JPS61182296A - Circuit board - Google Patents

Circuit board

Info

Publication number
JPS61182296A
JPS61182296A JP2292385A JP2292385A JPS61182296A JP S61182296 A JPS61182296 A JP S61182296A JP 2292385 A JP2292385 A JP 2292385A JP 2292385 A JP2292385 A JP 2292385A JP S61182296 A JPS61182296 A JP S61182296A
Authority
JP
Japan
Prior art keywords
circuit board
dielectric constant
polyimide resin
insulating layer
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2292385A
Other languages
Japanese (ja)
Inventor
敦子 飯田
須藤 俊夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2292385A priority Critical patent/JPS61182296A/en
Publication of JPS61182296A publication Critical patent/JPS61182296A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (発明の技術分野) この発明は回路基板に係り、特に基板材料または層間絶
縁膜の材料として使用される低誘電率絶縁材料に関する
DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a circuit board, and particularly to a low dielectric constant insulating material used as a substrate material or an interlayer insulating film material.

(発明の技術的背景とその問題点〕 ポリイミド樹脂は耐熱性に優れ、誘電率も比較的低い(
比誘電率で3.2〜3.5程度)ため、プリント配線板
やLSI実装用基板等の回路基板における基板材料や、
多層配線基板における層間絶縁膜の材料として最近特に
注目されている絶縁材料の一つである。
(Technical background of the invention and its problems) Polyimide resin has excellent heat resistance and a relatively low dielectric constant (
(relative dielectric constant of about 3.2 to 3.5), it is used as a substrate material for circuit boards such as printed wiring boards and LSI mounting boards,
It is one of the insulating materials that has recently attracted particular attention as a material for interlayer insulating films in multilayer wiring boards.

ところで、GaAS (ガリウムひ素)ICのような高
速論理素子では、その高速化に伴い、基板上の配線での
信号伝搬速度の低下、配線間のクロストーク等が問題と
なっており、そのため基板材料や層間絶縁膜の材料には
できるだけ誘電率の低いものが要求されている。誘電率
の低い絶縁材料としては例えば四フッ化エチレン樹脂(
比誘電率2.1〜2.5種度)が知られているが、エツ
チング等の加工性が悪いという問題がある。従って、加
工性に優れたポリイミド樹脂の使用が望ましいのである
が、誘電率の点で四フッ化エチレン樹脂より劣る。この
ようにポリイミド樹脂、四フッ化エチレン樹脂は回路基
板用絶縁材料としてみると、いずれも一長一短がある。
By the way, as high-speed logic elements such as GaAS (gallium arsenide) ICs increase in speed, problems such as a reduction in signal propagation speed in the wiring on the substrate and crosstalk between wiring have become problems, so the substrate material Materials for interlayer insulating films are required to have as low a dielectric constant as possible. An example of an insulating material with a low dielectric constant is tetrafluoroethylene resin (
Although it is known to have a dielectric constant of 2.1 to 2.5 degrees, it has a problem of poor processability such as etching. Therefore, it is desirable to use polyimide resin, which has excellent processability, but is inferior to tetrafluoroethylene resin in terms of dielectric constant. As described above, polyimide resin and tetrafluoroethylene resin both have advantages and disadvantages when viewed as insulating materials for circuit boards.

(発明の目的) 本発明の目的は、低誘電率であって、加工性にも優れた
絶縁材料を用いた回路基板を提供することにある。
(Object of the Invention) An object of the present invention is to provide a circuit board using an insulating material having a low dielectric constant and excellent workability.

〔発明の概要〕[Summary of the invention]

本発明に係る回路基板は、ポリイミド樹脂に気泡を含有
させてなる低誘電率材料を用いたことを特徴とするもの
である。
The circuit board according to the present invention is characterized by using a low dielectric constant material made of polyimide resin containing bubbles.

〔発明の効果〕〔Effect of the invention〕

本発明に係る回路基板における低誘電率絶縁材料は、ポ
リイミド樹脂を主体としているため加工性が良好であり
、しかも気泡が含まれているために誘電率が低いという
特長を有する。従って、高速論理素子の実装用回路基板
における基板材料や、層間絶縁膜材料等として極めて有
効である。
The low dielectric constant insulating material for the circuit board according to the present invention is characterized by good workability because it is mainly composed of polyimide resin, and has a low dielectric constant because it contains air bubbles. Therefore, it is extremely effective as a substrate material for a circuit board for mounting high-speed logic elements, an interlayer insulating film material, etc.

〔発明の実施例] 第1図は本発明の一実施例に係る回路基板の断面図であ
る。図において、基板1は導体層2の上に絶縁層3を形
成して構成され、絶縁層3上に複数の導体配線4が形成
されている。
[Embodiment of the Invention] FIG. 1 is a sectional view of a circuit board according to an embodiment of the invention. In the figure, a substrate 1 is constructed by forming an insulating layer 3 on a conductor layer 2, and a plurality of conductor wirings 4 are formed on the insulating layer 3.

絶縁層3は本発明に基づく気泡を含有したポリイミド樹
脂からなるものであって、例えば2μm程度の厚さに形
成されている。このような気泡を含んだポリイミド樹脂
を作製するには、例えばポリイミド樹脂の前駆体である
ワニス状のポリアミド樹脂を適当な攪拌器を用いて攪拌
することにより気泡を混入させればよい。この際、攪拌
により生じた気泡が凝集して外部に逃げてしまわないよ
うに、適当な界面活性剤を適宜添加させることが望まし
い。但し、界面活性剤の材質および量は、気泡を含有し
たポリイミド樹脂の誘電率の低下を損わないように選定
する必要があるのは言うまでもない。こうして気泡が混
入されたワニス状のポリイミド樹脂を導体層2上に塗布
した後、例えば300〜350℃程度の温度に加熱して
脱水縮合反応を起こさせることにより、気泡を含有した
ポリイミド樹脂からなる絶縁層3が形成される。
The insulating layer 3 is made of a polyimide resin containing bubbles according to the present invention, and is formed to have a thickness of, for example, about 2 μm. In order to produce such a polyimide resin containing bubbles, for example, a varnish-like polyamide resin, which is a precursor of a polyimide resin, may be stirred using a suitable stirrer to mix bubbles into the polyamide resin. At this time, it is desirable to add an appropriate surfactant to prevent bubbles generated by stirring from agglomerating and escaping to the outside. However, it goes without saying that the material and amount of the surfactant must be selected so as not to impair the reduction in dielectric constant of the polyimide resin containing bubbles. After applying the varnish-like polyimide resin mixed with air bubbles onto the conductor layer 2, the polyimide resin containing air bubbles is heated, for example, to a temperature of about 300 to 350°C to cause a dehydration condensation reaction. An insulating layer 3 is formed.

この構造の回路基板における導体配線4上での信号伝搬
速度のシミュレーション結果を以下に示す。本発明の一
実施例として、気泡を体積率で40%含有させたポリイ
ミド樹脂からなる絶縁層3を2μmの厚さに形成し、ま
た導体配線4として線幅W=2μmのストリップ状配線
を線間スペースS=2μmの間隔で2本形成した回路基
板を作製した。一方、比較例として気泡を含有させない
通常のポリイミド樹脂(比誘電率3.5)からなる絶縁
層を形成したものを作製した。
The simulation results of the signal propagation speed on the conductor wiring 4 in the circuit board with this structure are shown below. As an embodiment of the present invention, an insulating layer 3 made of polyimide resin containing 40% of air bubbles by volume is formed to a thickness of 2 μm, and a strip-shaped wiring with a line width W=2 μm is formed as a conductor wiring 4. A circuit board was produced in which two circuit boards were formed with an interval of S=2 μm. On the other hand, as a comparative example, an insulating layer made of a normal polyimide resin (relative permittivity: 3.5) containing no air bubbles was prepared.

これら2種の回路基板について2つの独立した伝搬モー
ド、即ちイーブンモードとオツドモードに対する導体配
線上での伝搬速度を求めると、通常のポリイミド樹脂か
らなる絶縁層を形成した比較例の回路基板では、それぞ
れ1.84X10”m/Sおよび2.01 xl 0’
 m/sであるのに5一 対し、気泡を含有させたポリイミド樹脂からなる絶縁層
を形成した本発明に基く回路基板では、それぞれ2.3
5x10111 m/sおよび2..47X108m/
sとなる。これは光速のほぼ80%であり、この伝搬速
度の向上は絶縁層3を構成するポリイミド樹脂に気泡を
含有させたことによる実効誘電率の低下に基く効果であ
る。
When determining the propagation speed on conductor wiring for two independent propagation modes, that is, even mode and odd mode, for these two types of circuit boards, it is found that for the comparative example circuit board on which an insulating layer made of ordinary polyimide resin is formed, each 1.84X10”m/S and 2.01 xl 0'
m/s is 5, whereas in the circuit board based on the present invention in which an insulating layer made of polyimide resin containing bubbles is formed, the speed is 2.3.
5x10111 m/s and 2. .. 47X108m/
It becomes s. This is approximately 80% of the speed of light, and this improvement in propagation speed is an effect based on the reduction in the effective dielectric constant due to the inclusion of air bubbles in the polyimide resin constituting the insulating layer 3.

このように気泡を含有したポリイミド樹脂からなる絶縁
層3を基板材料に使用した本実施例の回路基板によれば
、気泡を含有しない通常のポリイミド樹脂を絶縁層に使
用した従来の回路基板と比較して、信号伝搬速度がイー
ブン、オツドの各モードに対しそれぞれ28%、23%
も増加し、光速の80%程度という超高速の伝搬速度が
得られる。従って、この回路基板はGaAS  ICの
ような超高速素子の実装用基板として好適である。
According to the circuit board of this example in which the insulating layer 3 made of polyimide resin containing bubbles is used as the substrate material, compared with the conventional circuit board in which the insulating layer is made of ordinary polyimide resin that does not contain bubbles. The signal propagation speed is 28% and 23% for even and odd modes, respectively.
The speed of propagation increases, and an ultra-high propagation speed of about 80% of the speed of light can be obtained. Therefore, this circuit board is suitable as a mounting board for ultra-high-speed devices such as GaAS IC.

第2図は本発明の他の実施例に係る回路基板の断面図で
ある。この実施例において基板10は、裏面に接地導体
層11が被着されたGaAsのような半絶縁性材料、ま
たはアルミナセラミックの−〇− ような絶縁性材料からなる基体12上に、本発明に基く
気泡を含有したポリイミド樹脂からなる絶縁層13を表
面層として形成したものであり、絶縁層13上に導体配
線14が形成される。
FIG. 2 is a sectional view of a circuit board according to another embodiment of the present invention. In this embodiment, the substrate 10 is formed on a base 12 made of a semi-insulating material such as GaAs or an insulating material such as alumina ceramic with a ground conductor layer 11 deposited on the back side. An insulating layer 13 made of polyimide resin containing bubbles is formed as a surface layer, and conductive wiring 14 is formed on the insulating layer 13.

なお、図示してないが基体12がGaAs等の半絶縁性
材料の場合、基体12上に所望の回路が半導体プロセス
に、・より形成さ□・れ、導・体配線14と接続される
ことによってi速論即ICを構成する。
Although not shown, if the base 12 is made of a semi-insulating material such as GaAs, a desired circuit can be formed on the base 12 by a semiconductor process and connected to the conductor/body wiring 14. An i-speed theory IC is constructed.

また、基板12がアルミナセラミック等の絶縁性材料の
場合は、その上にチップ形態のディジタルIC等が搭載
され、ワイヤボンディングその他の手段により導体配線
14と接続されることによって、全体としてハイスリッ
ドICを構成するものとする。基体12上に形成または
搭載される回路は、絶縁層13上に形成または搭載され
ていてもよいし、絶縁層13が選択的に除去された領域
上に形成または搭載されていても構わない。
Furthermore, if the substrate 12 is made of an insulating material such as alumina ceramic, a chip-shaped digital IC or the like is mounted on it and connected to the conductor wiring 14 by wire bonding or other means, thereby forming a high-slid IC as a whole. shall be configured. The circuit formed or mounted on the base 12 may be formed or mounted on the insulating layer 13, or may be formed or mounted on the region where the insulating layer 13 is selectively removed.

この実施例の回路基板によれば、基板10の表面層、即
ち導体配線14の直下の部分の基板材料が、気泡を含有
したポリイミド樹脂からなる低誘電率の絶縁層13であ
ることにより、比較的高誘電率である基体12上に導体
配線を直接形成したものと比較して信号伝搬速度の向上
を図ることができるばかりでなく、基体12と絶縁層1
3の厚さの関係を適切に選ぶことで、クロストークノイ
ズの低減をも図ることができるという利点がある。
According to the circuit board of this embodiment, the surface layer of the board 10, that is, the part directly under the conductor wiring 14, is made of a low dielectric constant insulating layer 13 made of polyimide resin containing bubbles, so that Not only can the signal propagation speed be improved compared to the case where conductor wiring is directly formed on the base 12 which has a high dielectric constant, but also the base 12 and the insulating layer 1
There is an advantage in that crosstalk noise can also be reduced by appropriately selecting the thickness relationship in 3.

この第2の実施例をさらに具体的に説明すると、例えば
基体12として比誘電率が12で厚さ、300μmのG
aAs基板を用い、その上に絶縁層13を形成し、さら
にその上に線幅Wおよび線間スペースSがそれぞれ2μ
mであるような導体配線4を形成した。
To explain this second embodiment more specifically, for example, the base 12 is made of G with a dielectric constant of 12 and a thickness of 300 μm.
An aAs substrate is used, an insulating layer 13 is formed on it, and a line width W and an interline space S are each 2μ.
A conductor wiring 4 having a diameter of m was formed.

第3図に絶縁層13の厚さを2.5μmとして、その誘
電率を変えた場合のイーブン、オツドの各モードでの信
号伝搬速度を示す。絶縁層13が本発明に基づく40%
気泡を含有したポリイミド樹脂である場合、このモデル
の信号伝搬速度はイーブン、オツドモードでそれぞれ1
.45X10Bm/sおよび2.52X10日m/Sと
なる。ちなみに通常のポリイミド樹脂の場合は、それぞ
れ1.32X10’ m/sおよび2.18X10”m
/Sとなる。
FIG. 3 shows the signal propagation speed in even and odd modes when the thickness of the insulating layer 13 is 2.5 μm and the dielectric constant is changed. Insulating layer 13 is 40% according to the invention
In the case of polyimide resin containing bubbles, the signal propagation speed of this model is 1 in both even and odd modes.
.. 45X10Bm/s and 2.52X10 days m/S. By the way, in the case of normal polyimide resin, the speed is 1.32X10' m/s and 2.18X10"m, respectively.
/S.

第4図には、絶縁層13として40%気泡を含有させた
ポリイミド樹脂および通常のポリイミド樹脂の膜厚を変
えた場合の導体配線14間のクロストークレベルを示し
た。導体配線14の配線長℃は3 mmとし、測定条件
は導体配線14の一端に1にΩの終端抵抗を装荷して、
ここに立上がり面間0.1nsのパルス信号を印加し、
10MΩの終端抵抗が接続された導体配線14の他端で
信号伝搬速度およびクロストークレベルを測定した。
FIG. 4 shows the crosstalk level between the conductor wirings 14 when the film thicknesses of the insulating layer 13 are made of a polyimide resin containing 40% bubbles and a normal polyimide resin. The wiring length of the conductor wiring 14 is 3 mm, and the measurement conditions are as follows: A terminating resistor of 1Ω is loaded at one end of the conductor wiring 14.
A pulse signal of 0.1 ns between rising surfaces is applied here,
The signal propagation speed and crosstalk level were measured at the other end of the conductor wiring 14 to which a 10 MΩ terminating resistor was connected.

この測定方法は、文献(1)吉原他“”GaAs  I
Cにおける高速パルス伝送特性の数値解析′”、電子通
信学会研究会資料S S D −83−159(198
4)に記載された方法である。この図から明らかなよう
に、絶縁層13が通常のポリイミド樹脂の場合には22
%程度あったクロストークレベルが、絶縁層13に本発
明に基づく気泡を含有したポリイミド樹脂を用いた場合
には17%程度まで低減される。このクロストークノイ
ズの低減効果は、絶線層13の誘電率が小さい程大きい
This measurement method is described in the literature (1) Yoshiwara et al.
Numerical analysis of high-speed pulse transmission characteristics in
This is the method described in 4). As is clear from this figure, when the insulating layer 13 is made of ordinary polyimide resin, 22
%, but when the polyimide resin containing bubbles according to the present invention is used for the insulating layer 13, the crosstalk level is reduced to about 17%. The effect of reducing this crosstalk noise is greater as the dielectric constant of the disconnected layer 13 is smaller.

なお、本発明はその他要旨を逸脱しない範囲で種々変形
実施が可能であり、例えば実施例では本発明に基く気泡
を含有したポリイミド樹脂を基板材料そのものに使用し
た例を述べたが、多層配線回路基板における層間絶縁膜
、あるいは各種回路基板における保護膜等としても使用
が可能であることは勿論である。
It should be noted that the present invention can be modified in various ways without departing from the gist of the invention. For example, in the embodiment, an example was described in which the polyimide resin containing bubbles according to the present invention was used as the substrate material itself. Of course, it can also be used as an interlayer insulating film on a substrate or a protective film on various circuit boards.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る回路基板の一実施例の断面図、第
2図は本発明に係る回路基板の他の実施例の断面図、第
3図は第2図の実施例の回路基板における絶縁層の比誘
電率と導体配線上の信号伝搬速度との関係を示す図、第
4図は第2図の実施例の回路基板における絶縁層の膜厚
と導体配線間のクロストークレベルとの関係を示す図で
ある。 1・・・基板、2・・・導体層、3・・・気泡入りポリ
イミド樹脂からなる絶縁層、4・・・導体配線、1o・
・・基板、11・・・接地導体層、12・・・絶縁性ま
たは半絶縁性材料からなる基体、13・・・気泡入りボ
リイミド樹脂からなる絶縁層、14・・・導体配線。 第1図 一5/LLI)’!T値に鈴
FIG. 1 is a cross-sectional view of one embodiment of the circuit board according to the present invention, FIG. 2 is a cross-sectional view of another embodiment of the circuit board according to the present invention, and FIG. 3 is a circuit board of the embodiment of FIG. 2. Figure 4 shows the relationship between the dielectric constant of the insulating layer and the signal propagation speed on the conductor wiring in the example shown in Figure 2. FIG. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Conductor layer, 3... Insulating layer made of polyimide resin containing bubbles, 4... Conductor wiring, 1o.
. . . Substrate, 11 . . . Ground conductor layer, 12 . . . Base made of an insulating or semi-insulating material, 13 . Figure 1-5/LLI)'! Bell on T value

Claims (4)

【特許請求の範囲】[Claims] (1)ポリイミド樹脂に気泡を含有させた低誘電率絶縁
材料を用いたことを特徴とする回路基板。
(1) A circuit board characterized by using a low dielectric constant insulating material made of polyimide resin containing bubbles.
(2)前記低誘電率絶縁材料は、導体上に絶縁層を形成
してなる基体の上に導体配線を形成してなる回路基板に
おける上記絶縁層に使用されるものであることを特徴と
する特許請求の範囲第1項記載の回路基板。
(2) The low dielectric constant insulating material is characterized in that it is used for the insulating layer in a circuit board formed by forming conductor wiring on a base formed by forming an insulating layer on a conductor. A circuit board according to claim 1.
(3)前記低誘電率絶縁材料は、絶縁性または半絶縁性
の基体上に導体配線を形成してなる回路基板における上
記基体と導体配線との間に介在されるものであることを
特徴とする特許請求の範囲第1項記載の回路基板。
(3) The low dielectric constant insulating material is interposed between the base and the conductor wiring in a circuit board formed by forming the conductor wiring on an insulating or semi-insulating base. A circuit board according to claim 1.
(4)前記低誘電率絶縁材料は、導体配線と層間絶縁膜
とを交互に形成してなる多層配線回路基板における上記
層間絶縁膜に使用されるものであることを特徴とする特
許請求の範囲第1項記載の回路基板。
(4) The low dielectric constant insulating material is used for the interlayer insulating film in a multilayer wiring circuit board in which conductor wiring and interlayer insulating films are alternately formed. The circuit board according to item 1.
JP2292385A 1985-02-08 1985-02-08 Circuit board Pending JPS61182296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2292385A JPS61182296A (en) 1985-02-08 1985-02-08 Circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2292385A JPS61182296A (en) 1985-02-08 1985-02-08 Circuit board

Publications (1)

Publication Number Publication Date
JPS61182296A true JPS61182296A (en) 1986-08-14

Family

ID=12096160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2292385A Pending JPS61182296A (en) 1985-02-08 1985-02-08 Circuit board

Country Status (1)

Country Link
JP (1) JPS61182296A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254788A (en) * 1989-03-28 1990-10-15 Nec Corp Multilayer printed wiring board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254788A (en) * 1989-03-28 1990-10-15 Nec Corp Multilayer printed wiring board

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