JPS61168663U - - Google Patents
Info
- Publication number
- JPS61168663U JPS61168663U JP5196785U JP5196785U JPS61168663U JP S61168663 U JPS61168663 U JP S61168663U JP 5196785 U JP5196785 U JP 5196785U JP 5196785 U JP5196785 U JP 5196785U JP S61168663 U JPS61168663 U JP S61168663U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- substrate
- inclined surface
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
Description
第1図A,Bは本考案半導体レーザ装置の実施
の一例を示すもので、Aは断面図、Bは傾斜面の
一部を拡大して示す平面図、第2図は半導体レー
ザ装置の一つの従来例を示す断面図、第3図乃至
第7図は光学式記録媒体の0次ビームに対するタ
ンジエンシヤルスキユー角の変化によつてトラツ
キングエラー信号が変化するという問題点を説明
するためのもので、第3図は光学式ヘツドの構成
図、第4図乃第5図は半導体レーザ素子の正面図
、第6図はスキユー角に対するトラツキングエラ
ー信号の理想的なレベル変化を示す波形図、第7
図は干渉の説明に供する線図である。
符号の説明、10…基板、12…傾斜面、17
…半導体レーザ素子、19…レーザビーム出射端
面、21…反射膜。
1A and 1B show an example of the implementation of the semiconductor laser device of the present invention, where A is a cross-sectional view, B is a plan view showing an enlarged part of the inclined surface, and FIG. 2 is an example of the semiconductor laser device. 3 to 7 are cross-sectional views showing two conventional examples, in order to explain the problem that the tracking error signal changes due to a change in the tangential skew angle with respect to the zero-order beam of the optical recording medium. Figure 3 is a configuration diagram of the optical head, Figures 4 and 5 are front views of the semiconductor laser element, and Figure 6 is a waveform showing the ideal level change of the tracking error signal with respect to the skew angle. Figure, 7th
The figure is a diagram used to explain interference. Explanation of symbols, 10...Substrate, 12...Slanted surface, 17
... Semiconductor laser element, 19 ... Laser beam emission end face, 21 ... Reflection film.
Claims (1)
、 上記基板の上記半導体レーザ素子のレーザビー
ム出射端面側に上側に行くに従つてその半導体レ
ーザ素子から離れるように傾斜する傾斜面が形成
され、 該傾斜面の上記半導体レーザ素子からのレーザ
ビームを反射することができ且つ帰還ビームのう
ち中心ビームのみ入射され両側帰還ビームが入射
されない部分上に反射膜が形成されて なることを特徴とする半導体レーザ装置。[Claims for Utility Model Registration] A semiconductor laser element is fixed on a portion of a substrate, and the semiconductor laser element is tilted away from the semiconductor laser element as it goes upward toward the laser beam emitting end face of the semiconductor laser element on the substrate. An inclined surface is formed, and a reflective film is formed on a portion of the inclined surface capable of reflecting the laser beam from the semiconductor laser element and on which only the center beam of the feedback beam is incident and the both side feedback beams are not incident. A semiconductor laser device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5196785U JPS61168663U (en) | 1985-04-08 | 1985-04-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5196785U JPS61168663U (en) | 1985-04-08 | 1985-04-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61168663U true JPS61168663U (en) | 1986-10-20 |
Family
ID=30571491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5196785U Pending JPS61168663U (en) | 1985-04-08 | 1985-04-08 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61168663U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013115245A (en) * | 2011-11-29 | 2013-06-10 | Kyocera Corp | Light receiving/emitting element |
-
1985
- 1985-04-08 JP JP5196785U patent/JPS61168663U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013115245A (en) * | 2011-11-29 | 2013-06-10 | Kyocera Corp | Light receiving/emitting element |
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