JPS61111523A - Liquid-phase epitaxial crystal growth equipment - Google Patents

Abstract

PURPOSE:To obtain a liquid-phase epitaxial crystal growth equipment whose constitution and operation is simple by a method wherein suturated melt in a suturated melt storage chamber which is provided to lower stage of a crystal growth chamber is moved to the crystal growth chamber by means of sliding an L-shape slider. CONSTITUTION:An L-shape slider 26 is assembled to a boat main body 21 and Ga suturated melt 8 is flowed into a lower stage chamber 23, and a partition plate 24, which parts an upper stage chamber 22 and a lower stage chamber 23, and an epitaxial crystal growth substrate holder 27, which is set a substrate 9 to be subjected to perform epitaxial crystal growth, are assembled to the boat main body 21. When the L-shape slider 26 is subjected to move in the arrow A direction, the Ga suturated melt 8 in the lower stage chamber 23 is flowed to the upper stage chamber 22 through the aperture 25 at one edge of the partition plate 24. The Ga suturated melt 8 flowed into the upper stage chamber 22 soaks the epitaxial crystal growth substrate 9 through an aperture 28 provided at lattier-state to the base of the substrate holder 27. Thereafter, the epitaxial crystal growth is performed on the substrate 9 if it is cooled gradually.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to an improvement in a liquid phase epitaxial crystal growth apparatus.

[Prior Art J] In semiconductor devices using ■-Y group compound semiconductors, such as light emitting diodes and solar cells, the amount of electricity in a liquid phase epitaxially grown crystal layer is an important technology.

FIG. 3 is a plan view showing the configuration of a conventional liquid phase epitaxial crystal growth apparatus used for such applications, and FIG. In the figure, (
1) is the port body, with the upper chamber (2) and the middle chamber (3)
It has a three-tiered structure with a lower chamber (4) and a lower chamber (4). (5)
(6) is the drawer container inserted into the lower chamber (4), (6) is the first slider that partitions the upper chamber (2) and the middle chamber (3), and (7) is the middle chamber (3). and a second slider that partitions the lower chamber (4), (8) is the saturated gallicum (Ga) melt contained in the upper chamber (2), and (9) is the middle chamber (3).
) K is provided on the substrate on which epitaxial crystal growth is to be performed, aQ is the opening provided in the first slider (6) K, αυ is the opening provided in the second slider (7), (2
) is provided on the first slider (6), and when the first slider (6) is moved in the direction of the arrow shown in the figure, the substrate (9) is placed in the middle chamber (3) in the second state with a time delay. )
A saturated Ga melt (3) is placed in the upper chamber (2), and this port is placed in a growth furnace to raise the temperature. After the port reaches equilibrium at a predetermined temperature, by moving the first slider (6) in the direction of the arrow, the opening (1G) connects the upper chamber (2) and the middle chamber (3). Through this, the saturated Ga melt (8) flows into the middle chamber (3) and immerses the substrate (9).In this state, the growth furnace is slowly cooled to cool the substrate (9). ) to obtain epitaxial crystal growth.During this epitaxial growth, the saturated Ga melt (3)
It is connected through Q to the inside of the upper chamber (2) and the inside of the middle chamber (3). After the epitaxial growth is completed, move the WJl slider (6) in the direction of the arrow and
The second slider (7) is moved by the shaped plate (2), the middle chamber (3) and the lower chamber (4) are communicated through the opening αυ, and the saturated Ga melt (8) is drawn out and placed in a container. (Let it flow into the 5th tank.

[Problem that the invention seeks to solve]

As described above, the conventional epitaxial growth apparatus has a three-stage structure, requires two sliders, and is large and complex.Firstly, before the start of epitaxial growth, a chamber for storing saturated melt for crystal growth is required. However, since the chambers for accommodating the saturated melt for crystal growth are different after the epitaxial growth is completed, there is a problem in that preparations for repeated epitaxial growth are complicated.

This invention has been made to solve the above-mentioned problems, and aims to provide a liquid phase epitaxial crystal growth apparatus that is simple in structure and operation.

[Failure to solve the problem]

In the liquid phase epitaxial crystal growth apparatus according to the present invention,
The port body has a two-stage structure, the chamber for storing the saturated melt of the substance to be crystal grown before the start of epitaxial growth and the chamber for storing the button after the epitaxial growth is completed are the same, and there is only one slider.

[Effect]

The upper chamber of the port body is a crystal growth chamber, the lower chamber is a saturated melt storage chamber, the lower chamber is provided with an L-shaped slider, and this L-shaped slider is slid, thereby creating a partition between the upper chamber and the lower chamber. The saturated melt is freely moved between the two chambers through the openings at the ends of the plate.
The figure is a cross-sectional view taken along the line ■-■, and the port body has a two-stage structure: an upper chamber (A) and a lower chamber (G). (C) is a partition plate that separates the upper chamber (A) from the lower chamber (2), and has an opening at one end. The pen is a vertical plate (2ea,
) with an L-shaped slider, the upper part is a substrate holder for epitaxial crystal growth, and (4) is a G-shaped slider with a substrate holder (goods).
(a) is a slatted opening for pouring the saturated melt; (8) is the saturated Ga melt; (9) is the substrate on which the epitaxial crystal is to be grown.

Incorporate an L-shaped slider holder into the ρ-donoport body, pour the Ga-saturated melt (3) into the lower chamber (transfer), and create a partition plate (c) that separates the upper chamber holder from the lower chamber holder. A substrate holder for epitaxial crystal growth, in which a substrate (9) for epitaxial crystal growth is set, is incorporated into the port body ■υ.

Now, the operation of this embodiment device is as follows:
When moved in the direction of the arrow (A), the Ga-saturated melt (8) in the lower chamber reaches the opening (A) at one end of the partition plate (to).
It flows into the upper chamber (A) through the . The L-shaped slider is moved to a position where its vertical plate (26a) closes the opening (support) at one end of the partition plate (c) from below. The Ga saturated melt (3) that has flowed into the upper chamber @ is deposited on the bottom of the substrate holder for epitaxial crystal growth, in which the epitaxial crystal growth substrate (9) held in the upper chamber (A) is set. The solid content of the Ga-saturated melt (3) is removed by the opening (7) K provided in the opening (7), and the epitaxial crystal growth substrate (9) is immersed therein. When the epitaxial crystal growth on the substrate (9) is completed by slow cooling, the L-shaped slider (to) is moved in the direction of the arrow (B), and the partition plate 174 is moved.
Open the hole (2) in the hole (c) and connect the substrate holder (
b) Ga saturated melt (8) is allowed to flow into the lower chamber (b) through the open hole in the bottom. Ga saturated melt (8
The top surface of the partition plate is sloped so that water can flow in quickly.

In this way, an epitaxial crystal growth layer having a mirror surface can be obtained on the substrate (9), and the structure of the port can be simplified. Although epitaxial crystal growth has been exemplified, it goes without saying that it can also be used for other types of crystal growth.

〔Effect of the invention〕

As explained above, (1) the liquid phase epitaxial crystal growth apparatus according to the present invention has a two-stage structure that has a partition plate that partitions the upper chamber and the lower chamber of the port body and an L-shaped slider, simplifying the structure. In addition, the only difference between before and after crystal growth is that the crystal has grown on the substrate, and the next crystal can be set by simply replacing the substrate holder with the substrate set. Growth can be performed immediately, reducing time, and the processing capacity can be increased if the device is of the same size.

[Brief explanation of drawings]

FIG. 1 is a plan view showing the configuration of an embodiment of the present invention, and FIG.
The figure is a cross-sectional view taken along the line ■--■ in FIG. 1, and a third cross-sectional view. In the figure, (8) is the saturated melt, (9) is the substrate, (c)
is the port body, ni) is the upper chamber, work is the lower chamber, (to)
is a partition plate, (4) is a hole, (a) is an L-shaped slider, (
26a) is its vertical plate. Note that the same reference numerals in each figure indicate the same or corresponding parts. Procedural amendment □8ゎ Station h16 Mr. Commissioner of the Patent Office V-shin 1, Indication of case Patent application No. 59-284766 3,
Person making the amendment Representative Hitoshi Katayama, Department 4, Agent 5, Drawing subject to amendment 6, Contents of amendment Figures 1 and 2 of the drawings will be corrected as shown in the attached sheet. 7. At least 1 copy of attached document catalog drawings (Figures 1 and 2)

Claims (1)

[Claims] (1) A port body having a lower chamber for storing a saturated melt of a substance to be crystal-grown, and an upper chamber for accommodating a substrate on the surface of which the crystal is to be epitaxially grown, the lower chamber and the upper chamber; an L-shaped slider having a partition plate having an opening at one end that partitions the chambers and communicating the two chambers, and a vertical plate that can slide the lower chamber horizontally along its vertical inner circumferential wall; In a prepared state, the vertical plate of the slider is located at the end of the lower chamber opposite to the side with the opening of the partition plate, and in this state, the saturated melt is poured into the lower chamber. During epitaxial growth, the slider is slid so that the vertical plate is drawn toward the end of the partition plate on the side where the openings are provided, and the saturated melt is delivered to the upper chamber to perform epitaxial growth. After completion of the liquid phase epitaxial crystal growth apparatus, the slider is returned to the preparatory state position, and the saturated melt that has been fed to the upper chamber is returned to the lower chamber. .