JPS6096919A - Overcurrent detection circuit of electronic switch - Google Patents

Overcurrent detection circuit of electronic switch

Info

Publication number
JPS6096919A
JPS6096919A JP58205666A JP20566683A JPS6096919A JP S6096919 A JPS6096919 A JP S6096919A JP 58205666 A JP58205666 A JP 58205666A JP 20566683 A JP20566683 A JP 20566683A JP S6096919 A JPS6096919 A JP S6096919A
Authority
JP
Japan
Prior art keywords
transistor
terminal
resistor
circuit
overcurrent detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58205666A
Other languages
Japanese (ja)
Other versions
JPH0262050B2 (en
Inventor
Ikuo Nishimoto
育夫 西本
Shinichi Kuno
久野 真一
Shigeru Aoshima
滋 青島
Giichi Kawashima
川島 義一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azbil Corp
Original Assignee
Azbil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azbil Corp filed Critical Azbil Corp
Priority to JP58205666A priority Critical patent/JPS6096919A/en
Publication of JPS6096919A publication Critical patent/JPS6096919A/en
Publication of JPH0262050B2 publication Critical patent/JPH0262050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To decrease a residual voltage at ON state as an electronic switch by controlling the output state of a controller with the output of an overcurrent detection circuit and controlling a current switching element of a load current depending on this output state. CONSTITUTION:The emitter of a transistor (TR)22 is connected to the terminal of a power supply 19 via a resistor (R) 33 and the emitter of a TR23 is connected to the other terminal of the power supply 19 via a resistor R31. Then collectors of both the TRs 22, 23 are connected. Emitters of TRs 24, 25 are connected respectively to the power supply 19 and the collectors are connected together. Then the emitter and collector of a TR21 are connected respectively to the power supply 19 via a current source 20. Then the TRs 21, 22 and 24, and the TRs 23, 25 are constituted to be current mirror circuits respectively. A signal output terminal is provided to the connecting point G between the TRs 24 and 25, the terminal is connected to the controller 17 so as to control the output state of the controller 17.

Description

【発明の詳細な説明】 この発明は電子スイッチたとえば近接スイッチの過電流
検出回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an overcurrent detection circuit for electronic switches, such as proximity switches.

従来この種の過電流検出回路は第1図および第2図に示
すように出力トランジスタTr1のエミッタにエミッタ
抵抗亀を挿入し、この両端の電圧Vr1を過電流検出用
のトランジスタTr2によって検出し、これにより過電
流を検出するのがもつとも簡単な方法であり、かつひじ
ように多くの用途に使用されている。この方法は簡単に
実現しうる反面08時の出力端子残り電圧がひじように
大きくなってしまう欠点を有していた。すなわちトラン
ジスタTrlのON時残り電圧Vonは出力電流値とト
ランジスタTr1の出力電流容量によるが、今仮にVa
nをVan = 0.2 (V ) 、出力電流It=
150(mA)とし、これに過電流検出回路を含め、2
00 (m A )以上の電流が流れたとき、これを過
電流とする。そしてトランジスタTryのベース−エミ
ッタ間電圧Vbeが0.7(V)以上を検出されるとエ
ミッタ抵抗R1の値は となる。また出力電流It=:150 (mA )の時
のエミッタ抵抗R1の両端の電圧VrlはVrl ==
 35 X 0.15−0.525 (V 、]となり
、したがってトランジスタTrlとエミッタ抵抗R,の
直列回路の電圧Vxは Vx二Von + Vr、= 0.2−t−0,525
:0,725 (V:]となる。このように過過電流出
出回が挿入されたことにより、電子スイッチとしてのO
N時出力残り電圧は3倍以1となり、計算式から明らか
なように出力トランジスタTrlの出力電力容量を大き
くして、そのON時出力残り電圧Yonをいくら小さく
しても過電流検出回路を含めたON時出力残り電圧はほ
とんど低下しないという欠点があったまた従来の過電流
検出回路においてはトランジX タT r+のベース−
エミッタ間電圧が過電流検出電圧であったために大きな
負の温度係数を有していた。
Conventionally, this type of overcurrent detection circuit inserts an emitter resistor to the emitter of the output transistor Tr1 as shown in FIGS. This is a simple method for detecting overcurrent, and is used in many applications. Although this method can be easily implemented, it has the drawback that the remaining voltage at the output terminal at 8 o'clock becomes extremely large. That is, the remaining voltage Von when the transistor Trl is turned on depends on the output current value and the output current capacity of the transistor Tr1.
n is Van = 0.2 (V), output current It =
150 (mA), including the overcurrent detection circuit, 2
When a current of 00 mA or more flows, this is considered an overcurrent. When the base-emitter voltage Vbe of the transistor Try is detected to be 0.7 (V) or more, the value of the emitter resistance R1 becomes. Also, when the output current It=:150 (mA), the voltage Vrl across the emitter resistor R1 is Vrl ==
35 x 0.15-0.525 (V,], so the voltage Vx of the series circuit of transistor Trl and emitter resistor R, is Vx2 Von + Vr, = 0.2-t-0,525
:0,725 (V:]. By inserting the overcurrent output in this way, the O as an electronic switch
The remaining output voltage at N-time is more than 3 times 1, and as is clear from the calculation formula, no matter how much the output power capacity of the output transistor Trl is increased and the remaining output voltage Yon at ON-time is decreased, the overcurrent detection circuit is not included. In addition, in the conventional overcurrent detection circuit, the output residual voltage hardly decreases when the transistor is turned on.
Since the emitter voltage was the overcurrent detection voltage, it had a large negative temperature coefficient.

この発明はこのような従来の欠点を解消しようとするも
ので、この発明の第1の目的はトランジスタのベース−
エミッタ間電用により過電流を検出するものに比し、検
出電圧を小さくし、これによって電子スイッチの過電流
検出用抵抗を小さくし、いきおい電子スイッチとしての
ON時残り電圧を小さくしようとするものである。
This invention attempts to eliminate such conventional drawbacks, and the first purpose of this invention is to
Compared to those that detect overcurrent using an emitter voltage, the detection voltage is lowered, thereby reducing the overcurrent detection resistance of the electronic switch and reducing the remaining voltage when the electronic switch is turned on. It is.

またこの発明の第2の目的は同一の過電流検出回路によ
りカレントシンクおよびカレントソース両出力形式の過
電流を検出しうるようにするものである。
A second object of the present invention is to enable overcurrents of both current sink and current source output types to be detected by the same overcurrent detection circuit.

以下図によってこの発明の一実施例について説明する。An embodiment of the present invention will be described below with reference to the drawings.

第3図はこの発明における過電流検出回路を近接スイッ
チに適用したばあいの回路図で、この近接スイッチ10
は近接センサ用IC回路1と、このIC回路の出力電流
容量を補うための電流スイッチング素子26たとえば出
力トランジスタとで構成される。そしてそのIC回路1
は内部に発振00路2、コンパレータ3、積分回路4 
、コンパレータ5、出力回路6.定電圧回路7、電源リ
セット回路8、出力フントローラ14および過電流検出
回路16を有しており、出力回路6.電源リセット回路
8および出力コントローラ14により電子スイッチコン
トローラ17が構成される。また検出コイルし1%共振
コンデンサC3、感度調整用可変抵抗R22、側路コン
デンサc28、積分コンデンサ024、電源リセット用
コンデンサ025および負荷9などが外付けされる。
FIG. 3 is a circuit diagram when the overcurrent detection circuit according to the present invention is applied to a proximity switch.
1 is composed of a proximity sensor IC circuit 1 and a current switching element 26, such as an output transistor, for supplementing the output current capacity of this IC circuit. And the IC circuit 1
has internal oscillation 00 circuit 2, comparator 3, and integration circuit 4.
, comparator 5, output circuit 6. It has a constant voltage circuit 7, a power supply reset circuit 8, an output roller 14, and an overcurrent detection circuit 16, and the output circuit 6. The power supply reset circuit 8 and the output controller 14 constitute an electronic switch controller 17. Further, a detection coil, a 1% resonant capacitor C3, a sensitivity adjustment variable resistor R22, a bypass capacitor C28, an integrating capacitor 024, a power supply reset capacitor 025, a load 9, and the like are externally attached.

したがって検出コイルし、に対して金属体が接近または
離間することにより発振回路2が発振を開始または停止
し、出力回路6よす論理I、またはHの出力が得られる
Therefore, when a metal body approaches or separates from the detection coil, the oscillation circuit 2 starts or stops oscillating, and an output of logic I or H is obtained from the output circuit 6.

そして後述する過電流検出回路16は電流スイッチング
素子26と出力コントローラ14との間に設けられてい
る。
An overcurrent detection circuit 16, which will be described later, is provided between the current switching element 26 and the output controller 14.

第4図はこの発明の要部を示す回路図で、基本的に4個
のトランジスタすなわち第1のトランジスタ22、第2
のトランジスタ23、第3のトランジスタ24および第
4のトランジスタ25と、抵抗31.33と、電流源2
oと、トランジスタ21とからなるブロックにより過電
流検出回路16が構成される。ダイオード27と抵抗3
5により過電圧保護回路18が構成され、ノード41に
大きな電圧が加わったばあいに過電流検出回路l6を保
護する。この過電圧保護回路はカレントシンク用のもの
であるが、ダイオード28および抵抗36で構成される
回路はカレントソース用の過電圧保護回路である。19
は電源である。なお電流スイッチング素子26は負荷9
に流れる電流を制御するものでたとえばトランジスタに
より構成される。各トランジスタ22.23と各抵抗3
1.33との接続点には接続端子an Cが引出され、
トランジスタ24と25との接続点に信号出方端子Gが
設けられ、この出力端子はさらにトランジスタ26を制
御するコントローラ17の大刀端に接続され、これによ
ってコントローラ17の出力状態を制御するようにされ
ている。なお第4図において過電流検出回路16および
過電圧保護回路18がIC化される。
FIG. 4 is a circuit diagram showing the main part of the present invention, which basically consists of four transistors, namely a first transistor 22, a second transistor 22, and a second transistor.
transistor 23, third transistor 24, and fourth transistor 25, resistor 31.33, and current source 2
The overcurrent detection circuit 16 is constituted by a block including the transistor 21 and the transistor 21. Diode 27 and resistor 3
5 constitutes an overvoltage protection circuit 18, which protects the overcurrent detection circuit 16 when a large voltage is applied to the node 41. This overvoltage protection circuit is for a current sink, but the circuit composed of the diode 28 and the resistor 36 is an overvoltage protection circuit for a current source. 19
is the power supply. Note that the current switching element 26 is connected to the load 9
It controls the current flowing through the circuit, and is made up of, for example, a transistor. Each transistor 22.23 and each resistor 3
A connection terminal an C is pulled out to the connection point with 1.33,
A signal output terminal G is provided at the connection point between the transistors 24 and 25, and this output terminal is further connected to the main end of the controller 17 that controls the transistor 26, thereby controlling the output state of the controller 17. ing. In FIG. 4, the overcurrent detection circuit 16 and the overvoltage protection circuit 18 are integrated into ICs.

今、第4図において電流源2oからの電流I0を■o=
5〔μA〕、抵抗31.33の抵抗値R31* R33
を几s+=Rss= 10 [KΩ]とすると7−ド4
1および42の電圧V41およびVatが過電流検出電
圧となりその値はV、、=V、、= 1.XR,、= 
I。XR5,= 5 X 10 = 50(mV)とな
る。なぜならばノード41.42ともにオープンのばあ
い、トランジスタ24と25がバランスしており、出力
ノード46は臨界状態にある。
Now, in Fig. 4, the current I0 from the current source 2o is ■o=
5 [μA], resistance value of resistor 31.33 R31* R33
If 几s+=Rss=10 [KΩ], then 7-do4
The voltages V41 and Vat of 1 and 42 become overcurrent detection voltages, and their values are V, , =V, , = 1. XR,,=
I. XR5, = 5 X 10 = 50 (mV). This is because when nodes 41 and 42 are both open, transistors 24 and 25 are balanced and output node 46 is in a critical state.

今、ノード41が出力電流検出用抵抗R,に接続された
ばあい、この抵抗の両端に発生する電圧が50(mV)
より小さいと、抵抗35を通じノード41から抵抗R4
の方へ電流が流れ出し、このため抵抗32に流れる電流
が減少し、トランジスタ25のエミッタ電圧が下がり、
トランジスタ24と25のバランスがくずれ、ノード4
6の電位はLとなる。このとき電子スイッチコントロー
ラ17の出力はたとえばHとなり、電流スイッチング素
子26はオン状態にある。
Now, when the node 41 is connected to the output current detection resistor R, the voltage generated across this resistor is 50 (mV).
If it is smaller, resistor R4 is connected from node 41 through resistor 35.
A current starts to flow toward the resistor 32, so the current flowing through the resistor 32 decreases, and the emitter voltage of the transistor 25 decreases.
Transistors 24 and 25 become unbalanced, and node 4
The potential of 6 becomes L. At this time, the output of the electronic switch controller 17 becomes, for example, H, and the current switching element 26 is in the on state.

また何らかの原因で電流スイッチング紮子26に流れる
電流が所定の値を越え石と抵抗R,の両端に生じる電圧
が50(mV)を越え、ノード46の電圧はHとなる。
Further, for some reason, the current flowing through the current switching ligature 26 exceeds a predetermined value, and the voltage generated across the stone and the resistor R exceeds 50 (mV), and the voltage at the node 46 becomes H.

このとき電子スイッチコントローラ17の出力はたとえ
ばLとなり、電流スイッチング素子26は実質的にオフ
状態となる。このため抵抗島に流れる電流は減少し、い
きおいノード41の電位が下り、ノード46の電位も下
る。やがてノード46の電位がLに反転すると電子スイ
ッチコントローラ17の出方はHとなり、電流スイッチ
ング素子26はオンとなる。
At this time, the output of the electronic switch controller 17 becomes, for example, L, and the current switching element 26 is substantially turned off. Therefore, the current flowing through the resistance island decreases, the potential of the energizing node 41 decreases, and the potential of the node 46 also decreases. When the potential of the node 46 eventually reverses to L, the output of the electronic switch controller 17 becomes H, and the current switching element 26 is turned on.

さらに抵抗R9Iの電圧が50(mV)のときは抵抗3
5には電流が流れず、これがスレッシュホールド電圧と
なる。
Furthermore, when the voltage of resistor R9I is 50 (mV), resistor 3
No current flows through 5, which becomes the threshold voltage.

このように抵抗R1の両端に生じる電圧が50(mV)
を越えたとき、過電流検出回路16がその点を検出する
In this way, the voltage generated across the resistor R1 is 50 (mV)
When the overcurrent detection circuit 16 exceeds this point, the overcurrent detection circuit 16 detects that point.

以上の説明はカレントシンクの出方形式の例であるが、
カレントソースの出方形式のばあいにもノード46は過
電流検出時にHとなる。カレントソースの出力形式の例
を第5図に示す。この図においては外部接続用端子Cが
使用される。
The above explanation is an example of how the current sink appears,
In the case of the current source output type, the node 46 becomes H when an overcurrent is detected. An example of the output format of the current source is shown in FIG. In this figure, external connection terminal C is used.

また第6図に示すものは第5図と同様にカレントソース
の出力形式の回路であるが、第5図に示す回路と異なる
点は電流スイッチング素子26をPNP形トランジスタ
により構成したことであるなお第7図はカレントミラー
回路の変形例を示すもので同図(a)に対して同図(b
lおよび(c)に示す変形例がよく知られている。
The circuit shown in FIG. 6 is a current source output type circuit similar to that shown in FIG. 5, but the difference from the circuit shown in FIG. 5 is that the current switching element 26 is composed of a PNP transistor. FIG. 7 shows a modified example of the current mirror circuit.
The modifications shown in (c) are well known.

第4図において検出電圧を50 (m V )とし、過
電流を200〔n1A〕とすると抵抗R4は0mV ”” 20 m A −” 2” 〔Ω〕となり、した
がって出力電流J1= 150 (m^〕におけるON
時残り電圧Vxは Vx =v(B1 +Vr、 :=:0.2 +〇、2
5 X 0115::0.2 +〇、0375:0.2
375 (V 〕となり、従来のものに比し大きな改善
が見られるこの計算例から明らかなように従来例ではト
ランジスタTr1のON時残り電圧Vonに比し抵抗8
.1の両端電圧Vr、がかなり大きかったが、この発明
ニヨレば抵抗1’L、の両端電圧Vr(の方がトランジ
スタ26のON時残り電圧VOQに比しがなり小さくな
り、したがってON時残り電圧Vonを小さくするよう
に容量の大きなトランジスタを使用すれげさらに出力端
子ON時残り電圧Vxを小さくすることも可能である。
In Fig. 4, when the detection voltage is 50 (mV) and the overcurrent is 200 [n1A], the resistance R4 becomes 0mV 20 mA - 2" [Ω], and therefore the output current J1 = 150 (m^ ] ON
The remaining voltage Vx is Vx =v(B1 +Vr, :=:0.2 +〇,2
5 X 0115::0.2 +○, 0375:0.2
375 (V ), which is a great improvement compared to the conventional one.As is clear from this calculation example, in the conventional example, the resistance 8
.. The voltage Vr across the resistor 1'L was quite large, but in this invention, the voltage Vr across the resistor 1'L becomes smaller than the remaining voltage VOQ when the transistor 26 is turned on, and therefore the remaining voltage when the transistor 26 is turned on. In addition to using a transistor with a large capacity to reduce Von, it is also possible to reduce the remaining voltage Vx when the output terminal is turned on.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は従来の過電流検出回路を示す回路
図、第3図はこの発明における過電流検出回路を近接ス
イッチに適用したばあいのブロック図、第4図はこの発
明における過電流検出回路の一実施例を示す回路図、第
5図はこの発明の第2の実施例を示す回路図、第6図は
この発明の第3の実施例を示す回路図、第7図はカレン
トミラー回路の変形例を示す回路図である。 1・・・IC回路、2・・・発振回路、3・・・コンパ
レータ、4・・・積分回路、5・・・コンパレータ、6
・・・出力回路、7・・・定電圧回路、8・・・電源リ
セット回路、9・・・負荷、xo・・・スイッチ、14
・・・出力コントローラ、し、・・・検出コイルs ”
n・・・可変抵抗、C1・・・共振コンデンサs C2
4・・・積分コンデンサ、C2,・・・コンデンサ、1
6・・・過電流検出回路、17・・・電子スイッチコン
トローラ、1B・・・過電圧保護回路、19・・・電源
、20・・・電流源、21〜25・・・トランジスタ。 26・・・電流スイッチング素子、27・・・ダイオー
ド、28・・・ダイオード、31.:33,3!’i・
・抵抗、BI・・・抵抗、41.42・・・ノード、4
6・・・出力ノード。 特許出願人 山武ハネウェル株式会社 第4図 第5図 8 第6図 18 第7図 (a) 手続補正書(方式) %式% 1、事件の表示 特願昭58−205666号2、発明
の名称 電子スイッチの過電流検出回路 3、補正をする者 図 面 7、補正の内容 図面の浄書(内容に変更なし)
1 and 2 are circuit diagrams showing conventional overcurrent detection circuits, FIG. 3 is a block diagram when the overcurrent detection circuit according to the present invention is applied to a proximity switch, and FIG. 4 is a circuit diagram showing the overcurrent detection circuit according to the present invention. A circuit diagram showing one embodiment of the detection circuit, FIG. 5 is a circuit diagram showing a second embodiment of this invention, FIG. 6 is a circuit diagram showing a third embodiment of this invention, and FIG. 7 is a circuit diagram showing a third embodiment of this invention. FIG. 7 is a circuit diagram showing a modification of the mirror circuit. DESCRIPTION OF SYMBOLS 1...IC circuit, 2...Oscillation circuit, 3...Comparator, 4...Integrator circuit, 5...Comparator, 6
... Output circuit, 7... Constant voltage circuit, 8... Power supply reset circuit, 9... Load, xo... Switch, 14
...output controller, ...detection coil s"
n...variable resistor, C1...resonant capacitor s C2
4... Integrating capacitor, C2,... Capacitor, 1
6... Overcurrent detection circuit, 17... Electronic switch controller, 1B... Overvoltage protection circuit, 19... Power supply, 20... Current source, 21-25... Transistor. 26... Current switching element, 27... Diode, 28... Diode, 31. :33,3! 'i・
・Resistance, BI...Resistance, 41.42...Node, 4
6...Output node. Patent applicant Yamatake Honeywell Co., Ltd. Figure 4 Figure 5 Figure 8 Figure 6 18 Figure 7 (a) Procedural amendment (method) % formula % 1. Indication of the case Japanese Patent Application No. 58-205666 2. Title of the invention Electronic switch overcurrent detection circuit 3, person making the correction Drawing 7, correction content drawing (no change in content)

Claims (1)

【特許請求の範囲】 +11 電源に対して負荷と、この負荷に流れる電流を
制御する電流スイッチング素子と、過電流検出抵抗を順
次直列に接続し、また電源の一方の端子に対して第1の
トランジスタのエミッタを抵抗を介して接続し、かつそ
のコレクタを電流源を介して電源の他方の端子にそれぞ
れ接続し、また電源の一方の端子に対して第2のトラン
ジスタのエミッタを抵抗を介して接続し、かつ電源の他
方の端子に対して第3のトランジスタのエミッタを抵抗
を介して接続し、さらに両トランジスタのコレクタをた
がいに接続し、また電源の一方の端子に対して第4のト
ランジスタのエミッタを接続し、かつ電源の他方の端子
に対して第5のトランジスタのエミッタを接続し、さら
に両トランジスタのコレクタをたがいに接続し、上記第
1のトランジスタ、第2のトランジスタおよび第4のト
ランジスタを、また上記第3のトランジスタと第5のト
ランジスタとを、それぞれカレントミラー回路を構成す
るように接続し、上記第2および第3のトランジスタと
上記各抵抗との接続点から接続端子を引出し、この端子
を上記電流スイッチング素子と上記過電流検出抵抗との
接続点に選択的に接続するとともに上記第4のトランジ
スタと上記第5のトランジスタとの接続点に信号出力端
子を設け、この出力端子を上記電流スイッチング素子を
制御するコントローラの入力端に接続し、このコントロ
ーラの出力状態を制御することを特徴とする電子スイッ
チの過電流検出回路。 (2)上記各接続端子の中の1つと、上記過電流検出抵
抗と上記電流スイッチング素子との接続点間に過電圧保
護回路を接続した特許請求の範囲第1項記載の電子スイ
ッチの過電流検出回路。
[Claims] +11 A load, a current switching element that controls the current flowing through the load, and an overcurrent detection resistor are connected in series to a power supply, and a first terminal is connected to one terminal of the power supply. The emitters of the transistors are connected via a resistor, and the collectors thereof are respectively connected via a current source to the other terminal of a power supply, and the emitter of a second transistor is connected to one terminal of the power supply via a resistor. the emitter of the third transistor is connected to the other terminal of the power source via a resistor, the collectors of both transistors are connected to each other, and the emitter of the third transistor is connected to the other terminal of the power source through a resistor; and the emitter of the fifth transistor is connected to the other terminal of the power supply, and the collectors of both transistors are connected to each other, and the emitters of the first transistor, the second transistor, and the fourth transistor are connected to each other. The transistor, the third transistor, and the fifth transistor are connected to each constitute a current mirror circuit, and a connection terminal is drawn out from a connection point between the second and third transistors and each of the resistors. , this terminal is selectively connected to the connection point between the current switching element and the overcurrent detection resistor, and a signal output terminal is provided at the connection point between the fourth transistor and the fifth transistor, and this output terminal An overcurrent detection circuit for an electronic switch, characterized in that the overcurrent detection circuit is connected to an input terminal of a controller that controls the current switching element, and controls an output state of the controller. (2) Overcurrent detection of the electronic switch according to claim 1, wherein an overvoltage protection circuit is connected between one of the connection terminals and the connection point between the overcurrent detection resistor and the current switching element. circuit.
JP58205666A 1983-10-31 1983-10-31 Overcurrent detection circuit of electronic switch Granted JPS6096919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58205666A JPS6096919A (en) 1983-10-31 1983-10-31 Overcurrent detection circuit of electronic switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58205666A JPS6096919A (en) 1983-10-31 1983-10-31 Overcurrent detection circuit of electronic switch

Publications (2)

Publication Number Publication Date
JPS6096919A true JPS6096919A (en) 1985-05-30
JPH0262050B2 JPH0262050B2 (en) 1990-12-21

Family

ID=16510673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58205666A Granted JPS6096919A (en) 1983-10-31 1983-10-31 Overcurrent detection circuit of electronic switch

Country Status (1)

Country Link
JP (1) JPS6096919A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0639894A1 (en) * 1993-08-18 1995-02-22 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Circuit for limiting the maximum current supplied to a load by a power transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482259U (en) * 1990-11-28 1992-07-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0639894A1 (en) * 1993-08-18 1995-02-22 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Circuit for limiting the maximum current supplied to a load by a power transistor

Also Published As

Publication number Publication date
JPH0262050B2 (en) 1990-12-21

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