable changes in various properties of the photoreceptor over time. Conventionally, a selenium photoreceptor for electrophotography has been obtained by forming a selenium material on a conductive substrate by a method such as vapor deposition. The selenium layer is first charged with a certain amount of charge and then exposed to a pattern of light to form an electrical latent image. In this process,
Carrier movement occurs between the selenium layer and the conductive substrate, so the characteristics of the photoreceptor are greatly affected by the state of the interface between the selenium layer and the substrate and the material of the substrate. Conventionally, aluminum, SUS, etc. have been commonly used as the substrate for this selenium-based photoreceptor.
Among these, aluminum substrates are most commonly used due to their economic efficiency and ease of handling. Generally speaking, aluminum materials have different types of main additives depending on the date of use, and are broadly classified into the following seven types. (1) Pure aluminum (2) Aluminum-manganese (3) Aluminum-copper (4) Aluminum-silicon (5) Aluminum-magnesium (6) Aluminum-magnesium-silicon (7) Aluminum- The question is which of the above types is most suitable as a substrate for a zinc-based selenium photoreceptor for electrophotography. Therefore, the inventors selected the most suitable substrate for the selenium photoreceptor by mainly investigating the electrostatic properties of the photoreceptor. Regarding the electrostatic properties, we measured not only the initial properties but also the changes over time. When focusing only on the initial characteristics of the photoreceptor as an aluminum substrate for a selenium photoreceptor for electrophotography,
Almost no difference was observed depending on the type of aluminum material. However, regarding changes over time, differences were observed depending on the type of aluminum material. As a photoreceptor for electrophotography, it is essential not only to have good initial characteristics, but also to maintain the initial quality even during continuous copying in a copying machine. Therefore, the characteristics of the photoreceptor must not deteriorate over time. The test was conducted with this perspective in mind.
However, the main uses of the seven representative alloys of aluminum can be summarized as shown in the following table.
【表】【table】
【表】
さて上記材質の内、電子写真用セレン感光体の
アルミニウム基板としてはその主要用途・経済性
から、先ず次表に示すAl−Mn系(JIS3003)と
Al−Mg系(JIS5052)が適すると思われる。
Al−Mn系のMn添加の効果としては、強度のア
ツプ、加工性の良好が挙げられる。また耐食性も
純アルミニウムと変らない。一方Al−Mg系のMg
添加の効果は、やはり強度のアツプが挙げられ
る。又耐食性は純アルミニウムと変らない。[Table] Among the above materials, the Al-Mn type (JIS3003) shown in the following table is the first choice for the aluminum substrate of selenium photoreceptors for electrophotography due to its main uses and economical efficiency.
Al-Mg system (JIS5052) seems to be suitable. The effects of adding Mn to Al-Mn systems include increased strength and improved workability. It also has the same corrosion resistance as pure aluminum. On the other hand, Mg of Al−Mg system
The effect of addition is an increase in strength. Also, its corrosion resistance is the same as pure aluminum.
【表】
そこで上記2つの材質について、基板としての
適否を検討した。
上記表に示した2つのアルミニウム基板につい
て、基板温度75℃で5Nのセレンを約50μの膜厚
に真空蒸着し、その静電特性を調べた。
測定は50℃の環境中に作成したサンプルを放置
し、一定時間経過後の静電特性の劣化について行
つた。
第1図は、表面電位の経時変化を示すグラフで
ある。表面電位(V)とは+5.7KVで20秒間帯電
した後の電位のことである。
第2図には暗減衰の経時変化を示した。暗減衰
とは上記帯電電位をVsとし、20秒間暗中に放置
したのちの電位Voとの比Vo/Vsで表わされるも
のである。
この第1図および第2図より、Mnを1.0〜1.5
%含有するアルミニウム−マンガン系のJIS3003
材を基板としてセレン感光体は、約50時間経過後
も、ほとんど初期特性と変らないのに対し、アル
ミニウム−マグネシウム系のJIS5052材を基板と
したセレン感光体は、初期特性からの大幅な劣化
が認められる。
以上の結果より、電子写真用セレン感光体の基
板としてアルミニウム材質を用いる場合は、本発
明によるアルミニウム−マンガン系のアルミニウ
ム基材を使用することにより、初期特性および特
性の経時変化が良好であるセレン感光体を得るこ
とができるものである。[Table] Therefore, we examined the suitability of the above two materials as a substrate. On the two aluminum substrates shown in the above table, 5N selenium was vacuum-deposited to a thickness of about 50μ at a substrate temperature of 75°C, and the electrostatic properties thereof were investigated. Measurements were made by leaving the prepared sample in an environment of 50°C and checking for the deterioration of electrostatic properties after a certain period of time. FIG. 1 is a graph showing changes in surface potential over time. The surface potential (V) is the potential after being charged at +5.7KV for 20 seconds. Figure 2 shows the change in dark decay over time. Dark decay is expressed as the ratio Vo/Vs, where the charged potential is Vs and the potential Vo after being left in the dark for 20 seconds. From these figures 1 and 2, Mn is 1.0 to 1.5.
% aluminum-manganese JIS3003
A selenium photoreceptor using a material as a substrate has almost the same initial characteristics even after approximately 50 hours, whereas a selenium photoreceptor using an aluminum-magnesium-based JIS5052 material as a substrate shows significant deterioration of its initial characteristics. Is recognized. From the above results, when using an aluminum material as a substrate for a selenium photoreceptor for electrophotography, the use of the aluminum-manganese-based aluminum base material according to the present invention provides selenium with good initial properties and changes in properties over time. A photoreceptor can be obtained.
第1図は、Al−Mn系およびAl−Mg系のアルミ
ニウム材を感光体の基板として使用した場合の表
面電位の経時変化を示すグラフ。第2図は同じく
暗減衰の経時変化を示すグラフである。
〓〓〓〓〓
FIG. 1 is a graph showing changes in surface potential over time when Al-Mn-based and Al-Mg-based aluminum materials are used as photoreceptor substrates. FIG. 2 is a graph similarly showing the change in dark decay over time. 〓〓〓〓〓
Claims (1)
1.5%含有するAl−Mn系合金板を用い、この基板
上にセレンを主体とする感光層を設けてなること
を特徴とする電子写真用セレン感光体。1 As a substrate for electrophotographic photoreceptor, Mn is 1.0~
A selenium photoreceptor for electrophotography, characterized in that it uses an Al-Mn alloy plate containing 1.5%, and a photosensitive layer mainly composed of selenium is provided on the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8723376A JPS5313423A (en) | 1976-07-23 | 1976-07-23 | Photosensitive element of selenium for electronic photography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8723376A JPS5313423A (en) | 1976-07-23 | 1976-07-23 | Photosensitive element of selenium for electronic photography |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5313423A JPS5313423A (en) | 1978-02-07 |
JPS6135550B2 true JPS6135550B2 (en) | 1986-08-13 |
Family
ID=13909123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8723376A Granted JPS5313423A (en) | 1976-07-23 | 1976-07-23 | Photosensitive element of selenium for electronic photography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5313423A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193463A (en) * | 1983-04-18 | 1984-11-02 | Canon Inc | Photoconductive member |
JPS6028662A (en) * | 1983-07-27 | 1985-02-13 | Stanley Electric Co Ltd | Amorphous silicon photosensitive body for electrophotography |
JPS6111065U (en) * | 1984-06-26 | 1986-01-22 | 旭有機材工業株式会社 | Gas ball valve |
JPH0615699B2 (en) * | 1984-12-12 | 1994-03-02 | キヤノン株式会社 | Photoconductive member for electrophotography |
JPS61199046A (en) * | 1985-02-28 | 1986-09-03 | Showa Alum Corp | Aluminum alloy material for photosensitive drum of electrophotographic copying machine |
KR100889369B1 (en) * | 2008-10-01 | 2009-03-19 | 신동일 | A hat for protecting head |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4838425A (en) * | 1971-09-20 | 1973-06-06 | ||
JPS50142241A (en) * | 1973-07-30 | 1975-11-15 |
-
1976
- 1976-07-23 JP JP8723376A patent/JPS5313423A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4838425A (en) * | 1971-09-20 | 1973-06-06 | ||
JPS50142241A (en) * | 1973-07-30 | 1975-11-15 |
Also Published As
Publication number | Publication date |
---|---|
JPS5313423A (en) | 1978-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4134763A (en) | Selenium-base photosensitive materials for electrophotography having super-finished substrate | |
EP0017513B2 (en) | Electrophotographic member and process for forming a latent image | |
JPS6135550B2 (en) | ||
JPS59116662A (en) | Electrophotographic sensitive body | |
EP0088607B1 (en) | Organic photosensitive material for electrophotography | |
US5432034A (en) | Photoconductor for electrophotography including an undercoating layer | |
US3966470A (en) | Photo-conductive coating containing Ge, S, and Pb or Sn | |
JPH0533392B2 (en) | ||
JPS6313179B2 (en) | ||
JP3060339B2 (en) | Electrophotographic photoreceptor | |
US3951654A (en) | Method for enhancement in the rate and efficiency of photodischarge of electrostatographic imaging members comprising phthalocyanine | |
JPH0197964A (en) | Electrophotographic sensitive body | |
US4415642A (en) | Electrophotographic member of Se-Te-As with halogen | |
TW201831556A (en) | Electrophotographic photoreceptor, method for producing same, and electrophotographic device using same | |
JPH0715581B2 (en) | Electrophotographic photoreceptor | |
JPS6343162A (en) | Electrophotographic sensitive body | |
JP2746300B2 (en) | Electrophotographic photoreceptor | |
JPH0656499B2 (en) | Electrophotographic photoreceptor | |
IL32250A (en) | Electrophotography | |
JPS5974568A (en) | Electrophotographic receptor and its manufacture | |
JP2539497B2 (en) | Electrophotographic photoreceptor | |
JP2002040688A (en) | Electrophotographic photoreceptor and image-forming device using the same | |
JPH05704B2 (en) | ||
JPS63170656A (en) | Photosensitive body for electron photography | |
JPH0513495B2 (en) |