JPS61156848A - Diode - Google Patents
DiodeInfo
- Publication number
- JPS61156848A JPS61156848A JP27564284A JP27564284A JPS61156848A JP S61156848 A JPS61156848 A JP S61156848A JP 27564284 A JP27564284 A JP 27564284A JP 27564284 A JP27564284 A JP 27564284A JP S61156848 A JPS61156848 A JP S61156848A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- chip
- reverse recovery
- voltage
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
本発明は、急峻な立ち上がりを持つ電流により発生する
過渡順電圧が小さく、かつ高耐圧である大電流高速ダイ
オードに関する。The present invention relates to a high-current, high-speed diode that has a small transient forward voltage generated by a current with a steep rise and has a high withstand voltage.
ダイオードを高耐圧にするには、通常ダイオードのチッ
プ厚さを厚くして１チツプにより定格電圧を満足させる
方法がとられている。しかしこのようなダイオードを、
第２図に示すようなゲートターンオフ ＣＧＴＯ）サイ
リスタのためのダイオード２２．抵抗２３．コンデンサ
２４からなるスナバ回路のスナバダイオードとして用い
る場合、ＧＴＯサイリスタ２１のターンオフ時にダイオ
ード２２に流れ込む第３図に＆１１２５で示すような急
峻に電流が立ち上がる直前に、ダイオード２２の順方向
に大きな過渡電圧２６が発生し、その電圧がＧＴＯサイ
リスタ２１に印加されてサイリスタを破壊に敗らしめる
場合糸ある。この順回復電圧２６はダイオードチップの
抵抗に起因し、ダイオードを高耐圧にするためにチップ
厚さを厚くすると高くなる。このため、チップ厚さの薄
い低耐圧のダイオードを直列接続する方法もとられた。
しかし、この方法では部品点数の増加、配線の複雑化、
その配線のりアクタンス分による電圧の発生等の問題が
あった。In order to make a diode high withstand voltage, the usual method is to increase the thickness of the diode chip so that a single chip can satisfy the rated voltage. However, such a diode,
Gate turn-off (CGTO) diode 22 for the thyristor as shown in FIG. Resistance 23. When used as a snubber diode in a snubber circuit consisting of the capacitor 24, a large transient voltage 26 is generated in the forward direction of the diode 22 immediately before the current that flows into the diode 22 as shown by &1125 in FIG. occurs and that voltage is applied to the GTO thyristor 21 causing the thyristor to fail. This forward recovery voltage 26 is caused by the resistance of the diode chip, and increases when the chip thickness is increased in order to make the diode high withstand voltage. For this reason, a method was also adopted in which diodes with thin chips and low breakdown voltages were connected in series. However, this method increases the number of parts, complicates wiring,
There were problems such as generation of voltage due to the actance of the wiring.
本発明は、配線の必要がない一体化された高耐圧のダイ
オードでしかも急峻な立ち上がりを持つ電流により発生
する過渡順電圧が低いものを提供することを目的とする
。SUMMARY OF THE INVENTION An object of the present invention is to provide an integrated high-voltage diode that does not require wiring and has a low transient forward voltage generated by a current with a steep rise.
本発明によるダイオードは、複数のダイオードチップが
ろう材を介して積層固着され、側面が連続した傾斜面と
して形成されたベベル形状を有し、面積の大きい側のチ
ップは面積の小さい側のチップに比較して短いキャリア
ライフタイムを有することによって上記の目的を達成す
る。The diode according to the present invention has a bevel shape in which a plurality of diode chips are laminated and fixed through a brazing material, and the side surfaces are formed as continuous sloped surfaces, and the chip with a larger area is connected to the chip with a smaller area. The above objectives are achieved by having a relatively short carrier lifetime.
第１図は、本発明の一実施例を示すもので、それぞれＰ
Ｎ接合１１．１２を有するダイオードチップ１．２が゛
アルミニウム３によってろう付けされ、さらに下側のチ
ップ２の陽極側にはモリブデンあるいはタングステンの
基板４がアルミニウム３を介してろう付けされ、チップ
ｌの陰極側にはアルミニウム電Ｐｆ１５が蒸着されてい
る０両チップのＰＮ接合１１．１２の露出する側面はベ
ベル加工され、傾斜面６を形成して耐圧を高くしてあり
、その上にシリコーンゴム等の表面保護膜７が塗布され
ている。
このような構造の場合、二つのダイオードチップ１．２
のキャリアライフタイム力（同一であるとすると、逆回
復波形に相違があられれる。すなわち、第４図に示すよ
うに面積の小さいチップ１の逆回復波形３１と面積の大
きいチップの逆回復波形３２との差が生ずる６例えば直
径２０ｆｌ程度のチップにおいて面積が２０〜２５％差
があるときには、逆回復電流のピーク値には１０％の差
が生ずる。このような差があると、逆回復時間の短いダ
イオードｌが先に回復することによって、逆電圧のほと
んどがダイオード１に印加されることになる０本発明は
、ダイオードチップ２のキャリアライフタイムをライフ
タイムキラーを導入することによりチップ１のそれより
短くすることによって逆回復時間の値および逆回復電流
のピーク値を小さくし、第５図に示すように逆回復電荷
量３３を同じになるようにして逆回復電圧を両ダイオー
ドチフプ１，２が分Ｉ旦するようにする。
第１図に示した実施例は、ダイオードチップが２枚の場
合であるが、より高耐圧のダイオードを得るためには、
チップの枚数を増加させて陽極に近いチップから陰極側
に向は順にキャリアライフタイムを長くすればよい。
【発明の効果］
本発明は、比較的薄いダイオードチップを積重ねること
により高耐圧でありながら順回復電圧を低くし、さらに
共通のベベル成形によってチップ？面積の小さくなる側
から面積の大きくなる側に向けてキャリアライフタイム
を短くするごとによって、各ダイオードチップの逆回復
電荷量を揃えることで逆甲復時の逆電圧分担が良い高耐
圧高速ダイオードを得るものであり、スナバダイオード
に対して極めて有効に適用できる。FIG. 1 shows an embodiment of the present invention.
A diode chip 1.2 having an N-junction 11.12 is soldered with aluminum 3, and a molybdenum or tungsten substrate 4 is soldered to the anode side of the lower chip 2 via aluminum 3. An aluminum electrode Pf15 is deposited on the cathode side of the chip.The exposed sides of the PN junctions 11 and 12 of both chips are beveled to form an inclined surface 6 to increase the withstand voltage. A surface protective film 7 such as the above is applied. For such a structure, two diode chips 1.2
Assuming that the carrier lifetime force is the same, there will be a difference in the reverse recovery waveforms. That is, as shown in FIG. For example, if there is a 20 to 25% difference in area in a chip with a diameter of about 20fl, a 10% difference will occur in the peak value of the reverse recovery current.If such a difference exists, the reverse recovery time will Since the short diode l recovers first, most of the reverse voltage is applied to the diode 1. The present invention reduces the carrier lifetime of the diode chip 2 by introducing a lifetime killer. By making the reverse recovery time shorter than that, the value of the reverse recovery time and the peak value of the reverse recovery current are reduced, and as shown in FIG. , 2 are set to 1. The embodiment shown in FIG.
The number of chips may be increased to lengthen the carrier lifetime from the chips closest to the anode to the cathode. [Effects of the Invention] The present invention achieves a low forward recovery voltage while having a high withstand voltage by stacking relatively thin diode chips, and further improves the chip resistance by common bevel molding. By shortening the carrier lifetime from the side where the area becomes smaller to the side where the area becomes larger, the amount of reverse recovery charge of each diode chip is made equal, thereby creating a high-voltage high-speed diode with good reverse voltage sharing during reverse recovery. This can be applied extremely effectively to snubber diodes.
第１図は本発明の一実施例の断面図、第２図は本発明に
よるダイオードを用いることのできるＧＴＯインバータ
の回路図、第３図は第２図の回路におけるスナバダイオ
ードの電流、電圧線図、第４図は面積の異なる２枚のダ
イオードチップの積重ねの際の逆回復波形図、第５図は
本発明の実施例における２枚のダイオードチップの逆回
復波形図である。
１．２：ダイオードチップ、３：ＡＩ、６：傾斜面、３
１．３２７チツプの逆回復波形。FIG. 1 is a cross-sectional view of an embodiment of the present invention, FIG. 2 is a circuit diagram of a GTO inverter that can use the diode according to the present invention, and FIG. 3 is a current and voltage line of the snubber diode in the circuit of FIG. 4 is a reverse recovery waveform diagram when two diode chips of different areas are stacked, and FIG. 5 is a reverse recovery waveform diagram of two diode chips in an embodiment of the present invention. 1.2: Diode chip, 3: AI, 6: Inclined surface, 3
1.327 chip reverse recovery waveform.
Claims (1)
され、側面が連続した傾斜面として形成されたベベル形
状を有し、面積の大きい側のチップは面積の小さい側の
チップに比較して短いキャリアライフタイムを有するこ
とを特徴とするダイオード。1) Multiple diode chips are stacked and fixed via a brazing material, and the sides have a beveled shape with continuous sloped surfaces, and the chips with a larger area are shorter than the chips with a smaller area. A diode characterized by having a carrier lifetime.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27564284A JPS61156848A (en) | 1984-12-28 | 1984-12-28 | Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27564284A JPS61156848A (en) | 1984-12-28 | 1984-12-28 | Diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61156848A true JPS61156848A (en) | 1986-07-16 |
Family
ID=17558304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27564284A Pending JPS61156848A (en) | 1984-12-28 | 1984-12-28 | Diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61156848A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011210805A (en) * | 2010-03-29 | 2011-10-20 | Shindengen Electric Mfg Co Ltd | Diode module and protection device |
-
1984
- 1984-12-28 JP JP27564284A patent/JPS61156848A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011210805A (en) * | 2010-03-29 | 2011-10-20 | Shindengen Electric Mfg Co Ltd | Diode module and protection device |
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