JPS611910B2 - - Google Patents

Info

Publication number
JPS611910B2
JPS611910B2 JP51155292A JP15529276A JPS611910B2 JP S611910 B2 JPS611910 B2 JP S611910B2 JP 51155292 A JP51155292 A JP 51155292A JP 15529276 A JP15529276 A JP 15529276A JP S611910 B2 JPS611910 B2 JP S611910B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51155292A
Other languages
Japanese (ja)
Other versions
JPS5378784A (en
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15529276A priority Critical patent/JPS5378784A/ja
Publication of JPS5378784A publication Critical patent/JPS5378784A/ja
Publication of JPS611910B2 publication Critical patent/JPS611910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15529276A 1976-12-23 1976-12-23 Semiconductor device Granted JPS5378784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15529276A JPS5378784A (en) 1976-12-23 1976-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15529276A JPS5378784A (en) 1976-12-23 1976-12-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5378784A JPS5378784A (en) 1978-07-12
JPS611910B2 true JPS611910B2 (cs) 1986-01-21

Family

ID=15602695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15529276A Granted JPS5378784A (en) 1976-12-23 1976-12-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378784A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3174500D1 (en) * 1980-05-20 1986-06-05 Toshiba Kk Semiconductor device

Also Published As

Publication number Publication date
JPS5378784A (en) 1978-07-12

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