JPS61133657A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS61133657A JPS61133657A JP59255505A JP25550584A JPS61133657A JP S61133657 A JPS61133657 A JP S61133657A JP 59255505 A JP59255505 A JP 59255505A JP 25550584 A JP25550584 A JP 25550584A JP S61133657 A JPS61133657 A JP S61133657A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tantulum
- nitride film
- thickness
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000003860 storage Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract 4
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000029305 taxis Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法、例えばダイナミック・
ランダム・アクセス・メモリ （ｄ−ＲＡＭ ）のスト
レージキャパシタ（ｓｔｏｒａｇｅ ｃａｐａｃｉｔｏ
ｒ＋以下キャパシタという）に用いる五酸化タンタル膜
を作るタンタル膜（Ｔａ膜）の抵抗を１５０μΩ・ｃｎ
＋以下に設定し、しかる後にそれの熱処理をなすことに
より特性に優れたキャパシタを形成する方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device manufacturing method, for example, a dynamic
random access memory (d-RAM) storage capacitor
The resistance of the tantalum film (Ta film) that makes the tantalum pentoxide film used for r
It relates to a method for forming a capacitor with excellent characteristics by setting the temperature to be less than + and then subjecting it to heat treatment.
ｄ−ＲＡＭの絶縁膜として従来は二酸化シリコン膜（５
ｉ０２膜）が用いられてきたが、それをＴａを酸化して
得られる五酸化タンタル膜（Ｔａ工０５膜）で置き換え
る研究が進められている。その理由は、Ｓ＋０２の誘電
率は３．９程度であるのに対し、Ｔａ２０５のそれは２
０以上であり、従来はキャパシタの容量を大にするため
５ｉ０２膜は１００人程鹿の膜厚にしなければならず、
そのことは製造工程上難しい問題を含むものであったの
に対し、誘電率がＳｔＯ＋の５倍以上のＴａｚ０５を用
いると、その膜厚を５００人程人程しても十分に大なる
容量が得られると共に、５００人の膜厚のＴａＬＯ５膜
を作ることは、１００人の膜厚の５ｉ０２膜を作るより
製造工程が容易であるからである。Conventionally, silicon dioxide film (5
i02 film) has been used, but research is underway to replace it with a tantalum pentoxide film (Ta-05 film) obtained by oxidizing Ta. The reason is that the dielectric constant of S+02 is about 3.9, while that of Ta205 is 2.
0 or more, and conventionally, in order to increase the capacitance of a capacitor, the 5i02 film had to be made about 100 times thicker.
This involved difficult problems in the manufacturing process, but by using Taz05, which has a dielectric constant more than five times that of StO+, a sufficiently large capacity could be achieved even with a film thickness of about 500 people. This is because manufacturing a TaLO5 film with a thickness of 500 people is easier than manufacturing a 5i02 film with a thickness of 100 people.
そして、シリコン基板上にクランクや凹凸のないＴａｚ
Ｏｓ膜を作るには、基板上に先ずシリコン窒化膜（Ｓｉ
３ ｔＪｑ膜）を成長し、その上にＴａを堆積してＴａ
膜を作り、このＴａ膜を熱酸化により酸化すると、クラ
ックや凹凸のないＴａｚＯｓが得られることを本発明者
は確認した。And Taz with no crank or unevenness on the silicon substrate.
To make an Os film, first a silicon nitride film (Si
3tJq film) and deposit Ta on it to form a Ta
The inventors have confirmed that by forming a film and oxidizing this Ta film by thermal oxidation, TazOs without cracks or irregularities can be obtained.
ところで、’ ｄ−ＲＡＭのストレージキャパシタとし
て用いられるＴａｘｅｓ Ｆは、７００℃付近以上の熱
処理によってＴａｘｅｓの結晶化が始まり、熱処理温度
上昇と共に結晶化の度合が進行する。この結晶化は、Ｔ
ａａＯｓ膜の漏れ電流（ｌｅａｋａｇｅ ｃｕｒｒｅｎ
ｔ ）が増大し、キャパシタの特性を著しく劣化させる
原因の一つであることが知られている（Ｊ、Ｅ、Ｃ，Ｓ
。By the way, in Taxes F used as a storage capacitor of 'd-RAM, crystallization of Taxes begins by heat treatment at around 700° C. or higher, and the degree of crystallization progresses as the heat treatment temperature increases. This crystallization is T
leakage current of aaOs film
It is known that J, E, C, S
.
Ｖｏｌ、１３０． Ｎｏ、 １２． ｐ、 ２４１４．
’ ８３） 、漏れ電流の発生は、結晶中に存在す
るピンホールが原因の一つであると考えられるので、漏
れ電流を小にするにはＴａａＯｓ膜の製造においてＴａ
ＬＯｓが結晶化しない条件を決定し、そのような条件の
下でＴａａＯｓ膜を作成する方法が研究されている。Vol, 130. No, 12. p, 2414.
'83) The generation of leakage current is thought to be caused by pinholes existing in the crystal, so in order to reduce leakage current, Ta is used in the production of TaaOs films.
Research is underway to determine conditions under which LOs do not crystallize, and to create a TaaOs film under such conditions.
本発明は、上記問題点を解消したＴａ１０５膜の製造方
法を提供するもので、その手段は、五酸化タンタル膜と
シリコン窒化膜から成るストレージキャパシタの形成に
おいて、シリコン基板上に成長したシリコン窒化膜上に
抵抗１５０μΩ・Ｃｌ１１以下のタンタル膜を形成し、
該タンタル膜の熱酸化とアニールを行うことを特徴とす
る半導体装置の製造方法によってなされる。The present invention provides a method for manufacturing a Ta105 film that solves the above-mentioned problems, and the method is to form a storage capacitor consisting of a tantalum pentoxide film and a silicon nitride film. A tantalum film with a resistance of 150 μΩ・Cl11 or less is formed on top,
This is accomplished by a method of manufacturing a semiconductor device characterized by performing thermal oxidation and annealing of the tantalum film.
上記方法においては、Ｔａ２ｋｓ膜を作るに際して、Ｔ
ａの膜抵抗を１５０μΩ・ｃｍ以下に抑え、それを熱処
理することによってＴａ２ｅｓの結晶化を抑え、かかる
Ｔａユ０５膜によってキャパシタを形成し、漏れ電流の
発生を抑えてキャパシタの特性劣化を防止するものであ
り、Ｔａの膜抵抗を前記の値以下に抑えるには、広い範
囲の温度にわたってＴａの堆積が可能になるようシリコ
ン窒化膜の上にＴａを堆積し、次いで高温度でＴａａＯ
ｓ膜を形成するものである。In the above method, when making the Ta2ks film, T
By suppressing the film resistance of a to 150 μΩ·cm or less and heat-treating it, crystallization of Ta2es is suppressed, and a capacitor is formed by such a TaY05 film, suppressing the occurrence of leakage current and preventing deterioration of capacitor characteristics. In order to suppress the film resistance of Ta below the above value, Ta is deposited on a silicon nitride film so that Ta can be deposited over a wide range of temperatures, and then TaaO is deposited at a high temperature.
This forms an s film.
以下、図面を参照して本発明の実施例を詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
先ず、第１図の断面図を参照して本発明にかかるＴａ膜
０５膜の形成方法を説明する。シリコン基板１上にシリ
コン窒化膜２を１０００人の膜厚に例えば化学気相成長
法（ＣＶＤ法）で成長し、シリコン窒化膜２の上に３０
０Å以下の膜厚にタンタル（Ｔａ）を蒸着する。First, a method for forming the Ta film 05 according to the present invention will be explained with reference to the cross-sectional view of FIG. A silicon nitride film 2 is grown on a silicon substrate 1 to a thickness of 1000 nm by, for example, chemical vapor deposition (CVD).
Tantalum (Ta) is deposited to a thickness of 0 Å or less.
次いで、５００℃の温度、乾酸素雰囲気中でＴａを熱酸
化し、次いで１１００℃で３０分アニールしてＴａ膜３
をＴａ２ｅｓ膜３ａに酸化する。Next, Ta was thermally oxidized at a temperature of 500°C in a dry oxygen atmosphere, and then annealed at 1100°C for 30 minutes to form a Ta film 3.
is oxidized into a Ta2es film 3a.
次に、ＴａａＯｓの結晶化を、第２図の線図に示す如く
、アメリカ材料試験協会（Ａｍｅｒｉｃａｎ ５ｏｃｉ
ｅｔｙｏｆ Ｔｅｓｔｉｎｇ Ｍａｔｅｒｉａｌｓ、
ＡＳＴＭ）の規定に従うハナワルト法によるＸ線回折法
で測定した。なお、第２図においては、横軸にＴａの抵
抗（ρ）をμΩ・ｃｌｌｌでとり、縦軸にＸ線回折強度
をとるが、Ｔａの（００１）面の強度を１とした。曲線
Ａは（００１）面、曲線Ｂは（１００）面、曲線Ｃは（
１０１）面について抵抗ρとＸ線回折強度の関係を示す
。同図から、Ｔａの抵抗１５０μΩ・ｃｍにおいて急激
に結晶化が進むこと、いいかえると、 １５０μΩ・ｃ
ｍ以下では結晶化が著しく抑制されることが理解される
。Next, the crystallization of TaaOs was determined by the American Society for Testing and Materials, as shown in the diagram in Figure 2.
etyof Testing Materials,
It was measured by X-ray diffraction method according to the Hanawalt method according to the regulations of ASTM. In FIG. 2, the resistance (ρ) of Ta is plotted in μΩ·clll on the horizontal axis, and the X-ray diffraction intensity is plotted on the vertical axis, where the intensity of the (001) plane of Ta is taken as 1. Curve A is (001) plane, curve B is (100) plane, curve C is (
101) shows the relationship between resistance ρ and X-ray diffraction intensity for the plane. From the same figure, it can be seen that crystallization rapidly progresses when the resistance of Ta is 150 μΩ・cm, in other words, 150 μΩ・c
It is understood that crystallization is significantly suppressed below m.
以上説明したように本発明によれば、Ｔａをアニ−ルし
てＴａ ｚ０５膜を作る際に、Ｔａ膜抵抗を１５０μΩ
・ｃｌｌ以下に抑えることによりＴａ膜０５の結晶化が
抑制され、その結果Ｔａｘｅｓ膜にピンホールなどの欠
陥の発生が抑えられるので、漏れ電流の発生が抑制され
、特性に優れたＴａｘ Ｏｓ膜が、従って特性の良いｄ
−ＲＡＭのストレージキャパシタが提供される。As explained above, according to the present invention, when annealing Ta to form a Ta z05 film, the Ta film resistance is set to 150 μΩ.
・Crystallization of the Ta film 05 is suppressed by keeping it below cll, and as a result, the occurrence of defects such as pinholes in the Taxes film is suppressed, so the occurrence of leakage current is suppressed, and a TaxOs film with excellent characteristics is created. , so d with good characteristics
- A RAM storage capacitor is provided.
第１図（ａｌと（ｂｌは本発明にかかるＴａ膜０５膜の
形成を示す断面図、第２図はＴａの抵抗とＸ線回折強度
との関係を示す線図である。
図中、１はシリコン基板、２↓よシリコン窒化膜、３は
Ｔａ膜、３ａはＴａ膜０５膜、をそれぞれ示す。FIG. 1 (al and (bl) are cross-sectional views showing the formation of the Ta film 05 according to the present invention, and FIG. 2 is a diagram showing the relationship between the resistance of Ta and the X-ray diffraction intensity. In the figure, 1 2 indicates a silicon substrate, 2↓ indicates a silicon nitride film, 3 indicates a Ta film, and 3a indicates a Ta film 05 film.
Claims (1)
ジキャパシタの形成において、シリコン基板上に成長し
たシリコン窒化膜上に抵抗１５０μΩ・ｃｍ以下のタン
タル膜を形成し、該タンタル膜の熱酸化とアニールを行
うことを特徴とする半導体装置の製造方法。In forming a storage capacitor consisting of a tantalum pentoxide film and a silicon nitride film, a tantalum film with a resistance of 150 μΩ·cm or less is formed on a silicon nitride film grown on a silicon substrate, and the tantalum film is thermally oxidized and annealed. A method for manufacturing a semiconductor device, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59255505A JPS61133657A (en) | 1984-12-03 | 1984-12-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59255505A JPS61133657A (en) | 1984-12-03 | 1984-12-03 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61133657A true JPS61133657A (en) | 1986-06-20 |
Family
ID=17279677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59255505A Pending JPS61133657A (en) | 1984-12-03 | 1984-12-03 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61133657A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01160046A (en) * | 1987-12-17 | 1989-06-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE19958203A1 (en) * | 1999-12-02 | 2001-06-13 | Infineon Technologies Ag | Production of an oxidation-resistant electrode comprises forming a metal oxide layer on a substrate, applying an oxidation blocking layer impermeable for oxygen atoms and applying an electrode on the blocking layer |
-
1984
- 1984-12-03 JP JP59255505A patent/JPS61133657A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01160046A (en) * | 1987-12-17 | 1989-06-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE19958203A1 (en) * | 1999-12-02 | 2001-06-13 | Infineon Technologies Ag | Production of an oxidation-resistant electrode comprises forming a metal oxide layer on a substrate, applying an oxidation blocking layer impermeable for oxygen atoms and applying an electrode on the blocking layer |
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