JPS6123895Y2 - - Google Patents

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Publication number
JPS6123895Y2
JPS6123895Y2 JP14274478U JP14274478U JPS6123895Y2 JP S6123895 Y2 JPS6123895 Y2 JP S6123895Y2 JP 14274478 U JP14274478 U JP 14274478U JP 14274478 U JP14274478 U JP 14274478U JP S6123895 Y2 JPS6123895 Y2 JP S6123895Y2
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JP
Japan
Prior art keywords
circuit
resistor
voltage
transistor
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14274478U
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Japanese (ja)
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JPS5559592U (en
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Priority to JP14274478U priority Critical patent/JPS6123895Y2/ja
Publication of JPS5559592U publication Critical patent/JPS5559592U/ja
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Description

【考案の詳細な説明】 本考案はテレビジヨン受像機等において陰極線
管に加わる高電圧が何等かの原因で異常に上昇し
た場合に発生する放射線の放射を防止する異常高
電圧発生防止回路に係り、特に高電圧回路電流に
よつて生じる誤動作を防止する異常高電圧発生防
止回路に関する。
[Detailed description of the invention] The present invention relates to an abnormal high voltage generation prevention circuit that prevents radiation from being emitted when the high voltage applied to the cathode ray tube of a television receiver or the like increases abnormally for some reason. In particular, the present invention relates to an abnormal high voltage generation prevention circuit that prevents malfunctions caused by high voltage circuit current.

一般にテレビジヨン受像機等の陰極線管には高
電圧が印加されるが、この高電圧が規定値以上と
なる人体に有害な放射線(所謂X線)が発生す
る。このため機器の動作上高電圧発生を必要とす
るテレビジヨン受像機等においては放射線の発生
を防止するという意味からも異常高電圧発生防止
回路を設けてある。しかし乍ら、従来の異常高電
圧発生防止回路は次に説明するように規定電圧以
下でも作動し機器の正常な動作が損われる難点を
有する。
Generally, a high voltage is applied to a cathode ray tube such as a television receiver, and when this high voltage exceeds a specified value, radiation (so-called X-rays) harmful to the human body is generated. For this reason, in television receivers and the like that require high voltage generation for the operation of the equipment, abnormal high voltage generation prevention circuits are provided in order to prevent the generation of radiation. However, as will be explained below, conventional abnormal high voltage generation prevention circuits have the disadvantage that they operate even when the voltage is lower than a specified voltage, impairing the normal operation of the equipment.

第1図は従来の異常高電圧発生防止回路を示す
回路図であり、1次巻線2に水平出力パルスが供
給されるフライバツクトランス1はその2次巻線
3の1端に高圧整流ダイオード4を介して陰極線
管5の陽極に高電圧を供給し、その3次巻線6の
1端は接地され他端はダイオード7、コンデンサ
8により形成される整流回路に接続されている。
そして前記コンデンサ8と並列に抵抗9,10と
でなる直列回路が接続され、前記抵抗9,10の
接続点はトランジスタQ1のエミツタのバイアス
電位を供給する。このトランジスタQ1のベース
と前記ダイオード7間には抵抗11が接続される
とともに更に前記トランジスタQ1のベースと基
準電位間にはツエナーダイオード12と抵抗13
の直列回路が接続され、抵抗13には並列にコン
デンサ14が接続されている。前記トランジスタ
Q1のコレクタは抵抗15を介して基準電位に接
続され、抵抗15の端子電圧の変化はスイツチン
グ回路16を動作させこのスイツチング回路16
のスイツチング作用により水平発振回路40の発
振を停止し異常高電圧の発生を抑える。また、前
記フライバツクトランス1の2次巻線3の他端は
コンデンサ17を介して基準電位に接続され、こ
のコンデンサ17の1端と前記抵抗13の1端間
には抵抗18が接続されている。更に、前記2次
巻線3の1端とビデオ回路19間には抵抗20,
21,22の直列回路が接続される。更に、抵抗
20,21の接続点と電源E2間には抵抗23
が、前記抵抗21,22の接続点と電源E1間に
はダイオード24が接続される。
FIG. 1 is a circuit diagram showing a conventional abnormal high voltage generation prevention circuit, in which a flyback transformer 1 whose primary winding 2 is supplied with horizontal output pulses has a high voltage rectifier diode at one end of its secondary winding 3. A high voltage is supplied to the anode of the cathode ray tube 5 through the tertiary winding 4, and one end of the tertiary winding 6 is grounded and the other end is connected to a rectifier circuit formed by a diode 7 and a capacitor 8.
A series circuit consisting of resistors 9 and 10 is connected in parallel with the capacitor 8, and a connection point between the resistors 9 and 10 supplies a bias potential to the emitter of the transistor Q1 . A resistor 11 is connected between the base of the transistor Q1 and the diode 7, and a Zener diode 12 and a resistor 13 are connected between the base of the transistor Q1 and the reference potential.
A series circuit is connected to the resistor 13, and a capacitor 14 is connected in parallel to the resistor 13. the transistor
The collector of Q 1 is connected to the reference potential via a resistor 15, and a change in the terminal voltage of the resistor 15 operates a switching circuit 16.
The switching action stops the oscillation of the horizontal oscillation circuit 40 and suppresses the generation of abnormally high voltage. The other end of the secondary winding 3 of the flyback transformer 1 is connected to a reference potential via a capacitor 17, and a resistor 18 is connected between one end of the capacitor 17 and one end of the resistor 13. There is. Furthermore, a resistor 20 is connected between one end of the secondary winding 3 and the video circuit 19.
21 and 22 series circuits are connected. Furthermore, a resistor 23 is connected between the connection point of resistors 20 and 21 and the power supply E2 .
However, a diode 24 is connected between the connection point of the resistors 21 and 22 and the power source E1 .

以上記載した構成の従来の異常高電圧発生防止
回路では、何等かの原因で異常な高圧が発生する
と、この異常高電圧は3次巻線6によつて検出さ
れこれをダイオード7とコンデンサ8により整流
した電圧がダイオード7のカソード側に電圧EA
として現われ、この電圧EAを分圧した抵抗9,
10の接続点の電位EBがツエナーダイオード1
2のツエナー電圧に抵抗13の端子電圧ECを加
えた電圧よりも高くなると、トランジスタQ1
導通すると、抵抗15に電流が流れこの抵抗15
で発生する電圧によりスイツチング回路16が駆
動され、水平発振回路40での水平発振を停止さ
せ高圧発生に寄与するパルスの発生を停止させて
異常高電圧の発生を抑止する。
In the conventional abnormal high voltage generation prevention circuit configured as described above, when abnormal high voltage is generated for some reason, this abnormal high voltage is detected by the tertiary winding 6 and is detected by the diode 7 and capacitor 8. The rectified voltage is applied to the cathode side of diode 7 as voltage E A
appears as a resistor 9, which divides this voltage E A ,
The potential E B at the connection point of 10 is Zener diode 1
When the voltage becomes higher than the sum of the Zener voltage of 2 and the terminal voltage E of the resistor 13, the transistor Q1 becomes conductive, and current flows through the resistor 15.
The switching circuit 16 is driven by the voltage generated in the horizontal oscillation circuit 40, and the horizontal oscillation in the horizontal oscillation circuit 40 is stopped, and the generation of pulses contributing to the generation of high voltage is stopped, thereby suppressing the generation of abnormally high voltage.

また、ツエナーダイオード12のアノード側の
電位ECは自動輝度制限作用をするのに利用され
る。即ち、前記トランジスタQ1が導通するまで
はツエナーダイオード12のアノード電圧EC
第2図の特性曲線に示す様に単調に減少する
が、陰極線管5のビーム電流がIa1を越え前記ト
ランジスタQ1が導通すると急激に減少する。こ
れにより、ダイオード24のアノードに加わる電
圧も急激に減少しダイオード24が遮断し、この
遮断により抵抗21は電源E1との接続が断たれ
実効的なインピーダンスは大となる。このように
ダイオード24の遮断でビデオ回路19の入力端
側のインピーダンスが大きくなりビーム電流が制
限されABL動作が行なわれる。このようにし
て、異常高圧発生防止とはABL動作とが行なわ
れる訳であるが、放射線の発生はビーム電流が大
きいほど発生電圧が低いので、放射線の発生を防
ぐ為にする異常高電圧の検出も前述の様にビーム
電流に対して第2図の特性曲線に示す特性で検
出を行う。
Further, the potential E C on the anode side of the Zener diode 12 is used for automatic brightness limiting. That is, until the transistor Q 1 becomes conductive, the anode voltage E C of the Zener diode 12 decreases monotonically as shown in the characteristic curve of FIG. 2, but when the beam current of the cathode ray tube 5 exceeds Ia 1 When 1 becomes conductive, it decreases rapidly. As a result, the voltage applied to the anode of the diode 24 also decreases rapidly and the diode 24 is cut off. Due to this cut-off, the resistor 21 is disconnected from the power source E1 , and its effective impedance becomes large. In this way, by blocking the diode 24, the impedance on the input end side of the video circuit 19 increases, the beam current is limited, and the ABL operation is performed. In this way, the ABL operation is performed to prevent the generation of abnormal high voltage, but since the larger the beam current, the lower the generated voltage, the detection of abnormal high voltage is done to prevent the generation of radiation. As described above, the beam current is detected using the characteristics shown in the characteristic curve of FIG.

この様な従来の異常高電圧発生防止回路では第
2図でビーム電流がIa2までは正常に動作する
が、ビーム電流がIa2を越えると、異常高電圧と
して検出する電圧がABL動作の為の検出電圧よ
りも低くなり、ABL動作によりビーム電流を制
御し得る状態であつても、水平発振回路40の動
作を停止する(異常高電圧発生を防止する)作用
の方が先行するため、水平発振の停止に伴ない高
圧発生機能が失なわれ受像機としての動作が停止
する。このとき、受像機の電源を一担遮断し、再
度電源を投入すればビーム電流がIa2よりも小さ
い値で正常動作をなす。
As shown in Figure 2, this conventional abnormal high voltage generation prevention circuit operates normally until the beam current reaches Ia 2 , but when the beam current exceeds Ia 2 , the voltage detected as an abnormal high voltage is due to ABL operation. Even if the detection voltage is lower than the detected voltage of As the oscillation stops, the high voltage generation function is lost and the receiver stops functioning. At this time, if the power to the receiver is cut off and then turned on again, the beam current will operate normally with a value smaller than Ia 2 .

このように、従来の異常高電圧発生防止回路で
は、その検出電圧がビーム電流値がIa1を越える
と急激にさがり、ABL動作電圧よりも下がると
誤動作を生じる。この結果、輝度調整の際にビー
ム電流が変化すると不要に水平発振を停止するな
どの支障をきたす。
As described above, in the conventional abnormal high voltage generation prevention circuit, its detection voltage drops rapidly when the beam current value exceeds Ia 1 , and malfunctions occur when it falls below the ABL operating voltage. As a result, if the beam current changes during brightness adjustment, problems such as unnecessarily stopping horizontal oscillation occur.

本考案は、上記難点を解消するものであり、輝
度調整等によりビーム電流を変化させた場合にお
いても異常高電圧発生の為の検出電圧を適宜設定
し、輝度調整(ビーム電流の変化)による異常高
電圧発生防止の誤動作を防止することを目的とす
る。
The present invention solves the above-mentioned difficulties, and even when the beam current is changed due to brightness adjustment, etc., the detection voltage for abnormally high voltage generation is set appropriately, and the abnormality due to brightness adjustment (change in beam current) is set appropriately. The purpose is to prevent malfunction of high voltage generation prevention.

以下、本考案の代表的実施例を図面を参照して
説明する。
Hereinafter, typical embodiments of the present invention will be described with reference to the drawings.

第3図は、本考案の代表的一実施例を示す回路
図であり、第1図と同一部分は同一符号を付して
あり、その動作については説明を省略する。ツエ
ナーダイオード12のアノードとコンデンサ17
の一端間には抵抗25,26が直列に接続され、
この抵抗25と26の接続点と基準電位間にはダ
イオード27と抵抗28の直列回路が介在接続さ
れている。
FIG. 3 is a circuit diagram showing a typical embodiment of the present invention, and the same parts as in FIG. 1 are given the same reference numerals, and the explanation of their operation will be omitted. Anode of Zener diode 12 and capacitor 17
Resistors 25 and 26 are connected in series between one end of the
A series circuit of a diode 27 and a resistor 28 is interposed and connected between the connection point of the resistors 25 and 26 and the reference potential.

いま、ビーム電流が増大した場合を考えると、
第2図でも説明したがビーム電流の増加に伴いツ
エナーダイオード12のアノードに接続された抵
抗13の端子電圧ECは第4図の特性曲線で示
す様に減少する。ビーム電流の増加に伴い、ビー
ム電流がIa1では、前述と従来例と同様トランジ
スタQ1は導通する。そして、第4図特性曲線で
示すようにABL動作に供する検出電圧ECはビー
ム電流がIa1より増加すると、トランジスタQ1
導通により急に減少するが、ビーム電流が更に増
加しIa2になるとダイオード27が導通する。こ
のダイオード27の導通によつて抵抗28が抵抗
25,26の接続点と基準電位間に接続されるこ
とにより、抵抗25,26からトランジスタQ1
側をみたインピーダンスの低下を抑止する。この
為、ビーム電流が増加してIa2になるとダイオー
ド27が導通し、第4図の特性曲線で示す様
に、ビーム電流がIa2よりも増加してもABL動作
に供する検出電圧ECの急激な減少を補償して、
ABL電圧の検出電圧が過度に減少することによ
る異常高電圧発生防止動作の誤動作を防止するこ
とができる。即ち、ABL動作よりも、過度に異
常高電圧発生動作が先行し、不要に受像機の動作
を停止するという誤動作を防止する。尚、第4図
中、ビーム電流Ia2を越える領域における特性曲
線の傾斜は、抵抗28の値を変えることにより
図中2つの破線で示す領域内で任意に変え得る。
Now, considering the case where the beam current increases,
As explained in FIG. 2, as the beam current increases, the terminal voltage E C of the resistor 13 connected to the anode of the Zener diode 12 decreases as shown by the characteristic curve in FIG. 4. As the beam current increases, when the beam current is Ia 1 , the transistor Q 1 becomes conductive as described above and in the conventional example. As shown in the characteristic curve in Figure 4, the detection voltage E C used for ABL operation suddenly decreases when the beam current increases from Ia 1 due to the conduction of transistor Q 1 , but as the beam current increases further and reaches Ia 2 . Then, the diode 27 becomes conductive. Due to the conduction of this diode 27, the resistor 28 is connected between the connection point of the resistors 25 and 26 and the reference potential, so that the transistor Q 1 is connected from the resistors 25 and 26
Prevents the impedance from decreasing when viewed from the side. Therefore, when the beam current increases to Ia 2 , the diode 27 becomes conductive, and as shown in the characteristic curve in Figure 4, even if the beam current increases beyond Ia 2 , the detection voltage E C used for ABL operation remains constant. To compensate for the sudden decline,
It is possible to prevent malfunction of the abnormal high voltage generation prevention operation due to an excessive decrease in the detection voltage of the ABL voltage. That is, this prevents a malfunction in which the abnormally high voltage generation operation excessively precedes the ABL operation and unnecessarily stops the operation of the receiver. Incidentally, in FIG. 4, the slope of the characteristic curve in the region exceeding the beam current Ia 2 can be arbitrarily changed within the region indicated by two broken lines in the figure by changing the value of the resistor 28.

第5図は本考案の他の代表的実施例を示す図で
あり、第3図と同一の回路構成をなす部分には同
一の符号を付してあり、その説明は省略する。
FIG. 5 is a diagram showing another typical embodiment of the present invention, in which parts having the same circuit configuration as in FIG. 3 are given the same reference numerals, and their explanation will be omitted.

前述の様に、ビーム電流が増加すると、トラン
ジスタQ1が導通しABL動作に供する検出電圧EC
が低下する。この検出電圧ECの低下に伴ない異
常電圧発生防止の為の検出電圧も低下して、不要
に水平発振回路40の動作を停止せしめ受像機の
正常な機能が阻害される。本実施例では、ツエナ
ーダイオード12のアノードとコンデンサ17の
一端間に抵抗29,30を接続し、更に抵抗29
と並列にダイオード31をカソード側が前記抵抗
29と30の接続点側に接続される様に接続す
る。このような回路構成とすることにより、通常
導通状態にあるダイオード31は、ビーム電流が
増化してビーム電流がIa2になると(第4図中で
ビーム電流がIa2になつたとき。)、前記ダイオー
ド31は逆バイアス状態となり遮断する。このダ
イオード31の遮断によりコンデンサ17の一端
からトランジスタQ1側を見たインピーダンスは
大きくなり抵抗30を介して陰極線管5に流れる
ビーム電流は減少する。これにより、前述の第4
図の特性曲線で示した特性、即ち、ビーム電流
が増加した場合においても、ABL動作に供する
検出電圧が過度に低下することを防止すると共に
不要な異常高電圧発生防止の動作をさせることな
く必要外に水平発振回路40の動作を停止するこ
とを防止する。尚、第3図、5図では、ABL動
作は、ダイオード24をスイツチングすることに
より行なわれる。
As mentioned above, when the beam current increases, the transistor Q 1 conducts and the detection voltage E C for ABL operation increases.
decreases. As the detection voltage E C decreases, the detection voltage for preventing abnormal voltage generation also decreases, causing the horizontal oscillation circuit 40 to stop operating unnecessarily, thereby impeding the normal functioning of the receiver. In this embodiment, resistors 29 and 30 are connected between the anode of the Zener diode 12 and one end of the capacitor 17, and a resistor 29 is connected between the anode of the Zener diode 12 and one end of the capacitor 17.
A diode 31 is connected in parallel with the resistors 29 and 30 so that its cathode side is connected to the connection point between the resistors 29 and 30. By having such a circuit configuration, the diode 31, which is normally in a conductive state, will be able to operate when the beam current increases and reaches Ia 2 (when the beam current reaches Ia 2 in Fig. 4). The diode 31 becomes reverse biased and shut off. By cutting off the diode 31, the impedance seen from one end of the capacitor 17 toward the transistor Q1 increases, and the beam current flowing into the cathode ray tube 5 through the resistor 30 decreases. As a result, the fourth
The characteristics shown in the characteristic curve in the figure, that is, even when the beam current increases, the detection voltage used for ABL operation is prevented from dropping excessively, and the unnecessary abnormal high voltage generation prevention operation is not performed. This prevents the operation of the horizontal oscillation circuit 40 from being stopped inadvertently. Note that in FIGS. 3 and 5, the ABL operation is performed by switching the diode 24.

以上の記載の様に、本考案においては、従来発
生していたABL動作の為の検出電圧がビーム電
流の増加に伴い低下することにより、異常高電圧
発生防止回路の動作がABL動作に先行して動作
し必要外に水平発振回路を停止してしまうという
誤動作を確実に防止し得るものである。このた
め、水平発振回路動作をスイツチング回路によつ
て制御する異常高電圧発生防止作用と、ビーム電
流量を制御するABL動作を確実に両立させる効
果を奏する。
As described above, in the present invention, the detection voltage for ABL operation that conventionally occurs decreases as the beam current increases, so that the abnormal high voltage generation prevention circuit operates in advance of ABL operation. This makes it possible to reliably prevent malfunctions in which the horizontal oscillation circuit is stopped unnecessarily. Therefore, it is possible to reliably achieve both the abnormal high voltage generation prevention effect of controlling the horizontal oscillation circuit operation by the switching circuit and the ABL operation of controlling the amount of beam current.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の異常高電圧発生防止回路を示す
回路図、第2図は第1図の回路を説明するに供す
る特性図、第3図及び第5図は夫々本考案の実施
例を示す回路図、第4図は本考案の動作を説明す
るに供する特性図である。 1……フライバツクトランス、3……2次巻線
(出力)、5……陰極線管、6……3次巻線(検
出)、9,10……分圧回路用抵抗、Q1……トラ
ンジスタ、12,13,14……バイアス回路を
構成するツエナーダイオード、抵抗、コンデン
サ、15……負荷抵抗、16……第1のスイツチ
ング回路、19……ビデオ回路、25,29……
第1のインピーダンス用抵抗、26,30……第
2のインピーダンス用抵抗、20,21,22,
23,24……自動輝度制限回路、27,28,
31……第2のスイツチング回路。
Fig. 1 is a circuit diagram showing a conventional abnormal high voltage generation prevention circuit, Fig. 2 is a characteristic diagram for explaining the circuit of Fig. 1, and Figs. 3 and 5 each show an embodiment of the present invention. The circuit diagram and FIG. 4 are characteristic diagrams for explaining the operation of the present invention. 1... Flyback transformer, 3... Secondary winding (output), 5... Cathode ray tube, 6... Tertiary winding (detection), 9, 10... Resistor for voltage divider circuit, Q 1 ... Transistor, 12, 13, 14... Zener diode, resistor, capacitor constituting the bias circuit, 15... Load resistor, 16... First switching circuit, 19... Video circuit, 25, 29...
First impedance resistor, 26, 30... Second impedance resistor, 20, 21, 22,
23, 24... automatic brightness limiting circuit, 27, 28,
31...Second switching circuit.

Claims (1)

【実用新案登録請求の範囲】 陰極線管のビーム電流量に応じた電圧を発生す
るフライバツクトランスの検出巻線と、 検出巻線によつて得られる検出電圧を分圧する
分圧回路と、 この分圧回路の分圧電圧に応じて導通を制御さ
れるトランジスタと、 このトランジスタの負荷と水平発振回路間に介
在し、前記トランジスタの導通に呼応してスイツ
チングをし前記水平発振回路の発振動作を停止さ
せ異常高電圧の発生を防止する第1のスイツチン
グ回路と、 前記トランジスタのバイアス回路とフライバツ
クトランスの出力巻線間に直列に接続された第1
及び第2の抵抗と、 前記第1の抵抗とビデオ回路の入力側に接続さ
れ前記バイアス回路の電位変動に応じてビデオ回
路入力側のインピーダンスを変えてビーム電流量
を制御する自動輝度制限回路と、 前記第1の抵抗及び第2の抵抗の接続点に一端
を、他端が所定電位点に接続され、前記第1及び
第2の抵抗の総合インピーダンス値を実効的に変
える少なくともスイツチングダイオードを有する
第2のスイツチング回路とを具備したことを特徴
とする異常高電圧発生防止回路。
[Scope of Claim for Utility Model Registration] A detection winding of a flyback transformer that generates a voltage according to the amount of beam current of a cathode ray tube, a voltage divider circuit that divides the detection voltage obtained by the detection winding, and this component. a transistor whose conduction is controlled according to the divided voltage of the voltage circuit; and a transistor which is interposed between the load of this transistor and the horizontal oscillation circuit, and switches in response to the conduction of the transistor to stop the oscillation operation of the horizontal oscillation circuit. a first switching circuit configured to prevent abnormally high voltage from occurring; and a first switching circuit connected in series between the bias circuit of the transistor and the output winding of the flyback transformer.
and a second resistor; and an automatic brightness limiting circuit that is connected to the first resistor and the input side of the video circuit and controls the amount of beam current by changing the impedance on the input side of the video circuit in accordance with potential fluctuations of the bias circuit. , at least a switching diode, which has one end connected to the connection point of the first resistor and the second resistor and the other end connected to a predetermined potential point, and which effectively changes the total impedance value of the first and second resistors. What is claimed is: 1. An abnormal high voltage generation prevention circuit comprising: a second switching circuit having a second switching circuit;
JP14274478U 1978-10-19 1978-10-19 Expired JPS6123895Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14274478U JPS6123895Y2 (en) 1978-10-19 1978-10-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14274478U JPS6123895Y2 (en) 1978-10-19 1978-10-19

Publications (2)

Publication Number Publication Date
JPS5559592U JPS5559592U (en) 1980-04-23
JPS6123895Y2 true JPS6123895Y2 (en) 1986-07-17

Family

ID=29119774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14274478U Expired JPS6123895Y2 (en) 1978-10-19 1978-10-19

Country Status (1)

Country Link
JP (1) JPS6123895Y2 (en)

Also Published As

Publication number Publication date
JPS5559592U (en) 1980-04-23

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