JPS6129180Y2 - - Google Patents

Info

Publication number
JPS6129180Y2
JPS6129180Y2 JP7051079U JP7051079U JPS6129180Y2 JP S6129180 Y2 JPS6129180 Y2 JP S6129180Y2 JP 7051079 U JP7051079 U JP 7051079U JP 7051079 U JP7051079 U JP 7051079U JP S6129180 Y2 JPS6129180 Y2 JP S6129180Y2
Authority
JP
Japan
Prior art keywords
infrared
reflector
infrared radiation
present
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7051079U
Other languages
Japanese (ja)
Other versions
JPS55170780U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7051079U priority Critical patent/JPS6129180Y2/ja
Publication of JPS55170780U publication Critical patent/JPS55170780U/ja
Application granted granted Critical
Publication of JPS6129180Y2 publication Critical patent/JPS6129180Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は塗料の乾燥焼付、食品の保温、暖房な
どに利用される赤外線放射装置の改良に関するも
のである。
[Detailed Description of the Invention] The present invention relates to an improvement of an infrared radiation device used for drying and baking paint, keeping food warm, heating, etc.

この種の赤外線放射装置は第4図に示す如く反
射体6の内面に赤外線放射素子1を配置してなる
ものであるが、従来からその赤外線放射素子1と
しては同じ第4図に示す如く、断面円形をなす金
属パイプよりなる外囲体7に絶縁層8を介して発
熱体9を埋込み、外囲体7の周囲に赤外線の放射
効率を上げる目的でセラミツク例えばFe2O3
NiO,MnO2,ZrO2,Al2O3などの酸化物をプラ
ズマ溶射して放射層10を形成したものが用いら
れている。また反射体6としては湾曲形状のもの
が用いられている。
This type of infrared radiation device has an infrared radiation element 1 disposed on the inner surface of a reflector 6 as shown in FIG. A heating element 9 is embedded in an outer envelope 7 made of a metal pipe having a circular cross section through an insulating layer 8, and a ceramic material such as Fe 2 O 3 , Fe 2 O 3 , etc.
The emissive layer 10 is formed by plasma spraying an oxide such as NiO, MnO 2 , ZrO 2 , Al 2 O 3 or the like. Further, as the reflector 6, a curved one is used.

このような赤外線放射装置にあつては赤外線放
射素子1から放射された赤外線は反射体6で反射
されて被加熱物に照射される赤外線と被加熱物に
直接照射される赤外線とがあるわけであるが、上
記形状構造の赤外線放射素子1を用いた赤外線放
射装置にあつては、赤外線放射素子1と最短距離
になる被加熱物面は赤外線放射素子1から直接照
射される赤外線照射が強いことから均一加熱の照
射ができないという問題があつた。
In such an infrared radiation device, there are two types of infrared rays emitted from the infrared radiating element 1: infrared rays that are reflected by the reflector 6 and irradiated onto the heated object, and infrared rays that are directly irradiated onto the heated object. However, in the case of an infrared radiation device using the infrared radiation element 1 having the above-mentioned shape and structure, the infrared radiation irradiated directly from the infrared radiation element 1 is strong on the surface of the heated object that is the shortest distance from the infrared radiation element 1. There was a problem that it was not possible to irradiate with uniform heating.

また塗料の乾燥焼付、食品の保温、暖房などで
は4〜50μの長波長赤外線が被加熱物に効果的に
吸収されて最適であるが4〜50μの赤外線を放射
するためには赤外線放射素子1の表面温度を約
500℃以下に設定する必要がある。ところが上記
形状、構造の赤外線放射素子1において表面温度
を500℃以下に設定するためには外囲体7の外径
を大きくして表面積を大きくしなければならず、
その結果として発熱体9と金属外囲体7との間に
介在する絶縁層8の厚みが大きくなつて熱容量が
増し、赤外線放射素子1の通電初期の温度上昇速
度が遅くなり、特に断続使用する赤外線放射装置
としては適さないという問題もあつた。
In addition, long-wavelength infrared rays of 4 to 50 microns are most suitable for drying and baking paint, keeping food warm, heating, etc. as they are effectively absorbed by the heated object, but in order to emit infrared rays of 4 to 50 microns, an infrared radiation element 1 is required. The surface temperature of approximately
It is necessary to set the temperature below 500℃. However, in order to set the surface temperature to 500° C. or less in the infrared radiation element 1 having the above shape and structure, the outer diameter of the outer envelope 7 must be increased to increase the surface area.
As a result, the thickness of the insulating layer 8 interposed between the heating element 9 and the metal envelope 7 increases, the heat capacity increases, and the temperature rise rate of the infrared radiation element 1 at the initial stage of energization becomes slower, especially when used intermittently. Another problem was that it was not suitable as an infrared radiating device.

本考案は赤外線放射素子の形状、および反射体
への配置構成に改良を加えることで上記問題の解
決をはかつたものである。
The present invention attempts to solve the above problems by improving the shape of the infrared radiating element and its arrangement on the reflector.

以下図に従つて本考案の実施例について説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

図において1は赤外線放射素子で、この放射素
子1は薄形の長尺板状に形成されている。そして
この赤外線放射素子1はステンレス、Ni,Ni−
Crなどの箔を一定パターンにエツチング加工し
て形成した発熱体2の両表面にマイカ、アスベス
トあるいはリン酸アルミのバインダーで結着した
マグネシアにより絶縁層3,4を形成し、この表
面に金属セラミツクと耐熱塗料あるいは水ガラス
バインダーとの混合物を塗布して放射層5を形成
したものである。
In the figure, reference numeral 1 denotes an infrared radiation element, and this radiation element 1 is formed into a thin elongated plate shape. This infrared radiation element 1 is made of stainless steel, Ni, Ni-
Insulating layers 3 and 4 are formed of magnesia bound with a binder of mica, asbestos, or aluminum phosphate on both surfaces of the heating element 2, which is formed by etching a foil such as Cr into a certain pattern. The emissive layer 5 is formed by applying a mixture of and a heat-resistant paint or a water glass binder.

そしてこのよいな赤外線放射素子1は第2図に
示す如く複数の折曲面例えば断面>形をなす反射
体6の反射面より一定の間隙だけ離し、かつその
照明開口面aの長尺方向の略中心b上に位置させ
るとともに、その照射開口面9に対して幅の広い
放射面がほぼ垂直となるよう配設されている。
As shown in FIG. 2, this good infrared radiating element 1 has a plurality of bent surfaces, for example, separated from the reflecting surface of the reflector 6 having a cross-section shape by a certain distance, and approximately in the longitudinal direction of the illumination aperture surface a. It is located on the center b, and is arranged so that its wide radiation surface is substantially perpendicular to the radiation aperture surface 9.

本考案は上記の通り、赤外線放射素子1として
薄形の長尺板状のものを用い、しかもその赤外線
放射素子1を反射体6の照射開口面に対して赤外
線放射素子1の幅の広い放射面がほぼ垂直となる
よう配置したものであることから、この放射装置
においては赤外線放射素子1の放射層5から放射
された赤外線は直接被加熱物へ照射されることな
く、ほとんど反射体6で反射されて被加熱物に照
射されるため、被加熱物に対して均一な赤外線照
射が可能となる。
As described above, the present invention uses a thin elongated plate-like infrared radiating element 1, and furthermore, the infrared ray radiating element 1 is radiated with a wide width toward the irradiation aperture surface of the reflector 6. Since the planes are arranged almost vertically, in this radiating device, the infrared rays emitted from the radiation layer 5 of the infrared radiating element 1 are not directly irradiated onto the object to be heated, and most of the infrared rays are emitted by the reflector 6. Since the infrared rays are reflected and irradiated onto the heated object, it becomes possible to uniformly irradiate the heated object with infrared rays.

第3図は本考案の赤外線放射装置と従来の赤外
線放射装置による被加熱物に対する赤外線照射に
よる温度分布特性を示したもので、この図におい
て実線イは本考案装置によるもの、破線ロは従来
装置による特性を示している。この図かなも明ら
かな通り、本考案装置は被加熱物に対し均一な赤
外線照射が行ない得る。
Figure 3 shows the temperature distribution characteristics of infrared rays irradiated onto a heated object by the infrared ray radiating device of the present invention and the conventional infrared radiating device; in this figure, the solid line A is for the device of the present invention, and the broken line B is for the conventional device It shows the characteristics according to As is clear from this figure, the device of the present invention can uniformly irradiate the object to be heated with infrared rays.

また本考案の赤外線放射素子1は薄形の長尺板
状のものであることから、表面温度を500℃以下
にするためその表面積を大きくするには赤外線放
射素子1の幅広面をさらに大きくすれば可能であ
り、このようにすれば絶縁層4が厚くなることも
なくなり、通電初期における温度上昇速度が遅く
なることもなく、断続使用する赤外線放射装置と
しても適する。
Furthermore, since the infrared radiation element 1 of the present invention is in the form of a thin long plate, in order to increase the surface area in order to keep the surface temperature below 500°C, the wide side of the infrared radiation element 1 must be further enlarged. In this way, the insulating layer 4 will not become thick, and the rate of temperature rise at the initial stage of energization will not be slowed down, making it suitable as an infrared radiating device for intermittent use.

以上述べたように本考案赤外線放射装置によれ
ば被加熱物の均一加熱が可能で、しかも通電初期
における速熱性にすぐれ断続使用を行なう装置と
しても適し、さらには反射体の形状は必ずしも湾
曲とすることなく簡単な>形のもので良いことか
らその製作も簡単である等極めて工業的価値の大
きな赤外線放射装置が得られる。
As described above, the infrared radiation device of the present invention is capable of uniformly heating the object to be heated, has excellent rapid heating properties in the initial stage of energization, and is suitable as a device for intermittent use.Furthermore, the shape of the reflector is not necessarily curved. An infrared ray emitting device of extremely great industrial value can be obtained because it is easy to manufacture and can be manufactured in a simple shape.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の赤外線放射素子の一部を切欠
いて示す正面図、第2図はその放射素子を用いた
本考案の赤外線放射装置の断面図、第3図は本考
案装置と従来装置の被加熱物に対する赤外線照射
による温度分布特性図、第4図は従来の赤外線放
射装置の断面図である。 1……赤外線放射素子、6……反射体。
Fig. 1 is a partially cutaway front view of the infrared radiating element of the present invention, Fig. 2 is a sectional view of the infrared ray emitting device of the present invention using the radiating element, and Fig. 3 is the inventive device and the conventional device. FIG. 4 is a temperature distribution characteristic diagram of an object to be heated by infrared irradiation, and FIG. 4 is a cross-sectional view of a conventional infrared radiating device. 1...Infrared radiation element, 6...Reflector.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 長尺板状に形成してなる赤外線放射素子1と、
この赤外線放射素子1の周囲に配設した湾曲面又
は複数の折曲面を有する反射体6からなるものに
おいて、前記赤外線放射素子1を反射体6の反射
面より所定の間隔だけ離し、かつ反射体6の照射
開口面aの長尺方向の略中心b上に位置させると
ともに、幅の広い放射面を前記照射面aに対しほ
ぼ垂直となるよう配設してなる赤外線放射装置。
an infrared radiation element 1 formed into a long plate shape;
In a reflector 6 having a curved surface or a plurality of bent surfaces disposed around the infrared ray emitting element 1, the infrared ray emitting element 1 is separated from the reflecting surface of the reflector 6 by a predetermined distance, and the reflector The infrared radiation device is located approximately on the center b in the longitudinal direction of the irradiation aperture surface a of No. 6, and has a wide radiation surface disposed substantially perpendicular to the irradiation surface a.
JP7051079U 1979-05-25 1979-05-25 Expired JPS6129180Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7051079U JPS6129180Y2 (en) 1979-05-25 1979-05-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7051079U JPS6129180Y2 (en) 1979-05-25 1979-05-25

Publications (2)

Publication Number Publication Date
JPS55170780U JPS55170780U (en) 1980-12-08
JPS6129180Y2 true JPS6129180Y2 (en) 1986-08-28

Family

ID=29304249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7051079U Expired JPS6129180Y2 (en) 1979-05-25 1979-05-25

Country Status (1)

Country Link
JP (1) JPS6129180Y2 (en)

Also Published As

Publication number Publication date
JPS55170780U (en) 1980-12-08

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