JPS61256348A - Energy sensitive resin - Google Patents

Energy sensitive resin

Info

Publication number
JPS61256348A
JPS61256348A JP9912785A JP9912785A JPS61256348A JP S61256348 A JPS61256348 A JP S61256348A JP 9912785 A JP9912785 A JP 9912785A JP 9912785 A JP9912785 A JP 9912785A JP S61256348 A JPS61256348 A JP S61256348A
Authority
JP
Japan
Prior art keywords
soln
resin
sensitive resin
energy
energy sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9912785A
Other languages
Japanese (ja)
Other versions
JPH0584514B2 (en
Inventor
Yasuo Iida
康夫 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9912785A priority Critical patent/JPS61256348A/en
Publication of JPS61256348A publication Critical patent/JPS61256348A/en
Publication of JPH0584514B2 publication Critical patent/JPH0584514B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/72Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)

Abstract

PURPOSE:To obtain a resin advantageous for using high energy rays by using a mixture of an alkali-soluble resin and nitrocellulose for an energy sensitive resin. CONSTITUTION:The mixture of an alkali-soluble resin and nitrocellulose is used for the energy sensitive resin, and, for example, the energy sensitive resin soln. is prepared by placing o-t-butylphenol, o-cresol, and an aq. soln. of formaldehyde into a flask, adding an aq. soln. of HCl as a catalyst into it to cause reaction, reprecipitating the reaction product with water to give a white solid, dissolving the obtained alkali-soluble novolak resin of o-t-butylphenol-o-cresol- formaldehyde into ethyl cellosolve acetate to obtain a soln. [1], on the other hand, dissolving N-contg. nitrocellulose paper into amyl acetate, and mixing this soln. with the soln. [1] in a ratio of 1:1.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体素子の製造プロセス等に用いられるエネ
ルギー感応性樹脂液、特に電子線、X線、イオンビーム
等の高エネルギー線による露光に用いるエネルギー感応
性樹脂、いわゆるレジストに関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an energy-sensitive resin liquid used in the manufacturing process of semiconductor devices, particularly for exposure with high-energy beams such as electron beams, X-rays, and ion beams. It relates to energy sensitive resins, so-called resists.

〔従来技術〕[Prior art]

現在、電子線、X線、イオンビーム等の高エネルギー線
による露光に用いるポジ型レジストとしては、ノボラッ
ク樹脂を本体としエネルギー感応基としてナフトキノン
ジアジドやポリメチルペンテンスルフォンを添加したも
のが、感度及び判造プロセス性の点で優れ、よく用いら
れている。
Currently, positive resists used for exposure with high-energy beams such as electron beams, It has excellent manufacturing processability and is often used.

例えば、半導体素子製造の場合、レジスト材料を塗布し
たあと、前記エネルギー線を選択的に照射し、所望の場
所のエネルギー感応基を分解、その部分の現像液に対す
る溶解度を変化し、不要部分を選択的に除去して、所望
のレジストパターンを形成する。その後、このレジスト
パターンを用いて、下地基板の所望加工を行う。
For example, in the case of semiconductor device manufacturing, after applying a resist material, the energy rays are selectively irradiated to decompose the energy-sensitive groups at desired locations, change the solubility of the regions in the developing solution, and select unnecessary regions. and then remove the resist pattern to form a desired resist pattern. Thereafter, using this resist pattern, desired processing of the base substrate is performed.

〔従来技術の問題点〕[Problems with conventional technology]

従来、電子線に代表される高エネルギー線圧対するポジ
型感応材としてはクレゾール−ホルムアルデヒド系のノ
ボラック樹脂とキノンジアジド化合物あるいは2−メチ
ルペンテン−1−スルフォンの混合物を用いてきた。特
に後者はエム・ジー−・ボーデン(M、 J、 Bow
den)等がジャーナル・オフ・エレクトロケミカル・
ソサエティー(Journal of Blectro
−chemical 5ociety)の第128巻、
第2号のページ1304から1313で1981年6月
に述べているように前者の感度20μC/cdK対して
5μC/iと感度に優れており、日立化成社のレイキャ
スト−5000のように、多用されている。
Conventionally, a mixture of a cresol-formaldehyde-based novolak resin and a quinonediazide compound or 2-methylpentene-1-sulfone has been used as a positive sensitive material for high-energy beam pressures typified by electron beams. Especially the latter is M.J. Bowden.
den) et al. in the Journal of Electrochemical
Society (Journal of Blectro
-Chemical 5ociety) Volume 128,
As stated in June 1981 on pages 1304 to 1313 of issue 2, it has superior sensitivity of 5 μC/i compared to the former's sensitivity of 20 μC/cdK, and is widely used, such as Hitachi Chemical's Raycast-5000. has been done.

しかしながら2−メチルペンテン−1−スルフォンの感
応機構に関するシツピング機構がエネルギー線照射時の
雰囲気による影響を受けやすく、後者に比して微細パタ
ーン部分に、しげしげ残渣として残存するという問題が
あった。
However, the shipping mechanism related to the 2-methylpentene-1-sulfone sensitivity mechanism is more susceptible to the influence of the atmosphere during energy ray irradiation, and compared to the latter, there is a problem in that the shipping mechanism remains in the fine pattern portion as a staining residue.

〔発明の目的〕[Purpose of the invention]

本発明は、上記の問題を解決するために々されたもので
あり、高エネルギー線を用いるのに有利なエネルギー感
応性樹脂を提供するものである。
The present invention has been made to solve the above problems, and provides an energy-sensitive resin that is advantageous for use with high-energy rays.

〔発明の構成〕[Structure of the invention]

本発明のエネルギー感応性樹脂はアルカリ可溶である樹
脂とニトロセルロースの混合物より構成されるエネルギ
ー感応性樹脂である。
The energy-sensitive resin of the present invention is an energy-sensitive resin composed of a mixture of an alkali-soluble resin and nitrocellulose.

〔構成の詳細な説明〕[Detailed explanation of the configuration]

半導体素子等の作製のためのリソグラフィー技術におい
て、高エネルギー線を用いることは、高解像度を得る上
で非常に有効な事である。その実用化において、高感度
で耐ドライエツチング性の高い、エネルギー感応性樹脂
液、いわゆるレジストの開発は欠く事のでき力い条件で
ある。
BACKGROUND ART In lithography techniques for manufacturing semiconductor devices, the use of high-energy rays is very effective in obtaining high resolution. For its practical application, the development of energy-sensitive resin liquids, so-called resists, with high sensitivity and high dry etching resistance is an essential prerequisite.

一方、レジストの耐ドライエツチング性が増加すると、
微小々残渣でも、エツチング加工工程に影響を与えるこ
とになる。
On the other hand, as the dry etching resistance of the resist increases,
Even minute residues can affect the etching process.

本発明者は鋭意研究を進めた結果、エネルギー感応基と
してニトロセルロース系化合物を用いると、分解生成物
がCo、 、 N、等のガス状であるため、残渣分が少
く、かつ感度及び耐ドライエツチング性の要求も満足で
きる事がわかった。
As a result of intensive research, the present inventor has found that when a nitrocellulose compound is used as an energy-sensitive group, the decomposition products are gaseous such as Co, , N, etc., so the residual content is small and the sensitivity and dry resistance are improved. It was found that the requirements for etching properties were also satisfied.

(実施例1) オルト(ターシャルブチル)フェノール5F。(Example 1) Ortho (tertiary butyl) phenol 5F.

オルトクレゾール4fiおよび35チホルムアルデヒド
水溶液5.8Iをフラスコに入れ、35%塩酸水溶液を
触媒としてO,8g加えて、120℃で1時間反応させ
た。その後、反応物を水で再沈殿させて5Iの白色固体
を得た。得られたオルト(ターシャルブチル)フェノー
ル−オルトクレゾール−ホルムアルデヒドより成るノボ
ラック樹脂ハNMRより構造全確認した。
4fi of orthocresol and 5.8 I of an aqueous solution of 35 thiformaldehyde were placed in a flask, 8 g of O was added with a 35% aqueous solution of hydrochloric acid as a catalyst, and the mixture was reacted at 120° C. for 1 hour. Thereafter, the reaction product was reprecipitated with water to obtain 5I as a white solid. The entire structure of the obtained novolac resin consisting of ortho(tert-butyl)phenol-orthocresol-formaldehyde was confirmed by NMR.

NMR(核磁気共鳴スペクトル)   (CD−C13
中)δ(ppm) : 1.33         (
c(CHJ3)2.13         (−CH3
)3、 s c)         (−CH2−)6
.67〜7.0     (@−T()組成比:オルト
(ターシャルブチル)フェノール0.53 /オルトクレゾール 0.47 この樹脂ヲエチルセルソルブアセテートに溶かして20
チの溶液(1〕とした。一方15チの窒素含料を有する
ニトロセルツース紙を酢酸アミルに溶解し5チ溶液を作
成し、溶液〔1〕と等量混合し、エネルギー感応性樹脂
液とI−た。
NMR (Nuclear Magnetic Resonance Spectrum) (CD-C13
Medium) δ (ppm): 1.33 (
c(CHJ3)2.13 (-CH3
)3, sc) (-CH2-)6
.. 67-7.0 (@-T() composition ratio: ortho (tert-butyl) phenol 0.53 / ortho-cresol 0.47 Dissolve this resin in ethyl cellosolve acetate and add 20
On the other hand, nitroceltooth paper containing 15 nitrogen was dissolved in amyl acetate to prepare a 5 nitrogen solution, which was mixed in equal amounts with solution [1] to form an energy-sensitive resin solution. and I-ta.

この溶液をシリコンウエノ・−にスピン塗布して80℃
で30分間焼きしめ、厚さeoooiのレジスト膜を得
た。
Spin coat this solution onto silicone ueno-- and heat it to 80°C.
The resist film was baked for 30 minutes to obtain a resist film having a thickness of eoooi.

電子線照射後、0.3規定の水酸化す) I)ラム水溶
液で現像したところ第1図に示したように5μC〃の感
度で0.5ミクロンのパターンを解像し、残渣は従来品
に比較し、大幅に減少した。又耐ドライエツチング性は
、現在一般に用すられているフォトレジスト、例えばシ
ラプレー社のAz−2400と同程度であった。
After electron beam irradiation, 0.3 N hydroxide) I) When developed with a ram aqueous solution, a 0.5 micron pattern was resolved with a sensitivity of 5 μC as shown in Figure 1, and the residue was similar to that of the conventional product. significantly decreased compared to . Furthermore, the dry etching resistance was comparable to that of currently commonly used photoresists, such as Az-2400 manufactured by Silapray.

アルカリ可溶性樹脂としては、他にオルトフーニルフ為
ノールeオルトクレゾール−ホルムアルデヒドやポリヒ
ドロキシスチレンを用いてもよい結果が得られる。
As the alkali-soluble resin, good results can also be obtained by using ortho-cresol-formaldehyde or polyhydroxystyrene.

〔発明の効果〕〔Effect of the invention〕

以上、述べてきたように、本発明のエネルギー感応性樹
脂は現像後の残渣がきわめて少く、かつ感度も高いこと
がわかった。従って本発明であるポジレジスト材料及び
これを使用するパターン形成方法は半導体素子等の製造
プロセスに有用なものである。
As described above, it has been found that the energy-sensitive resin of the present invention leaves very little residue after development and has high sensitivity. Therefore, the positive resist material of the present invention and the pattern forming method using the same are useful in the manufacturing process of semiconductor devices and the like.

【図面の簡単な説明】[Brief explanation of drawings]

Claims (1)

【特許請求の範囲】[Claims] アルカリ可溶である樹脂とニトロセルロースの混合物よ
りなるエネルギー感応性樹脂。
Energy-sensitive resin consisting of a mixture of alkali-soluble resin and nitrocellulose.
JP9912785A 1985-05-10 1985-05-10 Energy sensitive resin Granted JPS61256348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9912785A JPS61256348A (en) 1985-05-10 1985-05-10 Energy sensitive resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9912785A JPS61256348A (en) 1985-05-10 1985-05-10 Energy sensitive resin

Publications (2)

Publication Number Publication Date
JPS61256348A true JPS61256348A (en) 1986-11-13
JPH0584514B2 JPH0584514B2 (en) 1993-12-02

Family

ID=14239088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9912785A Granted JPS61256348A (en) 1985-05-10 1985-05-10 Energy sensitive resin

Country Status (1)

Country Link
JP (1) JPS61256348A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184640A (en) * 1974-12-20 1976-07-24 Ibm

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184640A (en) * 1974-12-20 1976-07-24 Ibm

Also Published As

Publication number Publication date
JPH0584514B2 (en) 1993-12-02

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