JPS61189281U - - Google Patents
Info
- Publication number
- JPS61189281U JPS61189281U JP7280085U JP7280085U JPS61189281U JP S61189281 U JPS61189281 U JP S61189281U JP 7280085 U JP7280085 U JP 7280085U JP 7280085 U JP7280085 U JP 7280085U JP S61189281 U JPS61189281 U JP S61189281U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- damper
- exhaust port
- intake port
- burn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000007599 discharging Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第1図は本考案の実施例を示すバーンイン装置
の概略構成図、第2図は従来のバーンイン装置の
構成図、第3図は第2図中のバーンインボードの
斜視図、第4図は第1図の動作を説明するための
バーンイン装置の構成図である。
10…筐体、12…チヤンバ、13…ダクト、
14…送風機、15…ヒータ、17…ダンパ、1
8…吸気口、19…排気口。
FIG. 1 is a schematic diagram of a burn-in device showing an embodiment of the present invention, FIG. 2 is a diagram of a conventional burn-in device, FIG. 3 is a perspective view of the burn-in board in FIG. 2 is a configuration diagram of a burn-in device for explaining the operation of FIG. 1. FIG. 10... Housing, 12... Chamber, 13... Duct,
14...Blower, 15...Heater, 17...Damper, 1
8...Intake port, 19...Exhaust port.
Claims (1)
用のヒータ15と、このヒータ15で加熱された
空気を循環させる送風機14とを備え、前記チヤ
ンバ12内に収納される半導体装置6を高温雰囲
気下で動作試験を行なうようにした半導体装置の
バーンイン装置において、 前記送風機14で形成される熱風循環流路へ冷
気を導入する吸気口18と、 前記熱風循環流路を流れる熱風を外部へ排出す
る排気口19と、 前記吸気口18及び排気口19を開閉するダン
パ17と、 前記半導体装置6の試験終了時に前記ヒータ1
5をオフ状態にすると共に前記ダンパ17を開状
態に切換え制御する制御装置20とを設けたこと
を特徴とする半導体装置のバーンイン装置。[Claims for Utility Model Registration] A semiconductor device 6 is housed in the chamber 12 and includes a chamber 12 for housing the semiconductor device 6, a heater 15 for heating, and a blower 14 for circulating air heated by the heater 15. A semiconductor device burn-in device in which a semiconductor device 6 is subjected to an operation test in a high-temperature atmosphere includes an air intake port 18 that introduces cold air into a hot air circulation path formed by the blower 14; an exhaust port 19 for discharging hot air to the outside; a damper 17 for opening and closing the intake port 18 and the exhaust port 19; and a damper 17 for opening and closing the intake port 18 and the exhaust port 19;
1. A burn-in apparatus for a semiconductor device, comprising: a control device 20 for switching and controlling the damper 5 to an off state and switching the damper 17 to an open state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7280085U JPS61189281U (en) | 1985-05-16 | 1985-05-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7280085U JPS61189281U (en) | 1985-05-16 | 1985-05-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61189281U true JPS61189281U (en) | 1986-11-26 |
Family
ID=30611554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7280085U Pending JPS61189281U (en) | 1985-05-16 | 1985-05-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61189281U (en) |
-
1985
- 1985-05-16 JP JP7280085U patent/JPS61189281U/ja active Pending
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