JPS61188368U - - Google Patents

Info

Publication number

JPS61188368U

JPS61188368U JP7302885U JP7302885U JPS61188368U JP S61188368 U JPS61188368 U JP S61188368U JP 7302885 U JP7302885 U JP 7302885U JP 7302885 U JP7302885 U JP 7302885U JP S61188368 U JPS61188368 U JP S61188368U

Authority

JP

Japan

Prior art keywords

pressure sensor

silicon

semiconductor substrate

semiconductor

buffer layer

Prior art date

1985-05-17

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 238000002161 passivation Methods 0.000 claims description 3
• 150000004767 nitrides Chemical class 0.000 claims description 2
• 239000004065 semiconductor Substances 0.000 claims 7
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
• 229910052710 silicon Inorganic materials 0.000 claims 4
• 239000010703 silicon Substances 0.000 claims 4
• 239000000758 substrate Substances 0.000 claims 3
• 239000000463 material Substances 0.000 claims 1
• 229910052757 nitrogen Inorganic materials 0.000 claims 1
• IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
• -1 nitrogen ions Chemical class 0.000 claims 1
• 238000010586 diagram Methods 0.000 description 7
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1