JPS613317B2 - - Google Patents
Info
- Publication number
- JPS613317B2 JPS613317B2 JP59154021A JP15402184A JPS613317B2 JP S613317 B2 JPS613317 B2 JP S613317B2 JP 59154021 A JP59154021 A JP 59154021A JP 15402184 A JP15402184 A JP 15402184A JP S613317 B2 JPS613317 B2 JP S613317B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59154021A JPS6036393A (en) | 1984-07-26 | 1984-07-26 | Production of gaas single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59154021A JPS6036393A (en) | 1984-07-26 | 1984-07-26 | Production of gaas single crystal |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP459481A Division JPS6042198B2 (en) | 1981-01-17 | 1981-01-17 | Manufacturing method of Gap crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6036393A JPS6036393A (en) | 1985-02-25 |
| JPS613317B2 true JPS613317B2 (en) | 1986-01-31 |
Family
ID=15575168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59154021A Granted JPS6036393A (en) | 1984-07-26 | 1984-07-26 | Production of gaas single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6036393A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2537605B2 (en) * | 1986-09-19 | 1996-09-25 | 株式会社ジャパンエナジー | Method for producing compound semiconductor single crystal |
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1984
- 1984-07-26 JP JP59154021A patent/JPS6036393A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6036393A (en) | 1985-02-25 |