JPS6096755A - Vapor deposition apparatus - Google Patents
Vapor deposition apparatusInfo
- Publication number
- JPS6096755A JPS6096755A JP20645183A JP20645183A JPS6096755A JP S6096755 A JPS6096755 A JP S6096755A JP 20645183 A JP20645183 A JP 20645183A JP 20645183 A JP20645183 A JP 20645183A JP S6096755 A JPS6096755 A JP S6096755A
- Authority
- JP
- Japan
- Prior art keywords
- cover
- air supply
- air
- container
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体ｍ造工程等で薄膜を形成する蒸着装置に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a vapor deposition apparatus for forming thin films in semiconductor manufacturing processes and the like.
従来例の構成とその問題点 第１図に従来における蒸着装置の概＃！ｒ信成を示す。Conventional configuration and its problems Figure 1 shows an overview of a conventional vapor deposition apparatus. r Indicates Shinsei.
この装置は、真空容ａ（１）内の下部にるつぼ（２）を
有する蒸着源本体＋３）が設けられると共に、真空容器
（１）内の上部に、被蒸着部材（以下、試料と称す）（
４）がるつぼ（２）に対向する位１ｄで保持部材（５）
を介して吊持されたもので、その蒸ｊｆを行なう１祭に
、排気ホー ） ＋６１よ）真空容器（１）内のを気が
排気される。この装置によると、構造が簡単でありなか
ら膜厚分布のばらつきの少ない試料を得ることができる
。しかし、第１図に示すように、排気ポート（６）及び
給気ボート（７）が真空容器（１）の下部に設けられて
いる場合、第２図に示すように、排気ポート（６）よシ
真空容器（１〕の内部の気体を排気する場合、矢印のよ
うな気流になシ塵埃が試料（４）に付着する。This apparatus is provided with a deposition source main body +3) having a crucible (2) at the lower part of the vacuum volume a(1), and a member to be deposited (hereinafter referred to as a sample) at the upper part of the vacuum vessel (1). (
4) Holding member (5) at 1d opposite crucible (2)
During the steaming process, the air inside the vacuum container (1) is exhausted. This apparatus has a simple structure and can provide samples with less variation in film thickness distribution. However, as shown in FIG. 1, when the exhaust port (6) and the air supply boat (7) are provided at the bottom of the vacuum vessel (1), as shown in FIG. When exhausting the gas inside the vacuum container (1), dust adheres to the sample (4) in the airflow as shown by the arrow.
逆に、給気ボート（７）よシ気体を給気して真空容器（
１）内を真空から大気圧に戻す場合でも、第３図矢印で
示すような気流になシ、真空容器（１）内に付着堆積し
ていた塵埃を舞い上げ浮遊させるため、その塵埃が試料
に付着して清浄な薄膜が得られないという問題がある。Conversely, the air supply boat (7) supplies gas to the vacuum vessel (
1) Even when returning the interior from vacuum to atmospheric pressure, the airflow as shown by the arrow in Figure 3 will lift up the dust that had accumulated inside the vacuum container (1) and make it float. There is a problem that a clean thin film cannot be obtained due to adhesion to the surface.
発明の目的
本発明は上記従来の欠点を解消するもので、真空容器内
を給排気する＠ＶＣ，Ｗ蒸着部材に形成された薄膜に塵
埃が付着するのを防止することを目的とする。OBJECTS OF THE INVENTION The present invention solves the above-mentioned conventional drawbacks, and aims to prevent dust from adhering to the thin film formed on the @VC, W vapor deposition member that supplies and exhausts the inside of the vacuum container.
発明の構成
上記目的を達成するため、本発明は、給排気ボートを有
する真空容器内の下部に族７Ｗ源を配置すると共に、真
空容器内上部位置において、被蒸着部材を支持する支持
体を前記真空容器に係脱自在に保持し、前記被蒸着部材
及びその周縁部支持体の各下面を覆う下カバーを設ける
と共にこのＦカバーの下端開口部を蒸着源近傍上方に位
置させ、前記被蒸着部材及びその周縁部支持体の各上面
を覆う上カバーを設けると共にこの上カバーの適所に給
気孔を形成し、前記支持体周縁部に、上下カバー内を連
通させる通気孔を形成し、別記上カバーの給気孔に清浄
気体を供給する給気手段を設け、且つ前記真空容器内金
給排気する時、前記給気手段によシ上丁カバー内に供給
された気体の圧力を、上下カバー外の気体の圧力よりも
高くする制御手段を設けた蒸着装置で、かかる構成によ
ると、被蒸着部材の上下部を上下カバーで覆うと共にそ
の給排気時においては、カバー外の気体圧力より高い圧
力を有する気体を、カバー内に供給するので、真空容器
内の塵埃がカバー内に侵入するのを防止でき、従って被
蒸着部材に形成される薄膜は清浄なものとなる。また、
被蒸着部材を支持する支持体は真空容器に対して係脱自
在にされているため、上下カバーを取付けたまま出し入
れができ、従って出し入れ時に、おいても塵埃の付着を
防止することができる。Structure of the Invention In order to achieve the above object, the present invention disposes a group 7W source at the lower part of a vacuum vessel having an air supply/exhaust boat, and at the same time disposes a support for supporting a member to be evaporated at an upper position in the vacuum vessel. A lower cover is provided which is detachably held in the vacuum container and covers the lower surfaces of the member to be deposited and its peripheral edge support, and the lower end opening of this F cover is located above near the evaporation source. An upper cover is provided to cover each upper surface of the peripheral edge support, and an air supply hole is formed at an appropriate position in the upper cover, and a ventilation hole is formed in the peripheral edge of the support body to communicate the inside of the upper and lower covers, and a separate upper cover is provided. An air supply means is provided for supplying clean gas to the air supply hole of the vacuum chamber, and when supplying and exhausting the inside of the vacuum container, the pressure of the gas supplied inside the top cover by the air supply means is transferred to the outside of the upper and lower covers. A vapor deposition apparatus that is equipped with a control means that makes the pressure higher than the gas pressure. According to this configuration, the upper and lower parts of the member to be vapor-deposited are covered with upper and lower covers, and the pressure is higher than the gas pressure outside the cover when supplying and discharging the material. Since the gas is supplied into the cover, dust in the vacuum container can be prevented from entering the cover, and therefore the thin film formed on the member to be evaporated becomes clean. Also,
Since the support for supporting the member to be vapor-deposited is detachable from the vacuum container, it can be taken in and taken out with the upper and lower covers attached, and therefore dust can be prevented from adhering to the vacuum container even when it is put in and taken out.
実施例の説明
以下、本発明の一実施例を図面に従って説明する。第４
図〜第６図は本発明の蒸着装置の断面図を示し、また第
７図及び第８図は真空容器内及びカバー内の給排気時の
圧力変化を示す。第４図〜第６図において、■は真空容
器で、その上壁Ｑｌａ）には給気ボート面が、また底壁
（ｌｌｂ）には排気ボート−が形成されている。１１４
１は真空容器０内の底壁（ｌｌｂ）主中央に配置された
蒸着源で、蒸着源本体（至）の中央上部には薄膜形成材
料αＧが充填されたるつぼ面が固定されている。−は前
記るつぼ面の上方位置において被蒸着部材（以下、単に
試料と称す）（至）を支持する支持体で、真空容器σＢ
の土壁（ｔｔａ）から垂下された複数本の支柱−に固定
された保持板■υ上に、取外し可能に載置されている。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. Fourth
6 to 6 show cross-sectional views of the vapor deposition apparatus of the present invention, and FIGS. 7 and 8 show pressure changes in the vacuum container and the cover during supply and exhaust. In FIGS. 4 to 6, symbol (2) is a vacuum vessel, and its upper wall (Qla) is formed with an air supply boat surface, and its bottom wall (llb) is formed with an exhaust boat. 114
Reference numeral 1 denotes an evaporation source disposed at the main center of the bottom wall (llb) in the vacuum vessel 0, and a crucible surface filled with a thin film forming material αG is fixed at the upper center of the evaporation source main body (toward). - is a support that supports the member to be evaporated (hereinafter simply referred to as sample) at a position above the crucible surface, and the vacuum vessel σB
It is removably mounted on a retaining plate υ fixed to a plurality of pillars suspended from an earthen wall (tta).
即ち、試＠住９は支持体（至）の中央に形成された開口
部（１８ａ）周囲の段部（１８ｂ）に載置されている。That is, the test box 9 is placed on the stepped portion (18b) around the opening (18a) formed in the center of the support.
に）は前記試料α・及び支持体（至）の開口周縁部（１
８０）の各下面を覆うように支持体（至）に取付けられ
た逆円錐台形状の下カバーで、その下端開口部（２２ａ
）は、るつぼαη近傍上方に位置するようにされている
。) is the opening periphery (1) of the sample α and the support (to).
80) is an inverted truncated cone-shaped lower cover attached to the support (to) so as to cover each lower surface of the lower end opening (22a).
) is located near and above the crucible αη.
（イ）は前記試料■及び支持体（２）の開口周縁部（Ｉ
ＳＣ）の各上面を覆うように取付けられた上カバーで、
その上壁中央には給気孔■が形成されている。そして、
前記支持体（至）の開口周縁部（１８Ｇ）には、上カバ
ーに）内とＦカバーに）内とを連通させる値数価の通気
孔に）が形成されている。に）は上記上カバーに）の給
気孔曽から上下カバー（２）（イ）内に清浄気体を供給
する給気手段で、大気圧よりも高い圧力の清ｆｈ気体を
貯えたポンベｅｂと、一端がこのボンベ（ロ）に接続さ
れると共に他端が上カバー（４）の給気孔■直上位置に
開口された導管（４）とから構成されている。（ト）は
真空容器ｕｎ内を給排気する時、前記給気手段（ハ）に
より上下カバー＠（イ）内に供給されたｔＲ／’ｈ気体
の圧力を、上下カバー磐に）外の気体の圧力よシも高く
する制御手段で、４管（至）途中に設けられた可変流体
絞シ弁曽と、この可変流体絞）弁に）を作動させる駆動
モータ（駆動手段の一例〕（３１１とから構成されてい
る。なお、！３ｚは給排気時において、るつぼ［１ηか
ら蒸発する気体が下カバーに）内に移動するのを阻止す
るシャッターである。(A) shows the sample (1) and the opening periphery (I) of the support (2).
A top cover attached to cover each top surface of SC).
An air supply hole (■) is formed in the center of the upper wall. and,
A vent hole (with a numerical value) is formed in the opening periphery (18G) of the support body (to) to communicate the inside of the upper cover with the inside of the F cover. 2) is an air supply means for supplying clean gas into the upper and lower covers (2) (a) from the air supply holes in the upper cover), and includes a pump eb storing clean fh gas at a pressure higher than atmospheric pressure; It consists of a conduit (4) which has one end connected to the cylinder (b) and the other end of which is opened at a position directly above the air supply hole (2) of the upper cover (4). (g) When supplying and exhausting the inside of the vacuum container un, the pressure of tR/'h gas supplied into the upper and lower covers @ (a) by the air supply means (c) is applied to the upper and lower covers @ (a) to the gas outside). A drive motor (an example of a drive means) (311 Note that !3z is a shutter that prevents the gas evaporating from 1η from moving into the crucible (to the lower cover) during air supply and exhaust.
次に、給排気動作について説明する。Next, the supply/exhaust operation will be explained.
まず、真空゛容器０内の気体を排出する場合、給気手段
（至）によ）清浄気体を上カバー−内に供給する。この
時、供給される清浄気体の圧力（第７図破線で示す）は
、真空容器＋１１１内の圧力（第７図実線で示す）より
も常に高くなるように、即ち排気時間の経過と共に制御
手段−の可変流体絞り弁■が絞られて徐々に流路抵抗が
大きくなるように制御される。従って、第５図矢印にて
示すように、上カバーに）内に供給された清浄気体は、
通気孔−を通って下カバー（支）内に至シ、そしてシャ
ッターｉ３２と下カバー（イ）との隙間よ）外に向って
流出し、真空容−ａＯ内の塵埃が下カバー器内に侵入し
て試料（１９表面に形成された薄膜に付着することはな
い。First, when discharging the gas in the vacuum container 0, clean gas is supplied into the upper cover by the air supply means. At this time, the pressure of the supplied clean gas (indicated by the broken line in FIG. 7) is controlled by the control means so that it is always higher than the pressure inside the vacuum container +111 (indicated by the solid line in FIG. 7) as the evacuation time elapses. The variable fluid throttle valve (-) is throttled and controlled so that the flow path resistance gradually increases. Therefore, as shown by the arrow in Fig. 5, the clean gas supplied into the upper cover is
The dust in the vacuum chamber aO flows into the lower cover (support) through the ventilation hole and flows outward (through the gap between the shutter i32 and the lower cover (a)), and the dust in the vacuum chamber aO flows into the lower cover unit. It does not penetrate and adhere to the thin film formed on the surface of the sample (19).
また、逆に真空から大気圧に戻す給気の場合も同様に、
上カバー骨内に清浄気体を供給すると共に、その清浄気
体の圧力（第８図破線で示す）は、やはシ真空容器ｔｔ
ｎ内の圧力（第８図実線で示す）よりも常に高くなるよ
うに、即ち給気時間の経過と共に制御手段−の可変流体
絞り弁（７）の絞りが弛められて徐々に流路抵抗が小さ
くなるように制御される。従って、第６図矢印で示すよ
うに、上カバーに）内に供給された清浄気体は、通気孔
に）を辿って下カバー（４）内に至り、そしてシャッタ
ー器とドカパー（イ）との隙間より外に向って流出し、
真空容８！面内の塵埃が下方パーＣ４内に侵入して試料
ｉｌ１表面にプレ成された薄膜に付着することはない。Similarly, when supplying air from vacuum to atmospheric pressure,
In addition to supplying clean gas into the upper cover bone, the pressure of the clean gas (indicated by the broken line in Figure 8) is also controlled by the vacuum container tt.
In other words, as the air supply time elapses, the throttle of the variable fluid throttle valve (7) of the control means is loosened so that the pressure in the flow path is always higher than the pressure (shown by the solid line in Figure 8). is controlled so that it is small. Therefore, as shown by the arrow in Fig. 6, the clean gas supplied into the upper cover (a) follows the ventilation hole into the lower cover (4), and then connects the shutter device and the cover (a). It flows outward through the gap,
Vacuum capacity 8! In-plane dust does not enter the lower par C4 and adhere to the thin film pre-formed on the surface of the sample il1.
このように本実施例によれば、被蒸ｔｔｉ部材の上下ｍ
ｋ上下カバーで覆うと共にその給排気時においては、カ
バー外の気体圧力より高い圧力を有する気体を、カバー
内に供給するので、真空容器内の塵埃がカバー内に侵入
するの欠防止でき、従って被蒸着部材に形成される薄膜
は清浄なものとなる。また被蒸着部材を支持する支持体
は真空容器に対して係脱自在にされているため、上下カ
ッく−を取付けたまま出し入れができ、従って出し入れ
時においても塵埃の付着を防止することができる。In this way, according to this embodiment, the upper and lower m of the tti member to be vaporized are
k Since it is covered with upper and lower covers and gas with a higher pressure than the gas pressure outside the cover is supplied into the cover during supply and exhaust, it is possible to prevent dust from inside the vacuum container from entering the cover. The thin film formed on the member to be evaporated becomes clean. In addition, since the support that supports the member to be evaporated is detachable from the vacuum container, it can be taken in and taken out with the upper and lower cups attached, which prevents dust from adhering when taking it in and out. .
−に、１Ｒ＃気体を給気する時に、流路抵抗を時間の経
過と共に大きく又は小さくなるようにして、カバー内圧
力をカバー外圧力よりも常に一定圧力だけ高く保持した
ので、真空容器内の気流を緩やかにでき、従って真空容
器内に堆積した塵埃の舞い上がシをできるだけ防止でき
る。- When supplying 1R# gas, the flow path resistance was made to increase or decrease over time, and the pressure inside the cover was always maintained at a constant pressure higher than the pressure outside the cover, so that the pressure inside the vacuum container increased or decreased. The airflow can be made gentler, and therefore dust accumulated in the vacuum container can be prevented from flying up as much as possible.
発明の効果
以上のように本発明によれば、被蒸着部材の上下部を上
下カバーで覆うと共にその給排気時においては、カバー
外の気体圧力よシ高い圧力を有する気体を、カバー内に
供給するので、真空容器内の塵埃がカバー内に侵入する
のを防止でき、従って被蒸着部材に形成される薄膜は清
浄なものとなる。Effects of the Invention As described above, according to the present invention, the upper and lower parts of the member to be vapor-deposited are covered with upper and lower covers, and at the time of supply and exhaust, gas having a higher pressure than the gas pressure outside the cover is supplied into the cover. Therefore, dust in the vacuum container can be prevented from entering the cover, and the thin film formed on the member to be evaporated is therefore clean.
笛１Ｍ−、−笛３（支）は襟ヰ侶１を呆１、−斌１図は
断面図、第２図は排気状態を示す断面図、第３図は給気
状態を示す断面図、第４図〜第８図は本発明の一実施例
を示すもので、第４図は断面図、第５図は排気状態を示
す断面図、第６図は給気状態を示す断面図、第７図及び
第８図は排気時及び給気時におけるカバー内圧力及びカ
バー外圧力の変化を示すグラフである。
■・・・真空容器、＠・・・給気ボー）、＋１３・・・
排気ゲート、Ｃ４・・・蒸着源、面・・・るつは、面・
・・支持体、（１８Ｑ）・・・開口周縁部、０ト・被蒸
着部材、（２）・・・下カッ＜ −＋ （２２ｆＬ）・
・・開口部、＠・・・上カバー、（ハ）・・・給気孔、
（ハ）・・・通気孔、（イ）・・・給気手段、（ロ）・
・・ボンベ、（ハ）・・・４管、（４）・・・制御手段
、…・・・可変流体絞９升、Ｌ（ＩＩ・・・駆劾モータ
代理人 祿 本 義 弘
第５図
第２図Flute 1M-, -Flute 3 (branch) has collar 1, -Bin 1 is a sectional view, Fig. 2 is a sectional view showing the exhaust state, Fig. 3 is a sectional view showing the air supply state, 4 to 8 show an embodiment of the present invention. FIG. 4 is a sectional view, FIG. 5 is a sectional view showing an exhaust state, FIG. 6 is a sectional view showing an air supply state, and FIG. 7 and 8 are graphs showing changes in the pressure inside the cover and the pressure outside the cover during exhaust and air supply. ■...Vacuum container, @...Air supply bow), +13...
Exhaust gate, C4...evaporation source, surface...rutsu, surface/
...Support, (18Q)...Aperture periphery, 0t.Member to be evaporated, (2)...Lower cup<-+ (22fL).
...Opening, @...Top cover, (C)...Air supply hole,
(c)...ventilation hole, (a)...air supply means, (b)...
...Cylinder, (c)...4 pipes, (4)...Control means,...Variable fluid throttle 9 liters, L (II...Kaimoto motor agent Yoshihiro Kimoto Figure 5 Figure 2
Claims (1)
配置すると共に、真空容器内上部位置において、被蒸着
部材を支持する支持体を前記真空容器に係脱自在に保持
し、前記被蒸着部４才及びその周縁部支持体の各下面を
覆う下カバーを設けると共にこの下カバーの下端開口部
を蒸着源近傍上方に位置させ、前記被蒸着部材及びその
周縁部支持体の各上面を覆う上カバーを設けると共にこ
の上カバーの適所に給気孔を形成し、前記支持体周縁部
に、上下カバー内を連通させる通電孔を形成し、＋ｒｉ
前記上カバー〇給気孔に清浄気体を供給する給気手段を
設け、且つ前記真空ｇ器内を給排気する時、前記＃気手
段によシ上下カバー内に供給された気体の圧力を、上下
カバー外の気体の圧力よシも高くする制御手段を設けた
蒸着装置。 ２、 制御手段は給気手段途中に設けられた可斐流体絞
シ弁と、この可変流体絞シ弁を作動させて給気手段途中
の流路抵抗を変化させる駆動手段とから成り、且つ真空
容器内を排気する時に前記流路抵抗が時間経過と共に大
きくなるように制御し、更に真空容器内に給気する時に
前記流路抵抗が時間経過と共に小さくなるように制御す
るようにした特許請求の範囲第１項記載の蒸プ９装置ｉ
Ｉｆ。[Claims] 1. A deposition source is disposed at the lower part of a vacuum vessel having an air supply/exhaust boat, and a support for supporting a member to be evaporated is detachably connected to the vacuum vessel at an upper position within the vacuum vessel. A lower cover is provided to cover each lower surface of the member to be vapor deposited and its peripheral edge support, and the lower end opening of the lower cover is positioned above near the vapor deposition source to support the member to be vapor deposited and its peripheral edge. An upper cover is provided to cover each upper surface of the body, and an air supply hole is formed at a suitable position on the upper cover, and an energizing hole is formed in the peripheral edge of the support body to communicate the inside of the upper and lower covers, and +ri
An air supply means for supplying clean gas to the air supply hole of the upper cover is provided, and when supplying and exhausting the inside of the vacuum g unit, the pressure of the gas supplied to the upper and lower covers by the air means is adjusted upward and downward. A vapor deposition device equipped with a control means that increases the pressure of the gas outside the cover. 2. The control means consists of a variable fluid restriction valve provided in the middle of the air supply means, and a driving means for operating the variable fluid restriction valve to change the flow path resistance in the air supply means, and According to a patent claim, the flow path resistance is controlled to increase over time when the inside of the vacuum container is evacuated, and further controlled so that the flow path resistance is decreased over time when air is supplied into the vacuum container. Vapor pump 9 device i described in scope 1
If.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20645183A JPS6096755A (en) | 1983-11-01 | 1983-11-01 | Vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20645183A JPS6096755A (en) | 1983-11-01 | 1983-11-01 | Vapor deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6096755A true JPS6096755A (en) | 1985-05-30 |
Family
ID=16523588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20645183A Pending JPS6096755A (en) | 1983-11-01 | 1983-11-01 | Vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6096755A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5205051A (en) * | 1990-08-28 | 1993-04-27 | Materials Research Corporation | Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof |
| US5237756A (en) * | 1990-08-28 | 1993-08-24 | Materials Research Corporation | Method and apparatus for reducing particulate contamination |
| US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US5951775A (en) * | 1992-09-30 | 1999-09-14 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US6179923B1 (en) * | 1997-08-22 | 2001-01-30 | Fuji Electric Co., Ltd. | Deposition apparatus for an organic thin-film light-emitting element |
| US6475356B1 (en) | 1996-11-21 | 2002-11-05 | Applied Materials, Inc. | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
-
1983
- 1983-11-01 JP JP20645183A patent/JPS6096755A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5205051A (en) * | 1990-08-28 | 1993-04-27 | Materials Research Corporation | Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof |
| US5237756A (en) * | 1990-08-28 | 1993-08-24 | Materials Research Corporation | Method and apparatus for reducing particulate contamination |
| US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US5951775A (en) * | 1992-09-30 | 1999-09-14 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US6143086A (en) * | 1992-09-30 | 2000-11-07 | Applied Materials, Inc. | Apparatus for full wafer deposition |
| US6475356B1 (en) | 1996-11-21 | 2002-11-05 | Applied Materials, Inc. | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
| US6179923B1 (en) * | 1997-08-22 | 2001-01-30 | Fuji Electric Co., Ltd. | Deposition apparatus for an organic thin-film light-emitting element |
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