JPS61281577A - Semiconductor optical device - Google Patents

Semiconductor optical device

Info

Publication number
JPS61281577A
JPS61281577A JP12446985A JP12446985A JPS61281577A JP S61281577 A JPS61281577 A JP S61281577A JP 12446985 A JP12446985 A JP 12446985A JP 12446985 A JP12446985 A JP 12446985A JP S61281577 A JPS61281577 A JP S61281577A
Authority
JP
Japan
Prior art keywords
lens
emitting element
etching
semiconductor light
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12446985A
Other languages
Japanese (ja)
Inventor
Tomoko Abe
阿部 友子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12446985A priority Critical patent/JPS61281577A/en
Publication of JPS61281577A publication Critical patent/JPS61281577A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable automatic high-precision axial alignment by mounting a semiconductor light-emitting element and a lens base onto the same substrate and preparing the end surface of the semiconductor light-emitting element and a groove fixing a lens through etching. CONSTITUTION:A photo-resist is applied onto a wafer to which the processes of epitaxial growth and the evaporation of an electrode are completed. When the wafer is etched by a HCl+CH3COOH+HPO3 group etching liquid, a vertical surface is obtained in the (011) direction (direction of the arrow A) and a V groove shape is acquired in the (011) direction (direction of the arrow B). Consequently, the end surface of a semiconductor laser 2 and a lens base 3 are obtained through the same etching, and a semiconductor laser is acquired through cleavage at the position of a dotted line. Accordingly, axial alignment requiring high precision is obtained automatically only by loading a lens on the lens base.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体発光素子と光ファイバとを結合した半導
体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor device in which a semiconductor light emitting element and an optical fiber are coupled.

従来の技術 半導体発光素子から光を光ファイバへ効率良く取り出す
ためには、レンズ等の光学系を使用する。
2. Description of the Related Art In order to efficiently extract light from a semiconductor light emitting device to an optical fiber, an optical system such as a lens is used.

半導体発光素子からある広がり角をもって出射した光は
、レンズで収束され効率良く光ファイバへと取り出され
る。この時、レンズが微小である程、結合効率は高くな
るが、レンズを半導体発光素子の発光部へ近づける必要
があり、また軸合わせは高精度を要求される。
Light emitted from a semiconductor light emitting device with a certain spread angle is converged by a lens and efficiently extracted to an optical fiber. At this time, the smaller the lens, the higher the coupling efficiency, but it is necessary to bring the lens closer to the light emitting part of the semiconductor light emitting element, and high precision is required for axis alignment.

2ヤ。2 years.

従来の微小レンズを用いた光半導体装置は、例えば特開
昭57−1288号公報に示されているように、第4図
のようになっていた。すなわち、半導体レーザ2を搭載
するヒートシンクに溝4を加工しレンズ台3とし、この
溝4にレンズ1を合致させ、半導体レーザの位置を調整
し軸合わせを行っていた。
A conventional optical semiconductor device using a microlens is shown in FIG. 4, as shown in, for example, Japanese Patent Laid-Open No. 57-1288. That is, a groove 4 is formed in the heat sink on which the semiconductor laser 2 is mounted to form the lens stand 3, and the lens 1 is aligned with the groove 4 to adjust the position of the semiconductor laser and perform axis alignment.

発明が解決しようとする問題点 しかし、ヒートシンクをレンズ台として使用する半導体
装置では、半導体発光素子の発光部をレンズの中心に合
致させる位置合わせを必要とし、高精度が要求される半
導体発光素子とレンズの位置合わせは高度の技術を必要
とし、実際の結合に当ってはしばしは結合効率の低下を
もたらしていた0 問題点を解決するだめの手段 上記問題点を解決するため本発明は、半導体発光素子と
レンズ台を同一基板上に有し、半導体発光素子の端面と
レンズを固定する溝とを工・ンチングで作成するもので
ある。
Problems to be Solved by the Invention However, in a semiconductor device that uses a heat sink as a lens stand, it is necessary to align the light emitting part of the semiconductor light emitting element to the center of the lens, and it is difficult to align the light emitting part of the semiconductor light emitting element with the center of the lens, which requires high precision. Lens positioning requires sophisticated technology, and in actual coupling, it often results in a decrease in coupling efficiency.Means for Solving the ProblemsIn order to solve the above problems, the present invention The light-emitting element and the lens stand are on the same substrate, and the end face of the semiconductor light-emitting element and the groove for fixing the lens are created by machining.

3へ一/ 作  用 本発明は、同−基板上に半導体発光素子とレンズ台を有
することにより、レンズ台にレン妾を搭載するだけで高
精度を要する軸合わせが自動的に得られるものである。
3. Function The present invention has a semiconductor light emitting element and a lens stand on the same substrate, so that axis alignment, which requires high precision, can be automatically achieved simply by mounting the lens stand on the lens stand. be.

実施例 第1図は本発明の半導体装置の一実施例を示す斜視図で
ある。1はレンズであり、半導体レーザ2の発光部5に
レンズ1の中心が合致するような深さの溝4と端面6が
エツチングにより形成されている。
Embodiment FIG. 1 is a perspective view showing an embodiment of the semiconductor device of the present invention. Reference numeral 1 denotes a lens, and a groove 4 and an end surface 6 are formed by etching so that the center of the lens 1 coincides with the light emitting portion 5 of the semiconductor laser 2 .

次に、この実施例の構造の半導体装置の作成法について
説明する。第2図はエピタキシャル成長、電極蒸着の工
程の終了したウェハーを示す斜視図である。このウェハ
ーに第3図の平面図で示した斜線部にフォトレジストを
塗布する。これを、HCl 十CHC0OH+HPO3
系のエツチング液でエツチングを行うと、(011)方
向(矢印入方向)は垂直面が得られ(011)方向(矢
印B方向)はV溝の形状が得られる。このようにして、
同一のエンチングにより、半導体レーザ2の端面及びレ
ンズ台3が得られる。さらに点線の位置で襞間を行うこ
とにより、第1図のような形状の半導体レーザが得られ
る。
Next, a method for manufacturing a semiconductor device having the structure of this embodiment will be explained. FIG. 2 is a perspective view showing a wafer after epitaxial growth and electrode deposition steps have been completed. A photoresist is applied to this wafer in the shaded area shown in the plan view of FIG. Add this to HCl 10CHC0OH+HPO3
When etching is performed using a type of etching solution, a vertical surface is obtained in the (011) direction (arrow direction) and a V-groove shape is obtained in the (011) direction (arrow B direction). In this way,
The end face of the semiconductor laser 2 and the lens stand 3 are obtained by the same etching. Furthermore, by performing fold spacing at the positions indicated by dotted lines, a semiconductor laser having a shape as shown in FIG. 1 can be obtained.

なお、以上実施例は半導体レーザの場合で説明したが、
端面放射型LEDなとの場合でも同様である。
Note that although the above embodiments have been explained in the case of a semiconductor laser,
The same applies to edge-emitting LEDs.

発明の効果 本発明は同一基板上に半導体発光素子とレンズを搭載す
るレンズ台を有する構造をもっているので、レンズ台に
レンズを搭載するだけで高精度を要する軸合わせが自動
的に得られる。
Effects of the Invention Since the present invention has a structure having a lens stand on which a semiconductor light emitting element and a lens are mounted on the same substrate, axis alignment which requires high precision can be automatically obtained simply by mounting the lens on the lens stand.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の半導体装置の胴視図、第2
図は加工前のウェハーの斜視図、第3図はレジストの塗
布されたウェハーの平面図、第4図は従来の半導体装置
を示す斜視図である。 1・・・・・・レンズ、2・・・・・半導体レーザ、3
・・・・・・レンズ台、4・・・・・・溝、5・・・・
・・発光部、6・・・・・・端面。
FIG. 1 is a trunk view of a semiconductor device according to an embodiment of the present invention, and FIG.
3 is a perspective view of a wafer before processing, FIG. 3 is a plan view of a wafer coated with resist, and FIG. 4 is a perspective view of a conventional semiconductor device. 1...Lens, 2...Semiconductor laser, 3
... Lens stand, 4 ... Groove, 5 ...
...Light emitting part, 6... End face.

Claims (1)

【特許請求の範囲】[Claims] 半導体発光素子とレンズ台とを同一基板上に有し、半導
体発光素子の端面とレンズを固定する溝とをエッチング
で作成してなる半導体光装置。
A semiconductor optical device has a semiconductor light emitting element and a lens stand on the same substrate, and a groove for fixing the end face of the semiconductor light emitting element and the lens is created by etching.
JP12446985A 1985-06-07 1985-06-07 Semiconductor optical device Pending JPS61281577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12446985A JPS61281577A (en) 1985-06-07 1985-06-07 Semiconductor optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12446985A JPS61281577A (en) 1985-06-07 1985-06-07 Semiconductor optical device

Publications (1)

Publication Number Publication Date
JPS61281577A true JPS61281577A (en) 1986-12-11

Family

ID=14886292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12446985A Pending JPS61281577A (en) 1985-06-07 1985-06-07 Semiconductor optical device

Country Status (1)

Country Link
JP (1) JPS61281577A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500869A (en) * 1993-03-23 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser array device, semiconductor laser device, and production methods therefor
US5544184A (en) * 1994-06-10 1996-08-06 Sdl, Inc. Semiconductor illumination system with expansion matched components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500869A (en) * 1993-03-23 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser array device, semiconductor laser device, and production methods therefor
US5544184A (en) * 1994-06-10 1996-08-06 Sdl, Inc. Semiconductor illumination system with expansion matched components

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