JPS6133184B2 - - Google Patents
Info
- Publication number
- JPS6133184B2 JPS6133184B2 JP5182278A JP5182278A JPS6133184B2 JP S6133184 B2 JPS6133184 B2 JP S6133184B2 JP 5182278 A JP5182278 A JP 5182278A JP 5182278 A JP5182278 A JP 5182278A JP S6133184 B2 JPS6133184 B2 JP S6133184B2
- Authority
- JP
- Japan
- Prior art keywords
- photoconductor
- compounds
- alkali metal
- alkaline earth
- cadmium sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 claims description 24
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 22
- 229910052910 alkali metal silicate Inorganic materials 0.000 claims description 15
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 11
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 108091008695 photoreceptors Proteins 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000011575 calcium Substances 0.000 description 10
- 230000014759 maintenance of location Effects 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- -1 organic acid salts Chemical class 0.000 description 8
- 229910052791 calcium Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052716 thallium Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 229910052925 anhydrite Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 150000002826 nitrites Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 229910017146 AlTl Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- AMVQGJHFDJVOOB-UHFFFAOYSA-H aluminium sulfate octadecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.O.[Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O AMVQGJHFDJVOOB-UHFFFAOYSA-H 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- NCDKOFHLJFJLTB-UHFFFAOYSA-N cadmium(2+);dioxido(oxo)silane Chemical compound [Cd+2].[O-][Si]([O-])=O NCDKOFHLJFJLTB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910001388 sodium aluminate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【発明の詳細な説明】
本発明は、アルカリ金属珪酸塩およびアルカリ
土類又は周期率表第a族化合物を硫化カドミウ
ム粉末表面に付着させることにより電子写真特性
を改良した電子写真用被覆光導電体及びその製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a coated photoconductor for electrophotography with improved electrophotographic properties by adhering an alkali metal silicate and an alkaline earth metal or a group a compound of the periodic table to the surface of cadmium sulfide powder. and its manufacturing method.
電子写真感光体は、所定の特性を得るため、あ
るいは適用される電子写真プロセスの種類に応じ
て種々の構成をとるものである。そして、電子写
真感光体の代表的なものとして、支持体上に光導
電層が形成されている感光体および表面に絶縁層
を備えた感光体があり、広く用いられている。支
持体と光導電層から構成される感光体は、最も一
般的な電子写真プロセスによる、即ち、帯電、画
像露光および現象、更に必要に応じて転写による
画像形成に用いられる。また、絶縁層を備えた感
光体について、この絶縁層は、光導電層の保護、
感光体の機械的強度の改善、または、特定の電子
写真プロセスに適用されるため、等の目的のため
に設けられるものである。このような絶縁層を有
する感光体または、絶縁層を有する感光体を電子
写真プロセスの代表的な例は、例えば、米国特許
第2860048号公報、特公昭41−16429号公報、特公
昭38−15446号公報、特公昭46−3713号公報、特
公昭42−23910号公報、特公昭43−247748号公
報、特公昭42−19747号公報、特公昭36−4121号
公報、などに記載されている。 Electrophotographic photoreceptors have various configurations in order to obtain predetermined characteristics or depending on the type of electrophotographic process to which they are applied. As representative electrophotographic photoreceptors, there are photoreceptors having a photoconductive layer formed on a support and photoreceptors having an insulating layer on the surface, which are widely used. The photoreceptor, consisting of a support and a photoconductive layer, is used for imaging by the most common electrophotographic processes, ie, charging, imagewise exposure and development, and optionally transfer. In addition, for photoreceptors equipped with an insulating layer, this insulating layer protects the photoconductive layer,
It is provided for the purpose of improving the mechanical strength of the photoreceptor or being applied to a specific electrophotographic process. Typical examples of photoreceptors having such an insulating layer or photoreceptors having an insulating layer in an electrophotographic process include, for example, U.S. Patent No. 2860048, Japanese Patent Publication No. 16429/1970, and Japanese Patent Publication No. 15446/1983. Japanese Patent Publication No. 46-3713, Japanese Patent Publication No. 42-23910, Japanese Patent Publication No. 43-247748, Japanese Patent Publication No. 19747-1974, Japanese Patent Publication No. 4121-1974, etc.
電子写真感光体は、適用される電子写真プロセ
スに応じた所定の感度、電気特性、更には光学特
性を備えていることが要求されるばかりでなく、
使用条件の変化特性に影響を与えないことも重要
なことである。しかしながら、硫化カドミウム粉
末を用いた感光体では、しばしば、下記のような
点が問題となつていた。 Electrophotographic photoreceptors are not only required to have predetermined sensitivity, electrical properties, and even optical properties depending on the electrophotographic process to which they are applied;
It is also important that the change characteristics of the usage conditions are not affected. However, photoreceptors using cadmium sulfide powder often have the following problems.
(1) 高湿度下で画像濃度が著しく低下する。(1) Image density decreases significantly under high humidity.
(2) 繰り返し感光板を使つた時、帯電劣化により
暗部電位の低下が生じる。(2) When a photosensitive plate is used repeatedly, the dark area potential decreases due to charging deterioration.
(3) 暗部画質に不均一性(ガサツキ)が生じる。(3) Unevenness (roughness) occurs in the image quality of dark areas.
従来このような問題を解決するために、感光体
作製時の結着剤を選択したり、防湿剤を混入する
方法が取られていたが、本発明は、光導電体自体
を処理して耐湿性、画像性等に優れた光導電体お
よびその製造方法を提供することを主たる目的と
する。 Conventionally, in order to solve this problem, methods were used to select a binder when producing a photoconductor or to mix a moisture-proofing agent into the photoconductor, but in the present invention, the photoconductor itself is treated to make it moisture-resistant. The main purpose of the present invention is to provide a photoconductor with excellent properties, image properties, etc., and a method for manufacturing the same.
本発明による光導電体は、硫化カドミウム粉末
表面に一般式Me2O・NSiO2(但し、MeはK又は
Na、Nは正の数を表わす)で表わされるアルカ
リ金属ケイ酸塩が付与され、さらにアルカリ土類
金属化合物および周期率表第a族化合物から選
択された化合物が付着されて成ることを特徴とす
るものである。 The photoconductor according to the present invention has the general formula Me 2 O・NSiO 2 (where Me is K or
An alkali metal silicate represented by Na, N represents a positive number) is added thereto, and a compound selected from an alkaline earth metal compound and a group a compound of the periodic table is attached. It is something to do.
本発明による光導電体についての改善された特
性はアルカリ金属ケイ酸塩およびアルカリ土類金
属化合物もしくは周期率表第a族化合物に因る
ものである。 The improved properties for the photoconductor according to the invention are due to the alkali metal silicates and alkaline earth metal compounds or compounds of group a of the periodic table.
本発明に用いられるアルカリ土類金属化合物と
しては、カルシウム、ストロンチウム、バリウ
ム、ラジウム、ベリリウムおよびマグネシウムの
元素の又はこれらの元素を含む化合物であり、特
に、マグネシウム、バリウム、ストロンチウムお
よびカルシウムの有機酸塩、硫酸塩、硝酸塩、亜
硝酸塩などが好適である。このような化合物の代
表的なものとしては、例えば、
(CH3COO)2BaH2O、(C3H5O2)2BaH2O、
MgHC6H5O7・5H2O、Mg(C3H5O3)・3H2O、Ca
(CHO2)2、Ca(C3H5O3)25H2O、Ca
(C3H5O2)2・H2O、Sr(C2H3O2)2、Sr
(CHO2)2、Sr(C3H5O3)・3H2O、MgSO4・
7H2O、MgSO4、CaSO4・2H2O、CaSO4・1/2
H2O、CaSO4、Ca(NO3)2・4H2O、Ca
(NO3)2、Ba(NO3)2、Mg(NO3)2・6H2O、Sr
(NO3)2、Sr(NO3)2・4H2O、Ba(NO2)2、Mg
(NO2)2・3H2O、Ca(NO2)2・H2O、Ca
(NO2)2・4H2O、また、周期率表第a族化合物
とはホウ素、アルミニウム、ガリウム、インジウ
ム、およびタリウムの元素の又はこれらの元素を
含す化合物であり特に、アルミニウム、インジウ
ム、ガリウム、タリウムの硫酸塩、硝酸塩、亜硝
酸塩アルミン酸化合物、有機酸塩およびセレン酸
塩などが好適である。これらの化合物の代表的な
ものとして、例えば、Al2(SO4)3・18H2O、Al2
(SO4)3、Ga2(SO4)3・18H2O、Ga2(SO4)3、In2
(SO4)3・9H2O、In2(SO4)3、Tl2SO4、AlTl
(SO4)2、12H2O、NaAlO2、BaAl2O4、Al
(NO3)3・9H2O、Ga(NO3)2・nH2O、In
(NO3)3・3H2O、In(NO3)3・41/2H2O、
TlNO3、TlNO2、Ga(Se4O)・16H2O、In2
(SeO4)3・10H2O、Tl2C2O4、Tl2SeO4、
Tl2C4H4O6などである(nは正の数である)。 The alkaline earth metal compounds used in the present invention include compounds of or containing the elements calcium, strontium, barium, radium, beryllium, and magnesium, particularly organic acid salts of magnesium, barium, strontium, and calcium. , sulfates, nitrates, nitrites, etc. are suitable. Representative examples of such compounds include, for example,
(CH 3 COO) 2 BaH 2 O, (C 3 H 5 O 2 ) 2 BaH 2 O,
MgHC 6 H 5 O 7・5H 2 O, Mg (C 3 H 5 O 3 )・3H 2 O, Ca
(CHO 2 ) 2 , Ca (C 3 H 5 O 3 ) 2 5H 2 O, Ca
(C 3 H 5 O 2 ) 2・H 2 O, Sr(C 2 H 3 O 2 ) 2 , Sr
(CHO 2 ) 2 , Sr(C 3 H 5 O 3 )・3H 2 O, MgSO 4・
7H2O , MgSO4 , CaSO4・2H2O , CaSO4・1/2
H 2 O, CaSO 4 , Ca (NO 3 ) 2・4H 2 O, Ca
(NO 3 ) 2 , Ba (NO 3 ) 2 , Mg (NO 3 ) 2・6H 2 O, Sr
(NO 3 ) 2 , Sr(NO 3 ) 2・4H 2 O, Ba(NO 2 ) 2 , Mg
(NO 2 ) 2・3H 2 O, Ca (NO 2 ) 2・H 2 O, Ca
(NO 2 ) 2・4H 2 O, and compounds of group a of the periodic table are compounds of or containing the elements boron, aluminum, gallium, indium, and thallium, and in particular aluminum, indium, Sulfates, nitrates, nitrites, aluminate compounds, organic acid salts, and selenate of gallium and thallium are suitable. Representative examples of these compounds include, for example, Al 2 (SO 4 ) 3・18H 2 O, Al 2
(SO 4 ) 3 , Ga 2 (SO 4 ) 3・18H 2 O, Ga 2 (SO 4 ) 3 , In 2
(SO 4 ) 3・9H 2 O, In 2 (SO 4 ) 3 , Tl 2 SO 4 , AlTl
( SO4 ) 2 , 12H2O , NaAlO2 , BaAl2O4 , Al
(NO 3 ) 3・9H 2 O, Ga (NO 3 ) 2・nH 2 O, In
(NO 3 ) 3・3H 2 O, In(NO 3 ) 3・41/2H 2 O,
TlNO 3 , TlNO 2 , Ga(Se 4 O)・16H 2 O, In 2
(SeO 4 ) 3・10H 2 O, Tl 2 C 2 O 4 , Tl 2 SeO 4 ,
such as Tl 2 C 4 H 4 O 6 (n is a positive number).
本発明に用いられるアルカリ金属ケイ酸塩とし
ては一般式がMe2O・NSiO2(但し、MeはK又は
Na、N=正の数)で示されるものが用いられ
る。このアルカリ金属ケイ酸塩のアルカリは
Na、Kが好ましく、Liについては水に対する溶
解性が乏しいので好ましくないばかりか、被覆力
が不完全となる。又、Me2OとSiO2との比即ち、
Nは、2.0〜3.6の範囲が特に好適である。この範
囲のものは、透明性および硫化カドミウムとの密
着性に特に優れている。 The alkali metal silicate used in the present invention has a general formula of Me 2 O・NSiO 2 (where Me is K or
Na, N=positive number) is used. The alkali of this alkali metal silicate is
Na and K are preferable, and Li is not preferable because it has poor solubility in water, but also provides incomplete coverage. Also, the ratio of Me 2 O to SiO 2 , that is,
A particularly suitable range for N is 2.0 to 3.6. Those in this range are particularly excellent in transparency and adhesion to cadmium sulfide.
本発明による光導電体の製造は、通常、硫化カ
ドミウム粉末をアルカリ金属ケイ酸塩水溶液に混
合させ、次いでアルカリ土類金属化合物および第
a族化合物から選択された化合物と混合するこ
とにより行われる。アルカリ金属ケイ酸塩水溶液
の処理によつて、硫化カドミウム粉末の表面の全
部又は1部がアルカリ金属ケイ酸塩で被覆され、
アルカリ土類金属化合物および第a族化合物か
ら選ばれた化合物の添加によつて、これらの化合
物は主としてアルカリ金属ケイ酸塩の被覆の上に
付着するものである。アルカリ金属ケイ酸塩水溶
液の濃度および量は適宜設定されてよいものであ
るが、使用される水溶液の量は、硫化カドミウム
粉末に対して、アルカリ金属ケイ酸塩が固型成分
で0.001〜0.1wt%特には0.005〜0.05wt%となる
ようにされるりが好適である。また、アルカリ土
類金属化合物及び第a族化合物から選ばれる化
合物の添加量は、硫化カドミウム粉末が含有され
ている水溶液中において硫化カドミウム粉末に対
して0.0005〜0.05wt%、特には0.001〜0.01wt%
となるようにするのが好適である。 The production of the photoconductor according to the invention is usually carried out by mixing cadmium sulfide powder with an aqueous alkali metal silicate solution and then with a compound selected from alkaline earth metal compounds and group a compounds. By treatment with an aqueous alkali metal silicate solution, all or part of the surface of the cadmium sulfide powder is coated with an alkali metal silicate,
By adding compounds selected from alkaline earth metal compounds and group a compounds, these compounds are primarily deposited onto the alkali metal silicate coating. The concentration and amount of the alkali metal silicate aqueous solution may be set as appropriate, but the amount of the aqueous solution used is 0.001 to 0.1 wt of the alkali metal silicate as a solid component relative to the cadmium sulfide powder. %, particularly 0.005 to 0.05 wt%. Further, the amount of the compound selected from alkaline earth metal compounds and Group A compounds added is 0.0005 to 0.05 wt%, particularly 0.001 to 0.01 wt%, based on the cadmium sulfide powder in the aqueous solution containing the cadmium sulfide powder. %
It is preferable to make it so that
光導電体の製造方法についてさらに具体的に例
を説明する。 A more specific example of the method for manufacturing a photoconductor will be described.
前記硫化カドミウム粉末にMe2O・nSiO2
(Me:K又はNa)の水溶液を加え、これをスタ
ーラー等で十分撹拌し、その後15〜16分間放置
し、アルカリ金属ケイ酸塩で硫化カドミウムを被
覆せしめ、続いてアルカリ土類金属化合物又は第
a族化合物の中から少なくとも1つを硫化カド
ミウムを含有している水溶液に添加混合し、次に
添加したアルカリ土類、又はa族化合物を添加
後はゆつくり撹拌し、硫化カドミウムケイ酸塩懸
濁液とよく混合し、その後静止することによりこ
れらの化合物の作用により沈殿さす。次いで上澄
液中の残留する不要イオン及び十分付着されてい
ないアルカリ土類又はa族元素イオン及び陰イ
オンを純水洗浄することにより除去する。その
後、水分を気化するのに十分だが被覆層を破壊し
ない程度の50〜150℃の温度で十分乾燥する。 Me 2 O・nSiO 2 in the cadmium sulfide powder
Add an aqueous solution of (Me: K or Na), stir this thoroughly with a stirrer, etc., then leave it for 15 to 16 minutes to coat the cadmium sulfide with the alkali metal silicate, and then add the alkaline earth metal compound or cadmium sulfide. Add and mix at least one of the group a compounds to an aqueous solution containing cadmium sulfide, then gently stir after adding the added alkaline earth or group a compound to dissolve the cadmium silicate sulfide suspension. Mix well with the suspension and then let it stand still to allow the action of these compounds to precipitate. Next, unnecessary ions remaining in the supernatant liquid and alkaline earth or group a element ions and anions that are not sufficiently attached are removed by washing with pure water. It is then thoroughly dried at a temperature of 50 to 150°C, sufficient to evaporate the moisture but not destroy the coating layer.
光導電層は通常光導電体粉末を結着剤に分散含
有させて形成される。結着剤としては、例えば、
塩化ビニル樹脂、酢酸ビニル樹脂、塩ビ・酢ビ共
重合体樹脂、アクリル樹脂、ウレタン樹脂、ポリ
エステル樹脂、エポキシ樹脂、メラミン樹脂、シ
リコン樹脂等の各種の樹脂が用いられる。光導電
層を形成する樹脂の含有量は、光導電性材料100
重量部に対して0.5〜50重量部、特には5〜20重
量部が好適である。 The photoconductive layer is usually formed by dispersing photoconductor powder in a binder. As the binder, for example,
Various resins are used, such as vinyl chloride resin, vinyl acetate resin, vinyl chloride/vinyl acetate copolymer resin, acrylic resin, urethane resin, polyester resin, epoxy resin, melamine resin, and silicone resin. The content of the resin forming the photoconductive layer is 100% of the photoconductive material.
It is preferably 0.5 to 50 parts by weight, particularly 5 to 20 parts by weight.
絶縁層を備えた感光体については、絶縁層の形
成に用いられる樹脂として、通常の各種の樹脂が
適宜用いられるものである。例えば、ポリエチレ
ン、ポリエステル、ポリプロピレン、ポリスチレ
ン、ポリ塩化ビニール、ポリ酢酸ビニール、アク
リル樹脂、ポリカーポネート、シリコン樹脂、弗
素樹脂、エポキシ樹脂等の樹脂を用い得る。 Regarding the photoconductor having an insulating layer, various ordinary resins can be appropriately used as the resin used to form the insulating layer. For example, resins such as polyethylene, polyester, polypropylene, polystyrene, polyvinyl chloride, polyvinyl acetate, acrylic resin, polycarbonate, silicone resin, fluororesin, and epoxy resin can be used.
通常絶縁層の厚さは、0.1〜100μ、特には0.1
〜50μに設定される。支持体は、ステンレス、
銅、アルミニウム、錫などの金属板、紙、シー
ト、樹脂フイルムなど任意の材料から形成され
る。支持体は必要に応じて省略される。 Usually the thickness of the insulation layer is 0.1~100μ, especially 0.1
Set to ~50μ. The support is made of stainless steel.
It is formed from any material such as a metal plate such as copper, aluminum, or tin, paper, sheet, or resin film. The support may be omitted if necessary.
光導電層の厚さは、使用する光導電物質の種類
や特性にもよるが一般には、5〜100μ、特には
10〜50μ程度が好適である。 The thickness of the photoconductive layer depends on the type and characteristics of the photoconductive material used, but is generally 5 to 100 μm, particularly
Approximately 10 to 50μ is suitable.
本発明による光導電体の作用機構については明
らかでないが、アルカリ土類金属化合物又は第
a族化合物がアルカリ金属ケイ酸塩被覆とあいま
つて光導電体の表面特性を改良し、即ち荷電調整
によるバリアーの低下等による抵抗調整機能及び
ケイ酸塩による保護被覆形成により電子写真特性
を改良すると考えられる。 Although the mechanism of action of the photoconductor according to the invention is not clear, the alkaline earth metal compound or Group A compound, in combination with the alkali metal silicate coating, improves the surface properties of the photoconductor, i.e., the barrier by charge control. It is thought that the electrophotographic properties are improved by the resistance adjustment function due to the reduction of the silicates and the formation of a protective coating by the silicate.
以下実施例について具体的に説明する。 Examples will be specifically described below.
実施例 1
付活剤としてClとCuが添加されたCdS:Cu、
Cl光導電体100gに、1%のK2O・3.0SiO2溶液を
1c.c.適当量の純水で希釈し加え、よく光導電体と
撹拌した。そのあと30分間静置し、次いで0.010
g(CH3COO)2BaH2Oを適当量水に溶かした溶
液を加え、ゆるやかに撹拌し、続いて再し静置し
た。その後上澄液のほぼ70%程度を除去し水洗、
洗浄し、60℃で乾燥し被覆光導電体を得た。この
光導電体をアクリル系樹脂を結着剤とし光導電層
を形成し、25μのポリエチレンテレフタレートフ
イルムをラミネートし電子写真感光体とした。次
いで、1次帯電として正コロナ帯電2次帯電とし
て交流コロナ帯電を加えると同時に光像を照射し
全面露光を加え評価した。この時のコントラスト
電位540Vと良好であり、次いでこれを100%RH
中に1日放置後再びコントラスト電位を測定した
所513Vとその保有率が95%ときわめて良好であ
つた。又、この感光板を一万回帯電露光後のコン
トラスト電位は520Vでその保有率は96%でこの
特性を満足すべきものであつた。又、画像評価し
た所、ガサツキの全くない良質の画像を提供し
た。尚この時、同時に感光体とした処理されてい
ないCdSを使つたものは、初期のコントラスト電
位が560Vで、100%RH中に1日放置後のコント
ラスト保有率は70%、1万回帯電劣化後のコント
ラスト保有率は75%であつた。又、画質はややガ
サツキがあつた。Example 1 CdS with Cl and Cu added as activators: Cu,
1 c.c. of a 1% K 2 O.3.0SiO 2 solution diluted with an appropriate amount of pure water was added to 100 g of a Cl photoconductor, and the mixture was thoroughly stirred with the photoconductor. After that, let it stand for 30 minutes, then 0.010
A solution of an appropriate amount of g(CH 3 COO) 2 BaH 2 O dissolved in water was added, gently stirred, and then allowed to stand again. After that, approximately 70% of the supernatant liquid was removed and washed with water.
The coated photoconductor was washed and dried at 60°C to obtain a coated photoconductor. A photoconductive layer was formed on this photoconductor using an acrylic resin as a binder, and a 25 μm polyethylene terephthalate film was laminated thereon to obtain an electrophotographic photoreceptor. Next, positive corona charging was performed as primary charging, alternating current corona charging was applied as secondary charging, and at the same time, a light image was irradiated to expose the entire surface for evaluation. At this time, the contrast potential was 540V, which was good, and then this was adjusted to 100%RH.
When the contrast potential was measured again after being left in the room for one day, it was found to be 513V, and the retention rate was 95%, which was very good. Further, after this photosensitive plate was charged and exposed 10,000 times, the contrast potential was 520V, and the retention rate was 96%, which should satisfy this characteristic. Furthermore, when the image was evaluated, it provided a high-quality image with no roughness at all. At this time, at the same time, when untreated CdS was used as a photoconductor, the initial contrast potential was 560V, and the contrast retention rate after being left in 100% RH for one day was 70%, and there was no deterioration due to charging after 10,000 cycles. The subsequent contrast retention rate was 75%. Also, the image quality was a little rough.
実施例 2
CdS:Cu、Cl光導電体100gに1%のK2O・
3.3SiO2溶液を0.8c.c.適当量の純水で希釈し加え、
よく光導電体と撹拌した。その後1時間静置し、
次いで、0.005gのAl2(SO4)3・18H2Oを適当量
の水にとかした溶液を添加し撹拌、静置後洗浄し
乾燥した。この光導電体を実施例1と同様に感光
体として評価したところ、コントラスト電位
525Vで1万回帯電劣化後のコントラスト保有率
は93%、画質的にも問題はなかつた。又、耐湿保
有率は通常の未処理CdSと同程度であつた。Example 2 CdS: 1% K 2 O to 100 g of Cu, Cl photoconductor.
3.3SiO 2 solution was diluted with 0.8cc of appropriate amount of pure water and added.
Stir well with photoconductor. Then let it stand for 1 hour,
Next, a solution of 0.005 g of Al 2 (SO 4 ) 3.18H 2 O dissolved in an appropriate amount of water was added, stirred, allowed to stand, washed, and dried. When this photoconductor was evaluated as a photoreceptor in the same manner as in Example 1, the contrast potential was
After being charged 10,000 times at 525V, the contrast retention rate was 93%, and there were no problems with image quality. Moreover, the moisture resistance retention rate was comparable to that of ordinary untreated CdS.
実施例 3
CdS:Cu、Cl光導電体100gに1%のNa2O・
2.5SiO2溶液を05c.c.適当量の純水で希釈し加えよ
く光導電体と撹拌分散させた。そのあと45分間静
置後0.001gのCa(NO3)24H2Oを適当量の水にと
かした溶液を添加し、撹拌静置後洗浄し乾燥し
た。この光導電体を実施例1と同様に感光体とし
て評価したところコントラスト電位500Vで、画
質的にもガサツキがなく優れていた。Example 3 CdS: 1% Na 2 O to 100 g of Cu, Cl photoconductor.
The 2.5SiO 2 solution was diluted with an appropriate amount of pure water and stirred and dispersed with the photoconductor. Thereafter, the mixture was allowed to stand for 45 minutes, and then a solution of 0.001 g of Ca(NO 3 ) 2 4H 2 O dissolved in an appropriate amount of water was added, stirred and left to stand, then washed and dried. When this photoconductor was evaluated as a photoreceptor in the same manner as in Example 1, the contrast potential was 500 V, and the image quality was excellent without roughness.
実施例 4
CdS;Cu、Cl光導電体100gに、1%のK2O・
3.5SiO2溶液0.8c.c.適当量の純水で希釈し加えよく
光導電体と分散させた。静置後、0.004gを水に
溶かしたMgSO4・7H2O溶液を添加し、撹拌静置
後洗浄し乾燥した。この光導電体を実施例1と同
様に感光体として評価した所コントラスト電位
500V、1万回帯電劣化後のコントラスト保有率
90%であつた。Example 4 Add 1% K 2 O to 100 g of CdS; Cu, Cl photoconductor.
0.8 cc of 3.5SiO 2 solution was diluted with an appropriate amount of pure water and added to the solution to be well dispersed with the photoconductor. After standing still, a MgSO 4 .7H 2 O solution of 0.004 g dissolved in water was added, and the mixture was stirred and left standing, then washed and dried. This photoconductor was evaluated as a photoreceptor in the same manner as in Example 1, and the contrast potential was
Contrast retention rate after charging deterioration at 500V for 10,000 times
It was 90%.
実施例 5
CdS:Cu、Cl光導電体100gに、1%のK2O・
3.0SiO2溶液を0.9c.c.適当量の純水で希釈し加え、
よく光導電体と分散させた。静置後、0.010g
(CH3COO)2BaH2Oを適当量の水に溶かした溶液
を加え、撹拌静置後洗浄乾燥した。この光導電体
を多価イソシアネート化合物とボリオール樹脂か
らなる結合剤を用い光導電性絶縁層としての機能
を有する電子写真感光体とした。Example 5 CdS: 1% K 2 O to 100 g of Cu, Cl photoconductor.
Dilute 3.0SiO 2 solution with 0.9cc of pure water and add.
Well dispersed with photoconductor. After standing still, 0.010g
A solution of (CH 3 COO) 2 BaH 2 O dissolved in an appropriate amount of water was added, and the mixture was stirred and allowed to stand, then washed and dried. This photoconductor was made into an electrophotographic photoreceptor having a function as a photoconductive insulating layer using a binder consisting of a polyvalent isocyanate compound and a polyol resin.
次いで負コロナ帯電によつて帯電後、光像照射
し評価した。 Next, after being charged by negative corona charging, a light image was irradiated and evaluated.
この時のコントラスト電位は450Vで100%RH
中に1日放置後のコントラスト保有率は80%であ
つた。 The contrast potential at this time is 450V and 100%RH
The contrast retention rate after being left in the container for one day was 80%.
又、画像評価した所、良好な画像を提供した。
尚、この時、同時に感光体とした処理されていな
いCdSを使つたものは、初期のコントラスト電位
が460Vで、100%RHに1日放置後のコントラス
ト保有率は40%で、画質はややガサツキがあつ
た。 In addition, when the image was evaluated, it provided a good image.
At this time, when untreated CdS was used as a photoreceptor, the initial contrast potential was 460V, and the contrast retention rate after being left at 100%RH for one day was 40%, and the image quality was a little rough. It was hot.
Claims (1)
NSiO2(但し、MeはK又はNa、Nは正の数を表
わす)で表わされるアルカリ金属ケイ酸塩が付与
され、さらにアルカリ土類金属化合物および周期
律表第a族化合物から選択された化合物が付着
されて成ることを特徴とする電子写真光導電体。 2 硫化カドミウム粉末と一般式Me2O・NSiO2
(但し、MeはK又はNa、Nは正の数を表わす)
で表わされるアルカリ金属ケイ酸塩溶液を十分混
合する工程およびアルカリ土類金属化合物および
周期律表第a族化合物から選択された化合物と
十分混合する工程を有することを特徴とする電子
写真光導電体の製造方法。[Claims] 1. General formula Me 2 O on the surface of cadmium sulfide powder.
A compound to which an alkali metal silicate represented by NSiO 2 (Me represents K or Na, and N represents a positive number) and is further selected from alkaline earth metal compounds and Group a compounds of the periodic table. An electrophotographic photoconductor comprising: attached thereto. 2 Cadmium sulfide powder and general formula Me 2 O・NSiO 2
(However, Me represents K or Na, and N represents a positive number)
An electrophotographic photoconductor comprising the steps of sufficiently mixing an alkali metal silicate solution represented by: and sufficiently mixing with an alkaline earth metal compound and a compound selected from Group a compounds of the periodic table. manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5182278A JPS54143642A (en) | 1978-04-28 | 1978-04-28 | Electrophotographic photoconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5182278A JPS54143642A (en) | 1978-04-28 | 1978-04-28 | Electrophotographic photoconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54143642A JPS54143642A (en) | 1979-11-09 |
JPS6133184B2 true JPS6133184B2 (en) | 1986-07-31 |
Family
ID=12897576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5182278A Granted JPS54143642A (en) | 1978-04-28 | 1978-04-28 | Electrophotographic photoconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54143642A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6395739A (en) * | 1986-10-09 | 1988-04-26 | Ishikawajima Harima Heavy Ind Co Ltd | Remote control device for ship navigation signal light |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5518425A (en) * | 1978-07-27 | 1980-02-08 | Asahi Chem Ind Co Ltd | Heat-resistant molded article and method for molding the same |
JP4770613B2 (en) * | 2006-07-10 | 2011-09-14 | 富士ゼロックス株式会社 | Electrophotographic photosensitive member, image forming apparatus, and process cartridge |
-
1978
- 1978-04-28 JP JP5182278A patent/JPS54143642A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6395739A (en) * | 1986-10-09 | 1988-04-26 | Ishikawajima Harima Heavy Ind Co Ltd | Remote control device for ship navigation signal light |
Also Published As
Publication number | Publication date |
---|---|
JPS54143642A (en) | 1979-11-09 |
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