JPS61201510A - Semi-fixed delay line - Google Patents
Semi-fixed delay lineInfo
- Publication number
- JPS61201510A JPS61201510A JP4219485A JP4219485A JPS61201510A JP S61201510 A JPS61201510 A JP S61201510A JP 4219485 A JP4219485 A JP 4219485A JP 4219485 A JP4219485 A JP 4219485A JP S61201510 A JPS61201510 A JP S61201510A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- dielectric constant
- niobium
- projection
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は遅延線に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to delay lines.
(従来技術とその問題点)
電子回路が正常に動作するためには、回路中の種々の信
号間の微妙な時間関係が正確に設定されていなければな
らない。特に、高速動作の要求される論理回路ではこの
ような設定ができなければ、高速動作の実現が困難にな
る。(Prior art and its problems) In order for an electronic circuit to operate normally, delicate time relationships among various signals in the circuit must be set accurately. In particular, in logic circuits that require high-speed operation, if such settings cannot be made, it will be difficult to achieve high-speed operation.
遅延線は入力された信号が出力されるまでの遅延時間を
細かく調整することができるので、このような設定に用
いられる。A delay line is used for such settings because it allows fine adjustment of the delay time until the input signal is output.
第2図は従来の遅延線の構造を示す図である。FIG. 2 is a diagram showing the structure of a conventional delay line.
これは、分布定数形の遅延線で、これの単位長さ当りの
遅延時間は、/Fで与えられる。L及びCは単位長当り
のインダクタンス及びキャパシタンスである。単位長さ
当りのLを大きくするためにコア7の上にエナメル線1
0が密に巻かれている。This is a distributed constant type delay line, and its delay time per unit length is given by /F. L and C are inductance and capacitance per unit length. Enameled wire 1 is placed on top of core 7 to increase L per unit length.
0 is tightly wound.
このエナメル線10の上に絶縁層9があり、さらに、こ
の上に外部導体8がある。(別所著、「記憶装置工」、
共立出版、昭和44年、第176頁)。On this enamelled wire 10 there is an insulating layer 9, and further on this there is an outer conductor 8. (Written by Bessho, “Memory device engineering”,
Kyoritsu Shuppan, 1962, p. 176).
この遅延線は回路間の信号伝ばん時間を調整するために
、プリン+−S板上に実装されて、使用される。使用時
、外部導体8は接地される。This delay line is mounted on the printed +-S board and used to adjust the signal propagation time between circuits. In use, the outer conductor 8 is grounded.
最近のモノリシックICでは、ますます多くの回路部品
を集積化する傾向にあり、プリント基板上に遅延線を含
んで構成されていた回路が1個のICとして集積化され
ている。このようなICでは、高速動作を実現するため
に、IC内での信号遅延の調整が必要である。特に超高
速動作を目指す超伝導論理回路等では、この調整が重要
である。In recent monolithic ICs, there is a tendency to integrate more and more circuit components, and circuits that were configured on a printed circuit board including delay lines are now integrated as a single IC. In such an IC, in order to realize high-speed operation, it is necessary to adjust the signal delay within the IC. This adjustment is especially important in superconducting logic circuits that aim for ultra-high-speed operation.
しかし、従来の第2図に示すような遅延線は集積化が困
難なため、また、遅延時間の変更が困難なために、この
ようなIC内に用いることができない7、
(発明の目的)
本発明の目的は、超伝導論理回路等の超高速論理と共に
集積でき、集積化された後、遅延時間の調整が容易にで
きる半固定遅延線を提供することにある。However, the conventional delay line shown in FIG. 2 cannot be used in such an IC because it is difficult to integrate and it is difficult to change the delay time7. (Objective of the Invention) An object of the present invention is to provide a semi-fixed delay line that can be integrated with ultra high-speed logic such as a superconducting logic circuit and whose delay time can be easily adjusted after integration.
(発明の構成)
本発明は、基板上に積層される接地板と、この上に積層
される誘電率の相異なる2つ以上の絶縁層と、これ等2
つ以上の絶縁層の上にまたがって積層される線路とを備
えて成る半固定遅延線である。(Structure of the Invention) The present invention includes a grounding plate laminated on a substrate, two or more insulating layers having different dielectric constants laminated thereon, and two or more insulating layers having different dielectric constants.
A semi-fixed delay line comprising a line stacked over two or more insulating layers.
(構成の詳細な説明) 以下に図面を用いて本発明の詳細な説明を行う。(Detailed explanation of configuration) The present invention will be described in detail below using the drawings.
第1図は本発明の一例を示し、同図(a)は平面図、同
図(b)は第1図(al中のA−A’部分の断面図であ
る。FIG. 1 shows an example of the present invention, and FIG. 1(a) is a plan view, and FIG. 1(b) is a sectional view taken along the line AA' in FIG. 1 (al).
シリコン基板6の上の接地板5は、真空蒸着、スパッタ
リング等の薄膜形成技術により形成されたニオブ(Nb
)等の超伝導体である。この接地板5の上には、絶縁層
を挟んで、側面に形状変更の容易な突起4を持つ線路1
が形成される。この突起4や線路1も、ニオブ(Nb)
等の超伝導体の薄膜で、真空蒸着、エツチング等の薄膜
形成技術を用いて作られる。この突起4と接地板5の間
の第2絶縁層2は、5酸化ニオブ(Nb、0.)やチタ
ン酸ストロンチウム(SrTiO=)等誘電′率の比較
的大きな材料で形成される。線路1と接地板5の間の第
1絶縁層3は、第2絶縁層2を形成する材料よりも誘電
率の小さい酸化シリコン(870,840,)やポリエ
チレン(−CH,CH,−)等の材料で形成される。こ
のように第1絶縁層3の一部に第2絶縁層2が埋められ
た構造を作るには、す7トオフプロセス等、種々の手段
がある。The ground plate 5 on the silicon substrate 6 is made of niobium (Nb) formed by thin film forming techniques such as vacuum evaporation and sputtering.
) and other superconductors. On this ground plate 5, with an insulating layer in between, a line 1 having protrusions 4 whose shape can be easily changed on the side surface is placed.
is formed. This protrusion 4 and the line 1 are also made of niobium (Nb).
It is a thin film of a superconductor such as, and is made using thin film formation techniques such as vacuum evaporation and etching. The second insulating layer 2 between the protrusion 4 and the ground plate 5 is formed of a material with a relatively large dielectric constant, such as niobium pentoxide (Nb, 0.) or strontium titanate (SrTiO=). The first insulating layer 3 between the line 1 and the grounding plate 5 is made of silicon oxide (870, 840,), polyethylene (-CH, CH, -), etc., which has a lower dielectric constant than the material forming the second insulating layer 2. made of materials. To create a structure in which the second insulating layer 2 is partially buried in the first insulating layer 3 as described above, there are various methods such as a step-off process.
(実施例)
このような構成の遅延線は、入力された信号を八Qで定
まる遅延時間の後に出力する。但し、lは遅延線の長さ
、μは絶縁層の透磁率、εは絶縁層の実効的な誘電率で
ある。線路の幅をXい突起の幅をX7、線路部分の第1
絶縁層3の誘電率をε1、突起部分の第2絶縁層2の誘
電率を6.とすれば、実効的な誘電率εは
ε=(ε+x1+ttxt)/(Xt+xt)になる。(Embodiment) A delay line having such a configuration outputs an input signal after a delay time determined by 8Q. Here, l is the length of the delay line, μ is the magnetic permeability of the insulating layer, and ε is the effective dielectric constant of the insulating layer. The width of the track is X, the width of the protrusion is X7, the first part of the track part
The dielectric constant of the insulating layer 3 is ε1, and the dielectric constant of the second insulating layer 2 at the protruding portion is 6. Then, the effective dielectric constant ε is ε=(ε+x1+ttxt)/(Xt+xt).
なお、透磁率μはほぼ真空中の透磁率と同じで、4 x
X l O(henry/m )である。Note that the magnetic permeability μ is almost the same as the magnetic permeability in vacuum, and is 4 x
X l O(henry/m ).
第1絶縁層3として誘電率ε、が30.lX10 ”(
farad/fn)の2酸化シリコン(SiOl)を用
いると、線路部分での単位長さI当りの信号遅延時間は
6.1 s X 10− ’ (m/m)になる。The first insulating layer 3 has a dielectric constant ε of 30. lX10” (
farad/fn), the signal delay time per unit length I in the line portion is 6.1 s x 10-' (m/m).
第2絶縁層2として誘電率ε、が凹4X10 ’(fa
rad/m )のチタン酸ストロンチウムを用い、線路
1の幅を5X10−’(m) 、突起4の幅を5×1
0 ’ (m)とすれば、!=1485X10−12(
farad/rrI)となり、信号遅延時間は43.2
X10 ” (see/m)になる。この遅延線
の長さiを100XIO’(m)tcすれば
、4.32X10−”(g!c)の信号遅延時間を生じ
させることができる。The second insulating layer 2 has a dielectric constant ε of 4×10′ (fa
rad/m), the width of the track 1 is 5 x 10-' (m), and the width of the protrusion 4 is 5 x 1.
0' (m), then! =1485X10-12(
farad/rrI), and the signal delay time is 43.2
X10” (see/m).This delay line
If the length i is 100XIO' (m)tc, a signal delay time of 4.32X10-'' (g!c) can be generated.
突起4の幅X、をレーザートリフ −(Laser T
rirrmer)で削ることにより、実効誘電率εを変
更することができる。したがって、高速論理回路の動作
に必要な遅延時間の設定が容易に達成される。The width X of the protrusion 4 is laser trifled.
The effective dielectric constant ε can be changed by cutting the material with Therefore, setting the delay time necessary for the operation of the high-speed logic circuit can be easily achieved.
(発明の効果)
以上に記述したように、本発明によれば、超伝導集積回
路と一緒に集積化することが容易で、且つ、遅延時間の
調整が可能な超伝導半固定遅延線を提供することができ
る。(Effects of the Invention) As described above, the present invention provides a superconducting semi-fixed delay line which can be easily integrated together with a superconducting integrated circuit and whose delay time can be adjusted. can do.
なお、以上の説明においては突起4の付いた線路1を用
いた場合について述べたが、突起の無い線路でも第1、
第2誘電体の接する境界を線路の下に配置し、線路の一
方の側面をへこませるようにしてトリミングして実効誘
電率を変える事で、半固定遅延線が同様に得られる。In addition, in the above explanation, the case where the track 1 with the protrusion 4 was used was described, but the first,
A semi-fixed delay line can similarly be obtained by placing the contacting boundary of the second dielectric under the line and trimming one side of the line in a concave manner to change the effective dielectric constant.
また、以上の説明においては超伝導論理回路に用い、線
路や接地板が超伝導体の場合について述べたが、化合物
半導体などその他の高速論理回路に用いても、普通の導
体を線路や接地板に用いても、半固定遅延線の効果が得
られる。In addition, although the above explanation deals with the case where superconductors are used in superconducting logic circuits and the lines and ground planes are superconductors, ordinary conductors can also be used in other high-speed logic circuits such as compound semiconductors as lines and ground planes. The effect of a semi-fixed delay line can be obtained even when used in
第1図(al 、 (blは本発明の一実施例の説明図
、第2図は従来遅延線の説明図である。
図中
1、・・線路、2・・・第2絶縁層、3−・・第1絶縁
層、4・・・突起、5・・・接地板、6・・・基板、7
・・・コア、8・・・外部導体、9・・・絶縁層、10
・・・エナメル線である。
代理人 弁理士 内 μτ −′、
箒 1 図
(a)
(b)
−≦;二42ト蝙2:FIG. 1 (al, (bl) is an explanatory diagram of an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a conventional delay line. In the figure, 1...line, 2...second insulating layer, 3 -...first insulating layer, 4...protrusion, 5...ground plate, 6...substrate, 7
...Core, 8...Outer conductor, 9...Insulating layer, 10
...It is an enameled wire. Agent Patent attorney μτ −′, Houki 1 Figure (a) (b) −≦;242 Toto 2:
Claims (1)
上の絶縁層と、前記2つ以上の絶縁層の上にまたがって
積層される線路とを備えることを特徴とする半固定遅延
線。A semi-fixed delay characterized by comprising a grounding plate, two or more insulating layers having different dielectric constants laminated thereon, and a line laminated across the two or more insulating layers. line.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4219485A JPS61201510A (en) | 1985-03-04 | 1985-03-04 | Semi-fixed delay line |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4219485A JPS61201510A (en) | 1985-03-04 | 1985-03-04 | Semi-fixed delay line |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61201510A true JPS61201510A (en) | 1986-09-06 |
Family
ID=12629197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4219485A Pending JPS61201510A (en) | 1985-03-04 | 1985-03-04 | Semi-fixed delay line |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61201510A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121630A (en) * | 1987-07-06 | 2000-09-19 | Sumitomo Electric Industries, Ltd. | Superconducting thin film and a method for preparing the same |
-
1985
- 1985-03-04 JP JP4219485A patent/JPS61201510A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121630A (en) * | 1987-07-06 | 2000-09-19 | Sumitomo Electric Industries, Ltd. | Superconducting thin film and a method for preparing the same |
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