JPS6134809Y2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a gas insulated busbar device used in a high power circuit, particularly a gas insulated busbar device having an impurity trapping electrode.

Conventionally, as this type of gas insulated busbar device, the first
The ones shown in Fig. 2 and Fig. 2 are often used. That is, a high voltage conductor 3 held approximately in the diametrical center of the cylindrical container 1 by an insulating spacer 2 is inserted into a cylindrical container 1 in an insulated state with an insulating gas such as sulfur hexafluoride gas SF ₆ . In the lower legs of the insulating spacer 2 in the drawing, there is an impurity trapping electrode 5 formed in a ring shape or an arc shape (arc shape in the conventional example shown) from a plate material having a large number of holes or slits 4. It is held in the vicinity of the bottom of the cylindrical container 1 by an end filler 6 on the spacer side and a screw 7 screwed thereto.

In the gas insulated bus device having the above configuration, when the impurities 8 mixed inside the bus are captured by the impurity trapping electrode 5, a preliminary voltage is applied to the high voltage conductor 3. However, if the voltage is low, the impurity trapping electrode 5
Since the electric field in the area marked * (Fig. 2) near the end of is weak, the impurity 8, which is moving irregularly due to the voltage, tends to accumulate in the area marked *.

In order to compensate for the above drawbacks, as shown in Figure 3,
At least the dimension in the axial or longitudinal direction is sufficiently longer than that of the impurity trapping electrode 5, and the hole 4 of the same electrode
An insulating plate 10 having a hole 9 sufficiently larger than the area of
, an impurity trapping electrode 5 close to the inner surface of the cylindrical container 1
The electrode 5 is used by being superimposed on the outer surface of the electrode 5. According to this structure, impurity 8
Insulating plate 10 before entering the part marked with * in Figure 2.
Since the impurity is placed on top of the impurity trapping electrode 5, it is easily captured by the impurity trapping electrode 5, as can be understood from FIG.

However, in a configuration using the insulating plate 10 as described above, it is unavoidable that the insulating plate 10 becomes electrically charged, so that impurities may adhere to the insulating plate itself due to the electrostatic action. If these impurities suddenly leave the insulating plate for some reason during operation and reach the side of the insulating spacer 2 before being captured by the holes 4 of the impurity trapping electrode 5, it will be extremely harmful in terms of withstand voltage. If impurities adhere to the insulating plate 10, it will cause corona generation, which is extremely harmful.

The present invention has been made in order to eliminate the above-mentioned drawbacks, and provides a gas insulated busbar device with an impurity trapping electrode that can reliably trap impurities and prevent the occurrence of harmful phenomena caused by impurities. The purpose is to

To this end, the present invention comprises: a cylindrical container; a high voltage conductor extending along a longitudinal axis within the cylindrical container; an insulating spacer supporting the high voltage conductor within the cylindrical container; In a gas insulated busbar device comprising an impurity trapping electrode attached to a leg portion of an insulating spacer and having a plurality of holes, the outer surface of the impurity trapping electrode on the inner surface side of the cylindrical container has the cylindrical shape. An insulating plate having a dimension longer than the impurity trapping electrode at least in the axial direction of the device is attached, and a semiconductor film is formed on the surface of the insulating plate having a plurality of holes. It is something. In a preferred embodiment, the semiconductor film is formed by applying a semiconductor paint.

Next, a preferred embodiment of the present invention will be described in detail with reference to FIGS. 4 and 5, in which the same reference numerals indicate the same or corresponding parts.

In FIGS. 4 and 5, 1 is a cylindrical container;
2 is an insulating spacer, 3 is a high voltage conductor, 5 is an impurity trapping electrode, 4 is a hole or slit provided in the impurity trapping electrode 5, 6 is an end filler, and 7 is a mounting screw. The various components are shown in Figures 1 to 3.
The structure is similar to that of the prior art described in connection with the figures. Further, 10 is an insulating plate, and 9 is a hole provided in the insulating plate 10. Similarly to the prior art, the insulating plate 10, which is used below the impurity trapping electrode 5 and superimposed on the same electrode 5, is used to trap impurities. The hole 9 is formed to be sufficiently longer in at least the axial or longitudinal direction than the electrode 5, and has a hole 9 that is sufficiently larger in area than the hole 4 of the electrode. According to the present invention, the semiconductor film 11 is formed on the surface of the insulating plate 10 by applying, for example, a semiconductor paint.

According to the above configuration, the resistance of the surface of the insulating plate 10 is kept low by the formation of the semiconductor film 11, so that charging during use is prevented, and this charging prevention facilitates the capture of the impurities described above. Since this is carried out accurately and accurately, it is possible to prevent the occurrence of harmful phenomena due to impurities, and it is possible to greatly improve the insulation function and ensure safety.

[Brief explanation of drawings]

Fig. 1 is a sectional view of a part of a conventional gas insulated busbar device, Fig. 2 is an enlarged sectional view of the main part, Fig. 3 is a sectional view of a part of an improved conventional gas insulated busbar device, and Fig. 4 is a sectional view of a part of a conventional gas insulated busbar device. The figure is a sectional view of a part of a gas insulated busbar device showing an embodiment of the present invention, and FIG. 5 is an enlarged sectional view of an insulating plate. 1... Cylindrical container, 2... Insulating spacer, 3...
...High voltage conductor, 4... Impurity trapping electrode hole, 5...
... Impurity trapping electrode, 8... Impurity, 9... Hole of insulating plate, 10... Insulating plate, 11... Semiconductor film.

Claims (1)

[Claims for Utility Model Registration] 1. A cylindrical container, a high voltage conductor extending along the longitudinal axis within the cylindrical container, and an insulating spacer supporting the high voltage conductor within the cylindrical container. , an impurity trapping electrode attached to the leg of the insulating spacer and having a plurality of holes, the outer surface of the impurity trapping electrode on the inner surface side of the cylindrical container having An insulating plate having a dimension longer than the impurity trapping electrode at least in the axial direction of the cylindrical container is attached, and a semiconductor film is formed on the surface of the insulating plate having a plurality of holes. gas insulated busbar equipment. 2. The gas insulated busbar device according to claim 1, wherein the semiconductor film is formed by applying a semiconductor paint.