JPS609242B2 - Semiconductor laser scanning device - Google Patents

Semiconductor laser scanning device

Info

Publication number
JPS609242B2
JPS609242B2 JP52039832A JP3983277A JPS609242B2 JP S609242 B2 JPS609242 B2 JP S609242B2 JP 52039832 A JP52039832 A JP 52039832A JP 3983277 A JP3983277 A JP 3983277A JP S609242 B2 JPS609242 B2 JP S609242B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
scanning device
lens
optical system
laser scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52039832A
Other languages
Japanese (ja)
Other versions
JPS53125044A (en
Inventor
和也 松本
尚登 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP52039832A priority Critical patent/JPS609242B2/en
Publication of JPS53125044A publication Critical patent/JPS53125044A/en
Publication of JPS609242B2 publication Critical patent/JPS609242B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、半導体レーザを光源に用いた半導体レーザ走
査装置に関するもので、特に半導体レーザー自体を受光
レンズの入射瞳を回転中心として回転する事により走査
を行う、半導体レーザ走査装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser scanning device using a semiconductor laser as a light source, and in particular to a semiconductor laser scanning device that performs scanning by rotating the semiconductor laser itself around the entrance pupil of a light receiving lens. The present invention relates to a scanning device.

一般に光源に半導体レーザを用いた像走査光学系に於て
、走査を行う方法は、第1図に示される様に半導体レー
ザを外部からの信号源により変調しその出力光を受光レ
ンズを経た後走査系に入れ光ビームの走査を行い結像レ
ンズにより記録面又は表示面上に記録又は表示を行うも
のがよく知られている。
Generally, in an image scanning optical system that uses a semiconductor laser as a light source, scanning is performed by modulating the semiconductor laser with an external signal source and passing the output light through a light receiving lens, as shown in Figure 1. It is well known to use a scanning system to scan a light beam and use an imaging lens to record or display on a recording surface or a display surface.

第2図はその光学系の構成図である。FIG. 2 is a block diagram of the optical system.

即ち信号源1より出た信号により半導体レーザー2を駆
動させ光出力を変調する。半導体レーザより出た変調さ
れた光ビームはコリメータレンズ3により平行化されガ
ルバノーミラー又は回転多面鏡4により偏向され結像レ
ンズ5に入射し記録面6上に結像される。記録面6は円
筒形のドラムとなっており、ガルバノミラー4の走査と
記録面6の回転とにより二次元的情報を記録しうるもの
である。本発明はかかる像走査記録(又は表示)光学系
の簡素化コンパクト化を図ったものである。その特徴と
しては、半導体レーザ自身に振動(又は回転)運動を与
えて、ガルバノ・ミラー(又は回転多面鏡)による走査
系を省略する事ができ、そのため従来の走査光学系に於
ける受光コリメータレンズ及び結像レンズを一つにまと
める事ができ、光学系自体が極めてコンパクト化された
事にある。第3図は本発明の一実施例でaはその上面図
、a′は側面図である。
That is, the semiconductor laser 2 is driven by the signal output from the signal source 1 to modulate the optical output. A modulated light beam emitted from a semiconductor laser is collimated by a collimator lens 3, deflected by a galvano mirror or a rotating polygon mirror 4, enters an imaging lens 5, and is imaged on a recording surface 6. The recording surface 6 is a cylindrical drum, and can record two-dimensional information by scanning the galvanometer mirror 4 and rotating the recording surface 6. The present invention aims at simplifying and compacting such an image scanning recording (or displaying) optical system. Its feature is that the semiconductor laser itself is given vibrational (or rotational) motion, making it possible to omit the scanning system using a galvano mirror (or rotating polygon mirror). The optical system itself can be made extremely compact by combining the optical system and the imaging lens into one. FIG. 3 shows an embodiment of the present invention, in which a is a top view and a' is a side view.

半導体レーザ2は回転中心7を中心に振動を与えられレ
ンズ5の入射瞳へ半導体レーザからの出射光が入射する
。回転中心7はしンズ5の入射瞳面と光軸との交わった
点にあり半導体レーザの回転によりレンズ5へ入射する
光束のレンズ5によるケラレは生じない。(図b)レン
ズからの出射光は記録面6上に結像する。レンズ5は像
面湾曲をある値にコントロールされたものとなっている
。第4図はその説明図で入射瞳を回転中心とした発光源
の軌跡は半径Rの球面となり、レンズ5により結像位置
(例えばドラム面上)に於いて、平面なものに変換する
ものである。
The semiconductor laser 2 is vibrated about the rotation center 7, and the emitted light from the semiconductor laser enters the entrance pupil of the lens 5. The center of rotation 7 is located at the intersection of the entrance pupil plane of the lens 5 and the optical axis, and the rotation of the semiconductor laser prevents the light flux incident on the lens 5 from being eclipsed by the lens 5. (Figure b) The light emitted from the lens forms an image on the recording surface 6. The lens 5 has a field curvature controlled to a certain value. FIG. 4 is an explanatory diagram of this. The locus of the light source with the entrance pupil as the center of rotation becomes a spherical surface with a radius R, which is converted into a flat surface by the lens 5 at the imaging position (for example, on the drum surface). be.

この事はしンズ5について、物点の曲率半径Rと嫁面の
曲率半径R′とが一般にべッッパ−ルの関係式まま=亨
奇=P (PetZvaISum)但しNiは光学系の
indexでiは光学系のPower よりR→のとして 毒−子音;p なる関係を満たせば(三次の収差の範囲内で)目的は蓬
せられる。
This means that for Shins 5, the radius of curvature R of the object point and the radius of curvature R' of the bride surface are generally the same as Beppel's relational expression = 庨Q=P (PetZvaISum) where Ni is the index of the optical system and i If the power of the optical system is R→, then the following relationship is satisfied (within the third-order aberration): poison-consonant;p.

実際は使用する画角・性能・深度等により更に高次の収
差補正が必要である。半導体レーザ2の振動が時間に対
して等速(リニア一)であればレンズ5による象面(ド
ラム面)の結像位置がy=b・8……■ 但し を満たす様に設計すれば像面上での等速性が得られる。
In reality, even higher-order aberration correction is required depending on the angle of view, performance, depth, etc. used. If the vibration of the semiconductor laser 2 is constant velocity (linear) with respect to time, the imaging position of the image plane (drum surface) by the lens 5 will be y = b・8...■ However, if the image is designed to satisfy the following condition, the image will be Uniform velocity on the surface can be obtained.

但し■式はしンズ5の入射瞳と主点とが一致している場
合で、そうでない場合にはy=b‐ねn−1(蓋のS号
羊8S) 但し Rは結像レンズの入射瞳位置より物体までの距離
で物体の曲率半径で もある。
However, the formula ■ applies when the entrance pupil of the lens 5 and the principal point coincide, otherwise y=b-nen-1 (S number 8S on the lid) However, R is the value of the imaging lens. The distance from the entrance pupil position to the object, which is also the radius of curvature of the object.

Sは入射瞳と主点との距離 で与えられる歪曲特性をレンズに与えれば記録面上に於
けるスポットの等速走査が得られる。
If S is given to the lens a distortion characteristic given by the distance between the entrance pupil and the principal point, uniform speed scanning of the spot on the recording surface can be obtained.

第5図は回転中心7を中心に半導体レーザを複数個設け
等速回転する事により像走査を行わせしめるものである
。即ち半導体レーザ2より出た光はしンズ6によりドラ
ム等の記録面6上に結像される。半導体レーザ2は回転
中心7を中心に複数個が等間隔に置かれ順次レンズ5に
関して、記録面6と反対側に釆た時のみ信号が送りこま
れ発光する様になっている。これはモータ等に於ける整
流子を用いて電流が各素子へ行くのを仕分けする事も可
能であるがブラシ等を用いるので半導体レーザ自体電気
的なショックに弱いため次の様な方法がよい。即ち、第
5図bに示される様に、回転体の軸8上に同軸の発電器
9を持ち外部から回転を与えた時にこの発電器9により
半導体レーザ2に電力を供給する。
In FIG. 5, a plurality of semiconductor lasers are provided around a rotation center 7 and rotated at a constant speed to perform image scanning. That is, the light emitted from the semiconductor laser 2 is imaged by the lens 6 onto a recording surface 6 such as a drum. A plurality of semiconductor lasers 2 are arranged at equal intervals around a rotation center 7, and a signal is sent to them so that they emit light only when they are placed on the side opposite to the recording surface 6 with respect to the lens 5. This can be done by using a commutator in a motor etc. to separate the current going to each element, but since a brush etc. is used, the semiconductor laser itself is vulnerable to electric shock, so the following method is better. . That is, as shown in FIG. 5b, a coaxial generator 9 is provided on the shaft 8 of the rotating body, and power is supplied to the semiconductor laser 2 by the generator 9 when rotation is applied from the outside.

半導体レ−ザ2への信号の供給は電波あるいはフオト・
カプラーによりOFF LINEで与える。回転体上に
は電子回路が組み込まれており、電力の平滑化及び回転
角による信号の各素子への振り分け等を行う。第6図は
フオトカプラーを用いた例でaはその上面図bは側面図
である。
Signals are supplied to the semiconductor laser 2 using radio waves or photo signals.
Give it OFF LINE with a coupler. An electronic circuit is installed on the rotating body, and smoothes the power and distributes signals to each element according to the rotation angle. FIG. 6 shows an example using a photocoupler, in which a is a top view and b is a side view.

即ちLED(又は半導体レーザ)10より出た光をレン
ズ11、ミラー12により回転中心に置かれた受光素子
12に結像する。しかるに複数個ある半導体レーザのう
ち所定の位置にあるものだけが発光する様に構成されて
おり(これは回転角によるポテンシオ・メータ等で容易
に実現できる。)受光素子12のうけた情報が半導体レ
ーザへ入り変調される。はじめLEDI OはONのみ
の状態で情報は出されない。即ち半導体レーザ2はON
のままで光を出しながら回る。この光ビームが同期用受
光素子15を横ぎつた瞬間同期用クロツクパルスが発生
する。そのクロックパルスがカウントされ、ある所定数
に達した時制御装置14から一行分の情報がはき出され
LEDIOを点滅させ半導体レーザ2を変調する。半導
体レーザからの出力光はしンズ5により記録面上に結像
されるが、その際光線が回転体により遮壁されない様に
、半導体レーザを奇数個にして、半導体レーザと相対す
る側の面を削り落とす必要がある。
That is, light emitted from an LED (or semiconductor laser) 10 is imaged by a lens 11 and a mirror 12 onto a light receiving element 12 placed at the center of rotation. However, among the plurality of semiconductor lasers, only one at a predetermined position is configured to emit light (this can be easily achieved using a potentiometer or the like depending on the rotation angle), and the information received by the light receiving element 12 is transmitted to the semiconductor laser. Enters the laser and is modulated. Initially, LED I O is only ON and no information is output. That is, the semiconductor laser 2 is ON.
It rotates while emitting light. The moment this light beam crosses the synchronization light receiving element 15, a synchronization clock pulse is generated. The clock pulses are counted, and when a predetermined number is reached, one line of information is output from the control device 14, causing the LEDIO to blink and modulating the semiconductor laser 2. The output light from the semiconductor laser is imaged on the recording surface by the lens 5, but in order to prevent the light beam from being blocked by the rotating body, an odd number of semiconductor lasers are used, and the surface facing the semiconductor laser is need to be scraped off.

あるいはレンズよりの出射光をミラーにより光軸を折り
曲げてもよい。かかる方法により光学系が簡易化・コン
パクト化されたわけであるがその他の特徴として回転に
より半導体レーザ自体が空冷化され熱の上昇を防ぐ事が
できる事と半導体レーザを複数個用いたものでは1個の
素子が破壊した場合他の素子により代替でき(但し記録
速度が落ちるが)信頼性が向上する。
Alternatively, the optical axis of the light emitted from the lens may be bent by a mirror. Although this method has made the optical system simpler and more compact, other features include the fact that the semiconductor laser itself is air-cooled by rotation, which prevents heat from rising, and that it is possible to prevent heat from increasing by using multiple semiconductor lasers. If one element is destroyed, it can be replaced with another element (however, the recording speed will be reduced), but reliability will be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の半導体レーザ走査装置のブロック図、第
2図は第1図のブロック図に従う従来の半導体レ−ザ走
査装置の概略図、第3図は本発明の半導体レーザ走査装
置の第1実施例を示すもので、第3図aは半導体レーザ
が結像レンズの光軸上に位置している状態を示す図、第
3図a′は第3図aを側面から見た図、第3図bは半導
体レーザが回転した状態を示す図、第4図は半導体レー
ザがレンズに対して回転した際の軌跡を示す図、第5図
は本発明の第2実施例を示す図で、第5図aは上面図、
第5図bは側面図、第6図は第5図の半導体レーザ走査
装置を適用した書き込み機を示すもので、第6図aは上
面図、第6図bは側面図を示すものである。 図中、2は半導体レーザ、5は結像レンズ、6はドラム
、7は回転軸である。 第1図 第2図 労る図 第4図 第5図 第6図
FIG. 1 is a block diagram of a conventional semiconductor laser scanning device, FIG. 2 is a schematic diagram of a conventional semiconductor laser scanning device according to the block diagram of FIG. 1, and FIG. 3 is a schematic diagram of a semiconductor laser scanning device of the present invention. 3A is a diagram showing a state where the semiconductor laser is positioned on the optical axis of the imaging lens, FIG. 3A' is a side view of FIG. 3A, and FIG. Fig. 3b is a diagram showing the state in which the semiconductor laser is rotated, Fig. 4 is a diagram showing the locus of the semiconductor laser when it rotates with respect to the lens, and Fig. 5 is a diagram showing the second embodiment of the present invention. , Figure 5a is a top view,
Fig. 5b shows a side view, Fig. 6 shows a writing machine to which the semiconductor laser scanning device of Fig. 5 is applied, Fig. 6a shows a top view, and Fig. 6b shows a side view. . In the figure, 2 is a semiconductor laser, 5 is an imaging lens, 6 is a drum, and 7 is a rotating shaft. Figure 1 Figure 2 Figure 2 Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】 1 半導体レーザからの変調された出力光を結像光学系
により記録又は表示面上に結像する半導体レーザ走査装
置に於いて、前記半導体レーザはある軸の回りを中心と
して前記結像光学系に対して回転又は振動する半導体レ
ーザ支持部材に固定されており、前記結像光学系は半導
体レーザの曲面軌跡を平面状に結像する収差特性を有す
ることを特徴とする半導体レーザ走査装置。 2 前記半導体レーザの回転又は振動の中心が前記結像
光学系の入射瞳と光軸との交点近傍上にある特許請求の
範囲第1項記載の半導体レーザ走査装置。
[Scope of Claims] 1. In a semiconductor laser scanning device in which modulated output light from a semiconductor laser is recorded or imaged on a display surface by an imaging optical system, the semiconductor laser is centered around a certain axis. The semiconductor laser is fixed to a semiconductor laser support member that rotates or vibrates with respect to the imaging optical system, and the imaging optical system has an aberration characteristic that images a curved locus of the semiconductor laser into a planar shape. Laser scanning device. 2. The semiconductor laser scanning device according to claim 1, wherein the center of rotation or vibration of the semiconductor laser is located near the intersection of the entrance pupil of the imaging optical system and the optical axis.
JP52039832A 1977-04-07 1977-04-07 Semiconductor laser scanning device Expired JPS609242B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52039832A JPS609242B2 (en) 1977-04-07 1977-04-07 Semiconductor laser scanning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52039832A JPS609242B2 (en) 1977-04-07 1977-04-07 Semiconductor laser scanning device

Publications (2)

Publication Number Publication Date
JPS53125044A JPS53125044A (en) 1978-11-01
JPS609242B2 true JPS609242B2 (en) 1985-03-08

Family

ID=12563934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52039832A Expired JPS609242B2 (en) 1977-04-07 1977-04-07 Semiconductor laser scanning device

Country Status (1)

Country Link
JP (1) JPS609242B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617317A (en) * 1979-07-20 1981-02-19 Fuji Photo Film Co Ltd Light-beam scanner
JPS5681812A (en) * 1979-12-10 1981-07-04 Fuji Photo Film Co Ltd Light beam modulating and deflecting device
JPS57120911A (en) * 1981-01-19 1982-07-28 Fuji Photo Film Co Ltd Light beam modulating and deflecting device
JPS585711A (en) * 1981-07-02 1983-01-13 Mita Ind Co Ltd Light emitting and deflecting device

Also Published As

Publication number Publication date
JPS53125044A (en) 1978-11-01

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