JPS61288396A - Thin film display unit - Google Patents

Thin film display unit

Info

Publication number
JPS61288396A
JPS61288396A JP60129891A JP12989185A JPS61288396A JP S61288396 A JPS61288396 A JP S61288396A JP 60129891 A JP60129891 A JP 60129891A JP 12989185 A JP12989185 A JP 12989185A JP S61288396 A JPS61288396 A JP S61288396A
Authority
JP
Japan
Prior art keywords
thin film
wiring
film display
display device
dielectric breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60129891A
Other languages
Japanese (ja)
Inventor
千葉 正生
美樹夫 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Marelli Corp
Original Assignee
Nissan Motor Co Ltd
Kanto Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd, Kanto Seiki Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP60129891A priority Critical patent/JPS61288396A/en
Publication of JPS61288396A publication Critical patent/JPS61288396A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は所望パターンの電極に電圧を印加することによ
り文字や図形を表示するようにした電子時計の時刻表示
や自動車のスピード表示などに適した薄膜表示装置に関
する。
[Detailed Description of the Invention] (Industrial Application Field) The present invention is suitable for displaying the time of an electronic watch, the speed display of a car, etc., which display characters and figures by applying voltage to electrodes in a desired pattern. The present invention relates to a thin film display device.

(従来技術) 最近薄膜EL素子や液晶などが表示装置に用いられる傾
向にあり、第4図に従来の薄膜EL素子の断面構造を示
している。第4図において基板ガラス1の上に錫添加酸
化インジウムなどから成る透明電極2、Y2O3などか
ら成る絶縁膜3、Z Sに0.5重量%程度のM、など
を添加して成る発光膜4、Y2O3などから成る絶縁膜
5、A!Jなどから成る背面電極6が電子ビーム蒸着法
やスパッタリング法により順次積層されている。
(Prior Art) Recently, thin film EL elements, liquid crystals, and the like have been used in display devices, and FIG. 4 shows a cross-sectional structure of a conventional thin film EL element. In FIG. 4, a transparent electrode 2 made of tin-doped indium oxide or the like, an insulating film 3 made of Y2O3 or the like, and a light-emitting film 4 made of ZS doped with about 0.5% by weight of M, etc. are disposed on a substrate glass 1. , Y2O3, etc., insulating film 5, A! A back electrode 6 made of J or the like is sequentially laminated by electron beam evaporation or sputtering.

透明電極2と背面電極6との間に交流電圧を印加するこ
とにより透明電極2と背面電極6とで挟まれた部分の発
光膜4が発光する。従って透明電極2または背面電極6
の形状を任意のパターンとすることで文字や図形を表示
できる。−例としていわゆる7セグメント数字表示装置
の透明電極2のパターンを第5図に示す。この第5図に
示すように、透明電極2は金属電極に比較してシート抵
抗が高いので、配線抵抗による電圧降下を極力抑える目
的で可能な限り配線パターンの幅を広くとることが行わ
れている。
By applying an AC voltage between the transparent electrode 2 and the back electrode 6, the portion of the light emitting film 4 sandwiched between the transparent electrode 2 and the back electrode 6 emits light. Therefore, the transparent electrode 2 or the back electrode 6
Characters and figures can be displayed by making the shape into any pattern. - As an example, the pattern of the transparent electrode 2 of a so-called 7-segment numeric display is shown in FIG. As shown in FIG. 5, since the transparent electrode 2 has a higher sheet resistance than a metal electrode, the width of the wiring pattern is made as wide as possible in order to minimize the voltage drop due to wiring resistance. There is.

また、同じく透明電極を有する液晶表示素子を用いた表
示装置として特開昭53−20794には第6図および
第7図に示すものが開示されている。これらは液晶の応
答速度やコンミルラストなどの特性を各素子の間で均一
にすることを考慮したもので、第6図に示す装置では、
各素子7への配線2の長さの相違に対して配線巾を変え
ることにより、また第7図に示す装置では配線2の長手
方向に膜厚を変えることにより配線抵抗の値を均一にす
ることが行われている。この第6図および第7図に示す
装置のいずれにおいても配線抵抗による電圧降下を極力
抑える目的については先の第5図に示す例と変わるとこ
ろがない。
Furthermore, as a display device using a liquid crystal display element having a transparent electrode, Japanese Patent Laid-Open No. 53-20794 discloses a display device shown in FIGS. 6 and 7. These are designed to make the characteristics such as the response speed and commull last of the liquid crystal uniform among each element, and in the device shown in Fig. 6,
By changing the wiring width in response to the difference in the length of the wiring 2 to each element 7, and in the device shown in FIG. 7, by changing the film thickness in the longitudinal direction of the wiring 2, the value of the wiring resistance can be made uniform. things are being done. Both of the devices shown in FIGS. 6 and 7 are the same as the example shown in FIG. 5 above in terms of the purpose of minimizing the voltage drop due to wiring resistance.

(発明が解決しようとする問題点) 薄膜表示素子を構成する薄膜は電子ビーム蒸着法や高周
波スパッタリング法などにより形成され、その膜厚は0
.2〜0.6μm程度と非常に薄く、しかも薄膜にはピ
ンホールや異物の混入などによる欠陥が含まれ、これら
を皆無にすることは不可能に近い。絶縁膜に欠陥がある
と絶縁膜には106v/m程度の強い電界がかかるので
欠陥に起因して微小な絶縁破壊が生ずる。上述した従来
の薄膜表示素子では電圧降下を抑える目的で配線抵抗が
小さくなるように工夫されているので電源からの電流供
給が持続して絶縁破壊の領域が次第に拡大し、ついには
セグメント全面の絶縁破壊に至り表示素子としての機能
を果せなくなるという問題がおる。
(Problems to be Solved by the Invention) The thin film constituting the thin film display element is formed by an electron beam evaporation method, a high frequency sputtering method, etc., and the film thickness is 0.
.. It is very thin, about 2 to 0.6 μm, and the thin film contains defects such as pinholes and foreign matter, and it is almost impossible to completely eliminate these defects. If there is a defect in the insulating film, a strong electric field of about 106 V/m will be applied to the insulating film, resulting in minute dielectric breakdown due to the defect. In the conventional thin film display elements mentioned above, the wiring resistance is reduced in order to suppress the voltage drop, so the current supply from the power supply continues, and the area of dielectric breakdown gradually expands, until the entire segment is insulated. There is a problem in that the display element is destroyed and cannot function as a display element.

(発明の目的および構成) 本発明は上記の点にかんがみてなされたもので、薄膜表
示素子の薄膜絶縁破壊の拡大防止を目的とし、この目的
を達成するために、薄膜表示素子の電極と同一面上に形
成さた給電端子部から該電極までの配線中に抵抗値が1
KΩから5KΩの範囲内の抵抗部を設けて絶縁破壊時に
流れる電流を制御するように構成した。
(Objects and Structure of the Invention) The present invention has been made in view of the above points, and has the purpose of preventing the spread of thin film dielectric breakdown of thin film display elements. If the resistance value is 1 in the wiring from the power supply terminal formed on the surface to the electrode,
A resistive portion within the range of KΩ to 5KΩ was provided to control the current flowing at the time of dielectric breakdown.

(実施例) 以下本発明を図面に基づいて説明する。(Example) The present invention will be explained below based on the drawings.

第1図は本発明による薄膜表示装置の一実施例の平面図
であるが、第1図の説明に先立って本発明に至るまでの
実験の段階で判明した3つの事実について説明する。
FIG. 1 is a plan view of one embodiment of a thin film display device according to the present invention. Prior to explaining FIG. 1, three facts discovered during the experimental stage leading up to the present invention will be explained.

第1は、薄膜の欠陥を核とする絶縁破壊はまず透明電極
と背面電極との間に蓄積された電荷と電源から供給され
る電流によるエネルギーによって始まり、破壊部の拡大
は電源から供給される電流のエネルギーによるという事
実である。従って、絶縁破壊時に電源から供給される電
流を制限すれば絶縁破壊部が拡大するのを防止できるこ
とがわかる。
First, dielectric breakdown caused by a defect in the thin film begins with the energy generated by the charge accumulated between the transparent electrode and the back electrode and the current supplied from the power supply, and the expansion of the breakdown area is caused by the energy supplied from the power supply. The fact is that it depends on the energy of the current. Therefore, it can be seen that by limiting the current supplied from the power supply at the time of dielectric breakdown, it is possible to prevent the dielectric breakdown portion from expanding.

第2に、50−程度の面積の薄膜の連鎖的な絶縁破壊は
1KΩ〜5KΩ程度の配線抵抗を入れることにより防止
できることである。
Second, chain dielectric breakdown of a thin film with an area of about 50 - can be prevented by introducing a wiring resistance of about 1KΩ to 5KΩ.

第3に、絶縁破壊時に電流制限が行われた場合、薄膜の
欠陥に起因する絶縁破壊が宝じても0.1mφ程度以下
の破壊に止めることができ、表示には支障のない程度に
抑えることができることである。
Thirdly, if current is limited at the time of dielectric breakdown, even if dielectric breakdown occurs due to a defect in the thin film, the breakdown can be limited to about 0.1 mφ or less, and it can be suppressed to a level that does not affect the display. This is something that can be done.

第3図はこれらの事実の関係を示すものであり、配線抵
抗を変えたときの絶縁破壊部の直径および駆動電圧上昇
分を示している。配線抵抗を1KΩ以上にすると急激に
絶縁破壊部の径が小さくなることがわかる。配線抵抗の
抵抗値を大きくするほどこの効果は大きくなるが、駆動
電圧の上昇が大きくなること、また配線部の発熱が大き
くなることから約5KΩに制限される。配線抵抗が1K
Ω〜5KΩ程度でおれば駆動電圧の上昇は10数V程度
で必って許容し得る範囲であり、発熱の問題も生じない
FIG. 3 shows the relationship between these facts, and shows the diameter of the dielectric breakdown portion and the increase in driving voltage when the wiring resistance is changed. It can be seen that when the wiring resistance is increased to 1KΩ or more, the diameter of the dielectric breakdown portion decreases rapidly. This effect increases as the resistance value of the wiring resistance increases, but it is limited to about 5KΩ because the increase in drive voltage and the heat generation in the wiring section increase. Wiring resistance is 1K
If it is about Ω to 5KΩ, the increase in drive voltage will be within an allowable range of about 10-odd volts, and the problem of heat generation will not occur.

このような結果に基づいて本発明による薄膜表示装置は
第1図に示すように構成されている。第1図は7セグメ
ント数字表示装置に本発明を適用した実施例を示してお
り、基板ガラス1の上に透明電極2が積層され、この透
明電極2はa−Ωの7つのセグメントに分割されている
。各セグメン1〜a−gの中での輝度のバラツキ、すな
わち電圧供給点(たとえば15a〉に近い部分と離れた
部分どの輝度差を少なくするために、透明電極2のシー
1〜抵抗は極力低い方が望ましい(たとえば10Ω/口
程度)。各セグメントa〜qと給電端子部138〜13
CIとを結ぶ配線14. a〜14Clは14g、14
b、14c、14e、14f。
Based on these results, a thin film display device according to the present invention is constructed as shown in FIG. FIG. 1 shows an embodiment in which the present invention is applied to a 7-segment numeric display device, in which a transparent electrode 2 is laminated on a substrate glass 1, and this transparent electrode 2 is divided into seven segments of a-Ω. ing. In order to reduce the variation in brightness within each segment 1 to a-g, that is, the difference in brightness between the part near the voltage supply point (for example 15a) and the part far away, the resistance of the transparent electrode 2 is as low as possible. It is more desirable (for example, about 10 Ω/port).
Wiring connecting to CI 14. a~14Cl is 14g, 14
b, 14c, 14e, 14f.

14a、14.dの順に次第に短くなる。そこで配線1
4a〜14C]の抵抗値を1KΩ〜2にΩに揃えるため
に配線14a〜14CIの巾をその長さに比例して太く
しである。最も細い配線14aおよび14dで線巾は0
.1#程度となっている。
14a, 14. It becomes gradually shorter in the order of d. So wiring 1
4a to 14C], the widths of the wirings 14a to 14CI are made thicker in proportion to their lengths in order to make the resistance values of the wirings 14a to 14C equal to 1KΩ to 2Ω. The thinnest wiring 14a and 14d have a line width of 0.
.. It is about 1#.

第2図は本発明による薄膜表示装置の他の実施例を示し
ている。図中第1図と同じ構成部分には同じ参照番号を
付して示しである。この実施例においては配線148〜
14gの途中に抵抗値としてメアンダ型抵抗168〜1
6gが設けられ、それぞれの配線14a〜14gとメア
ンダ型抵抗16a〜16gの合成抵抗が1〜2にΩとな
るようにしである。第1図の実施例では給電端子部13
a〜13C]とセグメントa〜Ωとの距離が短いときは
配線148〜149の巾を細くする必要があり、エツチ
ング時に断線が生ずるおそれがあるので、この実施例で
は極端に配線148〜14Qか細くなるのを防止するた
めにメアンダ型抵抗16a〜16gを用い配線の線巾は
どこも同じとした。この実施例の作用効果は第1図の実
施例と同じであるので説明は省略する。
FIG. 2 shows another embodiment of the thin film display device according to the present invention. Components in the figure that are the same as those in FIG. 1 are designated by the same reference numerals. In this embodiment, the wiring 148~
A meander type resistor of 168 to 1 is used as a resistance value in the middle of 14g.
6g is provided so that the combined resistance of the respective wirings 14a to 14g and the meandering resistors 16a to 16g is 1 to 2Ω. In the embodiment shown in FIG.
a to 13C] and segments a to Ω is short, it is necessary to make the width of the wirings 148 to 149 thin, and there is a risk of disconnection during etching. Therefore, in this embodiment, the wirings 148 to 14Q are made extremely thin. In order to prevent this, meander type resistors 16a to 16g were used, and the line width of the wiring was made to be the same everywhere. The functions and effects of this embodiment are the same as those of the embodiment shown in FIG. 1, so the explanation will be omitted.

(発明の効果) 以上説明したように、本発明は薄膜表示素子の電極と該
電極への給電端子部との間に抵抗部を設けて絶縁破壊時
に流れる電流を制限するように構成したので、薄膜表示
素子の絶縁破壊が拡大するのを防止することができる。
(Effects of the Invention) As explained above, the present invention is configured such that a resistive portion is provided between the electrode of the thin film display element and the power supply terminal portion to the electrode to limit the current flowing at the time of dielectric breakdown. It is possible to prevent dielectric breakdown of the thin film display element from expanding.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による薄膜表示装置の一実施例を示す平
面図、第2図は本発明による薄膜表示装置の他の実施例
を示す平面図、第3図は本発明に到る実験結果を示す特
性図、第4図は従来の薄膜表示素子の断面構造図、第5
図ないし第7図は従来の薄膜表示素子の平面図である。 1・・・基板ガラス、2・・−透明電極、13a〜13
Ω・・・給電端子部、148〜14g・・・配線、15
a・・・電圧供給点、16a〜16g・・・メアンダ型
抵抗第3図 第4図 第5図 第6図 第7図
FIG. 1 is a plan view showing one embodiment of the thin film display device according to the present invention, FIG. 2 is a plan view showing another embodiment of the thin film display device according to the present invention, and FIG. 3 is the experimental result leading to the present invention. Figure 4 is a cross-sectional structural diagram of a conventional thin film display element.
7 to 7 are plan views of conventional thin film display elements. 1...Substrate glass, 2...-Transparent electrode, 13a-13
Ω...Power supply terminal section, 148~14g...Wiring, 15
a... Voltage supply point, 16a to 16g... Meander type resistor Figure 3 Figure 4 Figure 5 Figure 6 Figure 7

Claims (1)

【特許請求の範囲】[Claims]  少なくとも一方が透明な一対の電極間に発光膜と絶縁
膜とを挟持して成り、前記一対の電極間に電圧を印加す
ることにより電極間の発光膜を発光させる薄膜表示装置
において、前記電極と同一面上に形成された給電端子部
から該電極までの配線中に抵抗値が1KΩから5KΩの
範囲内の抵抗部を設けたことを特徴とする薄膜表示装置
A thin film display device comprising a light-emitting film and an insulating film sandwiched between a pair of electrodes, at least one of which is transparent, and in which the light-emitting film between the electrodes emits light by applying a voltage between the pair of electrodes. A thin film display device characterized in that a resistance portion having a resistance value within a range of 1KΩ to 5KΩ is provided in wiring from a power supply terminal portion formed on the same surface to the electrode.
JP60129891A 1985-06-17 1985-06-17 Thin film display unit Pending JPS61288396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60129891A JPS61288396A (en) 1985-06-17 1985-06-17 Thin film display unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60129891A JPS61288396A (en) 1985-06-17 1985-06-17 Thin film display unit

Publications (1)

Publication Number Publication Date
JPS61288396A true JPS61288396A (en) 1986-12-18

Family

ID=15020909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60129891A Pending JPS61288396A (en) 1985-06-17 1985-06-17 Thin film display unit

Country Status (1)

Country Link
JP (1) JPS61288396A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117683U (en) * 1988-01-30 1989-08-09
EP0432835B1 (en) * 1989-12-15 1994-03-02 Unilever N.V. Fluid composition
WO2002023955A1 (en) * 2000-09-14 2002-03-21 Nippon Seiki Co.,Ltd Organic el element
JP2005099414A (en) * 2003-09-25 2005-04-14 Chi Mei Electronics Corp Image display device and integrated circuit
JP2009258330A (en) * 2008-04-16 2009-11-05 Sony Corp Display apparatus
JP2011100593A (en) * 2009-11-05 2011-05-19 Nippon Seiki Co Ltd Organic el panel

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117683U (en) * 1988-01-30 1989-08-09
EP0432835B1 (en) * 1989-12-15 1994-03-02 Unilever N.V. Fluid composition
WO2002023955A1 (en) * 2000-09-14 2002-03-21 Nippon Seiki Co.,Ltd Organic el element
US6975066B2 (en) 2000-09-14 2005-12-13 Nippon Seiki Co., Ltd. Organic EL element
JP2005099414A (en) * 2003-09-25 2005-04-14 Chi Mei Electronics Corp Image display device and integrated circuit
JP2009258330A (en) * 2008-04-16 2009-11-05 Sony Corp Display apparatus
JP2011100593A (en) * 2009-11-05 2011-05-19 Nippon Seiki Co Ltd Organic el panel

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