JPS61220515A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPS61220515A
JPS61220515A JP6241085A JP6241085A JPS61220515A JP S61220515 A JPS61220515 A JP S61220515A JP 6241085 A JP6241085 A JP 6241085A JP 6241085 A JP6241085 A JP 6241085A JP S61220515 A JPS61220515 A JP S61220515A
Authority
JP
Japan
Prior art keywords
space
acoustic wave
surface acoustic
grating
grating reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6241085A
Other languages
Japanese (ja)
Other versions
JPH0815247B2 (en
Inventor
Taiji Yamamoto
泰司 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP6241085A priority Critical patent/JPH0815247B2/en
Publication of JPS61220515A publication Critical patent/JPS61220515A/en
Publication of JPH0815247B2 publication Critical patent/JPH0815247B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate the need for a duplicated exposure process and to obtain a desired reflecting characteristic by changing periodically a pitch width between a line and a space of a grating reflector. CONSTITUTION:A space 13 having a different pitch is inserted between a string 11 and a string 12 having the same pitch of the line 14 and the space 15 of the grating reflector. In taking the combination of the lines and spaces as one section, the grating reflector consists of lots of the sections. In the section, the strings 11 and 12 are composed in terms of vectors by the space 13 at the center so as to move the center frequency of the reflecting characteristic. Thus, as the lines and spaces of the grating reflectors 22 and 23, the same width of the lines and spaces of an interdigital electrode 24 and the duplicated exposure process is not required.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は圧電基板上に交叉指状電極およびグレーティン
グ反射器を有する弾性表面波装置に関し、特許、グレー
ティングのラインとスペースのピッチ幅を周期的に変化
させることによジ所望の反射特性會得るようにした弾性
表面波装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a surface acoustic wave device having interdigital electrodes and a grating reflector on a piezoelectric substrate, and the present invention relates to a surface acoustic wave device having interdigitated electrodes and a grating reflector on a piezoelectric substrate. The present invention relates to a surface acoustic wave device in which a desired reflection characteristic can be obtained by changing the characteristics of the surface acoustic wave.

〔従来の技術〕[Conventional technology]

従来のグレーティング反射器を用いた弾性表面波装置と
して弾性表面波共振子が実用化されている。この弾性表
面波共振子を高性能化する技術として、交叉指状電極の
電極周期ピッチに対しグレーティング反射器の電極周期
ピッチ全わずかに大きくする構成が、例えは、TUno
等の論文“Optimization of quar
tz SAW resorator 5truatur
e with groove gratings”、 
IBEB+i’rausvol 、5U−29,46、
p29(J(1982)に提案されている。
A surface acoustic wave resonator has been put into practical use as a surface acoustic wave device using a conventional grating reflector. As a technique for improving the performance of this surface acoustic wave resonator, a configuration in which the entire electrode periodic pitch of the grating reflector is slightly larger than the electrode periodic pitch of the interdigital electrodes is used, for example, in TUno.
The paper “Optimization of quar
tz SAW resorator 5truatur
e with groove gratings”,
IBEB+i'rausvol, 5U-29,46,
p29 (J (1982)).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このような従来構成の弾性表面波共振子のフォトマスク
製造においては、グレーティング反射器と交叉指状電極
との間で微妙な寸法差を出す必要があり、非常に高精度
が要求され、製造が難しいという欠点がある。詳細に述
べると、高精度のフォトマスフケ作る場合、通常、電子
ビーム露光を用いるが、このプロセスにはパターンテー
タ會必要とするためパターン寸法は量子化され、この結
果、まるめ誤差を生じる。これ介避けるために通常は微
妙な寸法差を必要とするパターン全それぞれ縮小率金変
えて二重露光することにより寸法のわず力)な違い金山
している。しかしながらこのプロセスでは、二重露光す
るため、各パターンの位置に誤差が生じる。また、二重
露光するため、所要時間も長くなり、必然的にフォトマ
スクの価格は上昇してし1つ。
In the production of photomasks for surface acoustic wave resonators with conventional configurations, it is necessary to create subtle dimensional differences between the grating reflector and the interdigital electrodes, which requires extremely high precision and requires manufacturing time. It has the disadvantage of being difficult. Specifically, when producing high-precision photomass flakes, electron beam exposure is usually used, but this process requires a pattern tater, so the pattern dimensions are quantized, resulting in rounding errors. In order to avoid this, the patterns that normally require slight dimensional differences are double-exposed with different reduction ratios for each pattern, thereby achieving very large dimensional differences. However, in this process, due to double exposure, errors occur in the position of each pattern. Additionally, since double exposure is required, the time required increases, which inevitably increases the price of the photomask.

〔問題点′(+:梢決するための手段〕本発明の目的は
上述の欠点全除去した弾性表面波装置全提供することに
ある。
[Problem '(+: Means for solving the problem)] The object of the present invention is to provide a surface acoustic wave device in which all of the above-mentioned drawbacks are eliminated.

本発明の弾性表面波装置は、圧電基板上に交叉指状電極
およびグレーティング反射器を有する弾性表面彼装酋に
おいて、予め定めfc数だけ隔てたラインまたはスペー
ス毎に隣接のラインまたはスペースの幅と異なる幅全有
するラインtwitニスペースを配置しである。
In the surface acoustic wave device of the present invention, in an elastic surface acoustic wave device having interdigital electrodes and a grating reflector on a piezoelectric substrate, each line or space separated by a predetermined number of fc has a width equal to that of an adjacent line or space. Lines with different widths are placed between spaces.

〔実施例〕〔Example〕

次に本発明について図面全参照して詳細に説明する。 Next, the present invention will be explained in detail with reference to all the drawings.

第1図は本発明の一実施例Tを29、グレーティング反
射器の一部を示す図て゛ある。不実施例においては、ラ
イン14とスペース15との同一ピッチの周期列11と
周期列12との間にピッチの異なるスペース13が介在
している。第1図に示すグレーティングを1区間とする
とグレーティング反射器はこの1区間を多数並べて構成
される。この1区間は、中央のスペース13により周期
列11および12がベクトル合成され、反射特性の中心
周波数をknかすことか可能となる。
FIG. 1 shows an embodiment of the present invention T29, showing a part of a grating reflector. In the non-embodiment, spaces 13 having a different pitch are interposed between the periodic rows 11 and 12 of the same pitch of lines 14 and spaces 15. Assuming that the grating shown in FIG. 1 is one section, the grating reflector is constructed by arranging a large number of this one section. In this one section, the periodic sequences 11 and 12 are vector-synthesized by the central space 13, and it is possible to reduce the center frequency of the reflection characteristics.

第2図は本発明の弾性光7i7I波装置を示す。圧電基
板21上のグレーティング反射器22および23のライ
ンおよびスペースは、交叉指状電極24のラインおよび
スペースと同一寸法の幅も使用して見かけの周期ピッチ
全交叉指状電極24のそれとは異ならせている。
FIG. 2 shows an elastic optical 7i7I wave device of the present invention. The lines and spaces of the grating reflectors 22 and 23 on the piezoelectric substrate 21 are made different from that of the apparent periodic pitch full interdigital electrode 24 by also using a width of the same dimensions as the lines and spaces of the interdigital electrode 24. ing.

今、基板の材料をSTカット水晶とし、グレーティング
反射器全アルミ膜で形成し、このアルミ膜の膜厚しλ−
1,6(%)とし、ストップバンドの中心周波数fof
 100(MIloo(および1(OT″lz)近傍の
2種類としたときのグレーティング反射器の各電極の周
期LVCおける反射特性を第3図および第4図に示す。
Now, the substrate material is ST-cut crystal, the grating reflector is made of an all-aluminum film, and the thickness of this aluminum film is λ-
1,6 (%), and the center frequency of the stop band fof
FIGS. 3 and 4 show the reflection characteristics at the period LVC of each electrode of the grating reflector when there are two types near 100 (MIloo) (and 1 (OT″lz)).

第3図は従来の等間隔周期のブレチイングミ極を用いた
場合と本発明のグレーティング電1tir用いた場合と
金示す特性図である。従来の場合の周期La k 20
.1 (μm) 、 本発明の場合の周期Lb i20
.0(μm)および20.5(μm)の組合せとし、グ
レーティング電極の敷金100本とした1図から明らか
なように両者の特性は完全に一致した。
FIG. 3 is a characteristic diagram illustrating the case where conventional breeching electrodes with equal intervals are used and the case where the grating electrode of the present invention is used. Conventional period La k 20
.. 1 (μm), period Lb i20 in the case of the present invention
.. 0 (μm) and 20.5 (μm), and 100 pads were used for the grating electrode.As is clear from FIG. 1, the characteristics of the two completely matched.

第4図は第3図の条件とグレーティング電極の数を除い
て同じに選んだときの特性を示す。ここでは、電極の数
を500本とした。この場合にも従来の場合と本発明の
場合とは特性が完全に一致した。
FIG. 4 shows the characteristics when the conditions of FIG. 3 and the number of grating electrodes are the same except for the number of grating electrodes. Here, the number of electrodes was 500. In this case as well, the characteristics of the conventional case and the case of the present invention completely matched.

〔発明の効果〕〔Effect of the invention〕

以上、本発明には、反射特性の中心周波数の移動を達成
でき、特に、交叉指状電極の周期ピッチと同一ピッチを
用いて反射特性の中心周波数全格動できるため従来の技
術に用いた二重露光工程が不要で、高精度かつ短時間に
低価格での製造が達成でき、さらに、高Qの特性が得ら
れるという効果がある。
As described above, in the present invention, the center frequency of the reflection characteristic can be shifted, and in particular, the center frequency of the reflection characteristic can be shifted all the way using the same pitch as the periodic pitch of the interdigital electrodes. It does not require a heavy exposure process, can be manufactured with high precision, in a short time, and at low cost, and has the advantage of providing high Q characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のグレーティング反射器の1区間を示す
平面図、第2図は本発明の一実施例を示す平面図、第3
図および第4図は本発明の装置の反射特性を示す図であ
る。 11.12・・・グレーティング、13・・・スペース
、21・・・圧電基板、22.23・・・グレーティン
グ反射器、24 ・交叉指状電極。
FIG. 1 is a plan view showing one section of the grating reflector of the present invention, FIG. 2 is a plan view showing an embodiment of the present invention, and FIG.
FIG. 4 and FIG. 4 are diagrams showing the reflection characteristics of the device of the present invention. 11.12... Grating, 13... Space, 21... Piezoelectric substrate, 22.23... Grating reflector, 24 - Cross-finger electrode.

Claims (1)

【特許請求の範囲】[Claims] 圧電基板上に交叉指状電極およびグレーティング反射器
を有する弾性表面波装置において、予め定めた数だけ隔
てたラインまたはスペース毎に隣接のラインまたはスペ
ースの幅と異なる幅を有するラインまたはスペースを配
置した前記グレーティング反射器を設けたことを特徴と
する弾性表面波装置。
In a surface acoustic wave device having interdigitated electrodes and a grating reflector on a piezoelectric substrate, a line or space having a width different from the width of an adjacent line or space is arranged for each line or space separated by a predetermined number. A surface acoustic wave device comprising the grating reflector.
JP6241085A 1985-03-27 1985-03-27 Surface acoustic wave device Expired - Lifetime JPH0815247B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6241085A JPH0815247B2 (en) 1985-03-27 1985-03-27 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6241085A JPH0815247B2 (en) 1985-03-27 1985-03-27 Surface acoustic wave device

Publications (2)

Publication Number Publication Date
JPS61220515A true JPS61220515A (en) 1986-09-30
JPH0815247B2 JPH0815247B2 (en) 1996-02-14

Family

ID=13199345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6241085A Expired - Lifetime JPH0815247B2 (en) 1985-03-27 1985-03-27 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH0815247B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084917B2 (en) 2008-10-24 2011-12-27 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module device
US8299680B2 (en) 2008-10-24 2012-10-30 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
US8344815B2 (en) 2008-10-24 2013-01-01 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
US8358177B2 (en) 2008-10-24 2013-01-22 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084917B2 (en) 2008-10-24 2011-12-27 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module device
US8299680B2 (en) 2008-10-24 2012-10-30 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
US8344815B2 (en) 2008-10-24 2013-01-01 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
US8358177B2 (en) 2008-10-24 2013-01-22 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
US8736140B2 (en) 2008-10-24 2014-05-27 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module device
US8742861B2 (en) 2008-10-24 2014-06-03 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit
US8803625B2 (en) 2008-10-24 2014-08-12 Seiko Epson Corporation Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit

Also Published As

Publication number Publication date
JPH0815247B2 (en) 1996-02-14

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