JPS61263235A - Inspecting device - Google Patents

Inspecting device

Info

Publication number
JPS61263235A
JPS61263235A JP60103738A JP10373885A JPS61263235A JP S61263235 A JPS61263235 A JP S61263235A JP 60103738 A JP60103738 A JP 60103738A JP 10373885 A JP10373885 A JP 10373885A JP S61263235 A JPS61263235 A JP S61263235A
Authority
JP
Japan
Prior art keywords
pellet
inspection
inspected
operating state
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60103738A
Other languages
Japanese (ja)
Inventor
Takashi Sakamoto
隆 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60103738A priority Critical patent/JPS61263235A/en
Publication of JPS61263235A publication Critical patent/JPS61263235A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To inspect an element to be inspected with reproducibility at a rapid speed by using an infrared ray camera for inspecting the element, i.e., a semiconductor integrated circuit to discover a defective portion upon heating of the element. CONSTITUTION:An external light ray to be emitted to a pellet 3 is interrupted by an interrupting film 10, and the prescribed operation signal is input through leads 5 led to a testing circuit to the pellet 3 to become an operating state. Then, defective portions with heating such as gate damage or a latchup in a semiconductor integrated circuit formed on the pellet 3 is observed by an infrared ray camera 8 for recognizing the image of the pellet 3 by detecting the temperature distribution of the pellet 3 to rapidly specify the defective portion of the pellet 3, thereby accelerating the inspecting work in the operating state of the pellet 3.

Description

【発明の詳細な説明】 [技術分野] 本発明は、検査技術、特に、半導体装置の製造における
故障解析検査に適用して有効な技術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an inspection technique, and particularly to a technique effective when applied to failure analysis inspection in the manufacture of semiconductor devices.

[背景技術] たとえば、ベレットなどの半導体集積回路素子の動作状
態における検査においては、外部から素子内部のゲート
破壊やラッチアンプなどの故障個所を発見するため次の
ような方法が考えられる。
[Background Art] For example, when inspecting the operating state of a semiconductor integrated circuit device such as a pellet, the following methods can be considered in order to discover failures such as gate breakage and latch amplifiers inside the device from the outside.

すなわち、外部に露出されたベレットの表面に温度によ
つて色が変化される性質を有する液晶を塗布し、ベレッ
トに所定の動作信号が与えられた際にぺL・ットの内部
の静電破壊やラッチアップ部位などの故障個所における
異常電流などによる発熱を、ペレット表面に塗布された
液晶の色の変化として検知することによってベレットの
故障個所を特定するものである。
In other words, a liquid crystal whose color changes depending on the temperature is applied to the surface of the pellet exposed to the outside, and when a predetermined operating signal is applied to the pellet, the electrostatic charge inside the pellet is applied. The malfunctioning part of the pellet can be identified by detecting the heat generated by abnormal current at the malfunctioning part, such as a breakage or latch-up part, as a change in the color of the liquid crystal coated on the pellet surface.

しかしながら、上記の方法では、塗布される液晶によっ
てベレットが汚染され、ベレットの電気的な特性などが
変化されたり、液晶の経時的な特性の変化によって検査
結果に再現性がないなどのなどの欠点があることを本発
明者は見いだした。
However, the above method has drawbacks such as the pellet being contaminated by the applied liquid crystal, which may change the electrical characteristics of the pellet, and the test results not being reproducible due to changes in the properties of the liquid crystal over time. The inventor has discovered that there is.

また、他の検査方法としては、ベレットを所定の暗室部
に設置して動作させ、ベレットの内部の静電破壊やラッ
チアップ部位などの故障個所における発熱に伴って発生
される微弱な光線を所定の光学顕微鏡などによって観察
することが考えられるが、光線が微弱であるため故障個
所の発見に長時間を要し、検査効率が低いなどの欠点が
あることを本発明者は見いだした。
Another inspection method is to install a pellet in a designated dark room and operate it, and use a predetermined amount of weak light that is generated due to heat generation at failure points such as electrostatic damage or latch-up parts inside the pellet. However, the present inventors have found that the light beam is weak, so it takes a long time to find the failure location, and the inspection efficiency is low.

なお、半導体集積回路素子の検査について説明されてい
る文献としては、株式会社工業調査会、昭和58年11
月15日発行「電子材料」1984年別冊、P213〜
P220がある。
The literature explaining the inspection of semiconductor integrated circuit devices is Kogyo Kenkyukai Co., Ltd., November 1982.
"Electronic Materials" 1984 special issue, published on the 15th of May, P213~
There is P220.

[発明の目的] 本発明の目的は、迅速で再現性のある検査を行うことが
可能な検査技術を提供することにある。
[Object of the Invention] An object of the present invention is to provide an inspection technique that allows rapid and reproducible inspection.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、つぎの通りである。
[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、被検査物の検査に赤外線カメラを用いること
によって、たとえば被検査物の発熱を伴う故障個所の発
見を容易にして、迅速で再現性のある被検査物の検査を
可能にしたものである。
In other words, by using an infrared camera to inspect the inspected object, for example, it is possible to easily find a faulty part of the inspected object due to heat generation, and to enable rapid and reproducible inspection of the inspected object. .

[実施例] 第1図は、本発明の一実施例である検査装置の説明図で
ある。
[Example] FIG. 1 is an explanatory diagram of an inspection apparatus that is an example of the present invention.

水平に設けられた検査ステージ1の上には、ソケットボ
ード2が載置されている。
A socket board 2 is placed on a horizontally provided inspection stage 1.

さらに、このソケットボード2の上には、半導体集積回
路素子であるベレット3(被検査物)が搭載されるセラ
ミックスなどからなるパッケージベース4が位置されて
いる。
Furthermore, a package base 4 made of ceramics or the like is placed on the socket board 2, on which a pellet 3 (test object), which is a semiconductor integrated circuit element, is mounted.

そして、パッケージベース4に固定された複数のリード
5はボンディングワイヤ6によってベレット3と電気的
に接続され、さらにこのリード5はソケットボード2の
所定のコンタクト穴(図示せず)に挿入されて所定の試
験回路部(図示せず)に導通されている。
The plurality of leads 5 fixed to the package base 4 are electrically connected to the pellet 3 by bonding wires 6, and the leads 5 are further inserted into predetermined contact holes (not shown) of the socket board 2 to form a predetermined contact hole (not shown) in the socket board 2. The test circuit section (not shown) is connected to the test circuit section (not shown).

さらに、ソケットボード2の上方には、光学レンズ7お
よび赤外線カメラ8がソケットボード2に対して軸がほ
ぼ垂直となるように設けられ、ソケットボード2の上に
位置されるバフケージベース4に搭載されたベレット3
の、前記試験回路部からの入力信号などによって動作状
態にあるときの像が拡大されて赤外線カメラ8に入射さ
れ、ベレット3の各部から放射される赤外線の強度、す
ナワチヘレット3各部の温度分布に基づいてベレット3
の像が構成されるものである。
Furthermore, an optical lens 7 and an infrared camera 8 are provided above the socket board 2 so that their axes are substantially perpendicular to the socket board 2, and are mounted on a buff cage base 4 positioned above the socket board 2. beret 3
The image in the operating state is magnified by the input signal from the test circuit section, etc., and is incident on the infrared camera 8, and the intensity of the infrared rays emitted from each part of the bellet 3 and the temperature distribution of each part of the bellet 3 are measured. Based on Beret 3
The image of

そして、赤外線カメラ8に接続され、たとえば陰極線管
などで構成される表示部9において前記の如く構成され
たベレット3の像が観察されるものである。
The image of the pellet 3 constructed as described above is then observed on a display section 9 connected to an infrared camera 8 and constructed of, for example, a cathode ray tube.

また、前記ソケットボード2およびソケットボード2の
上方に設けられた光学レンズ7、赤外線カメラ8の一部
を囲繞するように遮光、!10が設けられ、ソケットボ
ード2の上に載置されたパッケージベース4に搭載され
たベレット3に外部の光線が照射されることが防止され
ように構成されており、動作状態で検査されるベレット
3の光線の照射に起因する誤動作が回避されるものであ
る。
In addition, light is shielded so as to partially surround the socket board 2 and the optical lens 7 and infrared camera 8 provided above the socket board 2. 10 is provided to prevent external light from being applied to the pellet 3 mounted on the package base 4 placed on the socket board 2, and the pellet is inspected in an operating state. This avoids malfunctions caused by the irradiation of the light beam in step 3.

以下、本実施例の作用について説明する。The operation of this embodiment will be explained below.

初めに、ベレット3がマウントされたパッケージベース
4が、このパッケージベース4に固定され、ポンディン
グワイヤ6によってベレット3と電気的に接続されたり
−ド5をソケットボード2の所定のコンタクト穴に挿入
することによってセットされる。
First, a package base 4 on which a pellet 3 is mounted is fixed to the package base 4, and a wire 5 is electrically connected to the pellet 3 by a bonding wire 6 and inserted into a predetermined contact hole of the socket board 2. It is set by

次に、ベレット3に照射される外部光線が遮光幕10に
よって遮断されるとともに、ベレット3には試験回路部
に導通されるリード5を介して所定の動作信号が人力さ
れて動作状態とされる。
Next, the external light irradiated to the pellet 3 is blocked by the light shielding curtain 10, and a predetermined operating signal is manually applied to the pellet 3 via the lead 5 which is electrically connected to the test circuit section, so that the pellet 3 is brought into an operating state. .

この時ベレット3に形成された半導体集積回路の一部に
、たとえばゲート破壊やラッチアップなどの故障個所が
存在する場合、これらの故障個所には異常電流などに起
因する熱が発生され、ベレット3の他の正常な部分より
も温度が上昇される。
At this time, if a part of the semiconductor integrated circuit formed on the pellet 3 has a faulty part such as gate destruction or latch-up, heat due to abnormal current is generated at these faulty parts, and the pellet 3 The temperature is raised above other normal parts of the body.

本実施例では、上記のような動作状態にあるベレット3
の像は光学レンズ7によって所定の倍率に拡大された後
、被写体であるベレット3の温度分布によってベレット
3の像を認識する赤外線カメラ8およびこの赤外線カメ
ラ8に接続される表示部9によって観察され、ベレット
3における温度分布からベレット3に形成された半導体
集積回路の故障個所が迅速に特定される。
In this embodiment, the bellet 3 in the above operating state is
The image is magnified to a predetermined magnification by an optical lens 7, and then observed by an infrared camera 8 that recognizes the image of the pellet 3 based on the temperature distribution of the subject, the pellet 3, and a display unit 9 connected to the infrared camera 8. , the failure location of the semiconductor integrated circuit formed in the pellet 3 can be quickly identified from the temperature distribution in the pellet 3.

このように、ベレット3に形成された半導体集積回路に
おけるゲート破壊やラッチアンプなどの発熱を伴う故障
個所が、ベレット3の温度分布を検知することによって
ペレット3の像を認識する赤外線カメラ8によって観察
されるため迅速にペレット3の故障個所が特定でき、ペ
レット3の動作状態における検査作業が迅速化される。
In this way, failures such as gate breakdown and heat generation in the semiconductor integrated circuit formed in the pellet 3, such as in the latch amplifier, can be observed by the infrared camera 8, which recognizes the image of the pellet 3 by detecting the temperature distribution of the pellet 3. Therefore, the failure location of the pellet 3 can be quickly identified, and inspection work on the operating state of the pellet 3 can be speeded up.

また、ペレット3に、たとえば液晶などの異物を塗布す
るなどの操作が不用であるため、ペレット3の電気的な
特性などが塗布された異物の経時的な変化に起因して変
化され、ペレット3の故障個所の検査の再現性が低下さ
れることが回避され、再現性の良い検査結果を得ること
ができる。
In addition, since it is not necessary to apply a foreign substance such as liquid crystal to the pellet 3, the electrical characteristics of the pellet 3 may change due to changes over time of the applied foreign substance, and the pellet 3 This prevents the reproducibility of the inspection of the failed location from being reduced, and it is possible to obtain inspection results with good reproducibility.

そして、上記のようにして迅速に特定されたペレット3
の故障個所は、さらに光学顕微鏡(図示せず)などによ
ってさらに詳細な検査が行われ、故障発生の原因究明な
どが行われる。
Then, pellet 3 was quickly identified as described above.
A more detailed inspection is performed on the failure location using an optical microscope (not shown) to determine the cause of the failure.

C効果コ (1)、被検査物の検査に赤外線カメラが用いられるた
め、被検査物における発熱を伴う故障個所が迅速に発見
でき、被検査物の検査が迅速化される。
Effect C (1): Since an infrared camera is used to inspect the object to be inspected, a faulty part that causes heat generation in the object to be inspected can be quickly found, and the inspection of the object to be inspected can be speeded up.

(2)、前記(11の結果、被検査物に、たとえば液晶
などの異物を塗布するなどの操作が不用であるため、被
検査物の電気的な特性などが塗布された異物の経時的な
変化に起因して変化され、被検査物の故障個所の検査の
再現性が低下されることが回避でき、再現性の良い検査
結果を得ることが可能となる。
(2) As a result of (11) above, it is not necessary to apply a foreign substance such as liquid crystal to the object to be inspected, so the electrical characteristics of the object to be inspected may change over time. It is possible to avoid deterioration in the reproducibility of the inspection of a faulty part of the object to be inspected due to changes, and it is possible to obtain inspection results with good reproducibility.

(3)、前記fl)、 (21の結果、半導体装置の故
障解析が迅速化され、半導体装置の研究開発期間が短縮
でき、半導体装置の製造における生産性が向上される。
(3), above fl), (As a result of (21), failure analysis of semiconductor devices can be speeded up, the research and development period for semiconductor devices can be shortened, and productivity in manufacturing semiconductor devices can be improved.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、被検査物としては、ペレットに限らず、ウェ
ハに形成された半導体回路素子をプローバにて動作状態
にして行う検査に適用することも可能である。
For example, the object to be inspected is not limited to pellets, but the present invention can also be applied to inspections in which semiconductor circuit elements formed on wafers are brought into an operating state with a prober.

[利用分野] 以上の説明では主として本発明者によってなされた発明
をその前景となった利用分野である半導体集積回路素子
の検査に適用した場合について説明したが、それに限定
されるものではなく、異常個所が発熱を伴うような被検
査物の検査に広く適用できる。
[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the field of application of the invention, which is the inspection of semiconductor integrated circuit devices, but the invention is not limited to this. It can be widely applied to the inspection of objects to be inspected whose parts generate heat.

【図面の簡単な説明】 第1図は、本発明の一実施例である検査装置の説明図で
ある。 1・・・検査ステージ、2・・・ソケットボード、3・
・・ペレット(被検査物)、4・・・バフケージベース
、5・・・リード、6・・・ボンディングワイヤ、7・
・・光学レンズ、8・・・赤外線カメラ、9・・・表示
部、10・・・遮光幕。 第  1  図
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory diagram of an inspection apparatus that is an embodiment of the present invention. 1... Inspection stage, 2... Socket board, 3.
... Pellet (test object), 4... Buff cage base, 5... Lead, 6... Bonding wire, 7...
...Optical lens, 8...Infrared camera, 9...Display section, 10...Shading curtain. Figure 1

Claims (1)

【特許請求の範囲】 1、被検査物の検査に赤外線カメラを用いることを特徴
とする検査装置。 2、前記被検査物が、動作状態にある半導体集積回路素
子であることを特徴とする特許請求の範囲第1項記載の
検査装置。
[Scope of Claims] 1. An inspection device characterized in that an infrared camera is used to inspect an object to be inspected. 2. The inspection apparatus according to claim 1, wherein the object to be inspected is a semiconductor integrated circuit element in an operating state.
JP60103738A 1985-05-17 1985-05-17 Inspecting device Pending JPS61263235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60103738A JPS61263235A (en) 1985-05-17 1985-05-17 Inspecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60103738A JPS61263235A (en) 1985-05-17 1985-05-17 Inspecting device

Publications (1)

Publication Number Publication Date
JPS61263235A true JPS61263235A (en) 1986-11-21

Family

ID=14361963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60103738A Pending JPS61263235A (en) 1985-05-17 1985-05-17 Inspecting device

Country Status (1)

Country Link
JP (1) JPS61263235A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345702A2 (en) * 1988-06-08 1989-12-13 Siemens Aktiengesellschaft Process for investigating the latch-up extension in CMOS circuits
US5012100A (en) * 1988-06-08 1991-04-30 Siemens Aktiengesellschaft Method and apparatus for investigating the latch-up propagation in complementary-metal-oxide semiconductor (CMOS) circuits
EP0618455A2 (en) * 1993-03-30 1994-10-05 AT&T Corp. Method of making and testing a semiconductor device
EP0635883A2 (en) * 1993-07-19 1995-01-25 Hamamatsu Photonics K.K. Semiconductor device inspection system
EP0653626A1 (en) * 1993-11-16 1995-05-17 Hamamatsu Photonics K.K. Semiconductor device inspection system
US6002792A (en) * 1993-11-16 1999-12-14 Hamamatsu Photonics Kk Semiconductor device inspection system
JP2013134156A (en) * 2011-12-27 2013-07-08 Mitsubishi Electric Corp Apparatus and method for inspecting insulation defect of semiconductor module
JP2014089105A (en) * 2012-10-30 2014-05-15 Mitsubishi Electric Corp Evaluation device and method of evaluating semiconductor element

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0345702A2 (en) * 1988-06-08 1989-12-13 Siemens Aktiengesellschaft Process for investigating the latch-up extension in CMOS circuits
US5012100A (en) * 1988-06-08 1991-04-30 Siemens Aktiengesellschaft Method and apparatus for investigating the latch-up propagation in complementary-metal-oxide semiconductor (CMOS) circuits
US5030829A (en) * 1988-06-08 1991-07-09 Siemens Aktiengesellschaft Method and apparatus for investigating latch-up propagation in complementary-metal-oxide-semiconductor (CMOS) circuits
EP0618455A2 (en) * 1993-03-30 1994-10-05 AT&T Corp. Method of making and testing a semiconductor device
EP0618455A3 (en) * 1993-03-30 1996-09-11 At & T Corp Method of making and testing a semiconductor device.
EP0635883A2 (en) * 1993-07-19 1995-01-25 Hamamatsu Photonics K.K. Semiconductor device inspection system
EP0635883A3 (en) * 1993-07-19 1995-09-20 Hamamatsu Photonics Kk Semiconductor device inspection system.
US5532607A (en) * 1993-07-19 1996-07-02 Hamamatsu Photonics K.K. Semiconductor device inspection system involving superimposition of image data for detecting flaws in the semiconductor device
EP0653626A1 (en) * 1993-11-16 1995-05-17 Hamamatsu Photonics K.K. Semiconductor device inspection system
US6002792A (en) * 1993-11-16 1999-12-14 Hamamatsu Photonics Kk Semiconductor device inspection system
JP2013134156A (en) * 2011-12-27 2013-07-08 Mitsubishi Electric Corp Apparatus and method for inspecting insulation defect of semiconductor module
JP2014089105A (en) * 2012-10-30 2014-05-15 Mitsubishi Electric Corp Evaluation device and method of evaluating semiconductor element

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