JPS61102625A - Optical shutter array - Google Patents

Optical shutter array

Info

Publication number
JPS61102625A
JPS61102625A JP22462684A JP22462684A JPS61102625A JP S61102625 A JPS61102625 A JP S61102625A JP 22462684 A JP22462684 A JP 22462684A JP 22462684 A JP22462684 A JP 22462684A JP S61102625 A JPS61102625 A JP S61102625A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
optical shutter
transparent
shutter array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22462684A
Other languages
Japanese (ja)
Inventor
Shigeki Hoshino
茂樹 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22462684A priority Critical patent/JPS61102625A/en
Publication of JPS61102625A publication Critical patent/JPS61102625A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To operate shutters independently by providing an insulating layer between two electrodes on a transparent substrate and providing an opaque electrode which connects with one electrode on the insulating layer. CONSTITUTION:A transparent electrode ITO is provided on a ceramic PLZT substrate 11 by sputtering and etched chemically to form a transparent electrode 14 and an earth electrode 12. The insulating film 13 is provided between the two electrodes 12 and 14 and on the electrode 12. Then, the opaque electrode 15 of Al is vapor-deposited thereupon and connected to the transparent electrode 14. A voltage V0 is applied to put two shutters in independent operation.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は電気光学効果を有する透明セラミックスを用い
た光シャッタアレイに関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical shutter array using transparent ceramics having an electro-optic effect.

(従来技術とその問題点) 従来、透明な電気光学セラミックスとしてPL&Tと呼
ばれているものがよく知られている。このPLITでは
、−次電気光学効果、二次電気光学効果、電気メモリ効
果をその組成比によって選択することかできる。しかし
、−次電気光学効果では電界に対する屈折率の変化が少
ないために低電圧駆動が困難であり、メモリ効果では屈
折率の変化が残留するためにナイスプレイや光シャッタ
には応用されにくい。
(Prior art and its problems) Conventionally, a transparent electro-optic ceramic called PL&T is well known. In this PLIT, the -order electro-optic effect, the second-order electro-optic effect, and the electric memory effect can be selected depending on their composition ratios. However, in the -order electro-optic effect, low voltage driving is difficult because there is little change in the refractive index with respect to the electric field, and in the memory effect, the change in the refractive index remains, so it is difficult to apply it to Nice Play or optical shutters.

現在のところ、ティスプレィや光スィッチに対しては二
次電気光学効果を示すPLOT 9165/35と呼ば
れている9aL%のランタンを含んだ55mo 1チの
pbZrQ8.35mo1%のPbTiOsの組成のも
のが多く使用されている。このPL2T 9165/3
5を用いたディスプレイ、光シャッタの特長として  
゛は、固体であることと高速スイッチングが可能である
ことである。このためこれからの発展が予想されている
。従来、ディスプレイや光シャッタとしてPL2T 9
165/35のような二次電気光学材料を応用する場合
には、電極をつけたセラミックスを2枚の偏光板ではさ
む溝造をとる必要がある。
Currently, for displays and optical switches, a product with a composition of 55 mo 1 inch pbZrQ 8.35 mo 1% PbTiOs containing 9aL% lanthanum, which is called PLOT 9165/35, which exhibits a secondary electro-optic effect, is used. Used a lot. This PL2T 9165/3
Features of displays and optical shutters using 5.
The main advantages are that it is a solid state and that high-speed switching is possible. Therefore, future development is expected. Conventionally, PL2T 9 was used as a display or optical shutter.
When applying a secondary electro-optic material such as 165/35, it is necessary to use a groove structure in which ceramics with electrodes are sandwiched between two polarizing plates.

もし、偏光板の偏光方向が互いiこ直交している場合に
は、半波長電圧と呼はれる電圧 Vo =d (’  ) ’/” n3・R−2 で透過光強度が最大となり、電圧が印加されている電極
間では明るく、そうでない部分は暗い。
If the polarization directions of the polarizing plates are orthogonal to each other, the transmitted light intensity reaches its maximum at a voltage Vo = d (' ) '/''n3・R-2, which is called the half-wave voltage, and the voltage The area between the electrodes where the voltage is applied is bright, and the area where it is not is dark.

ここで、dは電極間距離、λは光の波長、nはPLL ITの屈折率、Rは二次電気光学係数、tは透明セラミ
ックスの厚さである。一方、偏光板の偏光方向が互いに
平行な場合には、逆に半波長電圧で電圧印加された電極
間では暗く、そうでない部分は明るい。
Here, d is the distance between the electrodes, λ is the wavelength of light, n is the refractive index of the PLL IT, R is the second-order electro-optic coefficient, and t is the thickness of the transparent ceramic. On the other hand, when the polarization directions of the polarizing plates are parallel to each other, the parts between the electrodes to which a half-wavelength voltage is applied are dark, and the other parts are bright.

二次電気光学効果を利用するためには、電界を基板に平
行に加えなければならないので、従来は第2図(a) 
、 (b)に示したような電極配置となっている。第2
図(a)に示した電極配置では、たとえば電源と電極1
〜3をオン・オフするスイッチS、〜S。
In order to utilize the secondary electro-optic effect, an electric field must be applied parallel to the substrate, so conventionally, as shown in Figure 2(a).
, The electrode arrangement is as shown in (b). Second
In the electrode arrangement shown in Figure (a), for example, the power supply and electrode 1
Switches S, ~S that turn on and off ~3.

のうちスイッチSI+L3が開放状態でスイッチS2が
短絡されている場合を考えると、電極2には電圧V。(
半波長電圧)か加1)っており、電極1.3は零電位と
なる。このような条件下では、セラミックス内に加わる
電界は第2図(at中に示した矢印の方向に生じ、透明
電極2と透明アース電極12間及び透明電極2と隣りの
光シャッタの透明アース電極12の間の2つの領域にお
いて、同時に電界が発生するので動作領域16において
電気光学効果が現われる。故に、透明セラミックス基板
11をはさんだ2枚の偏光板の偏光方向か直交している
場合(こは、両方の領域とも光が透過、各光シャッタを
独立に動作させることはできない。
Considering the case where the switch SI+L3 is open and the switch S2 is short-circuited, the voltage V is applied to the electrode 2. (
A half-wave voltage (1) is applied, and the electrodes 1.3 are at zero potential. Under these conditions, an electric field applied within the ceramic is generated in the direction of the arrow shown in FIG. Since an electric field is generated simultaneously in the two regions between 12 and 12, an electro-optic effect appears in the operating region 16. Therefore, if the polarization directions of the two polarizing plates sandwiching the transparent ceramic substrate 11 are orthogonal (this In this case, light is transmitted through both areas, and each optical shutter cannot be operated independently.

以上のことを避けるためには第2図(blに示すように
各光シヤツタ電極と隣接する光シヤツタ電極を十分離す
必要があるが、そのために光シャッタとに多数のアレイ
を形成することができなかった。
In order to avoid the above, it is necessary to space each optical shutter electrode sufficiently far from the adjacent optical shutter electrode as shown in Figure 2 (bl), but for this purpose it is not possible to form a large number of arrays with optical shutters. There wasn't.

(発明の目的) 本発明は平面上に複数個の光シャッタを形成し独立に各
光シャッタを動作させることを可能にした高密度光シャ
ッタアレイを提供することにある。
(Objective of the Invention) An object of the present invention is to provide a high-density optical shutter array in which a plurality of optical shutters are formed on a plane and each optical shutter can be operated independently.

(発明の構成) 本発明は電気光学効果を有する透明セラミック基板と、
該セラミック基板上に所定の間隔をおいて形成される複
数の電極部とを備えた光シャッタアレイにおいて、各電
極部は前記透明セラミック基板上に近接して形成される
2つの電極と、少なくともこの2つの電極間に形成され
る絶縁層と、該絶I&層上に形成交れ前記2つの電極の
うち一方の電極のみと接続している不透明電極とから構
成されていることを特徴とする光シャッタアレイである
(Structure of the Invention) The present invention provides a transparent ceramic substrate having an electro-optic effect,
In an optical shutter array comprising a plurality of electrode sections formed on the ceramic substrate at predetermined intervals, each electrode section includes two electrodes formed close to each other on the transparent ceramic substrate, and at least two electrode sections formed on the transparent ceramic substrate at predetermined intervals. A light comprising an insulating layer formed between two electrodes, and an opaque electrode formed on the insulation layer and connected to only one of the two electrodes. This is a shutter array.

(構成の詳細な説明) 本発明は上述の構成をとることにより、従来技術の問題
点を解決した。
(Detailed Description of Configuration) The present invention solves the problems of the prior art by adopting the above-described configuration.

まず、電気光学効果を有する透明セラミックスの両面を
鏡面研磨し、その上に各光シヤツタ動作領域16に比べ
て短い間隔で2つの電極、望ましくは2つの透明電極を
スパッタ、蒸着あるいはCVDで形成する。さらに近接
する2つの電極間が短絡しないようにするためにこの電
極の間、又はこの電極の間と少なくとも一方の電極を覆
うように絶縁薄膜をスパック、蒸着あるいはCVD等に
よって形成する。その後、前記2つの電極の間で前記絶
縁薄膜上に、一方の!極のみと接するように不透明電極
をスパック、蒸着あるい1.+ CV p等によって形
成する。次に、各電極部に引き出し電極が接続されるよ
うに加工する。
First, both sides of transparent ceramics having an electro-optic effect are mirror-polished, and two electrodes, preferably two transparent electrodes, are formed thereon at a shorter interval than each optical shutter operating area 16 by sputtering, vapor deposition, or CVD. . Further, in order to prevent short circuit between two adjacent electrodes, an insulating thin film is formed between the electrodes, or between the electrodes and covering at least one of the electrodes by spucking, vapor deposition, CVD, or the like. Thereafter, one of the two electrodes is placed on the insulation thin film between the two electrodes. Spuck, evaporate or 1. opaque electrode in contact with only the pole. + CV p, etc. Next, processing is performed so that an extraction electrode is connected to each electrode portion.

以上のように電極を形成することによって透明電極で構
成される各光シャッタにおいて独立に光をオン・オフす
ることができ、平面上に多数個の光シャッタアレイが形
成できることになる。
By forming the electrodes as described above, it is possible to independently turn on and off light in each optical shutter composed of transparent electrodes, and a large number of optical shutter arrays can be formed on a plane.

(実施例) 以下、本発明の実施例について図面を参照して詳細に説
明する。
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第1図(a) 、 (b)は本発明の実施例における光
シャッタアレイを構成する電極の一部分を示した図で透
明セラミックスPIJT 9165/35基板11上に
透明電極ITOをスパッタでつけ、化学的エツチングに
よって透明電極14とアース電極12を形成した。後に
不透明電極15をつける時に隣接する電極間が短絡しな
いように前記2つの透BA電極の間及びアース1rlL
極12上にスパッタ3こよってSIO□からなる絶縁薄
膜」3をつけて、フォトリンクラフィ技術Iこよって部
分的に残るように加工した。
FIGS. 1(a) and 1(b) are diagrams showing a part of the electrodes constituting the optical shutter array in the embodiment of the present invention, in which a transparent electrode ITO is sputtered onto a transparent ceramic PIJT 9165/35 substrate 11 and A transparent electrode 14 and a ground electrode 12 were formed by targeted etching. In order to avoid a short circuit between adjacent electrodes when attaching the opaque electrode 15 later, there is a gap between the two transparent BA electrodes and the ground 1rlL.
An insulating thin film 3 made of SIO□ was applied on the pole 12 by sputtering 3 and processed using photolinkage technique I so that it remained partially.

さらにその上からAt電極を不透明電極15として蒸着
でつけ、フォトリンクラフイ技術によって不用な領域の
電極間を覆って、かつ片側の透明電極14に接続される
ように形成した。
Furthermore, an At electrode was attached as an opaque electrode 15 by vapor deposition from above, and was formed by photolink rough-fi technique so as to cover the unnecessary area between the electrodes and to be connected to the transparent electrode 14 on one side.

第1図(b)は第1図(a)の断面を示したものである
FIG. 1(b) shows a cross section of FIG. 1(a).

用いたセラミックスの厚さは300μm、透明電極IT
Oの幅は50μm、電極間隔150μmで、隣接する電
極の間は50μmの幅がある。その上に5i02薄膜を
1μm程度スパッタで形成し、その上tこ100μm程
度の幅をもつ不透明な引き出しAt電極を形成した。こ
れらの値は絶縁破壊が起きない範凹で小さくすることが
でき、さらに微細な光シャッタアレイも可能である。
The thickness of the ceramic used was 300 μm, and the transparent electrode IT
The width of O is 50 μm, the electrode interval is 150 μm, and there is a width of 50 μm between adjacent electrodes. A 5i02 thin film of about 1 μm was formed thereon by sputtering, and an opaque lead-out At electrode with a width of about 100 μm was formed thereon. These values can be reduced within a range where dielectric breakdown does not occur, and even finer optical shutter arrays are also possible.

(以上のような構成をとることにより、約150Vo 
1 tの電圧で各党シャッタを独立こ動作させることが
でき、従来のものに比較して、十分高密度でかつそれぞ
れが独立に動作する光シャッタアレイが形成できた。
(By adopting the above configuration, approximately 150Vo
Each shutter can be operated independently with a voltage of 1 t, and an optical shutter array with sufficiently high density and in which each shutter operates independently can be formed compared to the conventional one.

(発明の効果) 本発明によって形成された構造の光シャッタを用いるこ
とによって、独立にかつ高密度に光シャッタをアレイ状
に配置することかできるため、高性能の光シャッタアレ
イが製作できるようになる。
(Effects of the Invention) By using the optical shutter having the structure formed according to the present invention, the optical shutters can be arranged independently and densely in an array, so that a high-performance optical shutter array can be manufactured. Become.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a) 、 (b)は本発明による光シャッタア
レイの実施例を示した図。 第2図(1) 、 (b)は従来用いられている光シャ
ッタアレイの構造を示した図である。 図において11は透明セラミック基板、12はアース電
極、13は絶縁薄膜、14は透明電極、15は不透明電
極、16は動作領域。 代理人、−、:□l−「・・」原   晋、第1図 (b) !2図 (b)
FIGS. 1(a) and 1(b) are diagrams showing an embodiment of an optical shutter array according to the present invention. FIGS. 2(1) and 2(b) are diagrams showing the structure of a conventionally used optical shutter array. In the figure, 11 is a transparent ceramic substrate, 12 is a ground electrode, 13 is an insulating thin film, 14 is a transparent electrode, 15 is an opaque electrode, and 16 is an operating area. Agent, -, :□l- "..." Susumu Hara, Figure 1 (b)! Figure 2 (b)

Claims (1)

【特許請求の範囲】[Claims] 電気光学効果を有する透明セラミック基板と、該セラミ
ック基板上に所定の間隔をおいて形成される複数の電極
部とを備えた光シャッタアレイにおいて、各電極部は前
記透明セラミック基板上に近接して形成される2つの電
極と、少なくともこの2つの電極間に形成される絶縁層
と、該絶縁層上に形成され前記2つの電極のうち一方の
電極のみと接続している不透明電極とから構成されてい
ることを特徴とする光シャッタアレイ。
In an optical shutter array comprising a transparent ceramic substrate having an electro-optic effect and a plurality of electrode sections formed on the ceramic substrate at predetermined intervals, each electrode section is arranged close to the transparent ceramic substrate. Two electrodes formed, an insulating layer formed at least between these two electrodes, and an opaque electrode formed on the insulating layer and connected to only one of the two electrodes. An optical shutter array characterized by:
JP22462684A 1984-10-25 1984-10-25 Optical shutter array Pending JPS61102625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22462684A JPS61102625A (en) 1984-10-25 1984-10-25 Optical shutter array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22462684A JPS61102625A (en) 1984-10-25 1984-10-25 Optical shutter array

Publications (1)

Publication Number Publication Date
JPS61102625A true JPS61102625A (en) 1986-05-21

Family

ID=16816652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22462684A Pending JPS61102625A (en) 1984-10-25 1984-10-25 Optical shutter array

Country Status (1)

Country Link
JP (1) JPS61102625A (en)

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