JPS61198912A - Delay circuit - Google Patents

Delay circuit

Info

Publication number
JPS61198912A
JPS61198912A JP60039097A JP3909785A JPS61198912A JP S61198912 A JPS61198912 A JP S61198912A JP 60039097 A JP60039097 A JP 60039097A JP 3909785 A JP3909785 A JP 3909785A JP S61198912 A JPS61198912 A JP S61198912A
Authority
JP
Japan
Prior art keywords
circuit
input
resistor
variable capacitance
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60039097A
Other languages
Japanese (ja)
Other versions
JPH0815254B2 (en
Inventor
Yoichi Kudo
洋一 工藤
Junichi Fujimiya
藤宮 淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60039097A priority Critical patent/JPH0815254B2/en
Publication of JPS61198912A publication Critical patent/JPS61198912A/en
Publication of JPH0815254B2 publication Critical patent/JPH0815254B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To give a delay time required for a gate circuit or the like to the gate circuit by providing a circuit offering time constant change to the input and/or output of the gate circuit so as to reduce number of circuit elements. CONSTITUTION:A cathode of a diode D1 is connected to an output side of a resistor R2. A cathode of a diode D3 is connected to an output side of a resistor R6. Then the input leading/trailing time of the gate circuit G2 depends on a product between a resistance of the resistor R2 and series junction capacitance of the diodes D3, D4. The input leading/trailing time of the gate circuit G3 in the setting state of the time constant as above, the delay time from the input to the output is minimized. In changing the output voltage of a variable resistor RV1 toward 0V, the leading time and the trailing time are increased to increase the delay time between the input and output.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は可変容量ダイオードの特性を回路遅延に如何な
く取り入れた遅延回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a delay circuit that incorporates the characteristics of a variable capacitance diode into circuit delay.

ディジタル論理回路においては、そのゲート回路に適切
なタイミングで信号が入力されることが要求される。そ
のためにゲート回路には所望の遅延を生せしめる手段が
採られるのが一般である。
In digital logic circuits, signals are required to be input to the gate circuits at appropriate timings. For this purpose, means for producing a desired delay is generally employed in the gate circuit.

そして、このような手段は少ない回路構成素子数で必要
とする遅延を与え得ることが望ましい。
It is desirable that such means be able to provide the necessary delay with a small number of circuit elements.

〔従来の技術〕[Conventional technology]

従来のこの種の遅延回路としては、第2図に示すように
、ECLゲート回路の入力及び出力に、抵抗R2、コン
デンサC1及び可変容量ダイオードD2%並びに抵抗R
c、コンデンサC3及び可変容量ダイオードD4を接続
し、それらダイオードD2及びD4のアノードに可変抵
抗RV、で分圧された電圧が抵抗R3及び抵抗R4を夫
々経て供給されるように構成されている。その可変抵抗
RV 1の調整により成る程度の遅延時間の調整は可能
である。
As shown in FIG. 2, a conventional delay circuit of this type includes a resistor R2, a capacitor C1, a variable capacitance diode D2%, and a resistor R at the input and output of the ECL gate circuit.
c, a capacitor C3 and a variable capacitance diode D4 are connected, and a voltage divided by a variable resistor RV is supplied to the anodes of these diodes D2 and D4 through a resistor R3 and a resistor R4, respectively. It is possible to adjust the delay time by adjusting the variable resistor RV1.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上述手段では、必要とする遅延時間が得
られない場合に、抵抗R2、コンデンサC1及び可変容
量ダイオードD2の部分、並びに抵抗RG、コンデンサ
C3及び可変容量ダイオードD4の部分を所要段数だけ
増設することにより、その不足分を充足させる技法を採
用している。この技法では回路素子数を多くして初めて
所期の目的が達成され得る。このような回路素子数の増
加は集積回路においてはその実装密度を低下させること
になる。
However, with the above means, if the required delay time cannot be obtained, the resistor R2, capacitor C1, and variable capacitance diode D2, and the resistor RG, capacitor C3, and variable capacitance diode D4 are added by the required number of stages. By doing so, we have adopted a technique that fills the gap. In this technique, the intended purpose can only be achieved by increasing the number of circuit elements. Such an increase in the number of circuit elements reduces the packaging density of integrated circuits.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は上述の問題点の解決を図った遅延回路を提供す
るもので、その第1の手段は、入力端と出力端との間に
接続された抵抗と、可変容量ダイオード対の一方のカソ
ードを前記出力端に、他方のカソードを基準電位に接続
した可変容量ダイオード回路と、前記両可変容量ダイオ
ードのアノードにバイアス電圧を供給するバイアス電圧
供給回路とにより構成したもので、その第2の手段は第
1の手段による回路をゲート回路の入力及び/又は出力
に設けて構成したものである。
The present invention provides a delay circuit designed to solve the above-mentioned problems, and the first means thereof is to connect a resistor connected between an input end and an output end, and a cathode of one of a pair of variable capacitance diodes. and a variable capacitance diode circuit whose other cathode is connected to the output terminal and a reference potential, and a bias voltage supply circuit which supplies a bias voltage to the anodes of both the variable capacitance diodes. is constructed by providing the circuit according to the first means at the input and/or output of a gate circuit.

〔作用〕[Effect]

本発明回路によれば、バイアス電圧を適切に調整するこ
とにより、出力端側に接続された可変容量ダイオードを
逆バイアス状態(静電容量の小さい状!3)から順バイ
アス状態の方向(即ち、静電容量の増大を生じさせ、遂
には抵抗素子化させ得る方向)へ変化せしめ得るから、
時定数を大幅に変化させることができる。
According to the circuit of the present invention, by appropriately adjusting the bias voltage, the variable capacitance diode connected to the output terminal side is changed from a reverse bias state (low capacitance! 3) to a forward bias state (i.e., This can cause an increase in capacitance and eventually turn it into a resistive element.
The time constant can be changed significantly.

従って、上述のような時定数変化を呈し得る回路をゲー
ト回路の入力及び/又は出力に設けることにより、回路
素子数を少なくしてゲート回路等で必要とする遅延時間
をその回路に与えることができる。
Therefore, by providing a circuit capable of exhibiting a time constant change as described above at the input and/or output of a gate circuit, it is possible to reduce the number of circuit elements and provide the delay time required by the gate circuit etc. to the circuit. can.

〔実施例〕〔Example〕

以下、添付図面を参照しながら本発明の詳細な説明する
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

第1図は本発明の一実施例を示す。この実施例は本発明
をゲート回路に通用して構成した例を示す。この実施例
は第2図従来回路のコンデンサCI 。
FIG. 1 shows an embodiment of the invention. This embodiment shows an example in which the present invention is applied to a gate circuit. This embodiment is shown in Figure 2, which shows the conventional circuit capacitor CI.

C3を可変容量ダイオードD1.D3に変更したことに
その特徴部分がある。即ち、ダイオードD1のカソード
を抵抗R2の出力端側に接続しそのアノードをダイオー
ドD2のアノードに接続すると共に、ダイオードD3の
カソードを抵抗R9の出力端側に接続しそのアノードを
ダイオードD4のアノードに接続したことである。
C3 is a variable capacitance diode D1. The characteristic part lies in the change to D3. That is, the cathode of diode D1 is connected to the output side of resistor R2, and its anode is connected to the anode of diode D2, and the cathode of diode D3 is connected to the output side of resistor R9, and its anode is connected to the anode of diode D4. It was connected.

このように構成された回路の動作を説明する。The operation of the circuit configured in this way will be explained.

説明の都合上、可変抵抗RV、がその出力に一■が現れ
るように調整された状態にあるとすると、可変容量ダイ
オードD1乃至D4はすべて逆バイアスされてダイオー
ドD1乃至D4の接合容量は最小となる。このように設
定された状態においては、ゲート回路G2の入力立ち上
がり立ち下がり時間は抵抗R2の抵抗値とダイオードD
1及びD2の直列接合容量との積(時定数)で決り、ゲ
ート回路G3の入力立ち上がり立ち下がり時間は抵抗R
Bの抵抗値とダイオードD3及びD4の直列接合容量と
の積(時定数)で決まる。このような時定数の設定状態
においては、入力から出力までの遅延時間は最小となる
For convenience of explanation, suppose that the variable resistor RV is adjusted so that 1 appears at its output, then the variable capacitance diodes D1 to D4 are all reverse biased and the junction capacitance of the diodes D1 to D4 is minimized. Become. In this set state, the input rise and fall times of the gate circuit G2 are determined by the resistance value of the resistor R2 and the diode D.
1 and the series junction capacitance of D2 (time constant), and the input rise and fall time of the gate circuit G3 is determined by the resistor R.
It is determined by the product (time constant) of the resistance value of B and the series junction capacitance of diodes D3 and D4. In such a time constant setting state, the delay time from input to output is minimized.

このような設定状態から可変抵抗の出力電圧を0ボルト
の方へ変えていくと、ダイオードD、乃至D4の逆バイ
アス値が小さくなり、夫々の接合容量が増加する。従っ
て、上述の各時定数つまり立ち上がり時間、立ち下がり
時間が増加することとなり、入出力間の遅延時間が増加
する。
When the output voltage of the variable resistor is changed from this setting state toward 0 volts, the reverse bias values of the diodes D to D4 become smaller, and their respective junction capacitances increase. Therefore, each of the above-mentioned time constants, that is, rise time and fall time, increases, and the delay time between input and output increases.

更に、可変抵抗の出力電圧をOボルトの方へ変えていく
と、ダイオードD1及びD3のバイアス状態は逆バイア
スから順バイアスへ移っていく。
Further, as the output voltage of the variable resistor is changed toward O volts, the bias state of the diodes D1 and D3 changes from reverse bias to forward bias.

このとき、ダイオードD2.D4は逆バイアスのままで
ある。ダイオードD1及びD3が順方向にバイアスされ
ると、ゲート回路G2の入力時定数は抵抗R2の抵抗値
及びダイオードD、の順方向抵抗値の和とダイオードD
2の接合容量との積によって決まり、ゲート回路G2の
出力時定数は抵抗R6の抵抗値及びダイオードD3の順
方向抵抗値の和とダイオードD4の接合容量との積によ
って決まり、単純に2個の可変容量ダイオードを逆バイ
アスしていた場合よりも大きな時定数となる。
At this time, the diode D2. D4 remains reverse biased. When the diodes D1 and D3 are forward biased, the input time constant of the gate circuit G2 is the sum of the resistance value of the resistor R2 and the forward resistance value of the diode D, and the diode D.
The output time constant of gate circuit G2 is determined by the product of the sum of the resistance value of resistor R6 and the forward resistance value of diode D3, and the junction capacitance of diode D4, and is simply determined by the product of the junction capacitance of diode D4. The time constant is larger than when the variable capacitance diode is reverse biased.

そして、可変抵抗RV、の出力電圧を0ボルトまで変え
たとき最大の遅延時間が得られる。
The maximum delay time is obtained when the output voltage of the variable resistor RV is changed to 0 volts.

なお、上記実施例においては、抵抗R2及び可変容量ダ
イオードDI 、D2による遅延回路と抵抗R6及び可
変容量ダイオードD3、D4による遅延回路の2段構成
としているが、これは立ち上がり、立ち下がりの特性の
差を相殺させるためであり、これにより入出力間のデユ
ーティ変動を最小にして遅延時間を大きくしている。従
って、1段構成にても、要求特性を満足し得る場合には
、本発明を通用し得る。
In the above embodiment, a two-stage configuration is used, including a delay circuit including a resistor R2 and variable capacitance diodes DI and D2, and a delay circuit including a resistor R6 and variable capacitance diodes D3 and D4, but this is due to the rise and fall characteristics. This is to offset the difference, thereby minimizing duty fluctuations between input and output and increasing delay time. Therefore, if the required characteristics can be satisfied even with a one-stage configuration, the present invention can be applied.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、 ■遅延時間を大幅に変化させ得る。 As explained above, according to the present invention, ■Delay time can vary significantly.

■又、2段構成にすることにより立ち上がり、立ち下が
りの特性の差を相殺して入出力間のデユーティ変動を小
さくして遅延時間の大幅な変化を生ぜしめ得る、等の効
果が得られる。
(2) Furthermore, by adopting a two-stage configuration, it is possible to obtain effects such as canceling out differences in rise and fall characteristics, reducing duty fluctuations between input and output, and causing a significant change in delay time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す図、第2図は従来回路
を示す図である。 図において、R2、R3、R4、Rsは固定抵抗、RV
、は可変抵抗、Dl乃至D4は可変容量ダイオード、G
2はゲート回路である。
FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional circuit. In the figure, R2, R3, R4, Rs are fixed resistances, RV
, are variable resistors, Dl to D4 are variable capacitance diodes, G
2 is a gate circuit.

Claims (2)

【特許請求の範囲】[Claims] (1)入力端と出力端との間に接続された抵抗と、可変
容量ダイオード対の一方のカソードを前記出力端に、他
方のカソードを基準電位に接続した可変容量ダイオード
回路と、前記両可変容量ダイオードのアノードにバイア
ス電圧を供給するバイアス電圧供給回路とにより構成し
たことを特徴とする遅延回路。
(1) A resistor connected between an input terminal and an output terminal, a variable capacitance diode circuit in which one cathode of a pair of variable capacitance diodes is connected to the output terminal and the other cathode to a reference potential, and both of the variable capacitance diodes 1. A delay circuit comprising a bias voltage supply circuit that supplies a bias voltage to an anode of a capacitive diode.
(2)入力端とゲート回路の入力との間に接続された第
1の抵抗と、第1の可変容量ダイオード対の一方のカソ
ードを前記ゲート回路の入力に、他方のカソードを基準
電位に接続した第1の可変容量ダイオード回路と、前記
ゲート回路の出力と出力端との間に接続された第2の抵
抗と、第2の可変容量ダイオード対の一方のカソードを
前記出力端に、他方のカソードを基準電位に接続した第
2の可変容量ダイオード回路と、前記第1及び第2の可
変容量ダイオード回路の各可変容量ダイオードのアノー
ドにバイアス電圧を供給するバイアス電圧供給回路とに
より構成されたことを特徴とする遅延回路。
(2) A first resistor connected between the input terminal and the input of the gate circuit, and one cathode of the first variable capacitance diode pair connected to the input of the gate circuit, and the other cathode connected to the reference potential. a first variable capacitance diode circuit, a second resistor connected between the output of the gate circuit and the output terminal, and a second variable capacitance diode pair, with one cathode connected to the output terminal and the other connected to the output terminal. A second variable capacitance diode circuit whose cathode is connected to a reference potential, and a bias voltage supply circuit that supplies a bias voltage to the anode of each variable capacitance diode of the first and second variable capacitance diode circuits. A delay circuit featuring:
JP60039097A 1985-02-28 1985-02-28 Delay circuit Expired - Lifetime JPH0815254B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60039097A JPH0815254B2 (en) 1985-02-28 1985-02-28 Delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60039097A JPH0815254B2 (en) 1985-02-28 1985-02-28 Delay circuit

Publications (2)

Publication Number Publication Date
JPS61198912A true JPS61198912A (en) 1986-09-03
JPH0815254B2 JPH0815254B2 (en) 1996-02-14

Family

ID=12543572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60039097A Expired - Lifetime JPH0815254B2 (en) 1985-02-28 1985-02-28 Delay circuit

Country Status (1)

Country Link
JP (1) JPH0815254B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720621B1 (en) 1999-11-12 2004-04-13 Sharp Kabushiki Kaisha SOI semiconductor device with resistor body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687923A (en) * 1979-12-19 1981-07-17 Fujitsu Ltd Delay adjusting circuit
JPS5922436A (en) * 1982-07-28 1984-02-04 Hitachi Ltd Variable delay circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687923A (en) * 1979-12-19 1981-07-17 Fujitsu Ltd Delay adjusting circuit
JPS5922436A (en) * 1982-07-28 1984-02-04 Hitachi Ltd Variable delay circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720621B1 (en) 1999-11-12 2004-04-13 Sharp Kabushiki Kaisha SOI semiconductor device with resistor body

Also Published As

Publication number Publication date
JPH0815254B2 (en) 1996-02-14

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