JPS6132940A - Liquid metal ion source - Google Patents

Liquid metal ion source

Info

Publication number
JPS6132940A
JPS6132940A JP15286884A JP15286884A JPS6132940A JP S6132940 A JPS6132940 A JP S6132940A JP 15286884 A JP15286884 A JP 15286884A JP 15286884 A JP15286884 A JP 15286884A JP S6132940 A JPS6132940 A JP S6132940A
Authority
JP
Japan
Prior art keywords
ion
ion source
liquid metal
source material
acceleration electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15286884A
Other languages
Japanese (ja)
Inventor
Hiroyasu Shichi
広康 志知
Hifumi Tamura
田村 一二三
Osami Okada
岡田 修身
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15286884A priority Critical patent/JPS6132940A/en
Publication of JPS6132940A publication Critical patent/JPS6132940A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/26Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To prevent the ion source material evaporated from an ion generating source from being condensed in an ion acceleration electrode and the pollution resulting from the ion source material from affecting the ion acceleration electrode and such by heating the ion acceleration electrode, lens system, and the wall of the ion source container. CONSTITUTION:A resistance heating mechanism 12 that uses a tungusten heater is mounted on an ion acceleration electrode 3, lens system 6, and ion source container 9 and a cooling panel 14 connected to a liquid nitrogen collector 13 is arranged. After vacuum is exhausted, a trap mechanism that uses a cooling panel 14 and the resistance heating mechanims 12 are operated. As a result, the ion source material evaporated from the ion generating source is trapped in the cooling panel instead of being condensed in the ion acceleration electrode and such. Consequently, an ion beam 7 normally actuates on a sample 8. In addition, the ion source material is not polluted by the heating of an observation window and the observation of the inner part of the ion source cannot be prevented.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は液体金属イオン源装置に関するものでイオン加
速電極、レンズ系、イオン源容器壁、排気系などへのイ
オン源材料による汚染を防ぐように構成されたイオン源
に関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a liquid metal ion source device, and is designed to prevent contamination of ion accelerating electrodes, lens systems, ion source container walls, exhaust systems, etc. by ion source materials. Relating to an ion source configured.

〔発明の背景〕[Background of the invention]

第1図に従来の液体金属イオン源の一例を示す。 FIG. 1 shows an example of a conventional liquid metal ion source.

このタイプの液体金属イオン源は、例えば特開昭59−
31541号公報に記載されている。イオン生成源はチ
ップ加熱用フィラメント1、エミッタチップ2、イオン
加速電極3、およびイオン源材料4を保持する坩堝5な
どにより構成されている。坩堝5は先端を尖らせた棒状
のエミッタチップ2を同軸上に保持しており、坩堝5の
下端面壁にはエミッタチップ2の先端を外部に貫通させ
る開口があり、坩堝の内部の下部、エミッタチップ2の
先端部外周にイオン源材料が装填されている。6はイオ
ンビーム7を集束する1個あるいは複数個からなるレン
ズ系(1個だけ図示)。8はイオンビーム7が照射する
試料である。9はイオン源容器で真空排気系10、Ii
l!察窓11を備えている。
This type of liquid metal ion source is, for example, JP-A-59-
It is described in Publication No. 31541. The ion generation source includes a chip heating filament 1, an emitter chip 2, an ion accelerating electrode 3, a crucible 5 holding an ion source material 4, and the like. The crucible 5 coaxially holds a rod-shaped emitter chip 2 with a pointed tip, and the bottom wall of the crucible 5 has an opening through which the tip of the emitter tip 2 passes through to the outside. An ion source material is loaded on the outer periphery of the tip of the chip 2 . Reference numeral 6 denotes a lens system consisting of one or more lenses (only one lens is shown) that focuses the ion beam 7. 8 is a sample irradiated with the ion beam 7; 9 is an ion source container and a vacuum exhaust system 10, Ii
l! It is equipped with 11 viewing windows.

以上のような構成を備えた第1図の如き従来装置は次の
ように動作する。真空排気後フィラメント1を加熱し、
その結果熱放射によりエミッタチップ2の先端部から加
熱される。エミッタチップ2の先端部が加熱されると熱
伝導によりイオン源材料4が加熱溶融され、エミッタチ
ップ2の先端にイオン源材料4が連続的に供給されるよ
うになる。一方エミッタチップ2の先端が加熱されてお
り、イオン源材料4がイオン化され、これがイオンビー
ム7として引き出される。引き出されたイオンビームは
6のレンズ系で制御され試料8に照射される。
The conventional device as shown in FIG. 1 having the above-described configuration operates as follows. After evacuation, heat the filament 1,
As a result, the tip of the emitter tip 2 is heated by thermal radiation. When the tip of the emitter tip 2 is heated, the ion source material 4 is heated and melted by thermal conduction, and the ion source material 4 is continuously supplied to the tip of the emitter tip 2. On the other hand, the tip of the emitter tip 2 is heated, and the ion source material 4 is ionized, which is extracted as an ion beam 7. The extracted ion beam is controlled by a lens system 6 and irradiated onto a sample 8.

上述した従来の液体金属イオン源は、イオンビーム7や
、エミッタチップ2の先端周辺部等から蒸発したイオン
源材料がイオン加速電極3、レンズ系6、イオン源容器
9の壁、観察窓11などに付着凝縮し、゛これらを著し
く汚染し、その結果、イオン加速電極3、レンズ系6の
正常動作が妨げられたり、観察窓11からの内部観察が
困難になるなどの欠点を有していた。
In the conventional liquid metal ion source described above, the ion source material evaporated from the ion beam 7 and the periphery of the tip of the emitter chip 2 is transferred to the ion accelerating electrode 3, the lens system 6, the wall of the ion source container 9, the observation window 11, etc. The ion accelerating electrode 3 and the lens system 6 are prevented from functioning properly, and internal observation through the observation window 11 becomes difficult. .

〔発明の目的〕[Purpose of the invention]

本発明の目的は、液体金属イオン源における上記問題点
を解決し、イオン源材料のイオン加速電極、レンズ系な
どへの汚染を防止した、液体金属イオン源を提供するこ
とにある。
An object of the present invention is to provide a liquid metal ion source that solves the above-mentioned problems in liquid metal ion sources and prevents contamination of the ion accelerating electrode, lens system, etc. of the ion source material.

〔発明の概要〕[Summary of the invention]

本発明の特徴は、液体金属イオン源において、イオン加
速電極、レンズ系、イオン源容器の壁を加熱しておき、
イオン生成源より蒸発したイオン源材料が、イオン加速
電極などに凝縮することを防ぎ、イオン源材料による汚
染がイオン加速電極などにおよぶのを防ぐ点にある。
A feature of the present invention is that in a liquid metal ion source, the ion accelerating electrode, lens system, and wall of the ion source container are heated;
The purpose is to prevent the ion source material evaporated from the ion generation source from condensing on the ion accelerating electrode, etc., and to prevent contamination by the ion source material from reaching the ion accelerating electrode, etc.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第2図により説明する。これ
は第1図の従来装置に、タングステンヒータによる抵抗
加熱機構12をイオン加速電極3、レンズ系6、イオン
源容器9に取り付け、さらに液体窒素溜め13に接続さ
れた冷却パネル14を配置したものである。
An embodiment of the present invention will be described below with reference to FIG. This is a conventional device shown in FIG. 1 in which a resistance heating mechanism 12 using a tungsten heater is attached to an ion accelerating electrode 3, a lens system 6, and an ion source container 9, and a cooling panel 14 connected to a liquid nitrogen reservoir 13 is further arranged. It is.

動作原理は次の通りである。真空排気後、冷却パネル1
4によるトラップ機構、抵抗加熱機構12を動作させる
。その後イオン生成源を動作させイオンビーム7を引き
出し、試料に照射するまでの動作は第1図従来装置の場
合と同じである。
The operating principle is as follows. After vacuum evacuation, cooling panel 1
4, the trap mechanism and resistance heating mechanism 12 are operated. Thereafter, the ion generation source is operated, the ion beam 7 is extracted, and the operation up to irradiation of the sample is the same as that of the conventional apparatus shown in FIG.

イオン生成源から蒸発したイオン源材料は、イオン加、
速電極などに凝縮せず、冷却パネルにトラップされる。
The ion source material evaporated from the ion source is subjected to ion addition,
It does not condense on the fast electrodes and is trapped on the cooling panel.

この結果イオンビーム7は正常に試料8に作用する。ま
た観察窓の加熱により、イオン源材料の汚染がなく、イ
オン源内部のt!A察は妨げら匙ない。例えばこのイオ
ン源をイオン打ち込みに応用した場合、目的どおりイオ
ン打ち込みが可能であった。
As a result, the ion beam 7 acts normally on the sample 8. In addition, heating of the observation window eliminates contamination of the ion source material, and the t! A-san will not interfere. For example, when this ion source was applied to ion implantation, it was possible to implant ions as intended.

なお、上述の実施例において、エミッタチップと坩堝を
持つ型のイオン生成源を用いているが、他の、エミッタ
チップを用いず坩堝のみの型、また坩堝を用いずエミッ
タチップのみを用いる型など一般の液体金属イオン源に
応用できる。
In the above embodiment, an ion generation source having an emitter tip and a crucible is used, but other types such as a type that uses only a crucible without using an emitter tip, a type that uses only an emitter tip without using a crucible, etc. It can be applied to general liquid metal ion sources.

また上述の実施例において、イオン加速電極などの加速
機構として、タングステンヒータによる抵抗加熱機構を
用いたが、赤外線ランプによる加熱レーザーを用いた加
熱、電子線による加熱など、イオン加速電極などを必要
な温度まで加熱できるものであればよい。
In addition, in the above embodiment, a resistance heating mechanism using a tungsten heater was used as an acceleration mechanism for the ion accelerating electrode, etc., but heating using an infrared lamp heating laser, heating using an electron beam, etc. Any material that can be heated to a certain temperature will suffice.

また固定した加熱源による加熱ではなく、加熱源を可動
なものとしても良く、加熱位置を選択する手段を備える
ことも有効である。
Furthermore, instead of heating using a fixed heating source, the heating source may be a movable one, and it is also effective to provide means for selecting the heating position.

゛また上述の実施例において、トラップ機構として、液
体窒素溜めに接続した冷却パネルを用いたが、蒸発した
イオン源材料を凝縮できるものであればよい。  ゛ 又、トラップ機構の設置位置は本実施例の他、レンズ位
置、加速電極付近、試料付近に設置しても効果がある。
Furthermore, in the above-described embodiment, a cooling panel connected to a liquid nitrogen reservoir was used as the trap mechanism, but any mechanism capable of condensing the evaporated ion source material may be used. In addition to this embodiment, the trap mechanism may also be installed at the lens position, near the accelerating electrode, or near the sample.

また上述の実施例において、本イオン源の応用例として
イオン打ち込みを上げたが、他の応用例としてイオンビ
ーム加工、イオンビーム露光、イオンビームを用いた計
測などがあり、一般のイオン源および一般のイオン源を
用いた各種装置に応用可能である。
In addition, in the above embodiments, ion implantation was mentioned as an application example of this ion source, but other application examples include ion beam processing, ion beam exposure, and measurement using ion beams. It can be applied to various devices using ion sources.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、液体金属イオン源において、イオン生
成源より蒸発したイオン源材料あるいはイオンビームに
よる他のイオン源構成要素への汚染を、加熱機構やトラ
ップ機構により防ぐことができるので、イオンビームの
試料への作用を目的どおり正常に行うことができる。
According to the present invention, in a liquid metal ion source, contamination of other ion source components by the ion source material evaporated from the ion generation source or the ion beam can be prevented by the heating mechanism and the trap mechanism. can act normally on the sample as intended.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例になるイオン源の要部縦断面図、第2図
は本発明の一実施例になるイオン源の要部縦断面図であ
る。 ■・・・フィラメント、2・・・エミッタチップ、3・
・・イオン加速電極、4・・・イオン源材料、5・・・
坩堝、6・・・レンズ系、7・・・イオンビーム、8・
・・試料、9・・・イオン源容器、10・・・真空排気
系、11・・・観察窓、12・・・抵抗加熱機構、13
・・・液体窒素溜め、14禎 1  図
FIG. 1 is a vertical cross-sectional view of a main part of an ion source as a conventional example, and FIG. 2 is a vertical cross-sectional view of a main part of an ion source according to an embodiment of the present invention. ■...Filament, 2...Emitter chip, 3...
...Ion accelerating electrode, 4...Ion source material, 5...
Crucible, 6... Lens system, 7... Ion beam, 8.
... Sample, 9... Ion source container, 10... Vacuum exhaust system, 11... Observation window, 12... Resistance heating mechanism, 13
...Liquid nitrogen reservoir, 14 1 Figure

Claims (1)

【特許請求の範囲】 1、液体金属イオン生成源とイオン加速電極とイオンビ
ームを絞るレンズ系とを備えた液体金属イオン源におい
て、イオン加速電極、レンズ系及びイオン源容器の壁な
どの加熱機構を備えたことを特徴とする液体金属イオン
源。 2、蒸発したイオン源材料をトラップする機構を備えた
ことを特徴とする特許請求の範囲第1項記載の液体金属
イオン源。 3、トラップを他の加熱部分と独立に装置外部より冷却
可能な機構を備えたことを特徴とする特許請求の範囲第
1項記載の液体金属イオン源。
[Claims] 1. In a liquid metal ion source comprising a liquid metal ion generation source, an ion accelerating electrode, and a lens system for focusing the ion beam, a heating mechanism for the ion accelerating electrode, the lens system, the wall of the ion source container, etc. A liquid metal ion source comprising: 2. The liquid metal ion source according to claim 1, further comprising a mechanism for trapping evaporated ion source material. 3. The liquid metal ion source according to claim 1, further comprising a mechanism that allows the trap to be cooled from the outside of the device independently of other heating parts.
JP15286884A 1984-07-25 1984-07-25 Liquid metal ion source Pending JPS6132940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15286884A JPS6132940A (en) 1984-07-25 1984-07-25 Liquid metal ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15286884A JPS6132940A (en) 1984-07-25 1984-07-25 Liquid metal ion source

Publications (1)

Publication Number Publication Date
JPS6132940A true JPS6132940A (en) 1986-02-15

Family

ID=15549872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15286884A Pending JPS6132940A (en) 1984-07-25 1984-07-25 Liquid metal ion source

Country Status (1)

Country Link
JP (1) JPS6132940A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135557A (en) * 1982-02-04 1983-08-12 Jeol Ltd Ion beam generating method and its device
JPS5931541A (en) * 1982-08-16 1984-02-20 Hitachi Ltd Ion source of liquid metal
JPS5956342A (en) * 1982-09-24 1984-03-31 Toshiba Corp Hollow cathode discharge device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135557A (en) * 1982-02-04 1983-08-12 Jeol Ltd Ion beam generating method and its device
JPS5931541A (en) * 1982-08-16 1984-02-20 Hitachi Ltd Ion source of liquid metal
JPS5956342A (en) * 1982-09-24 1984-03-31 Toshiba Corp Hollow cathode discharge device

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