JPS61285262A - Equal magnification image-pickup sensor - Google Patents

Equal magnification image-pickup sensor

Info

Publication number
JPS61285262A
JPS61285262A JP60127495A JP12749585A JPS61285262A JP S61285262 A JPS61285262 A JP S61285262A JP 60127495 A JP60127495 A JP 60127495A JP 12749585 A JP12749585 A JP 12749585A JP S61285262 A JPS61285262 A JP S61285262A
Authority
JP
Japan
Prior art keywords
formulas
tables
group
ring
mathematical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60127495A
Other languages
Japanese (ja)
Inventor
Setsu Rokutanzono
節 六反園
Hirota Sakon
洋太 左近
Mitsuru Seto
瀬戸 満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP60127495A priority Critical patent/JPS61285262A/en
Publication of JPS61285262A publication Critical patent/JPS61285262A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0622Heterocyclic compounds
    • G03G5/0624Heterocyclic compounds containing one hetero ring
    • G03G5/0627Heterocyclic compounds containing one hetero ring being five-membered
    • G03G5/0629Heterocyclic compounds containing one hetero ring being five-membered containing one hetero atom
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0664Dyes
    • G03G5/0675Azo dyes
    • G03G5/0679Disazo dyes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/06Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
    • G03G5/0664Dyes
    • G03G5/0675Azo dyes
    • G03G5/0679Disazo dyes
    • G03G5/0683Disazo dyes containing polymethine or anthraquinone groups

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide the titled equal magnification sensor having high response speed, excellent photocurrent/dark current characteristics and long length, by placing individual electrodes, a common electrode and a photo-conductive material containing a specific hydrazone compound and a specific azo dye as active components on an insulating substrate. CONSTITUTION:The objective equal magnification sensor can be produced by attaching individual electrodes and a common electrode to the surface of an insulating substrate (e.g. glass plate) and covering the insulating substrate with a photo-conductive material containing a hydrazone compound of formula I (R1 is methyl, ethyl, etc.; R2 is methyl, ethyl, phenyl, etc.; R3 is H, Cl, Br, 1-4C alkyl, etc.) and one or more azo dyes of formula II [A is group of formula III (Ar2 is benzene ring, naphthalene ring, etc.), etc.], formula IV, formula V (Ar is phenyl, pyridyl, etc.), formula VI (X is benzene ring, indole ring, etc.), formula VII, etc., as main components by dipping method, etc.

Description

【発明の詳細な説明】 蓋生分互 本発明は光電変換素子(等倍センサー)に関するもので
あり、さらに詳しくはアゾ系顔料及びヒドラゾン化合物
を主成分とした光導電膜を備えた光電変換素子を有する
画像読取等倍センサーに関するものである。
[Detailed Description of the Invention] The present invention relates to a photoelectric conversion element (same-magnification sensor), and more specifically to a photoelectric conversion element equipped with a photoconductive film containing an azo pigment and a hydrazone compound as main components. The present invention relates to an image reading equal-magnification sensor having the following features.

皿米五権 従来技術としてはCdS、アモルファス−5iを用いた
光電変換素子として特開昭59−54373(電々公社
)、特開昭59−112651 (富士通)、特開昭5
9−110177(東芝)等が有り、P−C−3Lを使
用した光電変換素子としては特開昭58−118161
(キャノン)が上げられる。又「日経エレクトロニクス
J (1982年4月26日)では上記CdS、アモル
ファス−3iの他にCd5a、5e−As−Te等を用
いた光電変換素子を紹介している。しかしながらこれ等
はいずれも成膜方法の点で制約を受ける為長尺(メート
ルサイズ)の等倍センサーとしての利用には不適当であ
る。
Conventional technologies include CdS, photoelectric conversion elements using amorphous-5i, JP-A No. 59-54373 (Electronic Corporation), JP-A No. 59-112651 (Fujitsu), and JP-A No. 59-Sho.
9-110177 (Toshiba), etc., and a photoelectric conversion element using P-C-3L is JP-A-58-118161.
(Cannon) is raised. In addition, "Nikkei Electronics J (April 26, 1982) introduces photoelectric conversion elements using Cd5a, 5e-As-Te, etc. in addition to the above-mentioned CdS and amorphous-3i. However, none of these have been successfully developed. Due to the limitations of the membrane method, it is unsuitable for use as a long (meter-sized) full-scale sensor.

長尺等倍センサーに有利な光電変換素子材料として我々
はアゾ顔料/結着樹脂分散系の光電変換素子を検討して
来た(特許出願済)。しかしながらこの系ではキャリア
ーの移動度に難点が有り、所望する応答速度は得られな
かった。
We have been investigating a photoelectric conversion element with an azo pigment/binder resin dispersion system as an advantageous photoelectric conversion element material for long, same-size sensors (patent applied for). However, this system had a problem with carrier mobility, and the desired response speed could not be obtained.

本発明は上記分散系光電変換素子応答速度の改善を計っ
たものである。
The present invention aims to improve the response speed of the above-mentioned dispersion type photoelectric conversion element.

■−−奴 本発明は従来の欠点を克服したアゾ顔料及びヒドラゾン
化合物を主成分とした光導電膜を備えた光電変換素子を
有する画像読取等倍センサーを提供することを目的とす
る。
(2) An object of the present invention is to provide an image reading 1-magnification sensor having a photoelectric conversion element having a photoconductive film mainly composed of an azo pigment and a hydrazone compound, which overcomes the drawbacks of the conventional sensor.

盈−一里 本発明者は前記目的を達成するために鋭意研究した結果
、 絶縁性基体上に個別電極、共通電極及び光導電体を設置
して成る画像読取等倍センサーに於いて、前記光導電体
が下記一般式 〔式中、 R1はメチル基、エチル基、2−ヒドロキシ
エチル基、又は2−クロルエチル基を表わし、 R2は
メチル基、エチル基、ベンジル基又はフェニル基を表わ
し、 R1は水素。
As a result of intensive research to achieve the above object, the present inventors have developed an image reading 1x image sensor comprising individual electrodes, a common electrode, and a photoconductor disposed on an insulating substrate. The conductor has the following general formula [wherein R1 represents a methyl group, ethyl group, 2-hydroxyethyl group, or 2-chloroethyl group, R2 represents a methyl group, ethyl group, benzyl group, or phenyl group, and R1 represents hydrogen.

塩素、臭素、炭素数1〜4のアルキル基、炭素数1〜4
のアルコキシ基、ジアルキルアミノ基又はニトロ基を表
わす〕 で表わされるヒドラゾン化合物の少なくとも1つと、F
記一般式 %式%) 〔但し、前記一般式が(1)〜(10)において、ここ
で又はベンゼン環、ナフタレン環などの芳香族もしくは
、インドール環、カルバゾール環。
Chlorine, bromine, alkyl group having 1 to 4 carbon atoms, 1 to 4 carbon atoms
represents an alkoxy group, dialkylamino group or nitro group];
[However, in the general formulas (1) to (10), the above general formula is an aromatic ring such as a benzene ring or a naphthalene ring, an indole ring, or a carbazole ring.

ベンジフラン環なとのへテロ環または、それらの置換体
を表わし、Ar工はベンゼン環、ナフタレン環などの芳
香族、もしくは、ジベンゾフラン環などのへテロ環また
はそれらの置換体を表わし、Ar2はベンゼン環、ナフ
タレン環などの芳香族またはそれらの置換体を表わし、
R工は水素、低級アルキル基、フェニル基またはその置
換体を表わし、 またR2は低級アルキル基、フェニル
基、カルボキシル基または、そのエステルを表わす〕 幸 N=N−A 〔但し、前記一般式(11)〜(24)において。
represents a hetero ring such as a benzofuran ring or a substituted product thereof; Ar represents an aromatic ring such as a benzene ring or a naphthalene ring; or a hetero ring such as a dibenzofuran ring; or a substituted product thereof; Ar2 represents a benzene ring or a substituted product thereof; Represents an aromatic ring, naphthalene ring, etc. or a substituted product thereof,
R represents hydrogen, a lower alkyl group, a phenyl group, or a substituent thereof, and R2 represents a lower alkyl group, a phenyl group, a carboxyl group, or an ester thereof.] In 11) to (24).

ここで又はベンゼン環、ナフタレン環などの芳香族、イ
ンドール環、カルバゾール環、ベンジフラン環などのへ
テロ環または、それらの置換体、Ar工はベンゼン環、
ナフタレン環などの芳香族、ジベンゾフラン環などのへ
テロ環または。
Here, aromatic rings such as benzene rings and naphthalene rings, hetero rings such as indole rings, carbazole rings, and benzifuran rings, or substituted products thereof, and Ar are benzene rings,
Aromatic rings such as naphthalene rings, heterocyclic rings such as dibenzofuran rings, or

それらの置換体、Ar、およびAr3は、ベンゼン環、
ナフタレン環などの芳香族またはそれらの置換体、R1
およびR3は水素、低級アルキル基、フェニル基または
その置換体、 R2は低級アルキル基、カルボキシル基
またはそのエステルを表わす〕 us 〔但し、前記一般式(25)〜(27)において、式中
Arは置換又は、非置換のフェニル基、 置換又は非置
換のナフチル基、アントリル基、ピレニル基、ピリジル
基、チェニル基、フリル基及びカルバゾリル基を表わす
〕 −に 〔但し、前記一般式(28)〜(29)において、又は
ベンゼン環、ナフタレン環などの芳香族、インドール環
、カルバゾール環、ベンジフラン環などのへテロ環又は
、それらの置換体、R1は、 ベンゼン環、ナフタレン
環などの芳香環、ジベンゾフラン環カルバゾール環など
のへテロ環又はそれらの置換体、R2は水素、低級アル
キル基、フェニル基又はその置換体を表わす〕 〔但し、前記一般式(30〜31)において、Xは置換
もしくは無置換の芳香環、または、ペテロ環を表わし、
Arは置換もしくは無置換の芳香環または、ペテロ環を
表わす〕 で表わされるアゾ顔料の少なくとも1つを有効成分とし
て含有する事を特徴とする画像読取等倍センサーを提供
することによって前記目的が達成できることを見出した
Those substituents, Ar, and Ar3 are benzene rings,
Aromatics such as naphthalene rings or substituted products thereof, R1
and R3 represents hydrogen, a lower alkyl group, a phenyl group, or a substituted product thereof; R2 represents a lower alkyl group, a carboxyl group, or an ester thereof] [However, in the general formulas (25) to (27), Ar in the formula represents a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, anthryl group, pyrenyl group, pyridyl group, chenyl group, furyl group, or carbazolyl group] 29), or an aromatic ring such as a benzene ring or a naphthalene ring, a hetero ring such as an indole ring, a carbazole ring, or a benzifuran ring, or a substituted product thereof, R1 is an aromatic ring such as a benzene ring or a naphthalene ring, or a dibenzofuran ring A heterocycle such as a carbazole ring or a substituted product thereof; R2 represents hydrogen, a lower alkyl group, a phenyl group, or a substituted product thereof] [However, in the general formulas (30 to 31), X is a substituted or unsubstituted Represents an aromatic ring or a petro ring,
Ar represents a substituted or unsubstituted aromatic ring or a petro ring.] The above object is achieved by providing an image reading 1-magnification sensor characterized by containing as an active ingredient at least one azo pigment represented by the following: I found out what I can do.

すなわち本発明は絶縁性基板上に個別電極、共通電極及
びアゾ顔料とヒドラゾン化合物を主成分とする光導電膜
を設ける事に依り構成される光電変換素子を備えた画像
読取用等倍センサーに関するものである。
That is, the present invention relates to a 1-size sensor for image reading equipped with a photoelectric conversion element formed by providing individual electrodes, a common electrode, and a photoconductive film containing an azo pigment and a hydrazone compound as main components on an insulating substrate. It is.

ます等倍センサーの全体構成例、回路構成例、光電変換
素子部構造例を第1図、第2−a図、第2−b図、第3
− a図及び第3−b図に示す。
Figures 1, 2-a, 2-b, and 3 show an example of the overall configuration, circuit configuration, and photoelectric conversion element structure of the same-size sensor.
- Shown in Figure a and Figure 3-b.

第1図は画像読取用等倍センサーの1構成例を示したも
のである。このイメージセンサ−は照明光源、導光系と
してロッドレンズアレイ、光電変換膜から成るフォトセ
ンサーアレイから構成されて居り、その他に読出し回路
、及び走査回路がセンサー駆動には必要となる。
FIG. 1 shows an example of the configuration of a 1-magnification sensor for image reading. This image sensor is composed of an illumination light source, a rod lens array as a light guiding system, and a photosensor array consisting of a photoelectric conversion film.In addition, a readout circuit and a scanning circuit are required to drive the sensor.

読出し方式にはリアルタイム方式と電荷蓄積方式の2方
式がある。
There are two readout methods: a real-time method and a charge accumulation method.

第2− a図にリアルタイム方式読出し回路の1例を図
示した。リアルタイム方式は各素子に直列にブロッキン
グダイオードを設け1個別電極を順次スイッチングして
各素子の抵抗変化を外部電流変化とし光電変換出力信号
として取り出す方式である。第2−b図は電荷蓄積方式
読出し回路の1例である。本方式は信号光でフォトダイ
オード内に蓄積された電荷を放電させ、蓄積時間(走査
時間)毎にフォトダイオードに流れ込む充電々流を検出
し光信号を電気信号に変換する方式である。
Figure 2-a shows an example of a real-time readout circuit. The real-time method is a method in which a blocking diode is provided in series with each element, and one individual electrode is sequentially switched, and the resistance change of each element is converted into an external current change and taken out as a photoelectric conversion output signal. FIG. 2-b shows an example of a charge accumulation type readout circuit. This method uses signal light to discharge the charges accumulated in the photodiode, detects the current of charge flowing into the photodiode at every accumulation time (scanning time), and converts the optical signal into an electrical signal.

第3−a図及び第3−b図に光電変換素子の構成を示し
た。素子構造は電極の配置によりプレーナー型(第3−
a図)、とサンドインチ型(第3−b図)に大別される
。サンドインチ型は感光層膜厚が電極間隔となる為電極
間隔を高精度且つ容易に制御出来る反面、透明電極が必
要であり又感光層のピンホールが致命傷となる欠点があ
る。
The structure of the photoelectric conversion element is shown in FIGS. 3-a and 3-b. The device structure is planar type (third-stage) due to the arrangement of electrodes.
It is roughly divided into the sandwich type (Figure 3-b) and the sandwich type (Figure 3-b). In the sandwich type, the thickness of the photosensitive layer corresponds to the electrode spacing, so the electrode spacing can be controlled easily and with high precision, but it requires transparent electrodes and has the disadvantage that pinholes in the photosensitive layer can be fatal.

処方プレーナー型はサンドイッチ型に比し耐ピンホール
特性に秀れ、電極を1回の工程で作成出来る反面、電極
間隔制御に難点が有る。
Although the prescription planar type has better pinhole resistance than the sandwich type and allows electrodes to be made in one process, it has a difficulty in controlling the electrode spacing.

次に本発明の主眼である光電変換部を構成する材料及び
処方に関して述べる。
Next, the materials and formulation constituting the photoelectric conversion section, which is the main focus of the present invention, will be described.

本発明に於ける絶縁基板としては例えば基板側から受光
する場合には透光性のセラミック。
The insulating substrate in the present invention is, for example, a translucent ceramic when receiving light from the substrate side.

ガラス、プラスチック又はこれ等を組み合せたものを用
いる。一方基板上に形成された感光層側から光照射する
場合は、非透光性の絶縁基板であっても良いし、又金属
等非絶縁性の基板上に絶縁処理された基板であっても良
い。
Use glass, plastic, or a combination of these. On the other hand, when irradiating light from the side of the photosensitive layer formed on the substrate, the substrate may be a non-light-transmitting insulating substrate, or it may be an insulating substrate on a non-insulating substrate such as a metal. good.

絶縁性基板上に設置されるセンサー駆動電極としては例
えばAl、Ti、V、Cr、Mn、Fe、Go、Ni%
Cu、Zn、Pb、Sn、Ag、Au。
Examples of sensor drive electrodes installed on an insulating substrate include Al, Ti, V, Cr, Mn, Fe, Go, and Ni%.
Cu, Zn, Pb, Sn, Ag, Au.

Mo、W等及びこれ等金属の合金及びこれ等金属及び合
金2種以上の多層膜であっても良い。
Mo, W, etc., alloys of these metals, and multilayer films of two or more of these metals and alloys may be used.

あるいは必要に応じてNESA、ITOlIn、02等
の透光性電極であっても良い。
Alternatively, a translucent electrode such as NESA, ITOlIn, 02, etc. may be used as required.

これ等の導電材料はスパッター法、蒸着法、又はCVD
法により成膜する事が可能であり、しかる後これ等金属
膜をフォトエツチング法により所望の形状を有する電極
を得る事が出来る。
These conductive materials can be produced by sputtering, vapor deposition, or CVD.
After that, these metal films can be photoetched to obtain an electrode having a desired shape.

又工業的に良く知られているマスク蒸着法、スクリーン
印刷法、リフトオフ法等により電極を形成する事も可能
である。
It is also possible to form the electrodes by a mask vapor deposition method, a screen printing method, a lift-off method, etc. which are well known in industry.

電極膜の膜厚は0.05μm〜5.0μm、好ましくは
1〜4μmである。
The thickness of the electrode film is 0.05 μm to 5.0 μm, preferably 1 to 4 μm.

個別電極と共通電極が基板上に平面的に設置されるいわ
ゆるプレーナー型(第3−a図)の場合絶縁基板上に電
極形成後光導電層を設置し等倍センサーは完成する。一
方基板上に上部電極、光導電層、下部電極と積層するい
わゆるサンドイッチ型(第3−b図)の場合下部電極を
形成し次に光導電層を形成した後、上部電極を前出の材
料及び方法で設置する。上部電極及び下部電極の材料は
同一である必要はなく、光導電層の特性を妨げないもの
が望ましい。
In the case of a so-called planar type sensor (FIG. 3-a) in which the individual electrodes and the common electrode are installed flatly on a substrate, a photoconductive layer is installed after electrodes are formed on an insulating substrate, and a full-size sensor is completed. On the other hand, in the case of a so-called sandwich type (Figure 3-b) in which an upper electrode, a photoconductive layer, and a lower electrode are laminated on a substrate, the lower electrode is formed, then the photoconductive layer is formed, and then the upper electrode is layered with the above-mentioned material. and method of installation. The materials of the upper and lower electrodes do not need to be the same, and are preferably materials that do not interfere with the properties of the photoconductive layer.

光導電膜は絶縁性樹脂及び特許請求範囲に記載された一
般式を有するアゾ顔料とヒドラゾン化合物を主成分とし
て構成される。絶縁性樹脂としては例えばエポキシ樹脂
、アクリル樹脂、ポリアミド樹脂、ポリイミド樹脂、ブ
チロール樹脂、ポリエステル樹脂、ポリカーボネート樹
脂等が挙げられ、光導電層の成膜性、電気特性等から選
択される。又これ等樹脂固有の特性を補う目的で2種以
上の絶縁性樹脂を用いる事も可能である。
The photoconductive film is mainly composed of an insulating resin, an azo pigment having the general formula described in the claims, and a hydrazone compound. Examples of insulating resins include epoxy resins, acrylic resins, polyamide resins, polyimide resins, butyrol resins, polyester resins, and polycarbonate resins, which are selected based on the film formability of the photoconductive layer, electrical properties, etc. It is also possible to use two or more types of insulating resins in order to compensate for the characteristics specific to these resins.

本発明に使用されるアゾ顔料及びヒドラゾン化合物と絶
縁性樹脂との混合重量比は下記の様である。
The mixing weight ratio of the azo pigment and hydrazone compound and the insulating resin used in the present invention is as follows.

アゾ顔料/絶縁性樹脂:173〜3/1ヒドラゾン化合
物/絶縁性樹脂:1/3〜1/1アゾ顔料、ヒドラゾン
化合物の絶縁性樹脂に対する混合比率が多過ぎると光導
電膜と電極及び絶縁性基板との接着性が低下し信頼性が
損われる。又少な過ぎると光導電率σPが小さくなりS
N比(σP/σd)を上げる事が出来ない。
Azo pigment/Insulating resin: 173-3/1 Hydrazone compound/Insulating resin: 1/3-1/1 If the mixing ratio of the azo pigment and hydrazone compound to the insulating resin is too high, the photoconductive film and electrode and insulation Adhesiveness to the substrate decreases and reliability is impaired. Also, if it is too small, the photoconductivity σP becomes small and S
It is not possible to increase the N ratio (σP/σd).

光導電膜の膜厚は一般的に0.1〜5μmで好ましくは
0.2〜2μmである。光導電層は例えばディッピング
法、ドクターブレード法、スプレー法、ロールコート法
等の塗布方法に依り容易に形成する事が出来る。
The thickness of the photoconductive film is generally 0.1 to 5 μm, preferably 0.2 to 2 μm. The photoconductive layer can be easily formed by a coating method such as a dipping method, a doctor blade method, a spray method, or a roll coating method.

尚本発明の光導電膜には上記アゾ顔料及びヒドラシン化
合物を複数混合し相互の特性を補う事も可能である。又
、各種特性の向上及び安定化を計る為に他の添加物を加
えても良い。又、光導電層を環境及び外力から守る為の
保護層及びビット間分離の機能を有する光遮断層等を光
導電層上に設置する事も出来る。又絶縁性基板及び電極
との密着性改善及び光導電層と電極間の電気的改質の為
に電極及び絶縁性基板と光導電層との間に新たな層を設
置する事も可能である。
It is also possible to mix a plurality of the above azo pigments and hydracine compounds in the photoconductive film of the present invention to complement each other's properties. Further, other additives may be added in order to improve and stabilize various properties. Further, a protective layer for protecting the photoconductive layer from the environment and external forces, a light blocking layer having a function of separating bits, etc. can be provided on the photoconductive layer. It is also possible to install a new layer between the electrode, the insulating substrate, and the photoconductive layer in order to improve the adhesion between the insulating substrate and the electrode and to improve the electrical properties between the photoconductive layer and the electrode. .

本発明で使用されるアゾ顔料及びヒドラゾン化合物の具
体例を下記に例示する。
Specific examples of the azo pigment and hydrazone compound used in the present invention are illustrated below.

(以下余白) 一 顔魁歯            顔料&顔料& (2)一般式 (−@−ai−CH4N=N−A ’)2顔料血   
         顔料歯部料地 (3)一般式 顔料&            顔料嵐(4)一般式 %式% (5)一般式 顔料歯            顔料り顔料歯 (の一般式 %式% 節部           簾穏 顔魁血 (7)一般式 %式% 顔料歯 − (8)一般式 %式% (9)一般式 顔料歯            顔料&顔料歯 (1の一般式 島          1     ゛(11)一般式
      。
(Left below) One-faced tooth Pigment & Pigment & (2) General formula (-@-ai-CH4N=N-A')2 Pigment blood
Pigment teeth materials (3) General formula pigments & Pigment Arashi (4) General formula % formula % (5) General formula pigment teeth Pigment teeth General formula % formula % Pigment tooth - (8) General formula % formula % (9) General formula pigment tooth Pigment & pigment tooth (1 general formula island 1 ゛ (11) General formula.

(12)一般式 %式% 中 N=N−A (14)一般式 %式% (15)一般式 顔料& (16)一般式 %式% (17)一般式 顔料胆            顔料胆顔料血    
         顔魁嵐顔料嵐 (18)一般式 %式% 顔料血             顔料血(19−C) (19−D) 顔料鳳 (20)一般式 %式% (21)一般式 顔料当           顔料嵐 顔料歯             顔料歯(22)一般
式 %式% (23)一般式 顔料&             顔料&顔料& (24)一般式 顔料施            顔料歯−−−−」し−
一一一(25)一般式 (26)一般式 とH5 (28)一般式 顔料&             顔料&顔料虱   
          顔料&(30)一般式 顔料&             顔料&顔料血   
         顔料嵐顔料&          
  顔料嵐顔料嵐           顔料血 顔料& (31)一般式 %式% 顔料嵐             顔料嵐顔料嵐   
        顔料血 M− 厘赴& ヒドラゾンヒA物の例示 2−1   −C)1.      <H,−82−2
−CH3−C2H,−H 2−3−CH,−CH,−@      −H2−4−
CH3−@       −82−5−C2H,−CH
,−H 2−6−C2Hs     −らH,−H2−7−C2
H,−CH2樽−H 2−8−CqHs−o−H 2−9鳴ル0H−CH3−H 2−10−C2)+401(−らH,−H2−11−C
,H,OH−CH2−@      −H2−12  
  −C2H,OH−@          −H2−
13−C2H4CQ      −ω、       
  −H2−14−C2H,CQ      −らH,
−82−15−C2H,CQ      −CH2−@
        −H2−16−14)14CΩ   
  R◇         −H2−17−CH,−C
H,−(、Q :’ 18−CH3−C2Hs          −
Br2−19    −CH,−C2H,−OCH。
(12) General formula % formula % N=NA (14) General formula % formula % (15) General formula pigment & (16) General formula % formula % (17) General formula pigment bile Pigment bile pigment blood
Gankai Arashi Pigment Arashi (18) General Formula % Formula % Pigment Blood Pigment Blood (19-C) (19-D) Pigment Feng (20) General Formula % Formula % (21) General Formula Pigment Part Pigment Arashi Pigment Teeth Pigment Teeth (22) General formula % Formula % (23) General formula pigment & Pigment & Pigment & (24) General formula pigment Pigment teeth
111 (25) General formula (26) General formula and H5 (28) General formula Pigments & Pigments & Pigments
Pigment & (30) General formula pigment & Pigment & pigment blood
Pigment Arashi Pigment &
Pigment Arashi Pigment Arashi Pigment Blood Pigment & (31) General Formula % Formula % Pigment Arashi Pigment Arashi Pigment Arashi
Pigment blood M-Examples of hydrazone A products 2-1-C)1. <H, -82-2
-CH3-C2H, -H 2-3-CH, -CH, -@ -H2-4-
CH3-@-82-5-C2H,-CH
, -H 2-6-C2Hs - et H, -H2-7-C2
H, -CH2 barrel -H 2-8-CqHs-o-H 2-9 ring 0H-CH3-H 2-10-C2) +401 (-raH, -H2-11-C
,H,OH-CH2-@-H2-12
-C2H,OH- @ -H2-
13-C2H4CQ-ω,
-H2-14-C2H,CQ -et al.H,
-82-15-C2H,CQ -CH2-@
-H2-16-14) 14CΩ
R◇ -H2-17-CH, -C
H,-(,Q:' 18-CH3-C2Hs-
Br2-19 -CH, -C2H, -OCH.

2−20    −CI(、−(4H,−戦2−2l−
CH3−CH,−@       −CH2−24鳴H
,−CH,イ1 2−25    −C2H,−CH,−0CH32−2
6鳴H,−CH,−No2 2−27    −C2H,<H,−◎      (
Q2−28    −C2)1.      −CH,
−◎      鵡H52−29−C2H,−CI、−
@       −CH。
2-20 -CI(,-(4H,-war2-2l-
CH3-CH, -@ -CH2-24 ring H
, -CH, I1 2-25 -C2H, -CH, -0CH32-2
6 ring H, -CH, -No2 2-27 -C2H,<H, -◎ (
Q2-28 -C2)1. -CH,
-◎ Parrot H52-29-C2H, -CI, -
@-CH.

2−30     (4H,−CH,−◎      
−Br2−32    −(4)t、0H−CH3−Q
c2H。
2-30 (4H, -CH, -◎
-Br2-32-(4)t,0H-CH3-Q
c2H.

2−33     イー(、OH−CI、      
    −C,H。
2-33 E(,OH-CI,
-C,H.

2−35    −C2H40H−C2H,−Br2−
36    −C,H40H−らH6−鶴2−37  
  −らl(,0)1     −CH,−◎    
  鳴H12−38−(4)1.OH−CH2−@  
     −0CII(。
2-35 -C2H40H-C2H, -Br2-
36 -C,H40H- et al H6-Tsuru 2-37
-ra l(,0)1 -CH,-◎
Naki H12-38-(4)1. OH-CH2-@
-0CII(.

2−41    −C,H2CO−CH,−CH2−4
2−C21(4CQ      −CzHs     
    −Br2−43     鳴ルCQ−C2H5
−No□2−45    −C,H,CQ      
−◎         −QC)13(以下余白) 次に本発明をさらに詳しく説明するために下記に実施例
及び比較例を示すが、本発明はこれらに限定されるもの
ではない。
2-41 -C, H2CO-CH, -CH2-4
2-C21(4CQ-CzHs
-Br2-43 Naruru CQ-C2H5
-No□2-45 -C,H,CQ
-◎ -QC) 13 (hereinafter blank) Next, in order to explain the present invention in more detail, Examples and Comparative Examples are shown below, but the present invention is not limited to these.

実施例1 ポリアミド(CM−8000;東し株式会社製)0.4
重量部、 メタノール7重量部、ブチルアルコール3重
量部の溶液を調製61次いでこの液をガラス基板上に第
4図に示したA1電極パターンを有する基板上に乾燥時
の膜厚が0.3μmに成る様ディッピング法で塗布した
。しかる後100℃の恒温槽中で30分乾燥した。
Example 1 Polyamide (CM-8000; manufactured by Toshi Co., Ltd.) 0.4
Prepare a solution containing 7 parts by weight of methanol and 3 parts by weight of butyl alcohol61 Then, apply this solution to a glass substrate having an A1 electrode pattern shown in FIG. 4 to a dry film thickness of 0.3 μm. It was applied using a dipping method to achieve the desired results. Thereafter, it was dried for 30 minutes in a constant temperature bath at 100°C.

次に構造式(化合物Na2−8)で示されるヒドラゾン
化合物2.7重量部、ポリカーボネート樹脂(パンライ
トに−1300;帝人化成株式会社製)3重量部テトラ
ヒドロフラン77重量部溶液及び構造式(アゾ顔料Nα
1)で示されるアゾ顔料2重量部をボールミルにて充分
に粉砕した。
Next, 2.7 parts by weight of a hydrazone compound represented by the structural formula (compound Na2-8), 3 parts by weight of polycarbonate resin (Panlite-1300; manufactured by Teijin Kasei Ltd.), 77 parts by weight of tetrahydrofuran solution, and a solution of the structural formula (azo pigment Nα
2 parts by weight of the azo pigment shown in 1) was sufficiently ground in a ball mill.

次いでこの粉砕混合物を取り出し、ゆっくり攪拌しなが
らテトラヒドロフランを加え固型分濃度2重量パーセン
トの光電変換層形成液(1)を調製した。しかる後0.
3μm膜厚のポリアミド層が形成された基板上にディッ
ピング法にて乾燥時1μmの膜厚が得られる裸光電変換
層形成液(I)を塗布し、 しかる後100℃で30分
乾燥し、本発明の光電変換素子(1)を得た。
Next, this pulverized mixture was taken out, and tetrahydrofuran was added while stirring slowly to prepare a photoelectric conversion layer forming liquid (1) having a solid content concentration of 2% by weight. After that, 0.
On a substrate on which a polyamide layer with a thickness of 3 μm has been formed, a naked photoelectric conversion layer forming solution (I) that can obtain a film thickness of 1 μm when dried is applied by a dipping method, and then dried at 100° C. for 30 minutes. A photoelectric conversion element (1) of the invention was obtained.

実施例2 構造式(化合物k 2−5 )で示されるヒドラゾン化
合物、及び構造式(アゾ顔料Nα6)で示さ九るアゾ顔
料を用い他は実施例1と同様な方法で本発明の光電変換
素子(n)を得た。
Example 2 A photoelectric conversion element of the present invention was produced in the same manner as in Example 1 except for using a hydrazone compound represented by the structural formula (compound k2-5) and an azo pigment represented by the structural formula (azo pigment Nα6). (n) was obtained.

比較例1 実施例1と同様にA1電極の形成された基板上に0.3
μm膜厚のポリアミド層を形成した。次いで実施例1で
使用した構造式(アゾ顔料覧1)で示されるアゾ顔料2
重量部、ポリカーボネート樹脂(パンライト、K−13
00;帝人化成株式会社製)3重量部、テトラヒドロフ
ラン50重量部をボールミルにて充分に粉砕した。得ら
れた分散液を取り出し、ゆっくり攪拌しながらテトラヒ
ドロフランを加え固型分濃度2重量パーセントの光電変
換層形成液(III)を調製し、実施例と同様な方法で
乾燥時膜厚1μmの光電変換層を設け、比較光電変換素
子(m)を得た。
Comparative Example 1 Similar to Example 1, 0.3
A polyamide layer with a thickness of μm was formed. Next, azo pigment 2 shown by the structural formula (Azo pigment list 1) used in Example 1
Part by weight, polycarbonate resin (Panlite, K-13
00; manufactured by Teijin Kasei Ltd.) and 50 parts by weight of tetrahydrofuran were sufficiently ground in a ball mill. The resulting dispersion was taken out, and while slowly stirring, tetrahydrofuran was added to prepare a photoelectric conversion layer forming solution (III) with a solid content concentration of 2% by weight, and photoelectric conversion layer forming solution (III) with a dry film thickness of 1 μm was prepared in the same manner as in the example. A comparative photoelectric conversion element (m) was obtained by providing a layer.

比較例2 実施例2で使用した構造式(アゾ顔料Nα6)で示され
るアゾ顔料を用いた他は比較例1と全く同様な方法で比
較光電変換素子(IV)を得た。
Comparative Example 2 A comparative photoelectric conversion element (IV) was obtained in exactly the same manner as in Comparative Example 1, except that the azo pigment represented by the structural formula (azo pigment Nα6) used in Example 2 was used.

この様にして得られた光電変換素子(1)、(II)、
(m)、(IV)のSN比(光電流/暗電流)及び光応
答速度(立上り時間;Tr、立下り時間;Td)を表1
.2、に示す。但し実施例、比較例で採用した素子構造
はプレーナー型であり、Al電極の電極間距離は5μm
、電極膜厚は1μmである(第4図)。又ビット間分離
の目的で第4.5図に示す如く光遮断層を設は素子特性
の評価を実施した。
Photoelectric conversion elements (1), (II) obtained in this way,
Table 1 shows the SN ratio (photocurrent/dark current) and photoresponse speed (rise time; Tr, fall time; Td) of (m) and (IV).
.. 2. However, the element structure adopted in the examples and comparative examples is a planar type, and the distance between the Al electrodes is 5 μm.
, the electrode film thickness is 1 μm (FIG. 4). Furthermore, for the purpose of separating bits, a light blocking layer was provided as shown in FIG. 4.5, and device characteristics were evaluated.

SN比は素子に直流電圧を印加し各電界強度に対する光
電流(σr)/暗電料(σd)比で表わした。又光応答
速度はlX10’V/■の電界下に於ける光電流源形(
第6図参照)よりTr、Tdを求めた。Tr、Tdの定
義は第6図に示した。
The SN ratio was expressed as the photocurrent (σr)/dark charge (σd) ratio for each electric field strength when a DC voltage was applied to the element. In addition, the photoresponse speed is 1 x 10'V/■ under an electric field of photocurrent source type (
Tr and Td were determined from (see FIG. 6). The definitions of Tr and Td are shown in FIG.

SN比、光応答速度共に測定時の照射光量はタングステ
ンランプで1701ux(色濃度:2850’ K)で
ある。
The amount of irradiated light when measuring both the SN ratio and the optical response speed was 1701 ux (color density: 2850'K) using a tungsten lamp.

表−1 表−2 表1.2.より電界強度lX10’V/■の時に本発明
に依る光電変換素子(1)、(II)は同一のアゾ顔料
を用いたがヒドラゾン化合物を含まない比較品である光
電変換素子(nlL (■)より優り、103台のS 
N比が得られる事が判った。又応答速度Tr、Tdに於
ける本発明の比較品と比較した場合の改善効果は歴然と
して居り、アゾ顔料、結着樹脂にヒドラゾン化合物を添
加する事で光導電層中に於けるキャリアー移動度改善を
狙った本発明の効果であると判断出来る。又各ビットに
於けるSN比、Tr、Tdの特性はほぼ同一の値を示し
ビット間分離に何等問題なくビット間バラツキの少い安
定な光電変換素子の提供が可能であると判断出来る。
Table-1 Table-2 Table 1.2. When the electric field strength is lX10'V/■, the photoelectric conversion elements (1) and (II) according to the present invention are compared to the photoelectric conversion element (nlL (■)) which is a comparative product that uses the same azo pigment but does not contain a hydrazone compound. Better than 103 S
It was found that the N ratio could be obtained. In addition, the improvement effect in response speed Tr and Td when compared with the comparative product of the present invention is obvious, and by adding a hydrazone compound to the azo pigment and binder resin, carrier mobility in the photoconductive layer is improved. This can be judged to be an effect of the present invention aimed at improvement. Moreover, the characteristics of the SN ratio, Tr, and Td in each bit show almost the same values, and it can be judged that there is no problem with the separation between bits, and it is possible to provide a stable photoelectric conversion element with little variation between bits.

墓−一来 以上述べたように、本発明によれば大規模な成膜が可能
な事から長尺(メートルサイズ)の等倍センサーが可能
であり、さらにまたアゾ顔料にドナーヒドラゾン化合物
を添加した事により応答速度及びSN比(光電流/暗電
流)特性に秀れた有機光電変換素子が得られる。
As mentioned above, according to the present invention, it is possible to form a large-scale film, making it possible to create a long (meter-sized) sensor of the same size. By doing so, an organic photoelectric conversion element with excellent response speed and signal-to-noise ratio (photocurrent/dark current) characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は密着型画像読取等倍センサーの全体の構成例を
示す概略図である。 第2a図及び第2b図は回路構成例を示す読出し回路図
である。 第3a図及び第3b図は光導電膜の素子構造を示す概略
図である。 第4図は本発明で使用する光電変換素子の概略平面図で
あり、第5図は前記光電変換素子の概略断面図である。 第6図はI X 10’V/ mの電界下における光電
流波形であり、光応答速度は立上り時間Tr及び立下り
時間Tdで示される。 1・・・原稿       2・・・光源3・・・フォ
トセンサーアレイ
FIG. 1 is a schematic diagram showing an example of the overall configuration of a contact type image reading equal-magnification sensor. FIGS. 2a and 2b are readout circuit diagrams showing examples of circuit configurations. FIGS. 3a and 3b are schematic diagrams showing the element structure of the photoconductive film. FIG. 4 is a schematic plan view of a photoelectric conversion element used in the present invention, and FIG. 5 is a schematic cross-sectional view of the photoelectric conversion element. FIG. 6 shows a photocurrent waveform under an electric field of I x 10'V/m, and the photoresponse speed is indicated by the rise time Tr and fall time Td. 1... Original 2... Light source 3... Photo sensor array

Claims (1)

【特許請求の範囲】 1、絶縁性基体上に個別電極、共通電極及び光導電体を
設置して成る画像読取等倍センサーに於いて、前記光導
電体が下記一般式 ▲数式、化学式、表等があります▼ 〔式中、R_1はメチル基、エチル基、2−ヒドロキシ
エチル基、又は2−クロルエチル基を表わし、R_2は
メチル基、エチル基、ベンジル基又はフェニル基を表わ
し、R_3は水素、塩素、臭素、炭素数1〜4のアルキ
ル基、炭素数1〜4のアルコキシ基、ジアルキルアミノ
基又はニトロ基を表わす〕 で表わされるヒドラゾン化合物の少なくとも1つと、下
記一般式 (1) ▲数式、化学式、表等があります▼ (2) ▲数式、化学式、表等があります▼ (3) ▲数式、化学式、表等があります▼ (4) ▲数式、化学式、表等があります▼ (5) ▲数式、化学式、表等があります▼ (6) ▲数式、化学式、表等があります▼ (7) ▲数式、化学式、表等があります▼ (8) ▲数式、化学式、表等があります▼ (9) ▲数式、化学式、表等があります▼ (10) ▲数式、化学式、表等があります▼ 〔但し、前記一般式が(1)〜(10)において、Aは
、▲数式、化学式、表等があります▼又は▲数式、化学
式、表等があります▼ ここでXはベンゼン環、ナフタレン環などの芳香族もし
くは、インドール環、カルバゾール環、ベンジフラン環
などのヘテロ環または、それらの置換体を表わし、Ar
_1はベンゼン環、ナフタレン環などの芳香族。 もしくは、ジベンゾフラン環などのヘテロ環またはそれ
らの置換体を表わし、Ar_2はベンゼン環、ナフタレ
ン環などの芳香族またはそれらの置換体を表わし、R_
1は水素、低級アルキル基、フェニル基またはその置換
体を表わし、またR_2は低級アルキル基、フェニル基
、カルボキシル基または、そのエステルを表わす〕 (11) ▲数式、化学式、表等があります▼ (12) ▲数式、化学式、表等があります▼ (13) ▲数式、化学式、表等があります▼ (14) ▲数式、化学式、表等があります▼ (15) ▲数式、化学式、表等があります▼ (16) ▲数式、化学式、表等があります▼ (17) ▲数式、化学式、表等があります▼ (18) ▲数式、化学式、表等があります▼ (19) ▲数式、化学式、表等があります▼ (20) ▲数式、化学式、表等があります▼ (21) ▲数式、化学式、表等があります▼ (22) ▲数式、化学式、表等があります▼ (23) ▲数式、化学式、表等があります▼ (24) ▲数式、化学式、表等があります▼ 〔但し、前記一般式(11)〜(24)において、Aは
、▲数式、化学式、表等があります▼又は▲数式、化学
式、表等があります▼又は、▲数式、化学式、表等があ
ります▼ ここでXはベンゼン環、ナフタレン環などの芳香族、イ
ンドール環、カルバゾール環、ベンジフラン環などのヘ
テロ環または、それらの置換体、Ar_1はベンゼン環
、ナフタレン環などの芳香族、ジベンゾフラン環などの
ヘテロ環または、それらの置換体、 Ar_2およびAr_3は、ベンゼン環、ナフタレン環
などの芳香族またはそれらの置換体、 R_1およびR_3は水素、低級アルキル基、フェニル
基またはその置換体、R_2は低級アルキル基、カルボ
キシル基またはそのエステルを表わす〕 (25) ▲数式、化学式、表等があります▼ (26) ▲数式、化学式、表等があります▼ (27) ▲数式、化学式、表等があります▼ 〔但し、前記一般式(25)〜(27)において、式中
Arは置換又は、非置換のフェニル基、 置換又は非置換のナフチル基、アントリル 基、ピレニル基、ピリジル基、チェニル基、フリル基及
びカルバゾリル基を表わす〕 (28) ▲数式、化学式、表等があります▼ (29) ▲数式、化学式、表等があります▼ 〔但し、前記一般式(28)〜(29)において、Xは
ベンゼン環、ナフタレン環などの芳香族、インドール環
、カルバゾール環、ベンジフラン環などのヘテロ環又は
、それらの置換体、R_1は、ベンゼン環、ナフタレン
環などの芳香環、ジベンゾフラン環、カルバゾール環な
どのヘテロ環又はそれらの置換体、R_2は水素、低級
アルキル基、フェニル基又はその置換体を表わす〕 (30) ▲数式、化学式、表等があります▼ (31) ▲数式、化学式、表等があります▼ 〔但し、前記一般式(30〜31)において、Xは置換
もしくは無置換の芳香環、または、ヘテロ環を表わし、
Arは置換もしくは無置換の芳香環または、ヘテロ環を
表わす〕 で表わされるアゾ顔料の少なくとも1つを有効成分とし
て含有する事を特徴とする画像読取等倍センサー。
[Scope of Claims] 1. In an image reading equal-magnification sensor comprising individual electrodes, a common electrode, and a photoconductor disposed on an insulating substrate, the photoconductor has the following general formula ▲ mathematical formula, chemical formula, table etc. ▼ [In the formula, R_1 represents a methyl group, ethyl group, 2-hydroxyethyl group, or 2-chloroethyl group, R_2 represents a methyl group, ethyl group, benzyl group, or phenyl group, R_3 represents hydrogen, chlorine, bromine, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a dialkylamino group, or a nitro group] and at least one hydrazone compound represented by the following general formula (1) ▲ Formula, There are chemical formulas, tables, etc. ▼ (2) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (3) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (4) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (5) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (6) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (7) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (8) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (9 ) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (10) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [However, in the above general formulas (1) to (10), A is ▼ or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ Here, X represents an aromatic ring such as a benzene ring or a naphthalene ring, a hetero ring such as an indole ring, a carbazole ring, or a benzifuran ring, or a substituted product thereof. Ar
_1 is an aromatic group such as a benzene ring or naphthalene ring. Alternatively, it represents a hetero ring such as a dibenzofuran ring or a substituted product thereof, Ar_2 represents an aromatic ring such as a benzene ring or a naphthalene ring or a substituted product thereof, and R_
1 represents hydrogen, a lower alkyl group, a phenyl group, or a substitute thereof, and R_2 represents a lower alkyl group, a phenyl group, a carboxyl group, or an ester thereof] (11) ▲ Contains mathematical formulas, chemical formulas, tables, etc. ▼ ( 12) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (13) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (14) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (15) ▲There are mathematical formulas, chemical formulas, tables, etc. ▼ (16) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (17) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (18) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (19) ▲ Mathematical formulas, chemical formulas, tables, etc. ▼ (20) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (21) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (22) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (23) ▲ Mathematical formulas, chemical formulas, There are tables, etc. ▼ (24) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [However, in the general formulas (11) to (24) above, A is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ or ▲ Mathematical formulas, There are chemical formulas, tables, etc. ▼ or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ Here, Ar_1 is an aromatic ring such as a benzene ring or a naphthalene ring, a hetero ring such as a dibenzofuran ring, or a substituted product thereof; Ar_2 and Ar_3 are an aromatic ring such as a benzene ring or a naphthalene ring or a substituted product thereof; R_1 and R_3 represents hydrogen, a lower alkyl group, a phenyl group, or a substituent thereof, and R_2 represents a lower alkyl group, a carboxyl group, or an ester thereof] (25) ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (26) ▲Mathematical formulas, chemical formulas, and tables (27) ▲ There are mathematical formulas, chemical formulas, tables, etc. Represents a naphthyl group, anthryl group, pyrenyl group, pyridyl group, chenyl group, furyl group, and carbazolyl group] (28) ▲ Contains mathematical formulas, chemical formulas, tables, etc. ▼ (29) ▲ Contains mathematical formulas, chemical formulas, tables, etc. ▼ [ However, in the above general formulas (28) to (29), , an aromatic ring such as a naphthalene ring, a hetero ring such as a dibenzofuran ring, a carbazole ring, or a substituted product thereof; R_2 represents hydrogen, a lower alkyl group, a phenyl group, or a substituted product thereof] (30) ▲ Numerical formula, chemical formula, table, etc. ▼ (31) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ [However, in the above general formulas (30 to 31), X represents a substituted or unsubstituted aromatic ring or a hetero ring,
Ar represents a substituted or unsubstituted aromatic ring or a heterocycle.] An image reading 1-magnification sensor comprising at least one azo pigment represented by the following as an active ingredient.
JP60127495A 1985-06-12 1985-06-12 Equal magnification image-pickup sensor Pending JPS61285262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60127495A JPS61285262A (en) 1985-06-12 1985-06-12 Equal magnification image-pickup sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60127495A JPS61285262A (en) 1985-06-12 1985-06-12 Equal magnification image-pickup sensor

Publications (1)

Publication Number Publication Date
JPS61285262A true JPS61285262A (en) 1986-12-16

Family

ID=14961377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60127495A Pending JPS61285262A (en) 1985-06-12 1985-06-12 Equal magnification image-pickup sensor

Country Status (1)

Country Link
JP (1) JPS61285262A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334856A (en) * 1990-07-03 1994-08-02 Mitsubishi Kasei Corporation Image readout element with oxytitanium phthalocyanine
US5350915A (en) * 1992-06-18 1994-09-27 Mitsubishi Kasei Corporation Image sensor using organic photoconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334856A (en) * 1990-07-03 1994-08-02 Mitsubishi Kasei Corporation Image readout element with oxytitanium phthalocyanine
US5350915A (en) * 1992-06-18 1994-09-27 Mitsubishi Kasei Corporation Image sensor using organic photoconductor

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